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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

zener diode a24 Datasheets Context Search

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zener diode a24

Abstract: ZENER A24
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Zener Diodes MAZ8xxx Series , • Extremely low noise voltage caused from the diode (2.4 V to 39V, 1/3 to 1/10 of our , €¢ Easy-to-select the optimum diode because of their finely divided zener-voltage ranks • Guaranteed reliability , Characteristics Ta = 25°C ± 3°C *1 Parameter Forward voltage Zener voltage *2 an Zener rise operating resistance int Reverse current en Zener operating resistance Ma Temperature


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PDF 2002/95/EC) MA8000 SC-76 MAZ8082: zener diode a24 ZENER A24
2004 - zener diode a24

Abstract: No abstract text available
Text: Zener Diodes MAZ8000 Series (MA8000 Series) Silicon planar type 1.25±0.1 0.7±0.1 Unit , caused from the diode (2.4 V to 39 V, 1/3 to 1/10 of our conventional MAZ3000 series) • Extremely good rising performance (in the low-current range) • Easy-to-select the optimum diode because of , °C *1 Parameter Forward voltage Zener voltage *2 Symbol Conditions VF IF = 10 mA Min Typ Max Unit 0.9 1.0 V VZ IZ Specified value V Zener knee


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PDF MAZ8000 MA8000 MAZ3000 zener diode a24
transistor a110

Abstract: zener diode a24 SA406B transistor a200 latching RELAY 4PDT 12V SY4S-05D SY4S-05A Varistor RU RU coil DC 12v BNL6PN10
Text: ) With diode (DC coil only) Reverse polarity coil RU42S-R- RU42S-D- A24 , A100, A110, A200, A220 , release time, connect a Zener diode between the collector and emitter of the transistor. Select a Zener diode with a Zener voltage slightly higher than the power voltage. Counter emf suppressing diode + , RU2S- RU4S- With RC (AC coil only) With diode (DC coil only) With diode (DC coil only) Reverse polarity coil RU2S-R- RU2S-D- RU4S-R- RU4S-D- RU2S-D1- RU4S-D1- A24 , A100, A110, A200


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PDF D-20537 EP1037-1 transistor a110 zener diode a24 SA406B transistor a200 latching RELAY 4PDT 12V SY4S-05D SY4S-05A Varistor RU RU coil DC 12v BNL6PN10
transistor a110

Abstract: ZENER A24 LR35144 RU coil DC 12v A220 relay 240v 10a pcb zener diode a24 latching RELAY 4PDT 12V ZENER DIODE 6A CAPACITY D110
Text: - RU42S-MR- A110, A220 With diode (DC coil only) 4PDT Bifurcated (3A) RU4V-NF- A24 , A110, A220 , release time, connect a Zener diode between the collector and emitter of the transistor. Select a Zener diode with a Zener voltage slightly higher than the power voltage. Terminal Blocks R C Power , (Standard Stock in bold) With Momentary Lever Standard A24 , A110, A220 D6, D12, D24, D48, D110 , RU2V-NF- - - A24 , A110, A220 D6, D12, D24, D48, D110 Standard RU4S-C- RU4S- RU4S-M


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PDF UL508 E66043 800-262-IDEC 888-317-IDEC transistor a110 ZENER A24 LR35144 RU coil DC 12v A220 relay 240v 10a pcb zener diode a24 latching RELAY 4PDT 12V ZENER DIODE 6A CAPACITY D110
Not Available

Abstract: No abstract text available
Text: print heads. A Zener diode is used to increase the flyback voltage, providing a much faster inductive , performance. The maximum Zener voltage, plus the load supply voltage, plus the flyback diode forward voltage , internal flyback/clamp diode for switching inductive leads. They feature a minimum breakdown and , —2.4 V ^ — 0.9 1.0 V l0UT = 1 0 A, VlN = VE = 2 .4 V N — 1.0 1.2 , Open V in * = VE = 0.8 V, Vcc = 5.0 V N Clamp Diode Leakage Current vF lF = 1.0A lF =


