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CS496112-CQZ Cirrus Logic 32-Bit AUDIO DSP IC; Package/Case:144-LQFP; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes visit Digikey
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1 micro farad capacitor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: mode please choose around 1 micro farad capacitor. Please take care of droop voltage and necessary , the droop at pixel by pixel. In this mode please choose O. lmicro farad capacitor. (2) Clamp mode , that the document prints correctly. 1, AK8412 ASAHI KASEI 11 5EEEMZ- = PRELIMINARY= 1 AK8412 chl%h sensor(CIS/C!Cll) Analog Preprocessor Features u Processing speed: lch , correction(9bit, + 250mV) Offset cancellation(8bit, * 250mV,3 independent offset) ·l Gain adjustment 1-X 4 Asahi Kasei Microsystems
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capacitor 1 micro farad 31R4 4139 sensor cny1 sample and hold VR13F1 13VSS
Abstract: micro farad capacitor. Please take care of droop voltage and necessary clamp time in this mode. . , voltage buffer output for video ADC External capacitor is necessary for each pin. Power supply .1 , mode please choose O.lmicro farad capacitor. . (2) Clamp mode This mode is for interfacing with , cancellation(8bit, * 250mV,3 independent offset) , u Gain adjustment 1-X 4 Gain adjustment(Bbit,3 independent gain) u Total perforrnance(CDS - Video ADC) 10bit, No missing Codes DNL:o.5LsB(Typ.) INL: 1. OLSB -
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Fl14F CCD video JDS SB switch AK8410 AK841
Abstract: be defined by the supplied CKCL. In this mode please choose around 1 micro farad capacitor. Please , ic ro farad capacitor. (2) Clamp mode This mode is for interfacing with CCD with sample hold and , e a tu re s Processing speed: lc h :1 0 M sample / sec 2ch:5M X 2 sample I sec 3ch:3.3M X 3 sample / sec Input signal level 2Vp-p(typ.) Ilnput signal polarity can be selected(C C D /C IS ) ·1 , independent offset) ·1 Gain adjustm ent 1 ~ X 4 Gain adjustm ent(8bit,3 independent gain) T otal perform ance -
OCR Scan
Abstract: densities. Fig. 1 Specific Energy of Capacitor Types 10000 SPECIFIC ENERGY Specific Energy (mFV/cc , ELECTROLYTIC CAPACITOR 10 100 10 1000 1 10000 Capacitance (mF) There are two negative , BestCapTM Supercapacitors MAIN FEATURES · High specific capacitance · 0.022 Farad to 0.560 Farad , capability · Low Leakage current: Down to 5 micro Amperes · Non-polar · Foot prints 28x17 mm or 48x30 mm , technical data relate to an ambient temperature of +25oC Capacitance Mili Farad +80%-20% ESR (milliOhm AVX
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milli farad capacitor 100 micro farad electrolytic capacitor 100 micro farad capacitor capacitor 0.1 micro farad 0.1 micro farad capacitor gsm based energy meter BZ013B403Z BZ013A703Z BZ013B803Z
Abstract: , power and capacitance densities. Fig. 1 Specific Energy of Capacitor Types 10000 SPECIFIC ENERGY , A ELECTROLYTIC CAPACITOR 10 0.1 1 10 100 1000 1 10000 Capacitance (mF , 2000 Time (uSeconds) Battery Voltage Battery and Capacitor Voltage Current Pulse 3000 4000 5 4 3 2 1 0 , with Pulse Capacitor Battery Alone GSM Pulse @ 2 Amps 0 Deg C ENGINEERING GUIDANCE NOTES 1 , BestCapTM Supercapacitors MAIN FEATURES · High specific capacitance · 0.03 Farad to 0.56 Farad · AVX
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BZ019A333Z BZ025A204Z bz025a 0.1 micro farad ceramic capacitor 1000 micro farad electrolytic capacitor 103 0.1 micro farad capacitor 400 micro farad capacitor BZ013A144Z BZ015B303Z BZ015A503Z BZ015B603Z BZ015A104Z BZ017A333Z
Abstract: , power and capacitance densities. Fig. 1 Specific Energy of Capacitor Types 10000 SPECIFIC ENERGY , A ELECTROLYTIC CAPACITOR 10 0.1 1 10 100 1000 1 10000 Capacitance (mF , 2000 Time (uSeconds) Battery Voltage Battery and Capacitor Voltage Current Pulse 3000 4000 5 4 3 2 1 0 , with Pulse Capacitor Battery Alone GSM Pulse @ 2 Amps 0 Deg C ENGINEERING GUIDANCE NOTES 1 , BestCapTM Supercapacitors MAIN FEATURES · High specific capacitance · 0.03 Farad to 0.56 Farad · AVX
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KYOCERA product label capacitor 22 mili farad capacitor 100 micro farad AVX LABEL 22 micro farad ceramic capacitor AVX label DETAIL BZ01CA223Z BZ023A284Z BZ023A564Z BZ025A404Z
