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Part Manufacturer Description Datasheet BUY
TMX320C80GF60 Texas Instruments Multimedia Video Processor 305-CPGA visit Texas Instruments
TMS320C80GF Texas Instruments Multimedia Video Processor 305-CPGA visit Texas Instruments
5962-9679101QXA Texas Instruments Digital Signal Processor 305-CPGA -55 to 125 visit Texas Instruments
SMJ320C80GFM50 Texas Instruments Digital Signal Processor 305-CPGA -55 to 125 visit Texas Instruments
TMS320C80GF50 Texas Instruments 64-BIT, 100MHz, OTHER DSP, CPGA305, CERAMIC, PGA-305 visit Texas Instruments
SM320C80GFA50 Texas Instruments Digital Signal Processors 305-CPGA -40 to 85 visit Texas Instruments

1/transistor 305

Catalog Datasheet MFG & Type PDF Document Tags

transistor w2a

Abstract: w2a transistor Opaque: 0.8 x 2 mm min. (See Note 1.) OFF ON OFF ON Transistor on output stage with , EE-SPX302/402/304/404/305/405/306/406-W2A Prewired Compact Sensing Head for Easy Mounting in , EE-SPX306-W2A Light-ON EE-SPX406-W2A EE-SPX302/402/304/404/305/405/306/406-W2A EE-SPX302/402/304/404/305/405/306/406-W2A Specifications RATINGS Model EE-SPX302-W2A EE-SPX304-W2A Supply , mA max. Standard reference object Opaque: 0.5 x 1 mm min. Differential distance 0.05 mm
OMRON
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transistor w2a w2a transistor temperature controller circuit diagram with relay 306 transistor infrared detecting object transistor 304 EE-SPX402-W2A EE-SPX404-W2A EE-SPX305-W2A EE-SPX405-W2A 1-800-55-OMRON

w2a transistor

Abstract: 306 transistor EE-SPX405-W2A EE-SPX406-W2A Opaque: 0.8 x 2 mm min. (See Note 1.) OFF ON OFF ON Transistor on , EE-SPX302/402/304/404/305/405/306/406-W2A Prewired Compact Sensing Head for Easy Mounting in , ) i ) EE-SPX302-W2A Light-ON 3.6 mm 6.6 mm EE-SPX402-W2A 1 6.6 mm Dark-ON , mm EE-SPX304-W2A Light-ON 5 mm Dark-ON EE-SPX406-W2A EE-SPX302/402/304/404/305/405/306/406-W2A EE-SPX302/402/304/404/305/405/306/406-W2A Specifications J RATINGS Model
OMRON
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AWG22

diodo silicio

Abstract: diodo zener 5v % NPN a transistor con · No. ingressi: 1 (ingresso sensore) · Campo tensione ingresso: da 1 a 5V DC , ) NPN a transistor con · Campo tensione ingresso: da 1 a 5V DC collettore aperto · Alimentazione , dotazione con LA-305) Dimensioni di montaggio 1 1 2 2 12 18 12 10 6 3 2-M30.5 3 , Ricevitore: L20H20L35mm Stability indicators Indicatori stabilità Tipo sottile / LA-305 Emettitore , Oggetto opaco "0.1mm LA-310 300mm 5mm Oggetto opaco "0.05mm LA-305 Codice Uscita
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diodo silicio diodo zener 5v TRANSISTOR SUPERFICIE diodi zener DIODO LED 5mm diodo 87 LA-300 LA-510 L20H20L45 L20H20L35 LA-305 L18H40L10

TRANSISTOR 404

Abstract: transistor 304 EE-SPX302/402/304/404/305/405-W2A Cable length: 1 m long cable (attached) GaAs infrared LED (pulse-m , omRon_ EE-SPX302/402/304/404/305/405-W2A Prewired Compact Sensing Head for Easy , Weight Approx. 18.5 g (including lead wires) 1 r T RATINGS Model 3.6 mm Dark-ON Light-ON , reference object Differential distance Control output Output configuration Transistor on output stage without detecting object Transistor on output stage with detecting object 5 to 24 VDC ±10%, ripple (p-p
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TRANSISTOR 404 EE-SPX302/402/304/404/305/405-W2A EE-SPX302-W EE-SPX402-W EE-SPX304-W EE-SPX404-W EE-SPX305-W

TRANSISTOR PHL 405

Abstract: PHL 505 transistor °F) Item Symbol EE-SX301/401/ 305/405/ 384/484 EE-SX493 EE-SX398/498 EE-SX3070/4070 , level output voltage VOH 15 V min. VCC = 16 V RL = 1 k 15 V min. VCC = 16 V RL = 1 k 15 V min. VCC = 16 V RL = 1 k 15 V min. VCC = 16 V RL = 1 k Current , EE-SX301/401/ 305/405/384/484 VCC = 5 to 16 V IF = 15 mA IOL = 16 mA LED current when output is , tPLH EE-SX493 EE-SX3/SX4 EE-SX3/SX4 Engineering Data Note: 1. The operating conditions of
OMRON
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EE-SX398 EE-SX301 EE-SX305 EE-SX498 EE-SX401 EE-SX405 TRANSISTOR PHL 405 PHL 505 transistor 3402 transistor EE-SX4070

