The Datasheet Archive

Top Results (3)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
HMC717ALP3E HMC717ALP3E ECAD Model Analog Devices Inc GaAs pHEMT MMIC Low Noise Amplifier, 4.8 to 6.0 GHz
ADH519LSH6-EMX ADH519LSH6-EMX ECAD Model Analog Devices Inc Aerospace GaAs PHEMT MMIC Low Noise Amplifier, 17.5 - 31.5 GHz
EV1HMC717ALP3 EV1HMC717ALP3 ECAD Model Analog Devices Inc GaAs pHEMT MMIC Low Noise Amplifier, 4.8 to 6.0 GHz

x-band mmic lna Datasheets Context Search

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2002 - x-band limiter

Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Text: 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB - 2/6 RO-P-DS-3002 - - X-Band 10W Limiter/ 2-stage LNA MA01502D Maximum Operating Conditions 1 , -4.5 -5.0 -5.5 V Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C - 33.1 °C/W * VDD * IDQ Operating


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PDF RO-P-DS-3002 MA01502D MA01502D x-band limiter x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter 6 ghz amplifier 10w
2002 - x-band limiter

Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Text: 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , W 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB V1.00 X-Band 10W Limiter/ 2-stage LNA 2/6 MA01502D Maximum Operating Conditions 1 Parameter , -5.5 V Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C - 33.1 °C/W * VDD * IDQ Operating Instructions This


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PDF MA01502D MA01502D x-band limiter MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
2002 - x-band limiter

Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
Text: 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , ) PRF 10 W 1. TB = MMIC Base Temperature 2/7 RS-O-P-DS-3003 - - X-Band 10W Limiter/ 3-stage LNA MA01503D Maximum Operating Conditions 1 Parameter Absolute Maximum Symbol Units , Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base , sheets and product information. RS-O-P-DS-3003 - - X-Band 10W Limiter/ 3-stage LNA 3/7


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PDF RO-P-DS-3003 MA01503D MA01503D x-band limiter x-band mmic LNA x-band MMIC limiter band Limiter
2002 - MAALGM0002-DIE

Abstract: X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
Text: 23 dBm 1. TB = MMIC Base Temperature - 2/6 RO-P-DS-3061 - - X-Band LNA , 8.0-12.0 GHz GaAs MMIC Amplifier Features 2.3 dB Noise Figure 8.0-12.0 GHz Operation , 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150 , sheets and product information. RO-P-DS-3061 - - X-Band LNA 3/6 MAALGM002-DIE 30 6 Gain , www.macom.com for additional data sheets and product information. RO-P-DS-3061 - - X-Band LNA 4/6


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PDF RO-P-DS-3061 MAALGM0002-DIE MAALGM0002-DIE X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
x-band mmic lna

Abstract: x-band mmic LNA x-band FMA219BF FMA219 MIL-HDBK-263 bc 408 equivalent LNA 9GHz
Text: PRELIMINARY · X-BAND LNA MMIC PERFORMANCE 7.0 ­ 11.0 GHz Operating Bandwidth 1.5 dB , Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC ABSOLUTE , /semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC , PRELIMINARY · FMA219 X-BAND LNA MMIC TYPICAL RF PERFORMANCE (VDD = +3V, IDD = IOP) FMA219 FREQUENCY , ://www.filtronic.co.uk/semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC


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PDF FMA219 FMA219 x-band mmic lna x-band mmic LNA x-band FMA219BF MIL-HDBK-263 bc 408 equivalent LNA 9GHz
2004 - X-band lna

Abstract: x-band mmic lna FMA219 LNA 9GHz
Text: X-BAND LNA MMIC · DESCRIPTION AND APPLICATIONS The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a , Dissipation Gain Compression 1 FMA219 X-BAND LNA MMIC Symbol VDD IDD PIN TSTG PTOT Comp. 2 2 Test , :// www.filcs.com Revised: 8/16/04 Email: sales@filcsi.com PRELIMINARY FMA219 X-BAND LNA MMIC · , X-BAND LNA MMIC 4.0 14.0 3.5 12.0 Output Power (dBm) Pout@11GHz Comp@7GHz 3.0


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PDF FMA219 FMA219 11GHz X-band lna x-band mmic lna LNA 9GHz
2005 - RO-P-DS-3061

Abstract: X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE
Text: MMIC Base Temperature RO-P-DS-3061 - - 2/6 X-Band LNA Maximum Operating Conditions 1 , Information 8.0-12.0 GHz GaAs MMIC Amplifier Features 2.3 dB Noise Figure 8.0-12.0 GHz Operation , Characteristic Drain Voltage Gate Voltage Junction Temperature MMIC Base Temperature Symbol VDD VGG TJ TB Min 2.5 -2.0 Typ 3.0 -0.6 Max 5.0 -0.4 150 Note 2 Unit V V °C °C 2. Maximum MMIC Base Temperature = 150°C - , sheets and product information. RO-P-DS-3061 - - 3/6 X-Band LNA 30 MAALGM002-DIE 6 Gain 25