Abstract: , power and capacitance densities. Fig. 1 Specific Energy of Capacitor Types 10000 SPECIFIC ENERGY , A ELECTROLYTIC CAPACITOR 10 0.1 1 10 100 1000 1 10000 Capacitance (mF , 2000 Time (uSeconds) Battery Voltage Battery and Capacitor Voltage Current Pulse 3000 4000 5 4 3 2 1 0 , with Pulse Capacitor Battery Alone GSM Pulse @ 2 Amps 0 Deg C ENGINEERING GUIDANCE NOTES 1 , BestCapTM Supercapacitors MAIN FEATURES · High specific capacitance · 0.03 Farad to 0.56 Farad · AVX
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Abstract: capacitor (1.0 micro Farad) on the DC side of the RFout inductor is recommended for providing instantaneous , . It requires a DC bias of 65mA through a series inductor and a resistor. A bypass capacitor (1.0 micro , CE105K1NR Various TKS2386CT-ND 142-0701-881 ECG005 60-000009-003 QTY. 2 1 1 1 2 1 1 DESCRIPTION Capacitor , Note 1 f = 2000MHz f = 2000MHz f = 2000MHz 4.2 4.8 Note 1: OIP3 = Pout (by power meter , , Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 1 PRELIMINARY DATA SHEET ECG055 EiC
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C2 SOT-89 RF amplifier sot89 CA 19 1000MH 2000MH 3000MH 1500MH 2500MH SS-000507-000
Abstract: capacitor (Farad) Cin (min) = 100 â'¢ CH Farad k For the MC6805S2 this comes out at: Cin (min) = , PACKAGE CASE 751 (SOâ'"8) 8 1 NO SUFFIX PLASTIC PACKAGE CASE 626 Figure 1. Representative Block Diagram and Simplified Application PIN CONNECTIONS Gnd 1 VDD VCC 8 VCC Clamp 2 , Cell Digital Inputs Micro Computer Analog Inputs ORDERING INFORMATION Rin Cin Device , '"8 Plastic DIP © Motorola, Inc. 1995 MOTOROLA ANALOG IC DEVICE DATA 1 TCF6000 MAXIMUM RATINGS Motorola
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TCF6000/D TCF6000D
Abstract: type converter is even simpler: k = Required accuracy (%) CH = Hold capacitor (Farad) Cin (min) = , ­8) 8 1 NO SUFFIX PLASTIC PACKAGE CASE 626 PIN CONNECTIONS Figure 1. Representative Block Diagram and Simplified Application Gnd 1 VDD VCC Clamp 2 Pin 6 Clamp Clamp 4 Gnd , Inputs Micro Computer Analog Inputs ORDERING INFORMATION Rin Cin Gnd Device TCF6000D , IC DEVICE DATA Package SO­8 Plastic DIP Rev 0 1 TCF6000 MAXIMUM RATINGS (TA = 25 Motorola
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car ignition circuit diagram
Abstract: . A bypass capacitor (1.0 micro Farad) on the DC side of the RFout inductor is recommended for , micro Farad) on the DC side of the RFout inductor is recommended for providing instantaneous current , CE105K1NR 2 1 Capacitor (0603) Capacitor (0603) C1, C2 C3 ROHM Various 1 Resistor , Note 1 dB 5.3 V Note 1: OIP3 = Pout (by power meter, total 2-tone power) + (IM3(dB)/2) - , SS-000457-000 Rev 1.3 1 ECG005 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER EiC
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0.5 micro farad capacitor capacitor 10 micro farad AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000
Abstract: series inductor/ resistor pair. Using a bypass capacitor (1.0 micro Farad) on the DC side of the series , (1.0 micro Farad) on the DC side of the series inductor/ resistor is also recommended. Use a DC , capacitor and the RF choke inductor (large values are required in both cases). Electrical Specifications , 1000MHz = 2000MHz = 3000MHz 11.5 11.0 3.5 3.9 dB dB dBm dBm Note 1 dB 4.3 V Note 1: OIP3 = Pout (by power meter, total 2-tone power) + (IM3(dB)/2) - 3dB CAUTION EiC
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ECG006 capacitor 47 micro farad ECG00 MARUWA CAPACITORS "H series" SS-000352-000
Abstract: capacitor (1.0 micro Farad) on the DC side of the RFout inductor is recommended for providing , resistor. A bypass capacitor (1.0 micro Farad) on the DC side of the RFout inductor is recommended for , capacitor and the RF choke inductor (large values are required in both cases). Electrical Specifications , Vde Device Voltage Note 2 3.1 3.4 dBm dBm 3.7 Note 1 V Note 1: OIP3 = , ) 979-8902 SS-000351-000 Rev G 1 ECG004 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND EiC
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10 micro farad capacitor capacitor 270 micro farad
