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Abstract: SONY. CXK58257AP/ASP/AM â"¢LX/85LX/iolx,I2LX -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High , -70LLX, 85LLX,10LLX,12LLX; Standby : 1 nW (Typ.) Operation : 15mW (Typ.) CXK58257AP/ASP/AM-70LX, 85LX.10LX.12LX , /10llx/12llx Unit Min. Typ.* Max. Min. Typ.* Max. Input leakage current lu Vin=GND to Vcc -0.5 , 60 - 23 60 12LX/12LLX 20 60 - 20 60 -25 to 85 °C - 50 - - 10 Standby current isbi CE S , conditions 85LX/85LLX/1OLX/ 10LLX/12LX/12LLX/ Cl* =100pF, 1TTL 70LX/70LLX Cl * =30pF, 1TTL Cl =±= vr -
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S0P-28P-L05 CXK5825 CXK58257 LX/85LX/ 70LLX CXK58257AP/ASP/AM-85LX CXK58257AP/ASP/AM-10LX CXK58257AP/ASP/AM-12LX
Abstract: access time: (Access time) 100ns (Max.) 3.0V operation -10LLX -12LLX 3.3V operation -10LLX 120ns (Max.) 85ns (Max.) -12LLX 100ns (Max.) â'¢ Low standby current: 7.0jjA (Max , â'" 0.12 â'" â'" CÃ'> V cc-0 .2 V 12LLX -2 5 to +85°C -25 to +70°C +25°C , load conditions Cl*1 = 100pF, 1TTL Cl*1 = 30pF, 1TTL -12LLX Cl*1 = 100pF, 1TTL Cl*1 = 100pF , -10LLX Vcc = 3.3V ± 0.3V -12LLX -10LLX Min. Max. Min. Max. Min. Max. Read -
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CXK5T8257BTM/BYM/BM CXK5T8257BTM/BYM CXK5T8257BM PE96509-ST CXK5T8257BTM
Abstract: SONY® CXK58257ATM/AYM O^5LX/ olx/ 2LX -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed , (Max.) CXK58257ATM/AYM-1OLX, -10LLX 100ns (Max.) CXK58257ATM/AYM-12LX, -12LLX 120ns (Max.) â'¢ Single , /10llx/12llx Unit Min. Typ.* Max. Min. Typ.* Max. Input leakage current Ili Vin=GND to Vcc -0.5 , 12LX/12LLX 20 60 - 20 60 -25 to+85 "C 50 - - 10 |sb1 Cà S Vcc-0.2V -25 to +70 °C 25 - - , 85LX/85LLX/1OLX/ 10LLX/12LX/12LLX Ct * =100pF, 1TTL 70LX/70LLX Cl * =30pF, 1TTL TTL Cl 77r * Cl -
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28P-1 CXK58257ATM CXK58257AYM CXK58257ATM/AYM-70LX CXK58257ATM/AYM-85LX
Abstract: S4E D Û3Ã"53Ã"3 00D47b? 7Ã"5 «SONY sony. cxk581ooop/m -1OLX/12LX/15LX/ 10LLX/12LLX/15LLX , -1OLX, 12LX, 15LX 10 nW(Typ. )/35mW(Typ. ) CXK581000P/M-1 OLLX, 12LLX, 15LLX 3. 5 uW(Typ. )/35mW(Typ. ) â , conditions â'" 10LX/12LX/15LX -1OLLX/12LLX/15LLX Unit Min. Typ* Max. Min. Typ* Max. Input leakage , T-46-23-14 â'¢ Read cycle (WE= "H") Item Symbol 1OLX/1OLLX â'" 12LX/12LLX â'" 15LX/15LLX Unit , /12LLX â'" 15LX/15LLX Unit Min. Max. Min. Max. Min. Max. Write cycle time twc 100 â'" 120 - 150 - -
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CXK581000P CXK581000M CXK581000 Sony CMOS 00D47 10LLX/12LLX/15LLX CXK581
Abstract: Sony. CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX -7 0 L X Í3 5 L X ,1 0 L J < ,2 L X * 32768-word x 8 , -12LX, 12LLX 120ns (Max.) · Low power operation: CXK58257AM-70LLX, 85LLX,10LLX,12LLX; Standby :1 nW(Typ , CXK58257AP/AW (Vcc=5V ± 10%, GND=ov, Ta= - 25 to +85 °c ) -70LX /85LX/10LX/12LX -70LLX /85LLX/10LLX/12LLX , =100% louT=0mA 85LX/85LLX 10LX/10LLX 12LX/12LLX -2 5 to 85 °C - - 60 60 10 5 mA , conditions 85LX/85LLX/1OLX/ 10LLX/12LX/12LLX/ 70LX/70LLX Conditions V ih=2.4V V il=0.6V tr=5ns tf=5ns 1.5V CL -
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CXK58257AP CXK58257AM CXK58257AP/AM-70LX CXK58257AP/AM-85LX CXK58257AP/AM-10LX
