The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065030K4S UF3C065030K4S ECAD Model UnitedSiC Power Field-Effect Transistor, 85A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
UJ3N120070K3S UJ3N120070K3S ECAD Model UnitedSiC Power Field-Effect Transistor, 33.5A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
UJ3C120040K3S UJ3C120040K3S ECAD Model UnitedSiC Power Field-Effect Transistor, 65A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L

x-band power transistor 50W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: 50W X-Band Light Weight BUC SSPB 50W SSPB110X series Features      Output power of 50W in a single compact package High linearity Full M&C capability via RS485 or , Solid State technology the new series light weight X-Band BUCs provide high power density in a compact , available as SSPA or SSPB (BUC). The product described in this bulletin is for a 50W BUC. Options ï , www.advantechwireless.com EXTRA-Lightweight 50W X-Band SSPB General Specifications 50W Operating Frequency


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PDF SSPB110X RS485 MIL-STD-188-164A r/RS232 C/1000> PB-SSPB-X-50-13150
Not Available

Abstract: No abstract text available
Text: X-Band Hub-mount SSPA 20W to 50W AWMA-2000XTM series Features           Remote Monitor & Control High gain and linearity Output power up to 50W (see , -80 dBc 50W √ +47 dBm +46 dBm Power Requirements AC input voltage 110/220 VAC auto , over-temperature shutdown Automatic high reflected power shutdown Infinite VSWR protection CE Marking Overview The AWMA-X series are the outdoor solid-state power amplifiers (SSPAs), operating in X-Band


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PDF AWMA-2000XTM AWMA-2000X PB-AWMA-X-20-50-13150
Not Available

Abstract: No abstract text available
Text: amplifier with an output power of 25W to 125W (see table A) Phase-locked oscillator to external 10MHz , thermal runaway and out-of-lock conditions Output sample monitoring port Built-in power supply Light , transmitters, TM operating in the C/X and Ku-Band. The SSPB-2100 is an integrated unit, complete with power , based on Advantech Wireless industry proven reliable solid-state high power amplifiers. The use of high efficiency power supply and conservative thermal designs contribute to the trouble-free operation of the


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PDF SSPB-2100XTM 10MHz MIL-STD-188-164A SSPB-2100 MS3102R16-10PX PB-SSPBm-X-25-125-13150
Not Available

Abstract: No abstract text available
Text: amplifier with an output power from 16W to 250W Phase-locked oscillator to external 10MHz reference High linearity (low intermodulation products) Weatherproof package Field-Replaceable Power Supply Remote , monitoring port Built-in power supply Compact packaging CE Marking MIL-STD-188-164A latest revision , in the X-Band. The SSPB-2000X is an integrated unit, complete with power supply, phase-locked , proven reliable solid-state high power amplifiers. Built-in design features and assembly methods


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PDF SSPB-2000XTM 10MHz MIL-STD-188-164A SSPB-2000X PB-SSPB-X-16-250-13150
Not Available

Abstract: No abstract text available
Text: loss 70 ± 18 MHz 50  (optional 75) BNC (female) 18 dB RF Output Output power (P1dB , ) 50W (typical) IEC 603320 10A Monitor and Control RS 485 RS 232 Discrete Ethernet (optional) NORTH AMERICA USA Tel: +1 703 659 9796 Fax: +1 703 635 2212 info.usa@advantechwireless.com Power Supply Voltage Power Connector DB9 DB9 DB9 RJ45 F (optional) SOUTH AMERICA Tel: +1 514 420


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PDF FCS200R ARUD-70XSR ARUD-70XXR ARDD-XS70R ARDD-XX70R RS485 RS232 PB-FCS200R-X-13150
Not Available

Abstract: No abstract text available
Text: — Type N (female) 18 dB RF Output Output power (P1dB) Frequency range IMD3 (two tone) Output , dBc max @ -5 dBm output Type N (female) 50  18 dB IF Output Output power (P1dB) Frequency , Width 19” (482.6 mm) Height 1U 1.75” (44.5 mm) Depth 22” (558.8 mm) -10 Power Supply Voltage Power Connector 90 – 265 VAC (47 – 63 Hz) 25W (typical, single converter) 35W (typical, dual converter) 50W (typical, quad converter) IEC 603320 10A Monitor and Control RS 485 RS


