The Datasheet Archive

Top Results (1)

Part Manufacturer Description Datasheet Download Buy Part
LM3S5R31-IBA80-C3 Texas Instruments Stellaris Microcontroller 103-NFBGA

zo 103 ma Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1985 - ZO 103

Abstract: zo 103 ma 2 way antenna splitter, circuit diagram 100MHz high-frequency generator SA5205AD ZD 103 ma schematics power supply satellite receiver tv schematic diagram PHILIPS ZD 103 operational amplifier discrete schematic
Text: = 7V VCC = 5V ZO = 50 TA = 25oC 2 4 6 8 102 2 FREQUENCY-MHz 4 6 8 103 , 30 25 ZO = 50 TA = 25oC 20 15 10 101 2 4 6 8 102 2 4 6 8 103 , ZO = 50 1.1 1.0 101 ­30 2 4 6 8 102 2 4 6 8 103 101 2 4 6 , RETURN LOSS-dB OUTPUT RETURN LOSS-dB 4 6 8 103 40 35 30 OUTPUT 25 VCC = 6V ZO = 50 , 20dB insertion gain · 4.8dB (6dB) noise figure ZO =75 ( ZO =50) · No external components required ·


Original
PDF SA5205A SA5205A SA5205 24mAoration ZO 103 zo 103 ma 2 way antenna splitter, circuit diagram 100MHz high-frequency generator SA5205AD ZD 103 ma schematics power supply satellite receiver tv schematic diagram PHILIPS ZD 103 operational amplifier discrete schematic
1985 - 100MHz high-frequency generator

Abstract: NE5205AD SA5205AN NE5205AN SE5205AN SE5205A ZD 103 SA5205AD ZD 103 ma antenna amplifiers
Text: 4 6 6 8 103 SR00218 VCC = 7V VCC = 5V ZO = 50 TA = 25oC 2 4 6 8 102 2 , SR00223 ZO = 50 TA = 25oC 15 10 5 8 103 Figure 6. Insertion Gain vs Frequency (S21 , LOSS-dB 4 6 8 103 40 35 30 OUTPUT 25 VCC = 6V ZO = 50 TA = 25oC 20 INPUT 15 35 30 2 4 6 8 102 2 4 6 8 103 OUTPUT 25 20 INPUT VCC = 6V ZO = 75 , Configuration FEATURES · 600MHz bandwidth · 20dB insertion gain · 4.8dB (6dB) noise figure ZO =75 ( ZO


Original
PDF NE/SA/SE5205A NE/SA/SE5205A NE/SA/SE5205 450MHz, 100MHz high-frequency generator NE5205AD SA5205AN NE5205AN SE5205AN SE5205A ZD 103 SA5205AD ZD 103 ma antenna amplifiers
1985 - ZO 103

Abstract: High-Frequency Wideband Power Transformers zo 103 ma ZD 103 ZD 103 ma tv schematic diagram PHILIPS 8505a operational amplifier discrete schematic SA5204 SA5204AD
Text: THIRD­ORDER INTERCEPT-dBm OUTPUT LEVEL-dBm 8 103 VCC = 7V VCC = 6V VCC = 8V VCC = 5V ZO = 50 TA = 25oC 101 2 20 6 8 102 2 4 6 8 103 ZO = 50 TA = 25oC 15 10 , ZO = 50 1.1 ­30 101 1.0 101 2 4 6 8 102 2 4 6 8 103 2 4 6 8 102 , 101 6 8 103 a. Input VSWR vs Frequency ZO = 50 2 4 6 8 102 2 FREQUENCY-MHz 4 , insertion gain · 4.8dB (6dB) noise figure ZO =75 ( ZO =50) · No external components required · Input and


Original
PDF SA5204A SA5204A SA5204 SA5205. 350MHz ZO 103 High-Frequency Wideband Power Transformers zo 103 ma ZD 103 ZD 103 ma tv schematic diagram PHILIPS 8505a operational amplifier discrete schematic SA5204 SA5204AD
1985 - NE5204AN

Abstract: NE5204A NE5204AD NE5205 SA5204AD SA5204AN zo 103 ma
Text: VCC = 8V ZO = 50 10 10 101 2 4 6 8 102 2 4 6 101 8 103 2 4 6 , 102 ­15 ZO = 50 TA = 25oC VCC = 6V ­20 ­25 2 4 ­30 6 8 103 101 2 4 , 6 8 103 b. Insertion Gain vs Frequency (S21) 10 10 ZO = 50 TA = 25oC VCC = 6V , INPUT VCC = 6V ZO = 75 TA = 25oC 15 10 6 8 103 101 2 4 6 8 102 2 4 6 , 1.1 4 6 8 102 2 FREQUENCY-MHz 4 1.0 101 6 8 103 ZO = 50 2 4 6 8 102 2


