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1/transistor 305

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Abstract: MSC1090M MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG(B) A .100 X 45° The ASI MSC1090M MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. ØD 1 3 C B .088 x 45° CHAMFER 4 2 E F FEATURES , System I J K DIM 1.050 / 26.67 C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E , PDISS 290 W @ TC = 25 °C J .120 / 3.05 .130 / 3.30 TJ -65 °C to +200 °C TSTG -65 ... Original
datasheet

1 pages,
25.06 Kb

transistor k 790 MSC1090M 1402 Transistor MSC1090M abstract
datasheet frame
Abstract: AVF150 AVF150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG (B) DESCRIPTION: A .100 X 45° The ASI AVF150 AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications , Matching Networks · PG = 8.2 dB at 150 W/1150 MHz · OmnigoldTM Metalization System · 30:1 load VSWR , B MAXIMUM RATINGS MINIMUM 1.050 / 26.67 MAXIMUM .120 / 3.05 .140 / 3.56 11 A , +200 °C .052 / 1.32 .007 / 0.18 .120 / 3.05 .130 / 3.30 -65 °C to +250 °C TSTG I ... Original
datasheet

1 pages,
14 Kb

TACAN AVF150 ASI10570 1402 Transistor AVF150 abstract
datasheet frame
Abstract: EE-SPX302/402/304/404/305/405-W2A Cable length: 1 m long cable (attached) GaAs infrared LED (pulse-m , omRon_ EE-SPX302/402/304/404/305/405-W2A Prewired Compact Sensing Head for Easy , Weight Approx. 18.5 g (including lead wires) 1 r T RATINGS Model 3.6 mm Dark-ON Light-ON , reference object Differential distance Control output Output configuration Transistor on output stage without detecting object Transistor on output stage with detecting object 5 to 24 VDC ±10%, ripple (p-p ... OCR Scan
datasheet

4 pages,
140 Kb

transistor 304 EE-SPX302/402/304/404/305/405-W2A EE-SPX302/402/304/404/305/405-W2A abstract
datasheet frame
Abstract: Short-circuit-proof Cul-Weight: 8g Trafo-Weight:43g 1 5 10 6 20 ± 0,5 32,5 11,5 ±0,3 15,3 ± 0,3 ±0,3 AnsichtaufStiftseite-Pinview Abmessungen-Dimensioninmm BestellNr. OrderNo. 30.5/11031* 30.5/11032* 30.5/11033* 30.5/11034* 30.5/11006* 30.5/11035* 30.5/11036* 30.5/11037* 30.5/21031* 30.5/21032* 30.5/21033* 30.5/21034* 30.5/11004* 30.5/21035* 30.5/21036* 30.5/21037* Primär , /6+7-9+10 1+5/6+7-9+10 Leerlaufspannung V No-LoadVoltageca. 9,7 14,1 20,5 24,6 28,4 2x10,1 2x12 ... Original
datasheet

1 pages,
64.57 Kb

enec en61558 EI30 marschner 30.5/11031 21036 UL1585 Marschner UL-1585 EI30/5 EI30/5 abstract
datasheet frame
Abstract: AVD035F AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG (B) The ASI AVD035F AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN , / 26.67 MAXIMUM C VCB 55 V PDISS 100 W .140 / 3.56 E 3.0 A PEAK .120 / 3.05 , .120 / 3.05 .130 / 3.30 .210 / 5.33 K TJ -65 °C to +200 °C TSTG -65 °C to +150 °C , notice. mA -dB % REV. C 1/1 ... Original
datasheet

1 pages,
14.01 Kb

TACAN AVD035F ASI10558 ic 245 AVD035F abstract
datasheet frame
Abstract: THA92TTD03 THA92TTD03 TRANSISTOR C WBFBP-03A WBFBP-03A DESCRIPTION PNP Epitaxial Silicon Transistor (1.6�6�5) unit: mm FEATURES Power dissipation PCM : 0.15 W (Tamb=25) TOP B C 1. BASE APPLICATION High , V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC , -100A -100A, IE=0 -310 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -305 , -0.25 Emitter cut-off current IEBO VEB= -5V, IC=0 hFE(1) VCE= -10V, IC= -1mA 60 hFE ... Original
datasheet

2 pages,
193.31 Kb

2D TRANSISTOR marking 2D WBFBP-03A THA92TTD03 WBFBP-03A abstract
datasheet frame
Abstract: THA42TTD03 THA42TTD03 TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A WBFBP-03A (1.6�6�5) unit , 1. BASE 2. EMITTER 3. COLLECTOR BACK MARKING:1D C E B 1D B E MAXIMUM RATINGS , 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V , 305 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector , 100 VCE=10V, IC=30mA A A A A 60 hFE(3) DC current gain IEBO hFE(1) Emitter ... Original
datasheet

