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HSP45116AVC-52 Intersil Corporation Numerically Controlled Oscillator/Modulator; MQFP160; Temp Range: 0° to 70° visit Intersil Buy
HSP45116AVC-52Z Intersil Corporation Numerically Controlled Oscillator/Modulator; MQFP160; Temp Range: 0° to 70° visit Intersil Buy

1-16A

Catalog Datasheet MFG & Type PDF Document Tags

116a

Abstract: ¸' à¸' à¸' à¸' à¸' à¸' POUT at 1 dB COMPR. (dBm) 1.15à¸' 1.15à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 0.96à¸' 0.96à¸' 0.96à
Mini-Circuits
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ELM14468AA

Abstract: 116a ®¹ï¼Œ ä½å·¥ä½ç"uå', ·Vds=30V ä½å¯¼é'šç"u阻çš"大ç"uæu MOSFETã'' ·Id=11.6A (Vgs , ®¡æ­£å'å'é™ Vgs=10V Rds(on) Id=11.6A Gfs Vsd 2.0 3.0 Vgs=4.5V, Id=10A Vds=5V, Id=11.6A Is , ˜» å¼'å³ç‰¹æ'§ nA A 11.0 Ta=125â"ƒ μA Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V, Id=11.6A pF , Qrr If=11.6A, dlf/dt=100A/μs If=11.6A, dlf/dt=100A/μs 备注: 1ï¼ Î¸ å'¼æ˜¯å¨ Ta , =4.5V 15 7 1.4 15 10 Vgs=10V 5 5 10 15 4.5 220 140 Vgs=10V Id=11.6A Vgs
ELM Technology
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116a

Abstract: ) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mâ"¦ (VGS = 10V) RDS(ON) < 22mâ"¦ (VGS = 4.5V) SRFET , VGS=4.5V, ID=9.3A Forward Transconductance VDS=5V, ID=11.6A VSD Diode Forward Voltage IS , Rg mA 0.1 VGS=10V, ID=11.6A RDS(ON) 10 pF 1.7 2.6 â"¦ SWITCHING , VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11.6A Qgs Gate Source Charge Qgd Gate Drain , trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=300A/Âus
Alpha & Omega Semiconductor
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Abstract: ) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mâ"¦ (VGS = 10V) RDS(ON) < 22mâ"¦ (VGS = 4.5V) SRFET , VGS=4.5V, ID=9.3A Forward Transconductance VDS=5V, ID=11.6A VSD Diode Forward Voltage IS , 0.43 903 VGS=0V, VDS=15V, f=1MHz Reverse Transfer Capacitance Rg mA 0.1 VGS=10V, ID=11.6A , =0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11.6A Qgs Gate Source Charge Qgd Gate Drain Charge , Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=300A/Âus Body Diode Alpha & Omega Semiconductor
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Abstract: '¢ â'¢ â'¢ â'¢ Vds=30V Id=11.6A (Vgs=10V) Rds(on) < 14mΩ (Vgs=10V) Rds(on) < 22mΩ (Vgs , ) Vds=Vgs, Id=10mA Id(on) Vgs=4.5V, Vds=5V Vgs=10V Rds(on) Id=11.6A Tj=125°C Vgs=4.5V, Id=10A Gfs Vds=5V, Id=11.6A Vsd Is=1A, Vgs=0V Coss Crss Rg SWITCHING PARAMETERS Total gate charge (10V) Total , pF pF Ω 17.0 Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V, Id=11.6A , 4.7 nC nC If=11.6A, dl/dt=100A/μs If=11.6A, dl/dt=100A/μs 5.0 6.0 19.0 6.5 7.5 ELM Technology
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AO4468L

Abstract: 116a . AO4468 and AO4468L are electrically identical. VDS (V) = 30V ID = 11.6A RDS(ON) < 14mâ"¦ RDS(ON , ±100 3 30 VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=11.6A Diode Forward Voltage IS , =10V, VDS=5V VGS=10V, ID=11.6A 1.4 50 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11.6A VGS=10V, VDS=15V, RL=1.30â"¦, RGEN=3â"¦ IF=11.6A, dI/dt=100A/Âus IF=11.6A , =10V ID=11.6A VGS=4.5V ID=10A 1.2 1 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current
Alpha & Omega Semiconductor
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116a

