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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

zener diode 332 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - w11nk100z

Abstract: zener diode 332 STW11NK100Z stw11nk Zener diode 83a sound Processor acp 2371 marking Dt
Text: = 25 °C, ID = IAR, VDD = 50 V) 550 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter , (pulsed) 33.2 A IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Total Dissipation at TC = 25 , 4.5 V/ns -55 to 150 °C Peak Diode Recovery voltage slope Operating Junction Temperature , V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have , the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect


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PDF STW11NK100Z O-247 w11nk100z zener diode 332 STW11NK100Z stw11nk Zener diode 83a sound Processor acp 2371 marking Dt
TRANSISTOR REPLACEMENT GUIDE

Abstract: zener diode cross reference transistor cross reference NTE142A Germanium DO-35 DIODE EL01-012 NTE778A Japanese Transistor Cross References NTE145A germanium rectifier diode
Text: IC-Low-Power Dual Operational Amplifier, 3-32 V, 50 mA IC-Quad Low-Power Op-Amp, 3-32 V, 50 mA Dual , 935-6428 935-2055 935-2519 109 525 506 519 General Purpose Germanium Diode , Fast Switch Silicon Diode , High Voltage, Fast Recovery Switch Silicon Rectifier Diode , Fast Recovery, Blanking Silicon Rectifier Diode , Ultrafast Switch Germ Si Si Si 100 2000 1400 100 0.06 0.50 2.00 0.30 , 1.81 3.28 1.86 .52 Zener Diodes Glass Case 59-03 (D0-41) DO-35 Datasheet Online


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PDF NTE834 NTE922M NTE943M D0-41) DO-35 NTE5013A NTE135A NTE137A NTE5071A NTE5072A TRANSISTOR REPLACEMENT GUIDE zener diode cross reference transistor cross reference NTE142A Germanium DO-35 DIODE EL01-012 NTE778A Japanese Transistor Cross References NTE145A germanium rectifier diode
2003 - HZU30L-1

Abstract: Zener Diode B1 zener diode 332
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage and low zener impedance. · Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. · Ultra small Resin Package (URP) is suitable for surface , Tstg ­55 to +150 °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* Reverse


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PDF REJ03G0043-0200Z HZU30L-1 Zener Diode B1 zener diode 332
2003 - HZU-L Series

Abstract: zener mark code A2 zener diode marking 333 361 Zener diode marking zener diode 332
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0100Z Rev.1.00 Jun.05.2003 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage and low zener impedance. · Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. · Ultra small Resin Package (URP) is suitable for surface , Tstg ­55 to +150 °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* Reverse


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PDF REJ03G0043-0100Z HZU-L Series zener mark code A2 zener diode marking 333 361 Zener diode marking zener diode 332
2004 - marking A3 Taiwan semiconductor

Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features · · · · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Ultra small Resin Package (URP) is suitable for surface , to +150 °C °C Electrical Characteristics (Ta = 25°C) Zener Voltage 1 VZ (V)* Type


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PDF REJ03G0043-0300Z marking A3 Taiwan semiconductor B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
2010 - 4.7uF 25V X7R

Abstract: MBR0530T1G LM3410XSD AN1996 RESISTOR footprint LM3410 TSW-102-07-T-S CRCW0603100RFKEA ,4.7uF 25V X7R XPEWHT-L1
Text: C3225X7R1E475K D1, Catch Diode 0.4Vf Schottky, 500mA ON Semiconductor MBR0530T1G D2 15V Zener Diode Central Semiconductor CMHZ4702 D3 0.4Vf Schottky, 500mA ON Semiconductor , SW pin will then be clamped to approximately the zener diode voltage of 18V. Current will then flow , MBR0530T1G D2 15V Zener Diode Central Semiconductor CMHZ4702 D3 0.4Vf Schottky, 500mA ON , possible to this pin & pin 4. Output switch. Connect to the inductor, output diode . Signal & Power


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PDF 190mA LM3410X 190mA. AN-1996 4.7uF 25V X7R MBR0530T1G LM3410XSD AN1996 RESISTOR footprint LM3410 TSW-102-07-T-S CRCW0603100RFKEA ,4.7uF 25V X7R XPEWHT-L1
zener diode B3