Abstract: CXK5T81000ATM/AYM/AM -10LLX/12LLX 131072-word × 8-bit High Speed CMOS Static RAM Preliminary , (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) · Low standby , 353 12LLX - 25 35 - 5 10 mA ICC3 Cycle time 1us duty = 100% IOUT = , Input fall time Input and output reference level Output load conditions -10LLX -12LLX 1.4V , 2.7 to 3.6V Item Symbol -10LLX VCC = 3.3V ± 0.3V -12LLX -10LLX Min. Read cycle Sony
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CXK5T81000AM CXK5T81000ATM CXK5T81000AYM L01r CXK5T81000ATM/AYM
Abstract: CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word × 8-bit High Speed CMOS Static RAM Preliminary For , 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) · Low , - - 0.12 mA - 12LLX ­25 to +85°C ­25 to +70°C Min. cycle duty = 100%, IOUT = , Input and output reference level -10LLX Output load conditions -12LLX 1.4V 1.4V CL1 = 100pF , -10LLX VCC = 3.3V ± 0.3V -12LLX -10LLX -12LLX Min. tRC tAA Address access time tCO Sony
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CXK5T8257BYM TSOP-28P-L01 TSOP028-P-0000-A 28PIN
Abstract: back up. CXK5T161OOTM -10LLX/12LLX 44 pin TSOP (Plastic) Features â'¢ Extended operating temperature , operation -10LLX -12LLX 3.3V operation -10LLX -12LLX â'¢ Low standby current (Access time) 100ns (max , '" â'" mA |CC2 Min. cycle Duty = 100% lout = 0mA 10LLX â'" 35*3 50*4 mA 12LLX â'" 35 50 Average , Cl*1 = 100pF, 1TTL Cl*1 = 30pF, 1TTL -12LLX Cl*1 = 100pF, 1TTL Cl*1 = 100pF, 1TTL *1 Cl includes , Symbol Vcc = 2.7 to 3.6V Vcc = 3.3V ± 0.3V Unit -10LLX -12LLX -10LLX -12LLX Min. Max. Min -
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CXK5T16100TM A130- A120- I/016
Abstract: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static , access time: 3.0V operation -10LLX -12LLX 3.3V operation -10LLX -12LLX (Access time) (Max , 3 mA ICC2 Min. cycle duty = 100% Io u t = 0mA 10LLX â'" 25*z 35*3 12LLX , conditions Cl*1 = 100pF, 1TTL Cl* 1 = 30pF, 1TTL -12LLX Cl*1 = 100pF, 1TTL Cl*1 = 100pF, 1TTL *1 , to 3.6V Symbol Item -10LLX Vcc = 3.3V ± 0.3V -12LLX -10LLX -12LLX Min. Max -
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CXK5T81 CXK5T81OOOATM/AYM CXK5T81OOOAM CXK5T81OOOATN/AYN
Abstract: L X /1 2 L X SONY CORP/COMPONENT PRODS -70LLX/85LLX/1OLLX/12LLX * 32768-word x 8-bit High , .) CXK58257AP7AM-12LX.12LLX 120ns (Max.) · Low power operation: CXK58257AM-70LLX, 85LLX,10LLX,12LLX; Standby : 1 nW , 50 25 5 2 2 - 0.4 - '-7ÖLLX/85LLX/10LLX/12LLX Min. -0 .5 -0 .5 -T yp .* - - ' 3 1 , /10LLX -12LX/12LLX -25 to 85 °C -25 to 70 °C -1 - . - -2.4 -r - , /12LX/12LLX/ 70LX/70LLX Conditions V ih=2.4V Vil=0.6V tr=5ns tf=5ns 1.5V Cl *=100 pR 1TTL Cl * =30pF -
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sony cx 168
Abstract: '¢ Fast access time: (Access time) 3.0V operation CXK5T8512TM/TN-1OLLX CXK5T8512TM/TN-12LLX Vcc 100ns (Max.) 120ns (Max.) * - o GND 3.3V operation CXK5T8512TM/TN-1 OLLX CXK5T8512TM/TN-12LLX , 12LLX â'" 25 35 â'" 5 10 mA ICC3 Cycle time 1 ps duty = 100% Io u t = 0mA , l * 1 = 30pF, 1TTL -12LLX C l * 1 = 100pF, 1TTL C l * 1 = 100pF, 1TTL TTL V ih = 2.2 , 2.7 to 3.6V Symbol Item -10LLX Vcc = 3.3V ± 0.3V -12LLX -10LLX -12LLX Unit -