AO4722

Abstract: (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14m (VGS = 10V , 2.5 V 11.5 14 17 21 VGS=4.5V, ID=9.3A 17.5 22 VDS=5V, ID=11.6A 28 VGS=10V, ID=11.6A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD , VGS=10V, VDS=15V, ID=11.6A Turn-Off Fall Time pF 2.0 nC Gate Drain Charge 3.9 nC , =3 IF=11.6A, dI/dt=300A/us trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse
Alpha & Omega Semiconductor
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AO4722
Abstract: ¸' 1.16à¸' 1.16à¸' 1.15à¸' 1.15à¸' 1.15à¸' 1.15à¸' 1.15à¸' 1.15à¸' 1.14à¸' 1.03 1.03 1.03 , ¸' 67.05à¸' 65.89à¸' 64.48à¸' 63.58à¸' 1.35à¸' 1.41à¸' 1.85à¸' 1.97à¸' 2.32à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.17à¸' 1.18à¸' 1.14à¸' 1.15à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.03 1.03 1.04 1.05 1.06 , ¸' 1.17à¸' 1.16à¸' 1.16à¸' 1.15à¸' 1.15à¸' 1.14à¸' 1.13à¸' 1.07 1.08 1.09 1.12 1.13 à , ¸' 60.54à¸' 61.08à¸' 2.10à¸' 1.78à¸' 0.70à¸' 1.60à¸' 1.47à¸' 1.16à¸' 1.15à¸' 1.14à¸' 1.13à Mini-Circuits
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KSWHA-1-20
Abstract: ¸' 2.10à¸' 1.78à¸' 0.70à¸' 1.60à¸' 1.47à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.15à¸' 1.15à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.17à¸' 1.18à¸' 1.18à¸' 1.18à¸' 1.18à¸' 1.17à¸' 1.16à¸' 1.16à¸' 1.15à¸' 1.14à , OFF â'" x 1.15à¸' 1.15à¸' 1.15à¸' 1.15à¸' 1.14à¸' 1.14à¸' 1.15à¸' 1.15à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.15à¸' 1.15à¸' 1.14à¸' 1.13à¸' 1.12à¸' 1.10à¸' 1.07à¸' 1.06à¸' 1.05à¸' 1.03 1.03 Mini-Circuits
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ZFSWHA-1-20

BASIC step 1

Abstract: Weinschel ATTENUATION RANGE: Model 115A: 0 to 9 dB in 1 dB steps Model 116A: 0 to 60 dB in 10 dB steps Model 117A , ) 117A & 119A 115A, 116A & 118A 1.35 1.50 1.70 1.25 1.60 1.60 dc - 4 4 - 12.4 12.4 - , 0.7 1.0 116A N SMA 0.3 0.4 0.7 1.0 117A N SMA 0.5 0.6 1.2 1.5 118A , : Single Drum: 115A, 116A, 118A Dual Drum: 117A, 119A VIBRATION (non-operating): 5 to 8 cps, 0.20 inch , 1 SMA, Female 2 SMA, Male 3 Type N, Female 4 Type N, Male WEIGHT: 115A 340 g (12 oz) 116A
Aeroflex / Weinschel
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BASIC step 1 Weinschel AC116A
Abstract: Operating Area â'¢ Lower RDS(on ): 0-21Q (Typ.) , R d S(ON) = 0.28£2 lD = 11.6A ABSOLUTE , VDD=100V, ID=11.6A RG=50£2 See Fig 13 ©© Fall Time - 55 120 Total Gate Charge , ) Charge - 8.1 - V q3=160V, Vgs=1 0V Id=11.6A See Fig 6 & Fig 12 © © R DS(on) 9fs ^d , =25°C, ls=11.6A, VGS=0V Reverse Resovery Time - 130 - ns Reverse Resovery Charge - 0.63 - (J.C Tj=25°C, lF=11.6A, Vdd=1 60V diF/dt=100A/(j,s © Q rr Notes:  -
OCR Scan
FQP12N20
Abstract: . AO4468 and AO4468L are electrically identical. VDS (V) = 30V ID = 11.6A RDS(ON) < 14mâ"¦ RDS(ON , ±100 3 30 VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=11.6A Diode Forward Voltage IS , =5V VGS=10V, ID=11.6A 1.5 50 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11.6A VGS=10V, VDS=15V, RL=1.30â"¦, RGEN=3â"¦ IF=11.6A, dI/dt=100A/Âus IF=11.6A, dI , °C1.8 VGS=4.5V 15 10 VGS=10V 1.6 15 7 1.4 220 140 VGS=10V ID=11.6A VGS=4.5V ID Alpha & Omega Semiconductor
Original
Abstract: . AO4468 and AO4468L are electrically identical. VDS (V) = 30V ID = 11.6A RDS(ON) < 14mâ"¦ RDS(ON , VDS=VGS ID=250ÂuA 1 1.7 VGS=4.5V, VDS=5V 50 VGS=10V, ID=11.6A 3 14 21 VGS=4.5V, ID=10A 17.4 22 VDS=5V, ID=11.6A 19 Forward Transconductance VSD IS=1A,VGS=0V Diode Forward , =10V, VDS=15V, ID=11.6A 0.85 â"¦ 17 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V , ns IF=11.6A, dI/dt=100A/Âus 19 21 Body Diode Reverse Recovery Charge IF=11.6A, dI/dt Alpha & Omega Semiconductor
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AO4468

