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-133dBm

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Abstract: @+20dBm @F1=1710MHz.1785MHz P2 @-13.3dBm @F2=F1+1575.42MHz P1@+20dBm @F1=1850MHz.1910MHz P2 @-13.3dBm @F2=F1+1575.42MHz IIP3 , *F1+1575.42MHz P1@+21dBm @F1=824MHz.915MHz P2@-13.3dBm @F2=2*F1+1575.42MHz P1@+20dBm @F1=2500MHz.2570MHz P2@-13.3dBm @F2=2*F1-1575.42MHz Group delay ripple (p-p) 1573.42 . 1577.42 MHz - 1.2 EPCOS
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B9080 B39162B9080L310
Abstract: @+21dBm @F1=824MHz.915MHz P2 @+14dBm @F2=F1+1575.42MHz P1@+20dBm @F1=1710MHz.1785MHz P2 @-13.3dBm @F2=F1+1575.42MHz P1@+20dBm @F1=1850MHz.1910MHz P2 @-13.3dBm @F2=F1+1575.42MHz IIP3 (3rd order Input Intercept Point) 2 tone (cw) method: P1@+20dBm @F1=1710MHz.1785MHz P2 @+11dBm @F2=2*F1+1575.42MHz P1@+21dBm @F1=824MHz.915MHz P2@-13.3dBm @F2=2*F1+1575.42MHz P1@+20dBm @F1=2500MHz.2570MHz P2@-13.3dBm @F2=2*F1-1575.42MHz Group delay ripple (p-p) 1573.42 . 1577.42 MHz - 1.2 EPCOS
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B39162B9444M410
Abstract: @+21dBm @F1=824MHz.915MHz P2@-13.3dBm @F2=2*F1+1575.42MHz P1@+20dBm @F1=2500MHz.2570MHz P2@-13.3dBm @F2=2*F1 , @+20dBm @F1=1710MHz.1785MHz P2 @-13.3dBm @F2=F1+1575.42MHz P1@+20dBm @F1=1850MHz.1910MHz P2 @-13.3dBm @F2=F1+1575.42MHz EPCOS
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b908 C61157-A7-A151 F61074-V8224-Z000 p1225 JESD22-A114 B39162-B9080
Abstract: 0.4 Pout -25 -8 -30 -35 IDD P-1dB(IN)=+13.3dBm -30 -20 -10 0 10 -10 , =620.1MHz) -20 0.2 P-1dB(IN)=+13.3dBm -30 -20 -10 0 10 20 (Exclude PCB, Connector -
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NJG1129MD7 HK1005 LNA CIRCUIT EQFN14-D7P LQP03T GRM03 EQFN14-D7
Abstract: SPAN VBW -13.3dBm MKR 200.0 D MKR 140ms 200.0kHz 901.9967MHz 3.0kHz ATTEN , SPAN VBW -13.3dBm MKR 200.0 D MKR 200.0kHz dB CENTER ATTEN 100 kHz National Semiconductor
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LMX2316TM LMX2316 LMX2316TMD HP8563E Manual HP8560A HP8563E varil vco OF12SHCA 2C18PPMZZ
Abstract: )=+13.3dBm -30 -20 -10 0 10 -10 -40 20 0 -30 -20 -10 Pin (dBm) Pout, IM3 , Pout, IM3 (dBm) 0 Pin (dBm) (f1=620MHz, f2=620.1MHz) -20 0.2 P-1dB(IN)=+13.3dBm New Japan Radio
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Abstract: -35 -40 -40 -30 -20 P-1dB(IN)=+13.3dBm -10 Pin (dBm) 0 10 20 Pout -6 0.4 -8 P-1dB(IN)=+13.3dBm IDD 0.2 -10 -40 0 -30 -20 -10 Pin (dBm) 0 10 20 Pout, IM3 vs. Pin (f1=620MHz, f2 New Japan Radio
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470MH 770MH
Abstract: (dBm ) 5 DD -5 -10 12 10 -15 8 -20 6 4 -25 P-1dB(IN)=-13.3dBm P-1dB(IN)=-13.3dBm -30 -40 -35 -30 -25 -20 -15 -10 -5 2 -40 0 -35 -30 New Japan Radio
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MLK1005 NJG1116 NJG1116BHB3 2140MH GRP15
Abstract: -30 -35 -40 -40 -30 -20 P-1dB(IN)=+13.3dBm -10 Pin (dBm) 0 10 20 Pout -6 0.4 -8 P-1dB(IN)=+13.3dBm IDD 0.2 -10 -40 0 -30 -20 -10 Pin (dBm) 0 10 20 Pout, IM3 vs. Pin (f1=620MHz, f2 New Japan Radio
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Abstract: -10 12 10 -15 8 -20 6 4 -25 P-1dB(IN)=-13.3dBm P-1dB(IN)=-13.3dBm -30 -40 -
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100MH
Abstract: :Multichannel (12-CH) all-in-view :1575.42MHz ± 1MHz (C/A code) :-130dBm for acquisition, -133dBm for tracking New Japan Radio
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JLR-4331E CFQ-8773 JRC 4570 NWU-800 NWZ-4570 6 pin connector 6-282-6sg-522 700FX NMEA0183 JFV-250 6-282-6SG-522 WGS-84
Abstract: :1575.42MHz ± 1MHz(C/A code) :-130dBm for acquisition, -133dBm for tracking :15mRMS(C/A code, HDOP4 New Japan Radio
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JLR-4330E Jrc 1000 Radar Radar JRC 1000 JLR 4330E JRC GPS 112 JRC plot 700FX 84 JRC GPS112 SC-104 CFR-46/IEC60945 ISO9001 Y3-129N
Abstract: -4 0.6 -6 0.4 Pout -25 -8 -30 -35 IDD P-1dB(IN)=+13.3dBm -30 -20 , Pin (dBm) (f1=620MHz, f2=620.1MHz) -20 0.2 P-1dB(IN)=+13.3dBm -30 -20 -10 0 New Japan Radio
