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Part Manufacturer Description Datasheet BUY
LTC1992-10HMS8#TR Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1992-1HMS8 Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1992-2CMS8#TR Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1992-5CMS8 Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1992-5IMS8#TR Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1992IMS8 Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

1.5um cmos process family

Catalog Datasheet MFG & Type PDF Document Tags

TOKO Catalogue

Abstract: mt8870 ic CWF1201 CWF1501 CWF2001 CWF2501 CWF3001 CWF4001 CWF5001 CWF9001 CWF9910 CWF9940 0.8um Analog CMOS 1.2um CMOS Process Family 1.5um CMOS Process Family 2 um CMOS Process Family 2.5um CCD Process 3.0um CMOS Process Family 4.0um CMOS Process Family 5.0um CMOS Process Family 9.0um Metal Gate CMOS Process One Time , Synthesizer Audio Processor System Controller and Data Modem Mitel Bipolar HG Process Mitel Bipolar HJ Process Mitel Bipolar Technology Suite Mitel Bipolar WPC Process Mitel Bromont Process Selection Guide Quality
Mitel Semiconductor
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TOKO Catalogue mt8870 ic 1.5um cmos process family sl1461sa an5183 AN4883 1A184A 140MH 250MH 1A191 1A192 1A194

1.2 Micron CMOS Process Family

Abstract: CMOS Process Family 1.5 Micron CMOS Process Family ® June 1995 Features Process Parameters · Double , = 1.5µm 11-13 1.5 Micron CMOS Process Family Capacitances (fF/µm2) Resistances (/sq , · 2.7~3.6 Volts Low Voltage Option · 1.5µm Process Parameters 5volts & 3volts , Description The 1.5µm process provides flexibility, speed and packing density needed in mixed signal designs , for improved dynamic range. A process module can be integrated to provide high precision and very low
Mitel Semiconductor
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1.2 Micron CMOS Process Family CMOS Process Family 5-Micron-CMOS-Process 0.6 um cmos process

CMOS Process Family

Abstract: 1.5um cmos process family 1.5 Micron CMOS Process Family ® February 1996 Features Technology Outline · · , 380 ps @5.0V P 6.3/1.5 N 2.3/1.5 12-13 1.5 Micron CMOS Process Family Capacitances (fF/µm2 , Reliability against Moisture Latchup Free Process on Non-Epi Material Achieved with Optimized I/OProtection · · · Process Parameters 1.5µm Units Metal I pitch (width/space) 1.5 / 1.5 µm , 270 Å Inter poly oxide thick. 480 Å Process Parameters Description The 1.5µm
Mitel Semiconductor
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datasheet VMOS Transistor

Abstract: 1.2 Micron CMOS Process Family 1.5 Micron CMOS Process Family Features · LOVMOS Processes (2.7~3.6 Volts Low Voltage Option) · , 98 1.5 Micron CMOS Process Family (cont'd) Resistances ( /sq.) Capacitances (fF/µm2) 1.5 µm , Process parameters 1.5µm Units Metal I pitch (width/space) 1.5 / 1.5 µm Metal II pitch , 1.5 x 1.5 µm Via 1.8 x 1.8 µm Gate geometry 1.5 µm The 1.5µm process provides , for Reliability against Moisture · Latchup Free Process on Non-Epi Material Achieved with Optimized I
Zarlink Semiconductor
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datasheet VMOS Transistor
Abstract: 1.5 Micron CMOS Process Family Features · LOVMOS Processes (2.7~3.6 Volts Low Voltage Option) · , in Canada © Mitel FTI-15-01-Rev 11 April 98 1.5 Micron CMOS Process Family (cont'd , Process parameters 1.5µm Units Metal I pitch (width/space) Metal II pitch (width/space) Poly pitch , process provides the flexibility, speed and packing density needed in mixed signal designs. The aggressive , · Latchup Free Process on Non-Epi Material Achieved with Optimized I/O Protection MOSFET Mitel Semiconductor
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micron resistor

Abstract: CMOS Process Family 2 Micron CMOS Process Family ® February 1996 Features · · · · · · · · · Process Parameters Double Poly / Double Metal 4 µm Poly and Metal I Pitch 320 ps Delay per stage , = 2µm 12-15 2 Micron CMOS Process Family Capacitances (fF/µm2) Resistances (/sq.) 2 µm , 1.5µm Process Low TCR Resistor Module ProToDuctionTM Option for fast prototypes Standard Cell Library Process Parameters 2µm 5volts & 3volts Units Metal I pitch (width/space) 2/2 µm Metal
Mitel Semiconductor
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micron resistor