Original
PDF NE/SA5204A NE/SA5204A NE/SA5204 200MHz. 350MHz. NE5204AN NE5204A NE5204AD NE5205 SA5204AD SA5204AN zo 103 ma
1997 - ZO 103 MA 75 505

Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 ATF 136
Text: Scattering Parameters, Common Source, Zo = 50 , VDS = 2 V, IDS = 10 mA Freq. S11 S21 (GHz) Mag. Ang. dB , ATF-21186 Typical Noise Parameters, Common Source, Zo = 50 , VDS = 2 V, ID = 15 mA Frequency GHz , -21186 Typical Scattering Parameters, Common Source, Zo = 50 , VDS = 2 V, IDS = 20 mA Freq. S11 S21 (GHz , , Common Source, Zo = 50 , VDS = 2 V, ID = 20 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 , Source, Zo = 50 , VDS = 3 V, IDS = 70 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 0.933


Original
PDF ATF-21186 ATF-21186 5091-4862E 5965-8716E ZO 103 MA 75 505 ATF-21186-STR ATF-21186-TR1 ATF 136
1985 - NE5204AN

Abstract: ne5204 ZD 103 ma ZD 103 NE5204AD ne5205 SA5204AD SA5204AN RF1140 100MHz high-frequency generator
Text: THIRD­ORDER INTERCEPT-dBm OUTPUT LEVEL-dBm 8 103 VCC = 7V VCC = 6V VCC = 8V VCC = 5V ZO = 50 TA = 25oC 101 2 20 6 8 102 2 4 6 8 103 ZO = 50 TA = 25oC 15 10 , 1.2 ZO = 50 1.1 ­30 101 1.0 101 2 4 6 8 102 2 4 6 8 103 2 4 6 8 , 101 6 8 103 a. Input VSWR vs Frequency ZO = 50 2 4 6 8 102 2 FREQUENCY-MHz 4 , monolithic chip. 200 MHz, ±0.5dB 350 MHz, -3dB · 20dB insertion gain · 4.8dB (6dB) noise figure ZO


Original
PDF NE/SA5204A NE/SA5204A NE/SA5204 NE5204AN ne5204 ZD 103 ma ZD 103 NE5204AD ne5205 SA5204AD SA5204AN RF1140 100MHz high-frequency generator
2005 - HIGH POWER ANTENNA SWITCH PIN DIODE

Abstract: UM9401B um9401sm UM9415 UM9401 UM9415b zo 103 ma UM9402 UM9401 equivalent "antenna switch"
Text: 10 10 uA Series Resistance Capacitance Parallel Resistance RS CT RP If = 50 mA , F , Carrier Lifetime IF = 10 mA 2.0 If = 50 mA Pin = 50 W f = 50 MHz, If = 50 mA Pin = 10 W, 0 , 60 Rs versus If TYPICAL 103 f = 100 MHz 102 Rs (Ohms) UM9401/UM9402 UM9415 101 0 10 10-5 10-4 10-3 10-2 10-1 ELECTRICALS ELECTRICALS 10-1 100 If (A , COMMERCIAL TWO-WAY RADIO ANTENNA SWITCH DIODES WWW . Microsemi .C OM Rp versus f TYPICAL 103 Rp


Original
PDF UM9401 UM9402 UM9415 UM9415 HIGH POWER ANTENNA SWITCH PIN DIODE UM9401B um9401sm UM9415b zo 103 ma UM9401 equivalent "antenna switch"
2003 - Not Available

Abstract: No abstract text available
Text: Semiconductor Corporation FIN1049 · Rev. 1.0.3 www.fairchildsemi.com FIN1049 - LVDS Dual-Line Driver , left open. © 2003 Fairchild Semiconductor Corporation FIN1049 · Rev. 1.0.3 www.fairchildsemi.com , -65 Max. +4.6 +4.6 +4.6 +150 +150 +260 7000 250 Unit V V V mA °C °C °C V Recommended , FIN1049 · Rev. 1.0.3 www.fairchildsemi.com 3 FIN1049 - LVDS Dual-Line Driver with Dual-Line , , VIN=0 V or 2.8 V 2.0 GND VIN=0 V or VCC VIK=-18 mA See Figure 4 RL=100 Driver Enabled See Figure 4