Abstract: AO4468L . AO4468 and AO4468L are electrically identical. VDS (V) = 30V ID = 11.6A RDS(ON) < 14m RDS(ON , =0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=11.6A DYNAMIC , Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime tf VGS=10V, VDS=15V, ID=11.6A , Crss nA 2 11 TJ=125°C Static Drain-Source On-Resistance uA ±100 VGS=10V, ID=11.6A , Recovery Time IF=11.6A, dI/dt=100A/us 19 21 Qrr Body Diode Reverse Recovery Charge IF=11.6A
Alpha & Omega Semiconductor
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AO4468 AOS
Abstract: AO4468 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 11.6A RDS(ON) < 14mâ , VGS=4.5V, ID=10A 17.4 gFS Forward Transconductance VDS=5V, ID=11.6A 19 VSD Diode , 112 156 pF â"¦ 0.5 0.85 17 VGS=10V, VDS=15V, ID=11.6A 0.3 V 955 VGS , =10V, ID=11.6A IS Units 24 nC 9 12 nC Qgs Gate Source Charge Qgd Gate , IF=11.6A, dI/dt=100A/Âus 19 21 Qrr Body Diode Reverse Recovery Charge IF=11.6A, dI/dt Alpha & Omega Semiconductor
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Weinschel AE

Abstract: ) * dc to 16.0 GHz for TNC connectors STANDARD RANGE: Model Model Model Model Model 115A 116A 117A , 21703-7362* TEL: (301) 831-4701, 800- 638-2048 · FAX: 301-831-4570 Models 115A, 116A, 117A, 118A, & 119A , 1.5 1.8 2.1 2.3 2.5 SPECIFICATIONS (Con't) MAXIMUM INSERTION LOSS: Model Number 115A 116A 117A , SWR (Models 115A, 116A, and 118A): Frequency Range (GHz) dc - 4 dc - 8 d c- 12. 4 dc-18 SMA, N, GPC-7 1.20 1.25 1.40 1.50 TNC 1.30 1.35 1.50 1.60 116A CALIBRATION: Insertion Loss data is supplied as
-
OCR Scan
Weinschel AE MIL-C-39012 IEEE-STD-287 AE119A-99 4-40UNC

3361a

Abstract: ¸' 1.88à¸' 2.02à¸' 2.19à¸' 2.39à¸' 1.39à¸' 1.37à¸' 1.34à¸' 1.30à¸' 1.26à¸' 1.16à¸' 1.16à , ¸' 2.86à¸' 2.95à¸' 3.02à¸' 3.12à¸' 3.17à¸' 1.16à¸' 1.15à¸' 1.14à¸' 1.12à¸' 1.11à¸' 1.12à¸' 1.12à¸' 1.12à¸' 1.12à¸' 1.11à¸' 1.17à¸' 1.16à¸' 1.16à¸' 1.17à¸' 1.16à¸' 1.18à¸' 1.18à
Mini-Circuits
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3361a ZX10-4A-14 2002/95/EC GY1065 ZX10-4A-14-S M127604 ED-11601/2

Weinschel AE

Abstract: RANGE: Model 115A: 0 to 9 dB in 1 dB steps Model 116A: 0 to 60 dB in 10 dB steps Model 117A: 0 to 69 dB , 1.55 1.70 MAXIMUM SWR (Models 115A, 116A, & 118A): Frequency Range (GHz) dc - 4 dc - 12.4 dc - 18 , ): Model Number 115A 116A 117A 118A 119A CONN Type N/GPC7 SMA/TNC N/GPC7 SMA/TNC N/GPC7 SMA/TNC N/GPC7 SMA , ,000 ft. SHOCK (non-operating): 8 g's, 100 ms, 1/2 sine DRUM CONFIGURATIONS: Single Drum: 115A, 116A , , Male 5 GPC 7 6 TNC, Female 7 TNC, Male 120 116A 118A *dc to 16.0 GHz for TNC connector
Weinschel
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IL-C-39012