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PDF RO-P-DS-3061 MAALGM0002-DIE MAALGM0002-DIE PAD1504I BVA80UM BVA80UM RO-P-DS-3061 X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE
2002 - x-band limiter

Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Text: ) PRF 10 W 1. TB = MMIC Base Temperature V1.00 X-Band 10W Limiter/ 3-stage LNA 2/7 , 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150 , information. V1.00 X-Band 10W Limiter/ 3-stage LNA 3/7 MA01503D Typical Small Signal Characteristics (VDD=5V, VGG=-5V) TYPICAL MEASURED GAIN AND NOISE FIGURE OF THE THREE-STAGE LIMITER/ LNA 2 5.0 2


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PDF MA01503D MA01503D x-band limiter x-band mmic band Limiter LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC , with each microwave device independently , . Cost Drivers Yield is the prime MMIC cost driver. MSAG yields, even for very complex chips, are


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x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB


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1993 - 71200-H1

Abstract: y-parameter x-band mmic lna X-band lna MAAM28000-A1 MAAM71200-H1 X-band low noise amplifiers mmic case styles maam 23000-A1
Text: Application Note M542 Electrical Characterization of Packages for Use with GaAs MMIC , our MMIC amplifier products which cover frequencies up to 12 GHz. In addition, the technique has been employed to characterize injection-molded plastic packages and to evaluate nonprobeable MMIC 's. Therefore, to evaluate and identify candidate packages for each of the amplifiers in our MMIC amplifier , our MAAM71200-H1, a packaged 7-12 GHz GaAs MMIC low noise amplifier. 1 Visit www.macomtech.com


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1993 - maam 23000-A1

Abstract: OXLEY x-band mmic lna 71200-H1 LNA x-band mmic case styles MAAM28000-A1 MAAM71200-H1 x-band lna chip
Text: Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers Abstract A test , microwave packages in order to identify appropriate packages for our MMIC amplifier products which cover , plastic packages and to evaluate non-probeable MMIC 's. Introduction Most package vendors have very , . Therefore, to evaluate and identify candidate packages for each of the amplifiers in our MMIC amplifier , for Use with GaAs MMIC Amplifiers fixture practically any DUT, all that is needed is a brass plate


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PDF 26100-B1 maam 23000-A1 OXLEY x-band mmic lna 71200-H1 LNA x-band mmic case styles MAAM28000-A1 MAAM71200-H1 x-band lna chip
directional coupler chip 8 GHz

Abstract: x-band limiter electromagnetic pulse generator x-band mmic lna 5310 MMIC limiter band Limiter circulator monolithic "electromagnetic pulse" electromagnetic pulse
Text: power limiter/ LNA MMIC is shown in Figure 1. Figure 2 shows the photograph of the twostage balanced , the commercially available M/A-COM limiter/ LNA MMIC [1]. This limiter/ LNA has an operating bandwidth , . MA01502D, a commercially available C/X-band integrated LNA /Limiter. MMIC size: 4.6 ×3.1 mm. and they were , An Examination of Recovery Time of an Integrated Limiter/ LNA Jim Looney, David Conway, and Inder , military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are


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x-band mmic core chip

Abstract: CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
Text: Semiconductors (UMS) has a considerable heritage in the design and production of MMIC solutions for space and , and receive paths. The company's X-band T/R modules, composed of a low noise amplifier ( LNA ), a core , volume, single recess 0.25 µm gate length pHEMT process is used for the LNA and core chips. Two , stability of the device. LNA and Core Chips The CHA1014 is a 7 to 14 GHz, 50 matched LNA designed to be used with the LNA United Monolithic Semiconductors SAS France MICROWAVE JOURNAL n OCTOBER


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PDF com/28495-74 x-band mmic core chip CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
x-band microwave fet

Abstract: x-band mmic lna LNA x-band noise jammer TGA2600 TGA2600-EPU
Text: Applications The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB. · · Radar X band LNA , ECM Measured Fixtured , 1.4 Noise Figure (dB) 1.2 The TGA2600-EPU LNA is suitable for a variety of C and X band , !ÃÃÃÃÃWqÃÃÃÃÃÃÃÃÃÃÃÃÃ&$ÃÃ&$Ã"ÃÃ" 7qÃhqÃÆ"ÃÃÃÃÃSAÃPÃÃÃÃÃÃ&$ÃÃ $Ã"ÃÃ% 7qÃhqÃÆ#ÃÃÃÃÃWt ÃÃÃÃÃÃÃÃÃÃÃ&$ÃÃ&$Ã"ÃÃ" GaAs MMIC devices are , Assembly Diagram 9G S) 5) ,1 5) 287 S) 9J GaAs MMIC devices are susceptible to


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PDF TGA2600 15-um TGA2600-EPU x-band microwave fet x-band mmic lna LNA x-band noise jammer TGA2600
Not Available