3 pages,
134.69 Kb

THA42TTD03 1D TRANSISTOR WBFBP-03A WBFBP-03A abstract
datasheet frame
Abstract: MSC81035M MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE , 1.050 / 26.67 MAXIMUM C .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F , 100 °C TJ .130 / 3.30 -65 °C to +150 °C JC .072 / 1.83 .120 / 3.05 -65 °C to +250 , change without notice. mA -dB % REV. C 1/1 ... Original
datasheet

1 pages,
14.06 Kb

TACAN 41 TACAN MSC81035M MSC81035M abstract
datasheet frame
Abstract: Tc = 25 °C TJ -55 °C to+100 °C Tstg -55 °C to+100 °C 0JC 15 °C/W PACKAGE STYLE TO-5 009 125 1 .335 .370""" 1. 305 - n.335 I : .260 .240 » .022 1 ™t- f 1.50 MIN. .028 I , 2N2468 2N2468 GERMANIUM PNP POWER TRANSISTOR DESCRIPTION: The 2N2468 2N2468 is a Medium Power Transistor for , mA lc = 500 mA 20 20 100 - VcE(SAT) lc = 1 0 A lB = 0.1 A -0.4 V VßE(SAT) lc = 1 0 A lB = 0.1 A , Electronic-Library Service CopyRight 2003 REV.A 1/1 ... OCR Scan
datasheet

1 pages,
24.31 Kb

germanium pnp transistor 2N2468 transistor 335 2N2468 abstract
datasheet frame
Abstract: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor , Value Units VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 , Document number: BL/SSSTF057 BL/SSSTF057 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor MMSTA42 MMSTA42 ELECTRICAL CHARACTERISTICS @ Ta=25 unless , 305 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off ... Original
datasheet