CMOS Process Family

Abstract: 2 Micron CMOS Process Family Features · Double Poly / Double Metal · 4 µm Poly and Metal 1 Pitch · 320 ps Delay per stage (Ring Osc.) Process parameters Process Parameters · 5.5 Volts , Process Family (cont'd) Capacitances (fF/µm2) Resistances (¾ /sq.) 2 µm 5 volts & 3 volts 2 µm 5 , 1.5µm Process (5 volts & 3volts) Metal I pitch (width / space) 2/2 µm · ProToDuctionTM , P+ junction depth 0.28 µm The 2µm P-Well process provides flexibility, speed and packing
DALSA Semiconductor
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CMOS Process Family

Abstract: P-MOSFET transistor 2 Micron CMOS Process Family ® June 1995 Process Parameters Features · Double Poly , L drawn = 2µm 11-15 2 Micron CMOS Process Family Capacitances (fF/µm2) Resistances (/sq , 1.5µm Process · Low TCR Resistor Module · ProToDuctionTM Option for fast prototypes · Standard Cells Library Process Parameters 2µm 5volts & 3volts Units Metal I pitch (width/space , thickness 325 Å Inter poly oxide thick. 500 Å Via Description The 2µm P-Well process
Mitel Semiconductor
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P-MOSFET transistor P-MOSFET process of mosfet

CMOS Process Family

Abstract: P-MOSFET 2 Micron CMOS Process Family Features · Double Poly / Double Metal · 4 µm Poly and Metal 1 Pitch · 320 ps Delay per stage (Ring Osc.) Process parameters Process Parameters · 5.5 Volts , 518000 Printed in Canada © Mitel FTI-20-01-Rev.8 April 1998 2 Micron CMOS Process Family (cont'd , 1.5µm Process (5 volts & 3volts) Metal I pitch (width / space) 2/2 µm · ProToDuctionTM , P+ junction depth 0.28 µm The 2µm P-Well process provides flexibility, speed and packing
Zarlink Semiconductor
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mosfet 4800

JESD22-A102

Abstract: DO-160G JESD22-A108 SS/Process Family/Quarter 45 Table 5 ­ Package/Assembly Monitor Reliability Test , Results by Process Technology 4.0um CMOS 1.5um CMOS 0.8um CMOS 0.6um CMOS-SOI(C) 0.35um CMOS(C) Number of , . Reliability Qualification Program The qualifications of new wafer process, packages, and devices are designed , and process/product improvements. Manufacturing Quality is estimated by measuring early life failure , . This sample method identifies defects introduced at the test process step or that have escaped the test
HOLT Integrated Circuits
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44PTQS 64PTQS JESD22-A102 DO-160G DPM 659 11Q2 QR-1222 92691T 32PTQS 52PTQS
Abstract: 2 Micron CMOS Process Family Features · Double Poly / Double Metal · 4 µm Poly and Metal 1 Pitch · 320 ps Delay per stage (Ring Osc.) Process parameters Process Parameters · 5.5 Volts , 518000 Printed in Canada © Mitel FTI-20-01-Rev.8 April 1998 2 Micron CMOS Process Family (cont'd , 1.5µm Process (5 volts & 3volts) Metal I pitch (width / space) 2/2 µm · ProToDuctionTM , P+ junction depth 0.28 µm The 2µm P-Well process provides flexibility, speed and packing Mitel Semiconductor
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1.2 micron cmos

Abstract: 1.2 Micron CMOS Process Family 1.2 Micron CMOS Process Family ® February 1996 Features · · · · · · Process , 12-11 1.2 Micron CMOS Process Family Capacitances (fF/µm2) min. Resistances (/sq.) typ , Twin-tub process ProToDuctionTM Option for prototypes Standard Cell Library 1.2µm 5volts Units , Gate oxide thickness 225 Å Inter poly oxide thick. 390 Å Process Parameters Description The 1.2µm process provides flexibility, speed and packing density needed in mixed signal designs
Mitel Semiconductor
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1.2 micron cmos 12-micron

1.2 Micron CMOS Process Family

Abstract: 1.2 micron cmos 1.2 Micron CMOS Process Family ® June 1995 Features Process Parameters · Double , ) Bvdss min. 0.85 Ids=20nA 11-11 1.2 Micron CMOS Process Family Capacitances (fF/µm2 , thickness 225 Å Inter poly oxide thick. 390 Å Process Parameters Description The 1.2µm process provides flexibility, speed and packing density needed in mixed signal designs. The aggressive design rules on both metal layers are comparable to most 0.8µm processes. A process module can be
Mitel Semiconductor
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0.03 um CMOS technology metal resistor metal oxide in capacitor 0.8 Micron CMOS Process Family vertical PNP