EE-SX398

Abstract: EE-SX301 °F) Item Symbol EE-SX301/401/ 305/405/ 384/484 EE-SX493 EE-SX398/498 EE-SX3070/4070 , level output voltage VOH 15 V min. VCC = 16 V RL = 1 k 15 V min. VCC = 16 V RL = 1 k 15 V min. VCC = 16 V RL = 1 k 15 V min. VCC = 16 V RL = 1 k Current , EE-SX301/401/ 305/405/384/484 VCC = 5 to 16 V IF = 15 mA IOL = 16 mA LED current when output is , tPLH EE-SX493 EE-SX3/SX4 EE-SX3/SX4 Engineering Data Note: 1. The operating conditions of
OMRON
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EE-SX384 EE-SX3070 EE-SX484 EE-SX305/405 EE-SX384/484
Abstract: open-collector transistor (Comparative outputs) Analog voltage â'¢ Output voltage: 1 to 5 V LA-A1 , transistor (Comparative outputs) Analog voltage â'¢ Output voltage: 1 to 5 V LA-A1P HL-T1 LA , ± 10 % â'¢ Output: NPN open-collector transistor â'¢ No. of inputs: 1 No. (sensor input) â'¢ Input , © + â'" *1 (Gray) Analog output (+) Non-voltage contact or NPN open-collector transistor , head mounting bracket for LA-305 MS-LA3-2 (Accessory) (Note) MS-LA3-1 (Accessory) Note: When SUNX
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LA-310

Abstract: shock sensor amplifier input 12v · Input range: 1 to 5V DC transistor · Power supply for sensor: 12V DC, 150mA NPN open-collector , -2 (Accessory) (Note) MS-LA3-1 (Accessory) Note: When carring out high accuracy sensing with LA-305, install , -310 Target label Emitter: W20H20D45mm Receiver: W20H20D35mm Stability indicators Slim type / LA-305 , & Shift Adjustment In addition to 1 to 5V analog output, two comparative outputs (HIGH, LOW , LA-305 Model No. Output Slim 500mm Outer Diameter Measurement Minimum sensing
SUNX
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shock sensor amplifier input 12v la-a1p violet DC-12 DC-13 EN50081-2 W20H20D45 W20H20D35 W18H40D10
Abstract: needed [FX-305] 1 sensor is enough! Largest number in the industry! Automatic interference , output FX-305P FX-305 Thru-beam type (FT-B8): 1,700 (U-LG), 1,100 (LONG), 730 (STDF) 530 (STD , ) Output (Output 1, Output 2) NPN open-collector transistor â'¢ Maximum sink current: each 50 mA , less [at each 50 mA (Note 1) sink current] PNP open-collector transistor â'¢ Maximum source , zener diode Tr1, Tr2: NPN output transistor 4-digit red LED display FX-305P Sensor circuit 1 SUNX
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FX-305 PCE-FX305

NPN transistor 310

Abstract: transistor 305 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor , Value Units VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 , Document number: BL/SSSTF057 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor MMSTA42 ELECTRICAL CHARACTERISTICS @ Ta=25 unless , =0 305 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off
BL Galaxy Electrical
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NPN transistor 310 transistor 305 NPN Silicon Epitaxial Planar Transistor PC035 3000/T

sunx fx 300

Abstract: FX-300 -301P Standard Type Red LED 12-24VDC PNP Light-ON/DarkAutomatic ON 1 FX-305 High Function , in) FX-301 FX-305 Amplifier 8.3 Operation indicator (Note 1)(Orange) 0.327 48.2 26.3 , width DIN rail 36.5 1.437 Notes: 1) FX-305; Output 1 operation indicator (Orange) 2) FX-305 , PNP open-collector transistor 2 outputs · Maximum source current: 50 mA each (Note 1) · Applied , open-collector transistor 2 outputs · Maximum sink current: 50 mA each (Note 1) · Applied voltage: 30 V DC or
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FX-300 FX305 FX-301-HS CN-73-C1 CN-71-C1 sunx fx 300 CN-73 SUNX FX-300 CN-73-C2 CN-73-C5

schematic diagram RPM meter

Abstract: Tachometer circuit transistor are included on chip for signal condition ing as required. Driver outputs are self-centering and devel op ±4.5V swing at 20 mA. Better than 2% linearity is guar anteed over a full 305-degree operating , FIGURE 1. Automotive Tachometer Application. Circuit shown operates with 4 cylinder engine and deflects , availability and specifications. Supply Voltage, V+ (pin 13) 20V Power Dissipation (note 1) 1300 mW Operating Temperature Storage Temperature Lead Temp (So|dering 10 seconds) BVceo -4 0 °C to + 8 5 °C -6 5 °C to -1 5 0
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LM1819 LM1819N X463UW schematic diagram RPM meter Tachometer circuit automotive distributorless Ignition Optical tachometer TL/H/5263-1 LM1819M RN60D