4 pages,
256.6 Kb

NPN Silicon Epitaxial Planar Transistor MMSTA42 NPN transistor 310 transistor 305 datasheet abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
dB and relatively immune to input mismatch; 1 V operation] AT-32063 AT-32063 AT-32063 AT-32063 dual transistor as cascode LNA AT-320 AT-320 AT-320 AT-320 , AT-310 AT-310 AT-310 AT-310 , AT-305 , HBFP-0420 HBFP-0420 HBFP-0420 HBFP-0420 , HBFP-0405 HBFP-0405 HBFP-0405 HBFP-0405 . Pager Down Converter top downconverts input signal to IF [1 V operation] AT-305 , AT-310 AT-310 AT-310 AT-310 , AT-320 AT-320 AT-320 AT-320 [1 V operation] AT-320 AT-320 AT-320 AT-320 , AT-310 AT-310 AT-310 AT-310 , AT-305 , HBFP-0420 HBFP-0420 HBFP-0420 HBFP-0420 , HBFP-0405 HBFP-0405 HBFP-0405 HBFP-0405 as CE gain stage. Pager Oscilator top provides signal for downconversion to IF [1 V operation] AT-305
www.datasheetarchive.com/files/agilent/hprfhelp/markets/pagers/pager.htm
Agilent 23/11/1999 12.91 Kb HTM pager.htm
16.7 49.2 20.9 30.5 1N6150A 1N6150A 1N6150A 1N6150A SA TVS G STD 1500 16.7 49.2 20.9 30.5 LCE17 LCE17 LCE17 LCE17 SD TVS CASE-1 STD 1500 17 49 = 30.5 Volts Part No Type Package Ppp (Watts) Vwm (Volts) JANS 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD 500 16.7 16.4 20.9 30.5 JANS 1N6114AUS 1N6114AUS 1N6114AUS 1N6114AUS SA TVS E SQ. MELF SM 500 16.7 16.4 20.9 30.5 JANTX 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD 500 16.7 16.4 20.9 30.5 JANTX 1N6114AUS 1N6114AUS 1N6114AUS 1N6114AUS SA TVS E SQ. MELF SM 500 16.7 16.4 20.9 30.5 JAN 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD 500 16.7 16.4 20.9 30.5 JAN 1N6114AUS 1N6114AUS 1N6114AUS 1N6114AUS SA TVS E SQ.
www.datasheetarchive.com/files/microsemi/products/tvs/122_30.5.htm
Microsemi 04/01/1999 22.85 Kb HTM 122_30.5.htm
Transistor Q67000-S078 Q67000-S078 Q67000-S078 Q67000-S078 Transistor Q67000-S076 Q67000-S076 Q67000-S076 Q67000-S076 Small-Signal Transistor Q67000-S4010 Q67000-S4010 Q67000-S4010 Q67000-S4010 Transistor Q67041-S4021 Q67041-S4021 Q67041-S4021 Q67041-S4021 Transistor Q67000-S4012 Q67000-S4012 Q67000-S4012 Q67000-S4012
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1794.htm
Infineon 26/10/2000 154.38 Kb HTM pro~1794.htm
Transistor Specification Selection Guide Maximum Collector Current (BJT Size \/ 10 AT-310 AT-310 AT-310 AT-310 \/ AT-305 transistor. A higher rating equates to a higher output power capability; a lower rating indicates lower power at 1 dB gain compression, or "linear power capability") is directly related to I max . this page last updated: 1 October 1999
www.datasheetarchive.com/files/agilent/hprfhelp/products/xrs/sp_im_m.htm
Agilent 23/11/1999 27.48 Kb HTM sp_im_m.htm
; gold-metallization ensures excellent reliability. The transistor has a 1/2 in 6-lead flange envelope with a as of 2000-01-10 Latest information online BLV25 BLV25 BLV25 BLV25; VHF power transistor Description N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast VHF power transistor 01-Aug-86 Product Specification 11 83 Open package device status buy online BLV25 BLV25 BLV25 BLV25 9336 305 70112 Standard marking * bulk pack
www.datasheetarchive.com/files/philips/pip/blv25.html
Philips 01/02/2000 25.11 Kb HTML blv25.html
(Volts) P4KE22A P4KE22A P4KE22A P4KE22A SD TVS DO-41 DO-41 DO-41 DO-41 STD 400 18.8 13 20.9 30.6 JANS 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD 500 16.7 16.4 20.9 30.5 JANS 1N6114AUS 1N6114AUS 1N6114AUS 1N6114AUS SA TVS E SQ. MELF SM 500 16.7 16.4 20.9 30.5 JANTX 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD 500 16.7 16.4 20.9 30.5 JANTX 1N6114AUS 1N6114AUS 1N6114AUS 1N6114AUS SA TVS E SQ. MELF SM 500 16.7 16.4 20.9 30.5 JAN 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD 500 16.7 16.4 20.9 30.5 JAN 1N6114AUS 1N6114AUS 1N6114AUS 1N6114AUS SA TVS E SQ. MELF SM 500 16.7 16.4 20.9 30.5 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD 500 16.7 16.4 20.9 30.5 1N6114AUS 1N6114AUS 1N6114AUS 1N6114AUS SA TVS E SQ. MELF SM 500 16.7 16.4 20.9 30.5 JANTXV 1N6114A 1N6114A 1N6114A 1N6114A SA TVS E STD
www.datasheetarchive.com/files/microsemi/products/tvs/53_20.9.htm
Microsemi 04/01/1999 21.73 Kb HTM 53_20.9.htm
* Discrete Bipolar Transistor Electrical Parameters * * Product: KSA1142 KSA1142 KSA1142 KSA1142 / Audio Frequency Amplifier * Package: TO-126 * Terminals: Emitter(1) Collector(2) Base(3 NF = 1 + BR = 0.115 NR = 1 ISE = 1.7378E-13 7378E-13 7378E-13 7378E-13 + NE = IKF = 0.121 + IKR = 0.524807 RB = 30.5 RBM = 0.20 + 1 ) *-
www.datasheetarchive.com/files/fairchild/simulation-models/ksa1142.lib
Fairchild 22/10/2012 1.27 Kb LIB ksa1142.lib
20.9 LCE17 LCE17 LCE17 LCE17 CASE-1 STD 1500 17 10 30.5 LCE17A LCE17A LCE17A LCE17A 17 5 33.9 SA130A SA130A SA130A SA130A DO-41 DO-41 DO-41 DO-41 STD 500 17 10 30.5 CHF5KP17 CHF5KP17 CHF5KP17 CHF5KP17 SEE FACTORY STD 5000 17 10 30.5 CHF5KP17A CHF5KP17A CHF5KP17A CHF5KP17A SEE 30.5 SMCJ17A SMCJ17A SMCJ17A SMCJ17A SMCJ SM 1500 17 5 27.6 HSMCJ17 HSMCJ17 HSMCJ17 HSMCJ17 SEE FACTORY STD 2000 17 30.5 23.1 HSMCJ17A HSMCJ17A HSMCJ17A HSMCJ17A SEE FACTORY STD
www.datasheetarchive.com/files/microsemi/products/tvs/8_17-v1.htm
Microsemi 07/12/1999 79.7 Kb HTM 8_17-v1.htm
RAM 1 Wireless Phone, Pager, PDA, Portable Instrumentation 1.77 BQ2019 BQ2019 BQ2019 BQ2019 Multi-Chemistry Battery Monitor 3.05 1 HDQ 64 RAM, FLASH 1 Wireless Phone, Pager, PDA PDA Applications 3.05 0.25 SDQ 64 RAM, FLASH 1 Wireless Phone, Pager, PDA Counter W/1-Wire I/F (HDQ) 3.05 1 HDQ 64 RAM, FLASH 1 Wireless Phone, PDA, Consumer Counter with Voltage Measurement 3.05 0.25 HDQ 64 RAM, FLASH 1 Wireless Phone, PDA
www.datasheetarchive.com/files/texas-instruments/docs/html/tables/battery_monitoring_1-v1.html
Texas Instruments 19/08/2003 5.52 Kb HTML battery_monitoring_1-v1.html
No abstract text available
www.datasheetarchive.com/download/6885988-772112ZC/nec_devicesv2.1.zip (NE68719v1_p6-2p2_1_1.s2p)
Spice Models 29/07/2012 4009.86 Kb ZIP nec_devicesv2.1.zip