68hc26

Abstract: 68HC05C4 used to qualify a process/product/ package family). Once the process driver device is identified, the , specific family. This process average measurement is made by understanding the reliability and quality , associated with all process/package family types. With all of this data, an effective ongoing monitoring , detailed plan to control all processes for a family of products. The Process FMEA is equally important in , describe the basic CMOS process (using both p-channel and n-channel MOSFET transistors) for a given shrink
Motorola
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68hc26 68HC05C4 68hc705p9 JPC3400 68HC05B6 68HC05C12

68hc11pa8

Abstract: 68hc11kg4 / product / package family). Once the process driver device is identified, the appropriate stress test programs are put in place to adequately monitor the ongoing process average of the specific family. This , Control Plan, which is a detailed plan to control all processes for a family of products. The Process , describe the basic CMOS process (using both p-channel and n-channel MOSFET transistors) for a given shrink , analog process. CMOS AND HMOS PROCESSES These processes are used for older generation devices. No new
Motorola
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68hc11pa8 68hc11kg4 68B09E 68HC11PH8 HC711KG4 68HC57 MRQSY96/D

Aeroflex UTMC

Abstract: 8252 production. As a result of the wafer foundry and process change (1.5µm to 0.35µm CMOS), differences in AC , December 2, 2002 Dear Customer: Aeroflex UTMC Microelectronic Systems Inc. (UTMC) appreciates your interest and use of our products, specifically the RadHard Family of PROMs. The purpose of this letter is to inform you that UTMC is proceeding with migrating the 256K RadHard PROM, both 3 and 5 volt versions (Standard Microcircuit Drawings 5962-96891 and 5962-01517), to a new wafer fabrication facility
Aeroflex UTMC
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Aeroflex UTMC 8252 UTMC UTMC Microelectronic Systems 5962-01517 ESTIMATE FABRICATION

7 pin dips smps power control ic

Abstract: jfet folded cascode , Micrel extended its process and foundry capabilities to include a full complement of Bipolar, CMOS , MPD8020 CMOS/DMOS Semicustom High-Voltage Array uses Micrel's proprietary process which combines TTL/CMOS , your strictest standard of excellence. Micrel's unique process technologies have allowed us to produce , analog and logic CMOS, customized high-voltage PMOS, and high-voltage DMOS power drivers on a single IC , (NASDAQ: MCRL). Building on strengths in process technology and testing, Micrel has expanded and
Micrel Semiconductor
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7 pin dips smps power control ic jfet folded cascode foundry INCOMING MATERIAL INSPECTION procedure bilateral zener diode marking Use High-Voltage Op Amps to Drive Power MOSFETs, micrel 1993

UTMC Microelectronic Systems

Abstract: 1000 "direct replacement" August 1, 2002 Dear Customer: Aeroflex UTMC Microelectronic Systems Inc. (UTMC) appreciates your interest and use of our products, specifically the RadHard Family of PROMs. The purpose of this letter is to inform you that UTMC is migrating the 256K RadHard PROM, both 3 and 5 volt versions , products currently in QML Q and V production. As a result of the wafer foundry and process change (1.5µm to 0.35µm CMOS), differences in AC electrical performance were unavoidable. UTMC will keep you
Aeroflex UTMC
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1000 "direct replacement" 5962-96891 JORDAN

1.2 Micron CMOS Process Family

Abstract: FTI-12 1.2 Micron CMOS Process Family Process parameters 1.2µm 5volts Metal I or II pitch (width/space , -12-01-Rev.8 20 April 1998 1.2 Micron CMOS Process Family [cont'd] Resistances ( /sq.) Capacitances (fF , thickness The 1.2µm process provides flexibility, speed and packing density needed in mixed signal , , · 2.4 µm Poly and Metal I Pitch, · 5.5 Volts Maximum Operating Voltage, · Twin-tub process on , available, · . Low leakage process · Standard cell library available 1.2 / 1.2 Metal III pitch
Zarlink Semiconductor
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FTI-12 4800 mosfet

1.2 Micron CMOS Process Family

Abstract: 1.2 Micron CMOS Process Family Process parameters 1.2µm 5volts Metal I or II pitch (width/space , 518000 Printed in Canada © Mitel FTI-12-01-Rev.8 20 April 1998 1.2 Micron CMOS Process Family , Volts Maximum Operating Voltage, · Twin-tub process on P-type or N-type wafers, · ProToDuctionTM Option for low cost prototypes, · Triple Metal option available, · Low leakage process . · Standard cell , thickness Inter poly oxide thickness Description The 1.2µm process provides flexibility, speed and
Mitel Semiconductor
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