Abstract: rd 62 nec zener zener series RD B2 Zener zener diode numbering system 2248 IR 845 NEC 2532 n 749 characteristics of zener diode in reverse bias B2040 837 zener
Text: ZENER DIODE RD [ ] JS, RD [ ] ES, RD [ ] E, RD [ ] F CHARACTERISTICS & RELIABILITY 1 , this new product Zener diode is shown in Fig. 1. As can be seen in the figure, a planar Zener diode , Structure of DHD Type Zener Diode Document No. D11049EJ2V0AN00 (2nd edition) (Previous No. SEB , Planar Type Zener Diode Chip In RD [ ] JS Series, low noise and the sharp rise-up VZ-IZ characteristic , 10.82 11.26 10.82 11.26 10.87 11.43 (c) Zener voltage test method A Zener diode shows


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1999 - B2 Zener

Abstract: A2 9 zener diode zener mark code C1 zener diode B3 HZ16L Hitachi DSA00776 zener diode c2 zener mark code A2 zener diodes color coded b3 zener
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A(Z) Rev 1 November 1996 Features · · · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through 38V of zener voltage , Tstg -55 to +175 °C Electrical Characteristics (Ta = 25°C) Zener Voltage Reverese Current


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PDF ADE-208-118A DO-35 SC-48 B2 Zener A2 9 zener diode zener mark code C1 zener diode B3 HZ16L Hitachi DSA00776 zener diode c2 zener mark code A2 zener diodes color coded b3 zener
1999 - do-34 302 zener diode

Abstract: 5.6 B1 zener diode A2 zener diode HZS6A2L HZS7L HZS27L zener series RD zener mark code A2 zener diode A3 HZS9B2L
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A(Z) Rev 1 Dec. 1996 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. · Wide spectrum from 5.2V through 38V of zener voltage provide , °C) Zener Voltage Reverese Current Dynamic Resistance Test Condition IR (µA) VZ (V)*1 Test


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PDF ADE-208-121A DO-34 do-34 302 zener diode 5.6 B1 zener diode A2 zener diode HZS6A2L HZS7L HZS27L zener series RD zener mark code A2 zener diode A3 HZS9B2L
Not Available

Abstract: No abstract text available
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI Features · · · ADE-208-118A(Z) Rev 1 November 1996 Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through 38V of zener , 175 -55 to +175 Unit mW "C °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)*1 Type


OCR Scan
PDF ADE-208-118A DO-35 DO-35
1998 - 6.3 B1 zener diode

Abstract: zener diode B3 B1 6 zener diode ZENER A2 6 HZS7L diode Hitachi DSA002786 a3 7 zener 9.1 b3
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A(Z) Rev 1 Features · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. · Wide spectrum from 5.2V through 38V of zener voltage provide flexible , Characteristics (Ta = 25°C) Zener Voltage VZ (V)*1 Type HZS6L Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS7L A1 A2 A3 B1


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PDF ADE-208-121A 6.3 B1 zener diode zener diode B3 B1 6 zener diode ZENER A2 6 HZS7L diode Hitachi DSA002786 a3 7 zener 9.1 b3
marking code 9c diode

Abstract: No abstract text available
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI Features ADE-208-121A(Z) Rev 1 Dec. 1996 · Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. · Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. · Wide spectrum from 5.2V through 38V of zener voltage , °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)*1 Type Grade Min Max Reverese


OCR Scan
PDF ADE-208-121A HZS36-3L DO-34 marking code 9c diode
SOD-323FL

Abstract: No abstract text available
Text: Formosa MS SMD Zener Diode UDZ2.4B-FL THRU UDZ36B-FL List List , Date - Revision Page. A 8 Formosa MS SMD Zener Diode UDZ2.4B-FL THRU UDZ36B-FL , 8 Formosa MS SMD Zener Diode UDZ2.4B-FL THRU UDZ36B-FL Electrical characteristics (at T , 8 Formosa MS SMD Zener Diode UDZ2.4B-FL THRU UDZ36B-FL Pinning information Pin Pin1 , Page. A 8 Formosa MS SMD Zener Diode UDZ2.4B-FL THRU UDZ36B-FL Packing information


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PDF UDZ36B-FL MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 METHOD-1056 1000hrs. SOD-323FL
2006 - w11nk100z

Abstract: W11NK100 W11NK W11NK10 sound Processor acp 2371 STW11NK100Z JESD97 5K6000
Text: Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1mA (Open Drain) Min. Typ. 30 Max. Unit 0 V Protection features of gate-to-source zener diodes , STW11NK100Z STW11NK100Z N-channel 1000V - 1.1 - 8.3A - TO-247 Zener - Protected SuperMESHTM , Parameter Drain current (continuous) at TC=100°C 5.2 A IDM(1) Drain current (pulsed) 33.2 , (2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage


