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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TMPM3HMFZAFG TMPM3HMFZAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFYAFG TMPM3HPFYAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1414-0.40-001
TMPM3HMFDAFG TMPM3HMFDAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFDAFG TMPM3HPFDAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1414-0.40-001
TMPM3HNFYAFG TMPM3HNFYAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002
TMPM3HQFYAFG TMPM3HQFYAFG ECAD Model Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002

x-band mmic core chip Datasheets Context Search

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x-band mmic core chip

Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: ) multi-function control MMIC , using the MSAG® process, as a low-cost core controller chip for phased array , variations. No attempt was made to minimize the chip area for the core control MMIC . To do so could , microwave control MMIC resulted in an RF spec yield of over 90%.making this chip extremely desirable for , result in significant savings at the array level. The MMIC chip contribution to the module cost may be , general-purpose 7-12GHz X-band control MMIC ( core controller) for gain, NF, P1dB and TOI. A block diagram and


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2002 - x-band mmic core chip

Abstract: x-band MMIC MASWGM0001-DIE mmic core chip RO-P-DS-3057 MA03502
Text: Double-Throw Switch 4/6 MASWGM0001-DIE R/T MA03502 X-BAND MMIC CONTROL CHIP P2 R P3 T , X-Band control MMIC . These two chips form the core of a transceiver module. Mode Control Logic , Information Features 2.0-14.0 GHz GaAs MMIC Switch 2.0-14.0 GHz Operation 3 dB Insertion , . Used in conjunction with the MA03502 or the MA03503, X-Band control MMICs, form the core of a , MASWGM0001-DIE Mechanical Information Chip Size: 2.946 x 1.284 x 0.075 mm (116 x 51 x 3 mils) 1.556mm


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PDF RO-P-DS-3057 MASWGM0001-DIE MASWGM0001-Die MA03502 MA03503, x-band mmic core chip x-band MMIC mmic core chip
x-band mmic core chip

Abstract: CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
Text: diagram. CORE CHIP RX OUT DRIVER + HPA chip and a set of high efficiency high power , CORE CHIP RX OUT PHASE SHIFT (°) ­60 ­110 ­160 ­210 ­260 ­310 Pout (dBm) , PAE (%) & , CHC3014, whose schematic is presented in Figure 2, is a 22.7 mm2 transmit receive core chip including a , attenuation error and ±2° of phase variation. The core chip performances are presented in Figures 3 and 4 , Semiconductors (UMS) has a considerable heritage in the design and production of MMIC solutions for space and


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PDF com/28495-74 x-band mmic core chip CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
X-band amplifier

Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5kΩ) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , [mA] P1dB 36 EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER , -Tone Total Output Pow er [dBm ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN


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PDF EMM5068X EMM5068X X-band amplifier 462 008 0004 00 AF
2006 - EMM5068X

Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: X-Band Power Amplifier MMIC CHIP OUTLINE Unit : µm VGG2 VDD3 0 860 VDD5 1345 2905 , EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5k) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD=6V, IDD(DC)=1500m A


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PDF EMM5068X EMM5068X X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: inversely with chip area. Furthermore, the assembled yield of MMIC devices is usually higher than , MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the


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x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , chip area. Further, the assembled yield of MMIC devices is usually higher than discrete assemblies , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC , with each microwave device independently


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2007 - MAMFGM0001-DIE

Abstract: x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R MAMFGM0001-DIE000
Text: MAMFGM0001-DIE Control Chip , X-Band T/R 7.0-12.0 GHz Rev C Preliminary Datasheet Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control , digital FETs on a single chip , and polyimide scratch protection for ease of use with automated , and product information. MAMFGM0001-DIE Control Chip , X-Band T/R 7.0-12.0 GHz Rev C


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PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001-DIE x-band mmic x-band power TR MMIC X-band amplifier X-Band T/R
2006 - MAMFGM0001

Abstract: X-Band T/R
Text: Control Chip , X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMFGM0001-DIE , control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , , low-noise, switch and digital FETs on a single chip , and polyimide scratch protection for ease of use with , . Control Chip , X-Band T/R 7.0-12.0 GHz Recommended Operating Conditions2 Characteristic Drain Supply , Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC


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PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001 X-Band T/R
MAMF-000002-DIE000

Abstract: MMIC X-band amplifier x-band mmic x-band power TR 0/MAPS-008342-DIE000
Text: MAMF-000002-DIE000 Control Chip , X-Band T/R 7.0-12.0 GHz Rev A Preliminary Datasheet Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent , digital FETs on a single chip , and polyimide scratch protection for ease of use with automated , and product information. MAMF-000002-DIE000 Control Chip , X-Band T/R 7.0-12.0 GHz Rev A


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PDF MAMF-000002-DIE000 MAMF-000002-DIE000 MMIC X-band amplifier x-band mmic x-band power TR 0/MAPS-008342-DIE000
2007 - x-band mmic

Abstract: x-band power TR 0/MAPS-008342-DIE000
Text: Control Chip , X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the , capability enabling power, low-noise, switch and digital FETs on a single chip , and polyimide scratch , product information. Control Chip , X-Band T/R 7.0-12.0 GHz Recommended Operating Conditions2 , Logic Low Voltage Clock Frequency Thermal Resistance MMIC Base Temperature Symbol VDD VGG VEE VIH VIL


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PDF MAMF-000003-DIE000 MAMF-000003-DIE000 x-band mmic x-band power TR 0/MAPS-008342-DIE000
2014 - Not Available

