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x-band mmic Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - x-band mmic

Abstract: No abstract text available
Text: FMA411 X-BAND MMIC · PERFORMANCE 8.5 ­ 14.0 GHz Operating Bandwidth 2.6 dB Noise Figure 18 dB , /semis Revised: 11/03/05 Email: sales@filcsi.com FMA411 X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1 , X-BAND MMIC · MECHANICAL OUTLINE: Notes: 1) All units are in microns, unless otherwise specified , FMA411 X-BAND MMIC · ASSEMBLY / BONDING DIAGRAM (50% / 75% BIAS SETTING): Phone: +1 408 , : sales@filcsi.com FMA411 X-BAND MMIC · ASSEMBLY / BONDING DIAGRAM (50% / 50% BIAS SETTING): Notes: ·


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PDF FMA411 FMA411 x-band mmic
x-band mmic

Abstract: MMIC X-band amplifier X-band amplifier FMA246 MIL-HDBK-263 x-band power amplifier
Text: PRELIMINARY · HIGH-GAIN X-BAND MMIC PERFORMANCE 8.0 ­ 14.0 GHz Operating Bandwidth 2.5 , : sales@filcsi.com PRELIMINARY FMA246 HIGH-GAIN X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol , Email: sales@filcsi.com PRELIMINARY · FMA246 HIGH-GAIN X-BAND MMIC MECHANICAL OUTLINE , Email: sales@filcsi.com PRELIMINARY · FMA246 HIGH-GAIN X-BAND MMIC MECHANICAL OUTLINE , FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14


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PDF FMA246 FMA246 MIL-STD-1686 MIL-HDBK-263. 100x100 x-band mmic MMIC X-band amplifier X-band amplifier MIL-HDBK-263 x-band power amplifier
x-band mmic

Abstract: x-band amplifiers MMIC X-band amplifier FMA411 MIL-HDBK-263
Text: PRELIMINARY FMA411 LOW-NOISE X-BAND MMIC · PERFORMANCE 8.5 ­ 14.0 GHz Operating , LOW-NOISE X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Supply Voltage , : sales@filcsi.com PRELIMINARY · FMA411 LOW-NOISE X-BAND MMIC MECHANICAL OUTLINE: Notes: 1) All , FMA411 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 8.5 to , will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is


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PDF FMA411 FMA411 MIL-STD-1686 MIL-HDBK-263. 100x100 x-band mmic x-band amplifiers MMIC X-band amplifier MIL-HDBK-263
2002 - x-band mmic core chip

Abstract: x-band MMIC MASWGM0001-DIE mmic core chip RO-P-DS-3057 MA03502
Text: Double-Throw Switch 4/6 MASWGM0001-DIE R/T MA03502 X-BAND MMIC CONTROL CHIP P2 R P3 T , Information Features 2.0-14.0 GHz GaAs MMIC Switch 2.0-14.0 GHz Operation 3 dB Insertion , X-Band control MMIC . These two chips form the core of a transceiver module. Mode Control Logic , Figure 5. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC , die attach of this MMIC . Follow the manufacturer's instructions. If solder is employed, use AuSn (80


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PDF RO-P-DS-3057 MASWGM0001-DIE MASWGM0001-Die MA03502 MA03503, x-band mmic core chip x-band MMIC mmic core chip
2008 - x-band mmic

Abstract: FMA246 60IDSS 60IDS
Text: FMA246 Preliminary Datasheet v3.0 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: · · · · · · , Ports GENERAL DESCRIPTION: The FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC , before the output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W. PAD LAYOUT , close to the MMIC as practical. 2 The configuration shown below will result in operating current bias , for the MMIC . For lower current operation, the 3rd stage can be set to 50% by bonding to the pad just


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PDF FMA246 FMA246 x-band mmic 60IDSS 60IDS
2007 - Not Available

Abstract: No abstract text available
Text: FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • â , -stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14 GHz bandwidth. The , output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W. PAD LAYOUT: PAD NAME , close to the MMIC as practical. 2 The configuration shown below will result in operating current bias , setting for the MMIC . For lower current operation, the 3 stage can be set to 50% by bonding to the pad


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PDF FMA246 FMA246
2006 - X-band Gan Hemt

Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W , de-coupling capacitor (150pF recommended value) should be placed as close to the MMIC as practical. 2 The , ) 50%, 50%, and 75%, which is the standard recommended bias setting for the MMIC . For lower current


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PDF FMA246 FMA246 14GHz. 19dBm FMA246-000 FMA246-000SQ FMA246-000S3 DS090309 X-band Gan Hemt A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
2006 - x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over , stage. The aggregate MMIC thermal resistivity is approximately 80 C/W. 2 Pad Layout C Pad A B C , (150pF recommended value) should be placed as close to the MMIC as practical. 2The configuration shown , %, and 75%, which is the standard recommended bias setting for the MMIC . For lower current operation, the