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CXK5T8512TM/TN CXK5T8512TM CXK5T8512TM/TN-12LLX CXK5T8512TN K5T8512TM/TN 32PIN
Abstract: SONY» C X K 5 8 2 5 7 A T M /A Y M o ^ 5lx/ olx/i 2lx -70LLX/85LLX/1OLLX/12LLX , -12LX, -12LLX 120ns (Max.) â'¢ Single +5V Supply: 5V ± 10% Pin D escription Symbol Description A0 to , /85LX/10LX/12LX Item -70LLX/85LLX/1OLLX/12LLX Test conditions Symbol Unit Min. T y p , , Duty=100% louT=0mA mA 12LX/12LLX 60 â'" 20 60 - 50 â'" - 10 , ih=2.4V 1.5V Output load conditions Cl =±: 77r 85LX/85LLX/1OLX/ 10LLX/12LX/12LLX -
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Abstract: operation -10LLX -12LLX 3.3V operation -1OLLX -12LLX (Access time) 100ns (max.) 120ns (max.) 85ns (max , - 10LLX 12LLX - - - 35*3 35 - 50*4 50 mA |CC2 mA Average operating current , Input rise time Input fall time Input and output reference level Output load conditions -10LLX -12LLX V , Ö3ÖS303 O Q l b ? ^ MHS SONY · Read cycle (WE = "H") Vcc = 2.7 to 3.6V Item Symbol -10LLX -12LLX CXK5T16100TM Vcc = 3.3V ± 0.3V -10LLX -12LLX Unit Min. Max. Min. Max. Min. Max. Min. Max. Read cycle time -
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5 pin A13E a13e ic PE96405B6Y-PS 44PIN 044-P-0400-A
Abstract: CXK5T8512TM/TN-1OLLX 100ns (Max.) CXK5T8512TM/TN-12LLX 120ns (Max.) 3.3V operation CXK5T8512TM/TN-10LLX 85ns (Max.) CXK5T8512TM/TN-12LLX 100ns (Max.) · Low standby current: 14//A (Max.) · Low data retention , power supply current Icci - 10LLX 12LLX - - 1 3 35*3 35 mA ICC2 Min. cycle duty , tr = 5ns tf = 5ns 1.4V C l d= TTL Test circuit 777 -10LLX -12LLX Cl* 1 = 100pF, 1TTL Cl* 1 , 100 50 - - - 40 35 -12LLX Min. 120 - - - - 10 10 5 - - Max. - 120 120 120 60 - - - 40 35 -
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a13g AI4-Q- 8512TM 12//A 32PJN TSOP-32P-102
Abstract: CXK5T8512TM/TN -10LLX/12LLX 65536-word × 8-bit High Speed CMOS Static RAM Description The , -10LLX 100ns (Max.) CXK5T8512TM/TN-12LLX 120ns (Max.) 3.3V operation CXK5T8512TM/TN-10LLX 85ns (Max.) CXK5T8512TM/TN-12LLX 100ns (Max.) · Low standby current: 14uA (Max.) · Low data retention current: 12uA , 353 12LLX - 25 35 - 5 10 mA ICC3 Cycle time 1us duty = 100% IOUT = , Input fall time Input and output reference level Output load conditions -10LLX -12LLX 1.4V Sony
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tHZ11 TSOP-32P-L01 TSOP032-P-0820 TSOP-32P-L02 TSOP032-P-0813
Abstract: CXK5T81000ATN/AYN -10LLX/12LLX 131072-word × 8-bit High Speed CMOS Static RAM Preliminary , .) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) · Low standby current , 12LLX - 25 35 - 5 10 mA ICC3 Cycle time 1us duty = 100% IOUT = 0mA CE1 , Input fall time Input and output reference level Output load conditions -10LLX -12LLX 1.4V , to 3.6V Item Symbol -10LLX VCC = 3.3V ± 0.3V -12LLX -10LLX Min. Read cycle time Sony
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CXK5T81000ATN CXK5T81000AYN TSOP-32P-L02R
Abstract: CXK5T8512TM/TN -10LLX/12LLX 65536-word × 8-bit High Speed CMOS Static RAM Preliminary For , .) CXK5T8512TM/TN-12LLX 120ns (Max.) 3.3V operation CXK5T8512TM/TN-10LLX 85ns (Max.) CXK5T8512TM/TN-12LLX , 353 12LLX - 25 35 - 5 10 mA ICC3 Cycle time 1us duty = 100% IOUT = , Input fall time Input and output reference level Output load conditions -10LLX -12LLX 1.4V , 3.6V Item Symbol -10LLX VCC = 3.3V ± 0.3V -12LLX -10LLX Min. Read cycle time Sony
