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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 300KRAD 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD 3000KRAD(Si) • Gamma Dot - Survives , 1000KRAD(S¡) with neutron hardness ranging from 1 E13n/cm2 for 500V product to 1 E14n/crrr for 100V , Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be sampled for both VGS = ... | OCR Scan |
6 pages, |
VDMOS reliability testing report TO-205A AN-8831 pj 939 diode FRL9130D FRL9130R FRL9130H -100V 100KRAD FRL9130D abstract |
| Abstract: 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD 3000KRAD(Si) • Gamma Dot - Survives 3E9RAD(Si)/sec at 80% , résistance as low as 25mÃX Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(S¡) with neutron , = 1000KRAD(Si). Neutron = 3E12 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V ... | OCR Scan |
6 pages, |
FRF450D FRF450R FRF450H 100KRAD FRF450D abstract |
| Abstract: 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD 3000KRAD(Si) • Gamma Dot - Survives 3E9RAD(Si)/sec at 80% , résistance as low as 25mÃX Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(S¡) with neutron , = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V ... | OCR Scan |
6 pages, |
100V 60A N CHANNEL MOSFET FRF150D FRF150R FRF150H 100KRAD FRF150D abstract |
| Abstract: End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD 3000KRAD(Si , , and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with , "R". Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma bias must be sampled for ... | Original |
7 pages, |
2N7274R 2N7274H 2N7274D 2E12 1E14 FRM230 FRM230 abstract |
| Abstract: Pre-Rad Specifications to 100KRAD 100KRAD(Si) Defined End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD(Si , 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n , "D", 100KRAD 100KRAD(Si) for "R". Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma ... | Original |
4 pages, |
2N7271R 2N7271H 2N7271D 2E12 FRM130 FRM130 abstract |
| Abstract: Specifications to 100KRAD 100KRAD(Si) Defined End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD(Si) Performance Permits , (Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for , "D", 100KRAD 100KRAD(Si) for "R". Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma ... | Original |
5 pages, |
2N7277R 2N7277H 2N7277D 2E12 1E14 FRM234 FRM234 abstract |
| Abstract: Pre-Rad Specifications to 100KRAD 100KRAD(Si) Defined End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD(Si , 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n , (Si) for "R". Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be ... | Original |
5 pages, |
2N7322R 2N7322H 2N7322D 2E12 FRK9150 FRK9150 abstract |
| Abstract: Pre-Rad Specifications to 100KRAD 100KRAD(Si) Defined End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD(Si , 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n , (Si) for "R". Neutron = 3E13 5. Gamma = 1000KRAD(Si). Neutron = 3E13 6. Insitu Gamma bias must be ... | Original |
4 pages, |
2N7328R 2N7328H 2N7328D 2E12 FRK9160 FRK9160 abstract |
| Abstract: Pre-Rad Specifications to 100KRAD 100KRAD(Si) Defined End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD(Si , 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n , "R". Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma bias must be sampled for ... | Original |
4 pages, |
2N7303H 2N7303D 2E12 1E14 2N7303R FRK264 FRK264 abstract |
| Abstract: Specifications to 100KRAD 100KRAD(Si) Defined End Point Specs at 300KRAD 300KRAD(Si) and 1000KRAD(Si) Performance Permits , (Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for , "D", 100KRAD 100KRAD(Si) for "R". Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma ... | Original |
4 pages, |
FRL234 2N7278R 2N7278H 2N7278D 2E12 1E14 FRL234 abstract |
| Abstract: mt PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada.CA 90638 Phone: (714) 670-SSDI 670-SSDI (7734) Fax: (714) 522-7424 Designer's Data Sheet FEATURES: â- Hermetically Sealed, Isolated Package â- Ceramic Seals â- Available with formed leads â- TX, TXV and S Level â- Replaces: IRFM7450/8450 IRFM7450/8450, FRF450 FRF450 R/H â- Second Generation Radiation Hardened Mosfet results from new design concepts. â- Gamma: A)Meets pre-rad specifications to 100 KRad(Si) B)Defined end-point specs at 300 an ... | OCR Scan |
3 pages, |
SFFR450M SFFD450M frf450 3E12 2E12 670-SSDI 670-SSDI abstract |
| Abstract: Semiconductor June 1998 FRF9150D FRF9150D, FRF9150R FRF9150R, FRF9150H FRF9150H 23 A, -100V -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs Features • 23A, -100V -100V, rDS(ON) = 0.140£2 • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-RAD Spécifications to 100K RAD (Si) - Detined End Point Specs at 300K RAD (Si) and 1000K 1000K RAD (Si) - Performance Permits Limited Use to 3000K 3000K RAD (Si) • Gamma Dot - Survives 3e9 RAD (Si)/s at 80% BVqss Typically - Survives 2E12 Typically If Current Limited to ... | OCR Scan |
6 pages, |
S 170 TRANSISTOR FRF9150D FRF9150R FRF9150H -100V FRF9150D abstract |
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| RAD HARD process samples are irradiated and tested at 0, 100, 300, 600 and 1000Krad (Si). Finally www.datasheetarchive.com/files/international-rectifier/docs/wcd00009/wcd009a3.htm |
International Rectifier | 06/10/1998 | 6.89 Kb | HTM | wcd009a3.htm |
| , 100, 300, 1000 140 rads (Si)/sec Negligible degradation to 1000 krads CLC404 CLC404 CLC404 CLC404 specification; should www.datasheetarchive.com/files/national/htm/nsc00813-v4.htm |
National | 16/09/1998 | 11.69 Kb | HTM | nsc00813-v4.htm |