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PDF UDN2540B WP-001
2013 - WRA-YQD-20W

Abstract: DC/DC Converters microdc
Text: Protection type : Shut off o/p voltage, clamping by zener diode Short Circuit Protection type , ±15 ±667 80 WRA1224YQD-20W 9~18 ±24 ±417 83 WRA2405YQD-20W 18~36  , WRA2415YQD-20W 18~36 ±15 ±667 83 WRA2424YQD-20W 18~36 ±24 ±417 78 , WRA4824YQD-20W 36~72 ±24 ±417 78 WRB1205YQD-20W 9~18 5 4000 79 WRB1212YQD


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PDF WRA-YQD-20 WRB-YQD-20W WRA1215YQD-20W WRA1224YQD-20W WRA2405YQD-20W WRA2412YQD-20W capacitance1000pF WRA2415YQD-20W WRA2424YQD-20W WRA-YQD-20W DC/DC Converters microdc
2003 - Not Available

Abstract: No abstract text available
Text: GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the , Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating , ( ) Pulse width limited by safe operating area (1) ISD ≤2.4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj â


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PDF STP3NK60Z STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 O-220/FP/D2PAK/DPAK/IPAK STP3NK60Z STB3NK60Z STD3NK60Z STD3NK60Z-1
2013 - a39 zener diode

Abstract: No abstract text available
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications , : mm Average power dissipation: P = 0.7 W Zener voltage: VZ = 6.2~47 V Suitable for compact , (Ta = 25°C) Zener Impedance Zener Voltage Product No. VZ (V) Measurement Current IZ , Measurement Current IZ (mA) Temperature Coefficient of Zener Voltage αT (mV / °C) Forward , –¡13 CRZ13 □15 CRZ15 □16 CRZ16 □18 CRZ18 □20 CRZ20 □22 CRZ22 □24


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PDF CRY62 CRZ47 a39 zener diode
2002 - p3nk60z

Abstract: P3NK60ZFP b3nk60z d3nk60z STD3NK60ZT4
Text: Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ GATE-SOURCE ZENER DIODE , Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (1) Peak Diode Recovery , limi ted by safe operating area (1) ISD ≤2.4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX , ) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD


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PDF STP3NK60Z STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 O-220/FP/D2PAK/DPAK/IPAK STP3NK60Z STB3NK60Z STD3NK60Z STD3NK60Z-1 p3nk60z P3NK60ZFP b3nk60z d3nk60z STD3NK60ZT4
2003 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE (DO-34) DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode ) construction , . FEATURES • DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch , €¢ DHD (Double Heatsink Diode ) construction • VZ Applied E24 standard ORDERING INFORMATION RD2


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TEA5500

Abstract: PJ 986 R/pj 989 diode iclock 990 16-LEAD E9H diode DIODE AM MODULATOR TEA5500T IEC134 ZENER DIODE E1
Text: 4.5 V 'P 1.8 2.5 3.2 mA Zener diode voltage across supply note 1 vz - - 8 V Inputs E1 to E10 , supply characteristics 1. Maximum Zener diode current 10 mA. October 1990 989 ■I 711065L. DIII7T31S , transistor which drives (e.g.) an infrared radiation emitting diode . After every start the encoder completes three coding runs then stops automatically. Decoding In decoding mode an infrared sensitive diode (e.g , internal coding A B f -1 Û23 Û24 Û1 P2 O3 O4 iTinnririnnnjinr recognition code MlAltS- 1


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PDF TEA5500 TEA5500T IBC558 BC327 TEA5551 TEA5591 PJ 986 R/pj 989 diode iclock 990 16-LEAD E9H diode DIODE AM MODULATOR TEA5500T IEC134 ZENER DIODE E1
BPW50