Abstract: 65mA through a series inductor and a resistor. A bypass capacitor (1.0 micro Farad) on the DC side of , 65mA through a series inductor and a resistor. A bypass capacitor (1.0 micro Farad) on the DC side of , MARU MARU CE103K1NR CE105K1NR 2 1 Capacitor (0603) Capacitor (0603) C1, C2 C3 ROHM , 15.0 dB NF Nois e Figure f = 2000MHz Vde Device Voltage Note 1 4.3 4.2 4.8 dB 5.3 V Note 1: OIP3 = Pout (by power m eter, total 2-tone power) + (IM3(dB)/2) - 3dB EiC
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transistor 21789 223-18 42050 026 67306
Abstract: pair. Using a bypass capacitor (1.0 RFout micro Farad) on the DC side of the the series inductor , . A bypass capacitor (1.0 micro Farad) on the DC side of the RFout inductor is recommended for , capacitor and the RF choke inductor (large values are required in both cases). Electrical Specifications , 3000MHz = 1000MHz = 2000MHz = 3000MHz 3.0 3.4 dB dB dBm dBm Note 1 dB 3.8 V Note 1: OIP3 = Pout (by power meter, total 2-tone power) + (IM3(dB)/2) - 3dB CAUTION! SENSITIVE EiC
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ECG001 capacitor 220 micro farad 1000 micro farad capacitor 1000 micro farad Maruwa SS-000349-000
Abstract: The standard unit of capacitance is the farad. A capacitor has a capacitance of 1 farad when 1 coulomb charges it to 1 volt. One farad is a very large unit and most capacitors have values in the micro (10-6 , Margin Electrodes Multilayer Ceramic Capacitor Figure 1 Formulations ­ Multilayer ceramic , capacitor is given by the formula: E = 1/2CV2 E = energy in joules (watts-sec) V = applied voltage C = , General Description Basic Construction ­ A multilayer ceramic (MLC) capacitor is a monolithic AVX
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CAPACITOR 100 nano FARAD 25 VOLT 10 pico farad capacitor CAPACITOR 10 nano FARAD 25 VOLT
Abstract: Terminated Edge Margin Electrodes Multilayer Ceramic Capacitor Figure 1 Formulations â , they are the most stable capacitor available. The most popular Class 1 multilayer ceramic capacitors , system in cm) Capacitance â'" The standard unit of capacitance is the farad. A capacitor has a capacitance of 1 farad when 1 coulomb charges it to 1 volt. One farad is a very large unit and most capacitors have values in the micro (10-6), nano (10-9) or pico (10-12) farad level. Dielectric Constant â AVX
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Abstract: characteristic. Thus they are the most stable capacitor available. The most popular Class 1 multilayer ceramic , Percent 2.5 50 Curve 1 - 100 VDC Rated Capacitor 8.0 Curve 2 - 50 VDC Rated Capacitor Curve 3 - 25 VDC Rated Capacitor 6.0 Curve 3 Curve 2 4.0 Curve 1 2.0 0 .5 1.0 1.5 2.0 2.5 , system in cm) Capacitance ­ The standard unit of capacitance is the farad. A capacitor has a capacitance of 1 farad when 1 coulomb charges it to 1 volt. One farad is a very large unit and most AVX
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CAPACITOR 22 MICRO FARAD 25 VOLT 1 micro farad capacitor 50 VOLT CAPACITOR .22 MICRO FARAD 50 VOLT CAPACITOR 100 pico FARAD 25 VOLT high frequency dielectric heating 20 volt 1 farad capacitor
Abstract: standard unit of capacitance is the farad. A capacitor has a capacitance of 1 farad when 1 coulomb charges it to 1 volt. One farad is a very large unit and most capacitors have values in the micro (10-6 , Terminated Edge Margin Electrodes Multilayer Ceramic Capacitor Figure 1 Formulations ­ , they are the most stable capacitor available. The most popular Class 1 multilayer ceramic capacitors , Symbol 25 37.5 Volts AC at 1.0 KHz Curve 1 - 100 VDC Rated Capacitor 8.0 Curve 2 - 50 VDC Rated AVX
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capacitor 33 micro farad Piezo Ceramic plates capacitor 47 nano
Abstract: 45mA through a series inductor and a resistor. A bypass capacitor (1.0 micro Farad) on the DC side of , 45mA through a series inductor and a resistor. A bypass capacitor (1.0 micro Farad) on the DC side of , capacitor and the RF choke inductor (large values are required in both cases). Electrical Specifications , Vde Device Voltage 16.0 3.5 3.9 dB dB Note 2 dBm dBm 4.3 Note 1 V Note 1: OIP3 = Pout (by power meter, total 2-tone power) + (IM3(dB)/2) - 3dB Note 2: Pin= -3dBm (Gain EiC
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ECG002 450 micro farad capacitor 47 micro farad capacitor capacitor 0.47 micro farad CE101 FR10K SS-000350-000
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