2188A

Abstract: ¸' 1.18à¸' 1.17à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.16à¸' 1.17à¸' 1.18à¸' 1.20à¸' 1.21à¸' 1.23à
Mini-Circuits
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2188A XX211 M131858 ED-12593/1
Abstract: ¸' 1.42à¸' 1.15à¸' 1.27à¸' 1.13à¸' 1.08à¸' 1.16à¸' 1.08à¸' 1.10à¸' 1.04à¸' 1.09à¸' 1.15à , ¸' 0.73à¸' 1.16à¸' 1.20à¸' 1.12à¸' 1.44à¸' 1.37à¸' 1.20à¸' 1.10à¸' 1.11à¸' 1.14à¸' 1.21à¸' 1.16à¸' 1.07à¸' 1.13à¸' 1.14à¸' 1.16à¸' 1.15à¸' 1.07à¸' 1.12à¸' 1.13à¸' 1.20à¸' 1.09à , ¸' 1.40à¸' 1.20à¸' 1.08à¸' 1.41à¸' 1.45à¸' 1.25à¸' 1.39à¸' 1.24à¸' 1.16à¸' 1.21à¸' 1.10à¸' 1.14à¸' 1.13à¸' 1.24à¸' 1.21à¸' 1.10à¸' 1.16à¸' 1.19à¸' 1.36à¸' 1.15à¸' 1.15à¸' 1.07à Mini-Circuits
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ZN4PD1-50 UU846 ZN4PD1-50-S ED-9551/1
Abstract: User's Manual 32 R32C/116A Group Userâ'™s Manual: Hardware R32C/116A Group Userâ'™s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these , relative chapters or sections of this manual. The R32C/116A Group includes the documents listed below , Contents Document Name Document Number Datasheet Overview of Hardware and Electrical R32C/116A , characteristics Refer to the Application Manual for peripheral usage. R32C/116A Group Userâ'™s Manual Renesas Electronics
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R32C/116A R01UH0213EJ0110 REJ09B0575-0100

R5F6416MADFE

Abstract: p125s R32C/116A Group Shortsheet PRELIMINARY R32C/116A Group RENESAS MCU REJ03B0297-0050 Rev , minimize external components. The R32C/100 Series, in particular, provides the R32C/116A Group as a , Preliminary Specification This is a preliminary specification and is subject to change. R32C/116A Group , of the R32C/116A Group. Table 1.1 Unit CPU R32C/116A Group Performance for the 176 pin-Package (1/2 , a preliminary specification and is subject to change. R32C/116A Group 1. Overview Table 1.2
Renesas Technology
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R5F6416MADFE p125s R5F6416LADFE
Abstract: 32 User's Manual R32C/116A Group User's Manual: Hardware R32C/116A Group User's Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials , sections of this manual. The R32C/116A Group includes the documents listed below. Verify this manual is the , and Electrical R32C/116A Group Characteristics Datasheet Specifications and detailed descriptions of , Application Manual for peripheral usage. Descriptions of instruction set R32C/116A Group User's Manual Renesas Electronics
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Abstract: R32C/116A Group Datasheet Datasheet R32C/116A Group RENESAS MCU 1. REJ03B0297-0100 Rev , enables to minimize external components. The R32C/100 Series, in particular, provides the R32C/116A , , communication/portable devices, etc. REJ03B0297-0100 Jul 16, 2010 Rev.1.00 Page 1 of 99 R32C/116A , overview of the R32C/116A Group. Table 1.1 R32C/116A Group Performance for the 176 pin-Package (1/2 , /116A Group Table 1.2 1. Overview R32C/116A Group Performance for the 176-pin Package (2/2 Renesas Electronics
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REJ03B029

AN7166

Abstract: 0000EE R32C/116A Group Datasheet Datasheet R32C/116A Group RENESAS MCU 1. REJ03B0297-0100 Rev , enables to minimize external components. The R32C/100 Series, in particular, provides the R32C/116A , , communication/portable devices, etc. REJ03B0297-0100 Jul 16, 2010 Rev.1.00 Page 1 of 99 R32C/116A , overview of the R32C/116A Group. Table 1.1 R32C/116A Group Performance for the 176 pin-Package (1/2 , -0100 Jul 16, 2010 Rev.1.00 Page 2 of 99 R32C/116A Group Table 1.2 1. Overview R32C/116A
Renesas Electronics
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AN7166 0000EE PLQP0144KA-A R5F6416MA REJ03B0297