Abstract: coy89a TEA5500 BC327 TEA5500T E9 amplifier E9 amplifier 16 pin zener diode E7
Text: voltage (pin 16) vP 3 4.5 6.5 V Supply current Vp = 4.5 V 'p 1.8 2.5 3.2 mA Zener diode voltage across , €” mA Voltage at output V0 — — 16 V Note to the supply characteristics 1. Maximum Zener diode , emitting diode . After every start the encoder completes three coding runs then stops automatically. Decoding In decoding mode an infrared sensitive diode (e.g.) is connected to the data input via an , Uli 923 °24 Qi 02 Qa Q4 innnr [onnnnnr recognition code M LA 195-1 encoding E1 E2


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PDF TEA5500 TEA5500T TEA5500 BC327 COY89A 7Z81692 BPW50 TEA5500T BPW50 coy89a BC327 E9 amplifier E9 amplifier 16 pin zener diode E7
Not Available

Abstract: No abstract text available
Text: and the mounting cost. Zener Voltage correspond to £24 Series. Ü5 r<> oo +i © t~t , €” 1-2V1B ELECTRICAL CHARACTERISTICS fTa = 25°C) CHARACTERISTIC Zener Voltage Dynamic Impedance , Iz - Vz Ta = 2i °C 10 ZENER CURRENT ¡z (mA> 100 1 0.1 0.01 0.001 5 7 9 11 13 ZENER VOLTAGE VZ (V) 15 FORWARD VOLTAGE VF (V) 1999-03-25 TGITHSO 0D3b3bM


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AS4040B-3

Abstract: AS4040-2 AS4040 LM4040 Design with PIN diode alpha AS4040B-2
Text: ALPHA SEMICONDUCTOR Excellence in Analog Power Products AS4040 Precision Micropower 2.5V Shunt Voltage Reference FEATURES • Low temperature coefficient 100 ppm/°C • Operating current range 100(iA to 15 mA • Low power, 250 mW @ Iin=100 mA • Two terminal " Zener " operation • Small , 5.000 5.000 V Reverse Breakdown tolerance IR=500 |i/\ ±24 ±58 ±24 ±58 ±24 ±58 mV mV , Regulator Application SOT-23 The AS4040 in the SOT-23 package has a parasitic Schottky diode between pin 3


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PDF AS4040 LM4040 AS4040 two-t018 AS4040B-3 AS4040-2 LM4040 Design with PIN diode alpha AS4040B-2
Not Available

Abstract: No abstract text available
Text: Zener Voltage correspond to £24 Series. 1.2510.1 % o o O IS * e- EE oo + I o , TEST CONDITION Iz = 5 mA Iz — 5 mA IZ = 0.5 mA w5 II en Zener Voltage , ZENER CURRENT Iz


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PDF
2001 - Not Available

Abstract: No abstract text available
Text: €“1.8 V • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model , €“ Pulsed (Note 2) (Note 1) Operating and Storage Junction Temperature Range –2.4 0.3 W â , 260 330 450 400 500 mΩ mΩ Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.25 A VSD Drain–Source Diode Forward Voltage –1.2 V VON/OFF = 0 V, IS = –0.25 A(Note 2) Notes: 1. RθJA


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PDF FDG6331L SC70-6
Not Available

Abstract: No abstract text available
Text: With derating above 55ºC Units 140 110 47 110 Zener diode clamp Hiccup mode, indefinite , -15DMAZ 90-264/47-440 120-370 ±15 ±1 83 AME30-24DMAZ 90-260/47-440 120-370 ±24 ±0.625 82 NOTE: All


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PDF AME30-MAZ 4000VAC 90-260VAC, 47-440Hz, 120-370VDC AME30-3 AME30-5SMAZ AME30-12SMAZ AME30-15SMAZ AME30-24SMAZ
Not Available

Abstract: No abstract text available
Text: With derating above 55ºC Units 140 110 47 110 Zener diode clamp Hiccup mode, indefinite , -15DMAZ 90-264/47-440 120-370 ±15 ±1 83 AMEC30-24DMAZ 90-264/47-440 120-370 ±24 ±0.625 82 NOTE