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PDF FMA246 FMA246 14GHz. FMA246-000 FMA246-000SQ FMA246-000S3 DS110503 x-Band Hemt Amplifier x-band mmic X-band GaAs pHEMT MMIC Chip
2006 - Not Available

Abstract: No abstract text available
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , output stage. The aggregate MMIC thermal resistivity is approximately 80C/W. 2 Pad Layout  , value) should be placed as close to the MMIC as practical. 2 The configuration shown will result in , the standard recommended bias setting for the MMIC . For lower current operation, the 3rd stage can be


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PDF FMA246 FMA246 14GHz. FMA246-000SQ FMA246-000 FMA246-000S3 DS110503
2008 - 60IDS

Abstract: x-band mmic
Text: FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: · · · · · · · 8.0 ­ 14.0 GHz Operating , DESCRIPTION: The FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over , reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is , pF recommended value) should be placed as close to the MMIC as practical. 2 The configuration shown , %, which is the standard recommended bias setting for the MMIC . For lower current operation, the 3rd stage


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PDF FMA246 FMA246 22A114. MIL-STD-1686 MIL-HDBK-263. 60IDS x-band mmic
2011 - CMPA801B025

Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
Text: Thermal Performance TCASE = 85°C X-Band MMIC on 440208 Pkg, .25" Thk Cu Fixture, Tcase=85C ThetaJC (C/W , CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC , Power Amplifier Cree's CMPA801B025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit ( MMIC , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Lower Frequency Upper Frequency1 Power


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PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack
2011 - Not Available

Abstract: No abstract text available
Text: . - Transient Thermal Performance X-Band MMIC on 440208 Pkg,TCASE =Cu Fixture, Tcase=85⁰C .25" Thk , CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC , Power Amplifier Cree’s CMPA801B025F is a gallium , ( MMIC ). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line


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PDF CMPA801B025F CMPA801B025F CMPA80 1B025F
2011 - Not Available

Abstract: No abstract text available
Text: . - Transient Thermal Performance X-Band MMIC on 440208 Pkg,TCASE =Cu Fixture, Tcase=85⁰C .25" Thk , CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC , Power Amplifier Cree’s CMPA801B025F is a gallium , ( MMIC ). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line


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PDF CMPA801B025F CMPA801B025F CMPA80 1B025F
2011 - CMPA801B025

Abstract: X-band Internally Matched Power GaN HEMTs
Text: . - Transient Thermal Performance X-Band MMIC on 440208 Pkg,TCASE =Cu Fixture, Tcase=85⁰C .25" Thk , CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC , Power Amplifier Cree’s CMPA801B025F is a gallium , ( MMIC ). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown , greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in , Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line


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PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs
2004 - FMM5061VF

Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
2005 - EMM5068VU

Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES High Output Power: Pout , =50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that , 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs , /EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD , Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT


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PDF ES/EMM5068VU EMM5068VU x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
X-band amplifier

Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5kΩ) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , [mA] P1dB 36 EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER , -Tone Total Output Pow er [dBm ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN


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PDF EMM5068X EMM5068X X-band amplifier 462 008 0004 00 AF
2006 - EMM5068X

Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5k) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD=6V, IDD(DC)=1500m A , ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF EMM5068X EMM5068X X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
x-band mmic core chip

Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG® Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase , . A discussion of the merits of multifunction MMIC integration using MSAG® Process 5 will be , success. The X-band control MMIC designed using the MSAG® process and following the outlined design , microwave control MMIC resulted in an RF spec yield of over 90%.making this chip extremely desirable for


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2004 - FMM5061VF

Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB 36 FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF FMM5061 x-Band High Power Amplifier ED-4701
2004 - Not Available

Abstract: No abstract text available
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , mA dB dB 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT , FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage


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PDF FMM5061VF FMM5061VF
2002 - MA03501D

Abstract: x-band mmic
Text: V 1.00 MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature V1.00 X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical Characteristics


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PDF MA03501D MA03501D x-band mmic
2002 - x-band mmic

Abstract: DA10 DA11 MA03503D
Text: V 1.00 MA03503D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Parallel Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , shifter/ attenuator/buffer amplifier MMIC . The on-chip driver circuitry allows for control of the 6 phase , dB 1. TB = MMIC Base Temperature V1.00 X-Band Parallel Input Gain/Phase Control MMIC 2/7 , additional data sheets and product information. V1.00 X-Band Parallel Input Gain/Phase Control MMIC


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PDF MA03503D MA03503D x-band mmic DA10 DA11
2002 - x-band MMIC

Abstract: X band 5-bit phase shifter MA03501D MMIC X-band amplifier x-band mmic phase
Text: RO-P-DS-3004 - - MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature RO-P-DS-3004 - - X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical


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PDF RO-P-DS-3004 MA03501D MA03501D x-band MMIC X band 5-bit phase shifter MMIC X-band amplifier x-band mmic phase
x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB


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