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PDF FCB200 conv796 PBQ-FCB200-X-13150
Not Available

Abstract: No abstract text available
Text: H E W L E T T - P A C K A R D / C M PN TS blE D m 4 4 47 50 4 □ G G C 1721 □ 'H HEWLETT PACKARD PIN Diode Limiter Technical Data 5082-3071 Features • H igh P ow er H andling C apability 50 W Peak Pulse Power • Low Interm odulation P roducts Typical 0.2 W Threshold , .-65°C to +125°C Power Dissipation , Pin = 50W 1 |xsec HEA T SINK Figure 1. H eat Sink Polarity. Figure 2. Typical P ulse Lim


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Not Available

Abstract: No abstract text available
Text: Automatic BUC/LNB disable for low power application Complete unit mounted outdoors in weather proof , minimize power consumption when it is not needed. From sleep mode, the modem can start transmitting data , 8W with Advantech BUC with internal power supply Supply Voltage 100-240 VAC; 50 Hz / 60 Hz (with included PSU); +24VDC Power Consumption IDU in low power mode: 10W IDU+ODU in operational state: 50W typical with 2W BUC IDU Operating Temperature -40 C to +65 C, Humidity 100% condensing


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PDF S4920 PB-S4920-001-13150
Not Available

Abstract: No abstract text available
Text: to 5W Higher power available with optional external power supply 100-240 VAC; 50 Hz / 60 Hz (with included PSU); +24VDC IDU in sleep power mode: 10W IDU+ODU, in operational state: 50W typical with 2W BUC , (optional) VLAN support Easy and simple installation Automatic BUC disable for low power application , operations the modem includes a sleep mode of operation to minimize power consumption when it is not needed , Size Supply Voltage Power Consumption IDU Operating Temperature IDU Storage Temperature


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PDF S6920 PB-S6920-001-13150
Not Available

Abstract: No abstract text available
Text: power supply Supply Voltage 100-240 VAC; 50 Hz / 60 Hz (with included PSU); +24VDC Power Consumption IDU in sleep power mode: 10W IDU+ODU, in operational state: 50W typical with 2W BUC IDU , simple installation Automatic BUC disable for low power application Ideal for rugged environment , includes a sleep mode of operation to minimize power consumption when it is not needed. From sleep mode


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PDF S5920 PB-S5920-001-13150
viasat

Abstract: x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
Text: power of 50W output power at 1-dB compression (P1dB), typical insertion loss of 0.3dB at 1GHz, high , JANUARY 2009 High Power UltraCMOS Switches and Mixers Satisfy Demanding Military Design , in these areas must balance performance and reliability with the core constraints of size, power , as well as handheld and manpack systems that require a small radio with low power consumption and , power drain), and highreliability. There are other higher-frequency military applications that require


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PDF com/articles/2008/2008 PE95420) viasat x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
1998 - FUJITSU XBAND

Abstract: No abstract text available
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power : P1dB = 32.5dBm(Typ , Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power , gain, and efficiency. Fujitsu , MAXIMUM RATING (Ambient Temperature Ta=25¡C) Item Drain-Source Voltage Gate-Source Voltage Total Power , Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added


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PDF FLX207MH-12 FLX207MH-12 FCSI0598M200 FUJITSU XBAND
1998 - FUJITSU XBAND

Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power : P1dB = 30.0dBm(Typ , Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power , gain, and efficiency. Fujitsu , MAXIMUM RATING (Ambient Temperature Ta=25¡C) Item Drain-Source Voltage Gate-Source Voltage Total Power , Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added


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PDF FLX107MH-12 FLX107MH-12 FCSI0598M200 FUJITSU XBAND
x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: Transistor (MESFET) technology. The MESFET active area is formed using selective ion implantation. Both , optimized for power , low-noise, or switching performance. Selective implantation eliminates performance , Arrhenius plot of an HPA under RF life-test at rated power . A 1-dB loss of power was viewed as a "failure." , signal MSAG Arrhenius plots show about an order of magnitude longer MTTF than the power plot of Figure 3. Integration Leverage The ability to combine microwave power , low-noise, and switching devices