Original
PDF FIN1049 TIA/EIA-644-A 16-pin FIN1049
8B103

Abstract: SA5205AD DN300 operational amplifier discrete schematic SA5205AN SE5205A NE5205AN NE5205AD zo 103 ma schematics c band power supply satellite receiver
Text: . 7511 J = Zo - 2 4 6 s102 2 4 6 6 103 , stability. FEATURES • 600MHz bandwidth • 20dB insertion gain • 4.8dB (6dB) noise figure ZO =75Q (Z0 , Icc Supply current Over temperature 20 19 25 25 32 33 20 19 25 25 32 33 mA mA S21 Insertion gain f , Current vs Supply Voltage 9 20 P 15 10 . Zq i son TA = 25°C - vcc.5v 101 2 4 6 8 ,„2 2 4 8 8 103 FREQUENCY—MHz Figure 3. Insertion Gain vs Frequency (S;i) 101 2 4 S > 102 2 4 6 8 103 FREQUENCY—MHz Figure


OCR Scan
PDF NE/SA/SE5205A NE/SA/SE5205A NE/SA/SE5205 450MHz, 600MHz 7110fl2b 8B103 SA5205AD DN300 operational amplifier discrete schematic SA5205AN SE5205A NE5205AN NE5205AD zo 103 ma schematics c band power supply satellite receiver
2004 - Transistor TT 2246

Abstract: TT 2246 transistor
Text: -36163 Typical Parameters TC = 25° C, ZO = 50 , Vds = 2 V, Ids = 15 mA , (unless otherwise noted). Symbol Fmin Ga , ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. GHz , : 1. Gmax = MAG for K > 1 and Gmax = MSG for K 1. Common Source, ZO = 50 , VDS = 1.5 V, ID = 15 mA , Source, ZO = 50 , VDS = 2.0 V, ID = 10 mA opt Freq. Fmin Ga GHz dB dB Mag. Ang. 2 0.46 18.60 0.84 28 3 , , ID = 10 mA . 6 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 2 V, ID


Original
PDF ATF-36163 OT-363 SC-70) ATF-3610025 5965-4747E 5989-1915EN Transistor TT 2246 TT 2246 transistor
1999 - Hitachi DSA002756

Abstract: 2sc5246
Text: 5 mA , ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.793 0.702 , mA , ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.764 0.651 0.545 , . ­13.7 ­24.8 ­31.9 ­36.7 ­39.2 ­41.3 ­43.1 ­44.8 ­46.5 ­47.8 S Parameter (VCE = 1 V, IC = 10 mA , ZO = , VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 80 150 ­55 to +150 Unit V V V mA mW °C °C Attention , - - 100 0.3 12 16.5 1.6 Max 10 1 10 160 0.8 - - 2.5 pF GHz dB dB Unit µA mA µA Test conditions


Original
PDF 2SC5246 ADE-208-264 Hitachi DSA002756 2sc5246
max 1788

Abstract: A1081 smoke 939 A1081-5
Text: 2000 0.314 73.5 1.511 - 10.3 0.311 7.7 0.380 -117.5 VCE=2V, IC=10mA, ZO , -55 to +150 Tstg mA °C PC Tj Storage Temperature V 100 Electrical , 5V 40 Collector Current, IC - mA Collector Current, IC - mA 0.35mA IC - VBE 100 , 5 7 10 2 3 5 7 100 Collector Current, IC - mA 2 3 2 1.0 3 Reverse , 10 3 Collector Current, IC - mA 5 7 100 IT13399 PC - Ta 500 Collector


Original
PDF 2SC5414A ENA1081 S21e2 A1081-6/6 max 1788 A1081 smoke 939 A1081-5
1997 - zo 107 MA

Abstract: zo 107 MSA-1104 zo 103 ma HP MMIC 101 MSA-1104 amplifier
Text: Conditions: Id = 60 mA , ZO = 50 Power Gain (|S21 | 2) GP Gain Flatness f3 dB f = 0.05 GHz f , to 70 mA . Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P). 3 MSA-1104 Typical Scattering Parameters ( ZO = 50 , TA = 25°C, Id = 60 mA , 1.0 GHz 10 60 ZO = 75 8 Gp (dB) 10 Id ( mA ) G p (dB) 12 14 TC = +85°C , Ratings Absolute Maximum[1] 80 mA 550 mW +1 dBm 150°C ­65 to 150°C Parameter Device Current