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PDF STW11NK100Z O-247 w11nk100z W11NK100 W11NK W11NK10 sound Processor acp 2371 STW11NK100Z JESD97 5K6000
217F

Abstract: SCS4048 mosfet MTBF
Text: 0.153 0.049 1. 2. 3. 4. 5. 6. 7. SEMICONDUCTOR: Diode , General Purpose Diode , Fast Recovery Pwr. Rectifier Diode , Power Rectifier Schottky Pwr. Zener Diode , General Purpose Si Power , in Table 1. And the predicted mean time between failure (MTBF): 332 ,172hrs. 3) COMMENTS It , EQUIP. FAILURE RATE = 3.010488 MTBF (hrs) = 1 x 106 hrs - = 332 ,172hrs Total


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PDF SCS4048 SCS4048. 85Vac-265Vac 47Hz-63Hz 172hrs 217F SCS4048 mosfet MTBF
2012 - Zener Diode minimelf

Abstract: RLZ24 RLZ Series
Text: GLASS MINI-MELF Zener Diode RLZ SERIES List Formosa MS List , 2011/09/16 Revision D Page. 9 Page 1 DS-221725 GLASS MINI-MELF Zener Diode RLZ , MINI-MELF Zener Diode Electrical characteristics (at T =25 C unless otherwise noted) o A Formosa MS , 2011/09/16 Revision D Page. 9 Page 3 DS-221725 GLASS MINI-MELF Zener Diode Formosa , -221725 GLASS MINI-MELF Zener Diode RLZ SERIES Formosa MS Pinning information Pin Pin1 Pin2 cathode


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PDF 1000hrs. DS-221725 Zener Diode minimelf RLZ24 RLZ Series
2006 - Not Available

Abstract: No abstract text available
Text: ratings Table 4. Symbol BVGSO STW11NK100Z Gate-source zener diode Parameter Test conditions , STW11NK100Z STW11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESHâ , (1) Drain current (pulsed) 33.2 A PTOT Total dissipation at TC = 25°C 230 W , -55 to 150 °C VESD (G-S) dv/dt(2) TJ Tstg Peak diode recovery voltage slope Operating , Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically


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PDF STW11NK100Z O-247
2010 - diode ZENER A26

Abstract: ZENER A16 ZENER A26 diode zener c23 A10 ZENER DIODE diode zener c25 ZENER A24 zener c23 ZENER A12 diod zener
Text: . Diode PHENITEC Monocrystalline 0.5W Diode lead 0.5W Zener Diodes Spec. Ink DO-35 Composition Sn 0.5W Zener Diodes Suppliers Diode lead DO-34 Model , LMTZJ* LMTZJ Series Zener Diodes 0.5Watt Peak Power VOLTAGE - 2.0 TO 30 Volts . LMTZJ series is for 500mW,DO-35 package or DO-34 package. . Zener voltage regulator diodes . Hermetically sealed glass silicon zener diodes . complete voltage range_1.88 to 30.51 volts . We declare that the material


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PDF 500mW DO-35 DO-34 LMTZJ30D LMTZJ30C LMTZJ30B LMTZJ30A LMTZJ27D LMTZJ27C LMTZJ27B diode ZENER A26 ZENER A16 ZENER A26 diode zener c23 A10 ZENER DIODE diode zener c25 ZENER A24 zener c23 ZENER A12 diod zener
2011 - zener diode phc 12

Abstract: zener diode phc zener diode phc 10 zener phc 12 zener diode phc 15 zener phc 15 zener diode phc 16 ph c15 zener 20/zener diode phc 12 ph c24 zener
Text: /4W 2 R38 680K Resistor 1/4W 1 SZ1 15V Zener Diode 1/2W 1 SZ2 12V Zener Diode 1/2W 1 SZ3, SZ4 5.1V Zener Diode 1/4W 2 U1 M8128A IC, Power Factor , 224 R32 1.2M C23 821/1KV C24 124/400V C25 332 /1KV VSS SD3 R40 300K R29 , 1.2M C26 332 /1KV R37 1M D20 HER106 7/9 R34 24K 2011-01-19 VDD R36 1M D18 , C24 124/400V POLYPROPYLENE FILM Capacitor 1 C25, C26 332 /1KV POLYPROPYLENE FILM