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F262
Abstract: =33.5dBm at 1950MHz POUT =13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From RF Micro Devices
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SBA-4089 BA4Z sba4089 sba-4089z InP transistor HEMT sot 163 Package 1950MH EDS-102822 SBA4089 SBA4089Z SBA-4089Z
Abstract: 1950MHz POUT =13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From Single RF Micro Devices
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SBA5086Z DS110722 SBA5086ZSQ SBA5086ZPCK1 SBA5086ZSR 850MH
Abstract: Features · IP3 = 34.7dBm @ 1950MHz Gain & Return Loss · Pout=13.3dBm @-45dBc ACP IS-95 1950MHz · Sirenza Microdevices
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SBA-5086 BA5 Amplifier BA5 marking EDS-102742
Abstract: 1950MHz POUT =13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From Single RF Micro Devices
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Abstract: 34.0dBm @ 1950MHz also manufactured with green molding compounds that con- · Pout=13.3dBm @-45dBc ACP IS Sirenza Microdevices
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sba-5086z RW mmic SBA-5086Z
Abstract: 34.0dBm @ 1950MHz Pout=13.3dBm @-45dBc ACP IS-95 1950MHz Gain & Return Loss 25 Robust 1000V ESD Sirenza Microdevices
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mmic marking L SIRENZA MARKING
Abstract: @+18.9dBm @F1=2010MHz.2025MHz P2@+13.3dBm @F2=2444.2475MHz P1@+18.9dBm @F1=2010MHz.2025MHz P2@+11.0dBm @F2=5595.5625MHz fC EPCOS
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B8400 P1213D B39162B8400P810
Abstract: @+21dBm @F1=824MHz.915MHz P2 @+14dBm @F2=F1+1575.42MHz P1@+20dBm @F1=1710MHz.1785MHz P2 @-13.3dBm @F2=F1+1575.42MHz P1@+20dBm @F1=1850MHz.1910MHz P2 @-13.3dBm @F2=F1+1575.42MHz IIP3 (3rd order Input Intercept Point) 2 tone (cw) method: P1@+20dBm @F1=1710MHz.1785MHz P2 @+11dBm @F2=2*F1+1575.42MHz P1@+21dBm @F1=824MHz.915MHz P2@-13.3dBm @F2=2*F1+1575.42MHz P1@+20dBm @F1=2500MHz.2570MHz P2@-13.3dBm @F2=2*F1-1575.42MHz Group delay ripple (p-p) 1573.42 . 1577.42 MHz - 1.2 B&B Electronics
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FOSTDRP0912 232FLST RS-485 89/336/EEC
Abstract: Features IP3=34.0dBm at 1950MHz POUT =13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD Infineon Technologies
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BFP740 TR103 BFP740 application note bfp740 board 2008-D
Abstract: vs Frequency GaAs HBT   IP3=33.5dBm at 1950MHz POUT =13.3dBm at -45dBc ACP IS -
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CGY2010G PCA5075 SA1620 LQFP48 MGB764
Abstract: Terminals 5 0 SiGe HBT -5 GaAs pHEMT -10 Si CMOS IP3=34.0dBm at 1950MHz POUT =13.3dBm RF Micro Devices
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2400MH 3500MH DS111204
Abstract: (dBm ) 5 DD -5 -10 12 10 -15 8 -20 6 4 -25 P-1dB(IN)=-13.3dBm P-1dB(IN)=-13.3dBm -30 -40 -35 -30 -25 -20 -15 -10 -5 2 -40 0 -35 -30 -
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LQFP64 LQFP80 HF power amplifier ze 003 ic
Abstract: -30 -35 -40 -40 -30 -20 P-1dB(IN)=+13.3dBm -10 Pin (dBm) 0 10 20 Pout -6 0.4 -8 P-1dB(IN)=+13.3dBm IDD 0.2 -10 -40 0 -30 -20 -10 Pin (dBm) 0 10 20 Pout, IM3 vs. Pin (f1=620MHz, f2 RF Micro Devices
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Abstract: 1950MHz POUT =13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From Single Agilent Technologies
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E8362B/C E8363B/C E8364B/C E8364-90031
Abstract: =33.5dBm at 1950MHz POUT =13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From RF Micro Devices
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Abstract: 0.4 Pout -25 -8 -30 -35 IDD P-1dB(IN)=+13.3dBm -30 -20 -10 0 10 -10 , =620.1MHz) -20 0.2 P-1dB(IN)=+13.3dBm -30 -20 -10 0 10 20 (Exclude PCB, Connector RF Micro Devices
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