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Abstract: SONY, CXK58257ATM/AYM -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM , .) CXK58257ATM/AYM-12LLX 120ns (Max.) · Single +5V Supply: 5V ± 10% Pin Description Symbol A0 to A14 1/01 to , =-25 to +85°C ) -70LLX/85LLX /10LLX/12LLX Test conditions V in=GND to Vcc CE=Vih or OE=Vih V i;o=GND , -2.4 Icct mA 5 60 60 60 60 10 30 25 23 20 Average operating current 85LLX 10LLX 12LLX , and output reference level Output load conditions 85LLX/10ILX/12LLX 70LLX Conditions V ih=2,4V V il -
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CXK58257ATM/AYM-70LLX CXK58257ATM/AYM-85LLX CXK58257ATM/AYM-101LX CXK58257ATM/AYM-12LLX TS0P028-P-Q000-B
Abstract: sony. CXK58110OTM/YM "10D , -10LX, -10LLX 100ns (Max.) CXK581100TM/YM-12LX, -12LLX 120ns (Max.) CXK581100TM/YM-15LX, -15LLX 150ns (Max.) â , %. GND=OV, Ta=-25 to +85°c) Item Symbol Test conditions â'"10LX/12LX/15LX â'"10LLX/12LLX/15LLX Unit , Manufacturer SONY cxk581100tm/ym â'¢ Read cycle (WE="H") Item Symbol -10LX/10LLX -12LX/12LLX -15LX/15LLX , -12LX/12LLX -15LX/15LLX Unit Min. Max. Min. Max. Min. Max. Write cycle time twc 100 - 120 - 150 - -
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sony CXK581100TM cida8 TS0P32 CXK581100TM CXK581100YM CXK581100TM/YM-10LX
Abstract: SONY. C X K 5 8 1 O O O P / â  OLX/12LX/15LX/ 1 10LLX/12LLX , tim e) C X K 5 8 1 0 0 0 P /M -1 O L X /1 OLLX 100ns (Max.) C X K 5 8 1 0 0 0 P /M - 1 2 L X /12LLX , operating characteristics Item (Vcc = 5V ± 10 %, GND = OV, Ta = - 25 to + 8 5 °C ) -1 OLLX/12LLX , ' ) Item Symbol â'"1OLX/1OLLX â'"12LX/12LLX â'"15LX/15LLX Min. Max. Min. Max. Min , '"10LX/1OLLX â'"12LX/12LLX â'"15LX/15LLX Min. Max. Min. Max. Min. Max. Unit W rite cycle -
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K581000P/M CXK581OOOP/M-1 CXK581000P/M XK581000P 581000M
Abstract: -1OLLX, 12LLX, 15LLX 3. 5 n*(Typ. )/35mW(Typ. ) â'¢ Single + 5V power supply: +5V±10% â'¢ Fully static , - 25 to +85°C) Item Symbol Test cond â'" 10LX/12LX/15LX -1OLLX/12LLX/15LLX Unit tions Min , cycle (WE = "H") Item Symbol â'" 1OLX/1OLLX â'" 12LX/12LLX â'" 15LX/15LLX Unit Min. Max. Min. Max , voltage levels. â'¢ Write cycle Item Symbol â'" 10LX/1OLLX -12LX/12LLX â'"15LX/15LLX Unit Min. Max , conditions â'" 10LX/12LX/15LX â'" 10LLX/12LLX/15LLX Unit Min. Typ. Max. Min. Typ. Max. Data -
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P-32P-01 000P/M-1 OLX/10LLX CXK581OOOP/M-1OLLX 0IP032-P-0600-A
Abstract: ) CXK581100TM/YM-10LX, -10LLX 100ns (Max.) CXK581100TM/YM-12LX, -12LLX 120ns (Max.) CXK581100TM/YM , %, GND=0V, Ta=-25 to +85°c ) -1 0LX/12LX/15LX -1 0LLX/12LLX/15LLX Max. Min. Typ.* Max , K581100TM /YM â'¢ Read cycle (WE=â'Hâ') Item Symbol -10LX/10LLX -12LX/12LLX -15LX/15LLX Min , cycle Item Symbol -10LX/10LLX -12LX/12LLX -15LX/15LLX Max. Min. Max. Min. Max , /12LLX/15LLX Min. Max. Min. Typ. Max. 2.2 *1 Typ. - 5.5 2.2 - -
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581100Y CXK58110OYM
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