Abstract: No abstract text available
Text: €¢ Military Radar LNA Receiver Chain Protection Fixtured Measured Performance -3 -1.0 -6 -1.5 , Data Sheet November 15, 2006 TGL2201 Mechanical Drawing GaAs MMIC devices are susceptible to , . Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic


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PDF TGL2201
2003 - x-band limiter

Abstract: x-band mmic lna LNA x-band TGL2201
Text: Radar LNA Receiver Chain Protection Fixtured Measured Performance -3 -1.0 -6 -1.5 -9 , 3 Product Data Sheet November 15, 2006 TGL2201 Mechanical Drawing GaAs MMIC devices , . Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic


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PDF TGL2201 x-band limiter x-band mmic lna LNA x-band TGL2201
2004 - LNA x-band

Abstract: TGA2600-EPU
Text: LNA , ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 , The TGA2600-EPU LNA is suitable for a variety of C and X band applications such as radar receivers , * [ [ [ [ [ [ [ [ [ [ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be , : To Q2 Q1 : 470 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge , should not be used. Maximum stage temperature is 150 °C. GaAs MMIC devices are susceptible to damage


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PDF TGA2600-EPU TGA2600-EPU LNA x-band
2014 - sspa transmitter x band

Abstract: No abstract text available
Text: circuit integration techniques. These products Th incorporate state of the art GaAs and GaN MMIC devices , high-power amplifier MMIC devices, circuit integration and power power combining techniques, which have been productized for a wide range of applications. QuinStar’s Own MMIC Development QuinStar has , MMICs. The se include power amplifiers, driver These amplifiers, LNA and other significant functions or devices. LNAs Many strategic products now utilize QuinStar’s own MMIC chips, giving QuinStar


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PDF 1980s sspa transmitter x band
Not Available

Abstract: No abstract text available
Text: X-band GaAs LNA , housed in a miniature, lead-free 3 mm PQFN surface mount plastic package. This MMIC


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PDF MAAL-010528 16-Lead MAAL-010528 S2083
2003 - TGL2201

Abstract: MMIC limiter TGL2201-EPU
Text: Military Radar LNA Receiver Chain Protection Fixtured Measured Performance -3 -1.0 -6 -1.5 , Product Information March 7, 2003 TGL2201-EPU Mechanical Drawing GaAs MMIC devices are susceptible , . Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic


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PDF TGL2201-EPU TGL2201 MMIC limiter TGL2201-EPU
2012 - MAAL-010528-TR3000

Abstract: x-band power amplifier
Text: MAAL-010528 X-Band Low Noise Amplifier 8 - 12 GHz Features 1.6 dB Noise Figure Single +4 V Bias @ 60 mA Fully internally matched to 50 Lead-Free 3 mm 16-Lead PQFN Package Halogen-Free "Green" Mold Compound RoHS* Compliant and 260°C Reflow Compatible Rev. V1 Rev. V2 Functional Schematic VDD1 N/C N/C VDD2 N/C N/C 1 N/C N/C Description The MAAL-010528 is a high performance X-band GaAs LNA , housed in a miniature, lead-free 3 mm PQFN surface mount plastic package. This MMIC operates


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PDF MAAL-010528 16-Lead MAAL-010528 S2083 MAAL-010528-TR3000 x-band power amplifier
2013 - x-band power amplifier

Abstract: LNA x-band
Text: MAAL-010528 X-Band Low Noise Amplifier 8 - 12 GHz Features 1.6 dB Noise Figure Single +4 V Bias @ 60 mA Fully internally matched to 50 Lead-Free 3 mm 16-Lead PQFN Package Halogen-Free "Green" Mold Compound RoHS* Compliant and 260°C Reflow Compatible Rev. V1 Rev. V3 Functional Schematic VDD1 N/C N/C VDD2 N/C N/C 1 N/C N/C Description The MAAL-010528 is a high performance X-band GaAs LNA , housed in a miniature, lead-free 3 mm PQFN surface mount plastic package. This MMIC operates


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PDF MAAL-010528 16-Lead MAAL-010528 S2083 x-band power amplifier LNA x-band
2006 - Not Available

Abstract: No abstract text available
Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output ports are DC decoupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. Features 7.0GHz - 11.0GHz Operating


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PDF FMA219 FMA219 14dBm FMA219-000 FMA219-000SQ FMA219-000S3 DS121119
x-band mmic lna

Abstract: x-band microwave fet TGA2511 x-band mmic
Text: wideband LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications , power shall not exceed PD. 3/ Unit for Id is A 4/ Total current for the entire MMIC . 5 , ) GND is back side of MMIC Bond pad #1 Bond pad #2, 3, 12, 11 Bond pad #4, 10 Bond pad #5, 9 Bond , 0.100 (0.004 x 0.004) 0.100 x 0.200 (0.004 x 0.008) GaAs MMIC devices are susceptible to damage from , Bias: Vd = 5V (Id = ~80mA) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge


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PDF TGA2511 TGA2511 6-14GHz, TGA2511provides x-band mmic lna x-band microwave fet x-band mmic
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