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PDF AMEC30-MAZ 4000VAC 90-260VAC, 47-440Hz, 120-370VDC AMEC30-3 AMEC30-5SMAZ AMEC30-12SMAZ AMEC30-15SMAZ AMEC30-24SMAZ
Not Available

Abstract: No abstract text available
Text: 47 110 Zener diode clamp Hiccup mode, indefinite Auto recovery -40 - +85 KHz % % o , ) Output Current max (A) ±5 ±12 ±15 ±24 ±4 ±1.66 ±1.33 ±0.835 Efficiency (%) 80


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PDF AME40-MAZ 4000VAC 90-260VAC, 47-440Hz, 120-370VDC AME40-3 AME40-5SMAZ AME40-12SMAZ AME40-15SMAZ AME40-24SMAZ
2002 - MAZ31500

Abstract: No abstract text available
Text: Zener Diodes MAZ3000 Series (MA3000 Series) Silicon planar type Unit: mm 0.40+0.10 â , Forward voltage VF IF = 10 mA Zener voltage *2 VZ IZ Specified value V Zener knee operating resistance RZK IZ Specified value Ω Zener operating resistance RZ IZ , Temperature coefficient of zener voltage *3 SZ IZ Specified value mV/°C Terminal capacitance , ) Zener voltage Reverse current Part number MAZ3020 MAZ3022 MAZ3024 MAZ3027 MAZ30270L


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PDF MAZ3000 MA3000 MAZ31500
2001 - Not Available

Abstract: No abstract text available
Text: Zener Diodes MAZ3000 Series (MA3000 Series) Silicon planar type Unit : mm + 0.2 2.8 â , int Zener voltage*2 an Parameter Forward voltage Operating resistance Symbol VF VZ , zener voltage*3 SZ IZ ·················· Specified value mV/°C Terminal , °C Note) The part number in the parenthesis shows conventional part number. 394 Zener Diodes , = 5 mA) Zener voltage Temperature coefficient of zener voltage Operating resistance


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PDF MAZ3000 MA3000
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Zener Diodes MAZ3xxx Series , performance • Wide voltage range: Zener voltage VZ = 2.0 V to 36.0 V 2.8+0.2 –0.3 M Di ain sc te , Parameter en int Zener voltage *2 an Forward voltage Ma Zener rise operating resistance Zener operating resistance Reverse current Symbol Conditions Min Typ Max Unit 0.8 , Temperature coefficient of zener voltage *3 SZ IZ Specified value Terminal capacitance Ct VR


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PDF 2002/95/EC) SC-59
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Zener Diodes MAZ4xxx Series , zener-voltage rank • Sharp rising performance • Wide voltage range: Zener voltage VZ = 2.0 V to 39.0 V , Zener voltage *2 an Zener rise operating resistance Ma int Reverse current en Zener operating resistance Temperature coefficient of zener voltage *3 Terminal capacitance Symbol , – Electrical Characteristics within Part Numbers Ta = 25°C ± 3°C • VZ = 2.0 V to 6.8 V (IZ = 5 mA) Zener


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PDF 2002/95/EC) DO-34-A2
2007 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Zener Diodes MAZSxxxG Series , voltage Zener voltage *2 an Reverse current ce /D isc on tin ue ■Common Electrical Characteristics Ta = 25°C±3°C *1 en Zener rise operating resistance int Zener operating resistance Ma Temperature coefficient of zener voltage *3 Symbol Conditions VF IF = 10 mA VZ , 8.70 8.17 5 0.1 5.0 8.43 8.70 9.60 9.02 5 0.1 6.0 9.33 9.60 Zener voltage Part Number


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PDF 2002/95/EC)
2004 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING (Unit: mm) DESCRIPTION These products are zener diodes with an allowable φ 0.5 25 MIN. dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode ) structure. 4.2 MAX. FEATURES Cathode indication • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for


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