Original
PDF MSA-1104 MSA-1104 5965-9556E zo 107 MA zo 107 zo 103 ma HP MMIC 101 MSA-1104 amplifier
2008 - sanyo 103 591

Abstract: 2SC5414
Text: Collector-to-Emitter Voltage VCEO VEBO 12 V Collector Current IC 100 mA Emitter-to-Base , -1023 No.5910­1/6 2SC5414 I C - VCE 50 I C - VBE 100 0.35mA Collector Current, IC ­ mA Collector Current, IC ­ mA 0.30mA 40 0.25mA 0.20mA 30 0.15mA 20 0.10mA 10 0.05mA , 2 5 7 10 3 S21e - IC 12 VCE =5V 2 3 Collector Current, IC ­ mA 5 7 , Collector-to-Base Voltage, VCB - V 10 0 2V 10 5 2 1.2 Collector Current, IC ­ mA f =


Original
PDF ENN5910 2SC5414 2004B 2SC5414] sanyo 103 591 2SC5414
2009 - A1081

Abstract: No abstract text available
Text: 1.511 - 10.3 0.311 7.7 0.380 -117.5 VCE=2V, IC=10mA, ZO =50 Freq(MHz) S11 S11 , Ratings Unit VCBO VCEO 20 V 12 V VEBO IC 2 100 mA PC Tj 400 mW , 0.30mA 40 Collector Current, IC - mA Collector Current, IC - mA 0.35mA 0.25mA 0.20mA , Current, IC - mA 2 3 2 1.0 3 Reverse Transfer Capacitance, Cre - pF 5 3 2 1.0 , , IC - mA 5 7 100 IT13399 PC - Ta 500 Collector Dissipation, PC - mW 2 10


Original
PDF 2SC5414A ENA1081 S21e2 A1081-6/6 A1081
2005 - marking CODE GA sot363

Abstract: atf 36163 Low Noise Amplifier Transistor TT 2246 SOT 363 marking code 62 low noise GM 2310 A marking 34 sot-363 rf ATF-36163-BLKG MGA-86563 ATF-36163 A004R
Text: tuned for a typical device. ATF-36163 Typical Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA , Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 , Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA 20 1.6 ATF-36163 Typical Noise Parameters 24 2.0 , V, ID = 10 mA . ATF-36163 fig 2 ATF-36163 Typical Scattering Parameters, Common Source, ZO = , ATF-36163 fig 3 20 16 GAIN (dB) Common Source, ZO = 50 , VDS = 1.5 V, ID = 15 mA 20 1.6


Original
PDF ATF-36163 ATF-36163 OT-363 5989-1915EN AV02-1441EN marking CODE GA sot363 atf 36163 Low Noise Amplifier Transistor TT 2246 SOT 363 marking code 62 low noise GM 2310 A marking 34 sot-363 rf ATF-36163-BLKG MGA-86563 A004R
2SC5246

Abstract: No abstract text available
Text: ­90° Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA ) (I C = 10 mA ) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA ) (I C = 10 mA ) S12 , ­120° ­90° Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA ) (I C = 10 mA ) ­2 ­.6 ­.8 ­1 ­1.5 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz , step) (I C = 5 mA ) (I C = 10 mA ) Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step


Original
PDF D-85622 2SC5246
2000 - 2SC5414

Abstract: TA-102
Text: Collector-to-Emitter Voltage VCEO VEBO 12 V Collector Current IC 100 mA Collector Dissipation , -1023 No.5910­1/6 2SC5414 I C - VCE 50 I C - VBE 100 0.35mA Collector Current, IC ­ mA Collector Current, IC ­ mA 0.30mA 40 0.25mA 0.20mA 30 0.15mA 20 0.10mA 10 0.05mA , - IC VCE =5V 2 3 Collector Current, IC ­ mA 5 7 100 f = 1GHz 10 2V 2 , 1.2 Collector Current, IC ­ mA f = 1MHz 2 1.0 VCE =5V 5 1.0 1.0 3 Cob - VCB


Original
PDF ENN5910 2SC5414 2004B 2SC5414] 2SC5414 TA-102
2006 - Transistor TT 2246

Abstract: A004R ATF-36163 ATF-36163-BLK ATF-36163-TR1
Text: TC = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA , (unless otherwise noted). Symbol Parameters and Test , -36163 Typical Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA , (unless otherwise noted). Symbol Fmin , Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA S11 Mag. 0.99 0.98 0.96 0.93 , (dB) Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA opt Freq. Fmin Ga GHz dB dB Mag , 10 mA . 4 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID =