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x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: Semiconductor Field Effect Transistor (MESFET) technology, using selective ion implantation to form the active , independently optimized for power , low-noise, or switching performance. Selective implantation eliminates the , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB , reliability, Figure 1 is an Arrhenius plot of an HPA under RF life-test at rated power . A 1-dB loss of power , of magnitude longer MTTF than the power amplifier shown in Figure 1. Lower Cost The


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m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: TYPE FREQUENCY BAND C- Ku Ka POWER OUTPUT 60W 50W SATURATION GAIN 50dB * COOLING , operational amplifier General purpose operational amplifier MTP-5 package operational amplifier Low power operational amplifier Programmable operational amplifier Low noise operational amplifier Low power operational amplifier Low power operational amplifier Low power J-FET input operational amplifier J-FET input , bandwidth operational amplifier Low power J-FET input operational amplifier Single supply low power


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PDF NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM353 NJM1458 NJM2041 m1305 transistor w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
diode ph-150

Abstract: ph-30 diode LM 3140 diode ph-30 LM 3141
Text: . 5082Junction Operating and Storage Temperature Range Power Dissipation1 1 1 Peak Incident Pulse Pow er1 2 1 , 225W 50W 150V 70 V 230°C for 5 sec. N otes: 1. Device properly m ounted in sufficient h eat sink at


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PDF AN929: diode ph-150 ph-30 diode LM 3140 diode ph-30 LM 3141
2013 - Not Available

Abstract: No abstract text available
Text: (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain , PN: CGHV1F 006S 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power , the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency , Units Small Signal Gain 23.0 22.0 21.4 dB Output Power @ PIN = 28 dBm 34.5 36.5 , 10% duty. Features • Up to 18 GHz Operation • 8 W Typical Output Power • 17 dB Gain at


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PDF CGHV1F006S CGHV1F006S
smd transistor M30

Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: realised. Besides a family of discrete devices the GaAs group has designed low-noise amplifiers, power , MESFET with fT > 20 GHz Low-cost, up to X-band, high power at low VDS, fT = 30 GHz HEMT with fT up to , heterobipolar transistor , fT = 30 GHz production production production HEMT 60 HEMT 110 HBT30 , Power -, Low-noise FET and HEMT (arbitrary gate width); HBT typical design process is shown in Table , Measurements Network Analyzers Automatical Bonding and Packaging Automatical Power Load


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PDF D-81541 smd transistor M30 siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
IMPATT

Abstract: No abstract text available
Text: transistor , Gunn or IMPATT oscillators as well as tunable filters, phase shifters and pre-selectors. M , Storage Temperature Temperature Coefficient Power Dissipation (derate linearly to zero at 150


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PDF MA45300 IMPATT
2011 - Not Available

Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Power1 Power Gain1 Power Added Efficiency1 5.8 GHz 29.5 15 22.5 30 (TC = 25°C) 6.4 GHz 24.0 23 20.0 , simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F
2011 - Not Available

Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Power1 Power Gain1 Power Added Efficiency1 5.8 GHz 29.5 15 22.5 30 (TC = 25°C) 6.4 GHz 24.0 23 20.0 , Ratings (not simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F
2011 - x-Band Hemt Amplifier

Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Power1 Power Gain1 Power Added Efficiency1 5.8 GHz 29.5 15 22.5 30 (TC = 25°C) 6.4 GHz 24.0 23 20.0 , simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier
2011 - CMPA5585025F

Abstract: power transistor gaas x-band CMPA5585025F-TB
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Power1 Power Gain1 Power Added Efficiency1 5.8 GHz 29.5 15 22.5 30 (TC = 25°C) 6.4 GHz 24.0 23 20.0 , Ratings (not simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB
1999 - microwave transistor bfy193

Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Text: K-Band HEMTs Power GaAs Microwave C-Band MESFETs Power GaAs Microwave X-Band MESFETs General Puprose , P1, T T1, T2 17 18 19 5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1 , as well as power MESFETs and corresponding monolithic microwave intregated circuits (MMICs) are , important application fields including especially low noise HEMTs and power FET devices for microwave , MIL883 quality already in 1986. Development of GaAs power devices at the Semiconductor Group started in


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PDF MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
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