AT-42000

Abstract: low noise amplifier ghz Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features · , at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz · Low , Description Hewlett-Packard's AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be , transistor with impedances that are easy to match for low noise and medium power applications. This
Hewlett-Packard
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low noise amplifier ghz AT-42000-GP4 S21E 42000GP4 RN/50

LB1823

Abstract: SLA6023 application TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 13097HA(OT)/83095HA(OT) No , 30 mA Pd max 1 W Operating temperature Topr ­20 to +80 °C Storage temperature Tstg ­55 to +150 °C Ratings Unit 1 to 5 mA Allowable Operating Ranges at , [Hall Amplifier] Input bias current Common-mode input voltage range IHB ­4 VICM ­1 1.5 , ] VIO (FG) ­10 +10 mV IB (FG) ­1 +1 A Output high level voltage VOH (FG
SANYO Electric
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EN4263B LB1823 SLA6023 application Brushless Motor Speed Control lb1823 SLA6022 sanken LB1822 SLA6022 lb1823 3196-DIP30SD DIP30SD

8909E

Abstract: AT-42000 AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Description Features Avago's AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with , the VHF, UHF, and microwave frequencies. An optimum noise match near 50W up to 1 GHz , makes this
Avago Technologies
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AV02-1002EN 8909E AT42000-GP4 5965-8909E

LB1823

Abstract: SLA6022 lb1823 transistor base with a 63 k pull-up resistor to VCC Threshold level: About 2.6 V (high to low), about 3.05 V , TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 13097HA(OT)/83095HA(OT) No , outputs 30 mA Pd max 1 W Operating temperature Topr ­20 to +80 °C Storage temperature Tstg ­55 to +150 °C Ratings Unit 1 to 5 mA Allowable Operating Ranges at , 16 mV Input voltage high to low VSHL ­16 mV ­1 µA 4.4 V mVp-p 32 60
SANYO Electric
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Sanken Electric TRANSISTOR 2SC3985 2SD330 SLA6022 2Sc2314
Abstract: transistor as shown in the figure to apply an external clock signal (CLK) to the Xtal pin. ^CLK = 1 to 10.2 , SAN YO Electric Co.,Ltd. Sem iconductor Bussiness Headquarters T O K Y O OFFICE Tokyo Bldg. M O . 1 Chôme. Ueno. Ta.tc-ki., TO KY O . 1 1C JAPAN 7 c tì707b D01754D 4fl0 ì 13097HA(OTV83095HA(OT , â o 1 Pdm ax Allowable power dissipation W Operating temperature Topr -2 0 to +80 Storage temperature Tstg -5 5 to +150 â'¢c â'¢c Ratings Unit 1 to 5 mA Allowable -
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D017550

8909E

Abstract: AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features · , at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz · Low , Description Agilent's AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with
Agilent Technologies
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nytronics wee wee 150

Abstract: 2N5918 C .004 .010 11 25 3 ¿D 305 .320 7.48 8.12 _ .110 .130 2.80 3.30 1 E 275 .300 6.99 7.62 - G 590 , .470 10.80 11 93 _ Ni - .078 - 1 98 i n2 .110 .150 2.80 3.81 _ Q .120 .170 3.05 4.31 _ Ol .025 .045 , Silicon N-P-N Emitter-Ballasted Overlay Transistor For VHF/UHF Communications Equipment Features â  10 , * EMITTER-TO-BASE VOLTAGE . . . VEB0 4 V * CONTINUOUS COLLECTOR CURRENT lC 0.75 A * TRANSISTOR DISSIPATION , transistor employing "overlay" emitter-electrode construction. This device features emitter-ballasting
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2N5918 nytronics wee wee 150 rca 448 rca 632 10W Power Amplifier rca rf overlay transistor 400-MH 92CS-I7207 225/400-MH 8-32UNC-2A

SLA6023 application

Abstract: LB1823M Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 13097HA , °C Storage temperature Tstg ­55 to +150 °C Ratings Unit 1 to 5 mA , low to high VSLH 16 mV Input voltage high to low VSHL ­16 mV ­1 A 4.4 V , [FG Amplifier] Input offset voltage VIO (FG) ­10 +10 mV IB (FG) ­1 +1 A , current 1 Gain: 100 × FG input sensitivity 5.3 Schmitt amplitude for the next stage V
SANYO Electric
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LB1823M EN4696B MFP30SD
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