R5F6416MADFE

Abstract: R32C/116A Group Datasheet Datasheet R32C/116A Group RENESAS MCU R01DS0066EJ0110 Rev.1.10 Sep 24 , enables to minimize external components. The R32C/100 Series, in particular, provides the R32C/116A Group , , communication/portable devices, etc. R01DS0066EJ0110 Rev.1.10 Sep 24, 2012 Page 1 of 99 R32C/116A , of the R32C/116A Group. Table 1.1 Unit CPU Performance Overview for the 176 pin-Package (1/2 , . R01DS0066EJ0110 Rev.1.10 Sep 24, 2012 Page 2 of 99 R32C/116A Group 1. Overview Table 1.2 Unit Timer
Renesas Electronics
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12N50C3

Abstract: SPI12N50C3 limited by Tjmax2) ID=11.6A, VDD=50V Rev. 3.0 Page 1 -55.+150 15 W °C V/ns , )DS VGS=0V, ID=11.6A typ. max. 500 - - - 600 - 2.1 3 3.9 V , time tr ID=11.6A, R G=6.8 - 8 - Turn-off delay time td(off) - 45 - , total Qg VDD=400V, ID=11.6A VDD=400V, ID=11.6A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=400V, ID=11.6A V 1Limited only by maximum temperature 2Repetitve avalanche
Infineon Technologies
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SPP12N50C3 SPI12N50C3 SPA12N50C3 PG-TO220-3-31 12N50C3 Q67040-S4578 TRANSISTOR 12N50C3 SMD TRANSISTOR MARKING code TC PG-TO262- PG-TO220

fqb*12n20l

Abstract: FQB12N20L converters, switch mode power supply, motor control. · · · · · · · 11.6A, 200V, RDS(on) = 0.28 , . Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.3mH, IAS = 11.6A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 11.6A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C 4. Pulse
Fairchild Semiconductor
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FQB12N20L FQI12N20L fqb*12n20l
Abstract: KSM12N20L 200V LOGIC N-Channel MOSFET TO-220 Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ 11.6A, 200V, RDS(on) = 0.28â"¦ @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers General Description These N-Channel enhancement mode power , 11.6A, VDD = 50V, RG = 25 â"¦, Starting TJ = 25°C 3. ISD ≤ 11.6A, di/dt ≤ 300A/Âus, VDD ≤ BVDSS KERSEMI
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95MAX 54TYP

FDMS86201

Abstract: Operating Area â'¢ Lower RDS(on ): 0-21Q (Typ.) , R d S(ON) = 0.28£2 lD = 11.6A ABSOLUTE , VDD=100V, ID=11.6A RG=50£2 See Fig 13 ©© Fall Time - 55 120 Total Gate Charge , ) Charge - 8.1 - V q3=160V, Vgs=1 0V Id=11.6A See Fig 6 & Fig 12 © © R DS(on) 9fs ^d , =25°C, ls=11.6A, VGS=0V Reverse Resovery Time - 130 - ns Reverse Resovery Charge - 0.63 - (J.C Tj=25°C, lF=11.6A, Vdd=1 60V diF/dt=100A/(j,s © Q rr Notes: Â
Fairchild Semiconductor
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FDMS86201
Abstract: FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10m Features General Description r DS(ON) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the , Resistance V GS = VDS, ID = 250uA 1.2 - 2.5 ID = 11.6A, VGS = 10V rDS(ON) Gate to Source Threshold Voltage - 0.0079 0.010 ID = 10.7A, VGS = 4.5V - 0.0096 0.012 ID = 11.6A , FDS8880 Rev. A1 VDD = 15V ID = 11.6A Ig = 1.0mA - - VDS = 15V, VGS = 0V, f = 1MHz 4.2 Fairchild Semiconductor
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fds8880

Abstract: FDS8880_NL (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14m (VGS = 10V , 2.5 V 11.5 14 17 21 VGS=4.5V, ID=9.3A 17.5 22 VDS=5V, ID=11.6A 28 VGS=10V, ID=11.6A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD , VGS=10V, VDS=15V, ID=11.6A Turn-Off Fall Time pF 2.0 nC Gate Drain Charge 3.9 nC , =3 IF=11.6A, dI/dt=300A/us trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse
Fairchild Semiconductor
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FDS8880_NL
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