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PDF M8145 M8145 25/1W 75/1W M8128A zener diode phc 12 zener diode phc zener diode phc 10 zener phc 12 zener diode phc 15 zener phc 15 zener diode phc 16 ph c15 zener 20/zener diode phc 12 ph c24 zener
2012 - Not Available

Abstract: No abstract text available
Text: GLASS MINI-MELF Zener Diode RLZJ SERIES List Formosa MS List , 2011/09/16 Revision B Page. 9 Page 1 DS-221732 GLASS MINI-MELF Zener Diode RLZJ , 2011/09/16 Revision B Page. 9 Page 2 DS-221732 GLASS MINI-MELF Zener Diode Electrical , Page 3 DS-221732 GLASS MINI-MELF Zener Diode Formosa MS o Electrical characteristics (at , /16 Revision B Page. 9 Page 5 DS-221732 GLASS MINI-MELF Zener Diode RLZJ SERIES


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PDF 1000hrs. DS-221732
2013 - Not Available

Abstract: No abstract text available
Text: SURFACE MOUNT ZENER DIODE FEATURES • Wide Zener Voltage Range Selection, 2.4V to 36V • Flat Lead , IF VF Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Reverse Voltage Forward , 0.5 1000 50 1 UDZS3V3BWF D< 3.32 3.53 5 120 0.5 1000 20 1 , Voltage = 1 V Maximum @ IF = 10 mA for all types Notes: 1. The Zener Voltage (VZ) is tested under


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PDF UDZS36VBWF OD-323F OD-323F
2003 - w11nk100z

Abstract: W11NK100 stw11nk100z
Text: Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the , TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 1000 1000 ± 30 8.3 5.2 33.2 230 1.85 6000 4.5 -55


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PDF STW11NK100Z O-247 O-247 w11nk100z W11NK100 stw11nk100z
2011 - zener diode 332

Abstract: UDZS15V UDZS3V9
Text: UDZS2V4BWF THRU UDZS36VBWF SURFACE MOUNT ZENER DIODE FEATURES · Wide Zener Voltage Range , specified Symbol VZ IZT ZZT IZK ZZK IR VR IF VF Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR , D7 D8 D9 DA DB DC DE DF DG DH DJ DK DL DM DN DP DR DS VZ @ IZT (Volts) Min 2.43 2.69 3.01 3.32 , @ IF = 10 mA for all types Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of


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PDF UDZS36VBWF OD-323F OD-323F zener diode 332 UDZS15V UDZS3V9
zener diode B3

Abstract: diode zener ZL 15 zener diode t5 DEI-602 zener diode data manual lm 338 zener RD zener diode zener diode numbering system B2 Zener t5 zener
Text: OF ZENER DIODE AND NOISE CLIPPING DIODE 2.1 Zener Diode Definition A Zener diode has the , . VZ - Z Characteristics Example Figure 1. Zener Diode - Current Characteristics 2.2 Noise , VF User's Manual D14724EJ3V0UM00 7 3. MAXIMUM RATINGS OF ZENER DIODE AND NOISE CLIPPING , D14724EJ3V0UM00 10 m 100 m 4. ZENER DIODE CHARACTERISTICS Figure 12 shows the VZ-IZ characteristics of a Zener diode . The equivalent circuit can be represented as shown in Figure 13. Here, VZ is the


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PDF D14724EJ3V0UM00 fo88-6130 zener diode B3 diode zener ZL 15 zener diode t5 DEI-602 zener diode data manual lm 338 zener RD zener diode zener diode numbering system B2 Zener t5 zener
UDZS2V4B

Abstract: UDZSxxxB Series SOD-323L dj8j marking 8J dj-8j D47N
Text: UDZSxxxB Series 200 mW SOD-323L Series Surface Mount Zener Voltage Regulator Diodes , serviceability of the diode may be impaired. ELECTRICAL RATINGS (Rating 25°C ambient temperature unless , 3.32 3.53 5 120 1000 0.5 20 1.0 3.60 3.85 5 90 600 1.0 4.5 1.0 3.89 4.16 5 90 600 , Maximum @ IF = 10 mA for all types 2. The VZ is tested under pulse condition of 10 mS 3. The zener , equal to 10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK. 01-June-2008 Rev. B


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PDF OD-323L OD-323L OD-323L, MIL-STD-202, 60-cycle 01-June-2008 UDZS2V4B UDZSxxxB Series SOD-323L dj8j marking 8J dj-8j D47N
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