Original
PDF ATF-36163 ATF-36163 OT-363 SC-70) 5965-4747E 5989-1915EN Transistor TT 2246 A004R ATF-36163-BLK ATF-36163-TR1
1997 - Transistor TT 2246

Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
Text: Specifications TC = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA , (unless otherwise noted). Symbol NF G gm Idss , Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA , (unless otherwise noted). Symbol Fmin Ga , , Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA S11 Mag. 0.99 0.98 0.96 0.93 0.87 0.81 0.75 , ) Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. Fmin Ga opt GHz dB dB Mag. Ang. 2 0.48 , . 5-81 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 15 mA S11


Original
PDF ATF-36163 OT-363 SC-70) Transistor TT 2246 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
1999 - Transistor TT 2246

Abstract: 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1
Text: TC = 25°C, ZO = 50 , Vds = 1.5 V, Ids = 10 mA , (unless otherwise noted). Symbol Parameters and Test , -36163 Typical Parameters TC = 25°C, ZO = 50 , Vds = 2 V, Ids = 15 mA , (unless otherwise noted). Symbol Fmin , Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA S11 Mag. 0.99 0.98 0.96 0.93 , (dB) Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA Freq. Fmin Ga opt GHz dB dB Mag. Ang , 10 mA . 4 ATF-36163 Typical Scattering Parameters, Common Source, ZO = 50 , VDS = 1.5 V, ID =


Original
PDF ATF-36163 OT-363 SC-70) 5965-4747E Transistor TT 2246 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1
1999 - zo 103 ma

Abstract: 2SC5246 DSA003641
Text: V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA ) (I C = 10 mA ) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA ) (I C = 10 mA ) S12 Parameter vs. Frequency , Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA ) (I C = 10 mA ) ­2 ­.6 ­.8 ­1 ­1.5 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA , C = 5 mA ) (I C = 10 mA ) Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C =


Original
PDF 2SC5246 ADE-208-264 zo 103 ma 2SC5246 DSA003641
1999 - MSA-1104

Abstract: MSA-1104 amplifier
Text: Test Conditions: Id = 60 mA , ZO = 50 Power Gain (|S21 | 2) GP Gain Flatness f3 dB f = , to 70 mA . Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P). 3 MSA-1104 Typical Scattering Parameters ( ZO = 50 , TA = 25°C, Id = 60 mA , 1.0 GHz 10 60 ZO = 75 8 Gp (dB) 10 Id ( mA ) G p (dB) 12 14 TC = +85°C , MSA-1104 Absolute Maximum Ratings Absolute Maximum[1] 80 mA 550 mW +1 dBm 150°C ­65 to 150


Original
PDF MSA-1104 MSA-1104 5965-9556E MSA-1104 amplifier
1997 - MSA-1104

Abstract: MSA-1104 amplifier zo 107 MA zo 107
Text: ], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 60 mA , ZO = 50 Power Gain (|S21| 2 , ( ZO = 50 , TA = 25°C, Id = 60 mA ) S11 Freq. GHz S21 S12 S22 Mag dB Mag Ang , ] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 550 mW +1 , current range for this device is 40 to 70 mA . Typical performance as a function of current is on the , 1.05 1.04 1.03 1.03 0.99 0.99 1.02 1.05 A model for this device is available in the DEVICE


Original
PDF MSA-1104 MSA-1104 MSA-1104 amplifier zo 107 MA zo 107
2005 - 2.F 1 marking

Abstract: mmic marking A mmic marking L transistor D 2394 MSA-2111 MSA-2111-BLK MSA-2111-TR1 msa 89
Text: Parameters and Test Conditions: Id = 29 mA , ZO = 50 (|S 21| 2) GP Power Gain GP Gain Flatness , -2111 Typical Scattering Parameters ( ZO = 50 , TA = 25°C, Id = 29 mA ) S11 S21 S12 S22 Freq. GHz , Maximum Ratings Absolute Maximum[1] 40 mA 125 mW +13 dBm 150°C ­65°C to 150°C Parameter Device , . The recommended operating current range for this device is 12 to 35 mA . Typical gain performance as a , 1.03 1.03 1.03 1.03 1.03 1.03 1.04 1.04 1.04 1.05 1.06 1.08 1.10 1.13 1.14 1.14


Original
PDF MSA-2111 MSA-2111 OT-143 5965-9663E 5989-2759EN 2.F 1 marking mmic marking A mmic marking L transistor D 2394 MSA-2111-BLK MSA-2111-TR1 msa 89
Supplyframe Tracking Pixel