Abstract: No abstract text available
Text: Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed , products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed , can be biased using a direct gate voltage or using an on chip gate bias circuit providing an , 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of


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PDF 41dBm MAAP-015030 41dBm, com/multimedia/home/20140428005116/en/
2007 - x-band mmic phase

Abstract: x-band power TR
Text: Control Chip , X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control of , power, low-noise, switch and digital FETs on a single chip , and polyimide scratch protection for ease of , product information. Control Chip , X-Band T/R 7.0-12.0 GHz Recommended Operating Conditions2 , Logic Low Voltage Clock Frequency Thermal Resistance MMIC Base Temperature Symbol VDD VGG VEE VIH VIL


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PDF MAMF-000004-DIE000 MAMF-000004-DIE000 x-band mmic phase x-band power TR
2007 - x-band power TR

Abstract: No abstract text available
Text: Control Chip , X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , , low-noise, switch and digital FETs on a single chip , and polyimide scratch protection for ease of use with , . Control Chip , X-Band T/R 7.0-12.0 GHz Recommended Operating Conditions2 Characteristic Drain Supply , Frequency Thermal Resistance MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC TB Min 4.8 -5.2 -5.2


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PDF MAMF-000002-DIE000 MAMF-000002-DIE000 x-band power TR
MAMF-000004-DIE000

Abstract: x-band mmic x-band mmic phase x-band power TR 0/MAPS-008342-DIE000
Text: MAMF-000004-DIE000 Control Chip , X-Band T/R 7.0-12.0 GHz Rev A Preliminary Datasheet Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter , -000004-DIE000 is a 3-port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter , , low-noise, switch and digital FETs on a single chip , and polyimide scratch protection for ease of use with , www.macom.com for additional data sheets and product information. MAMF-000004-DIE000 Control Chip , X-Band


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PDF MAMF-000004-DIE000 MAMF-000004-DIE000 x-band mmic x-band mmic phase x-band power TR 0/MAPS-008342-DIE000
MAMFGM0001-DIE

Abstract: x-band mmic x-band power TR
Text: MAMFGM0001-DIE Control Chip , X-Band T/R 7.0-12.0 GHz Rev B Preliminary Datasheet Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter and , transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the independent control , digital FETs on a single chip , and polyimide scratch protection for ease of use with automated , sheets and product information. MAMFGM0001-DIE Control Chip , X-Band T/R 7.0-12.0 GHz Rev B


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PDF MAMFGM0001-DIE MAMFGM0001-DIE000 MAMFGM0001-DIE x-band mmic x-band power TR
x-band mmic phase

Abstract: MAMF-000003-DIE000 x-band mmic
Text: MAMF-000003-DIE000 Control Chip , X-Band T/R 7.0-12.0 GHz Rev A Preliminary Datasheet Features Highly Integrated MMIC Dual Path, Transmit/Receive Operation 6-Bit Phase Shifter , -000003-DIE000 is a 3-port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter , power, low-noise, switch and digital FETs on a single chip , and polyimide scratch protection for ease , -000003-DIE000 Control Chip , X-Band T/R 7.0-12.0 GHz Rev A Preliminary Datasheet Recommended Operating


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PDF MAMF-000003-DIE000 MAMF-000003-DIE000 x-band mmic phase x-band mmic
2014 - Not Available

Abstract: No abstract text available
Text: Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of , millimeter wave products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a , power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit , stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output


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PDF 41dBm MAAP-015030 41drized
2006 - Not Available

Abstract: No abstract text available
Text: Control Chip , X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the , capability enabling power, low-noise, switch and digital FETs on a single chip , and polyimide scratch , product information. Control Chip , X-Band T/R 7.0-12.0 GHz Recommended Operating Conditions2 , Preliminary Datasheet Max 5.2 -4.8 -4.8 5.0 0.4 Unit V V V V V MHz °C/W 170 Note 3 ºC ºC MMIC Base


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PDF MAMF-000004-DIE000 MAMF-000004-DIE000
2002 - x-band power amplifier

Abstract: x-Band High Power Amplifier x-band mmic x-band HPA mmic MAAPGM0024-DIE MMIC X-band amplifier
Text: Information Features 7.5-10.5 GHz GaAs MMIC HPA 7.5 to 10.5 GHz Operation 6 Watt Saturated , Drain Current IDD < 2.5 A 1. TB = MMIC Base Temperature 2.5 :1 2/6 RO-P-DS-3010 - , -1.6 V Input Power PIN 23.0 dBm Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C - 5.1 °C/W * VDD * IDQ , . RO-P-DS-3010 - - 6W X-Band Power Amplifier 5/6 MAAPGM0024-DIE Mechanical Information Chip


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PDF RO-P-DS-3010 MAAPGM0024-DIE MAAPGM0024-Die x-band power amplifier x-Band High Power Amplifier x-band mmic x-band HPA mmic MMIC X-band amplifier
2002 - MA03501D

Abstract: x-band mmic
Text: Serial Input Gain/Phase Control MMIC 6/7 MA03501D Mechanical Information Chip Size: 5.974 x , V 1.00 MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature


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PDF MA03501D MA03501D x-band mmic
2006 - Not Available

Abstract: No abstract text available
Text: Control Chip , X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , control MMIC . The on-chip serial-to-parallel converter enables the independent control of the 6-bit phase , , low-noise, switch and digital FETs on a single chip , and polyimide scratch protection for ease of use with , . Control Chip , X-Band T/R 7.0-12.0 GHz Recommended Operating Conditions2 Characteristic Drain Supply , Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol VDD VGG VEE VIH VIL FCLK JC


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PDF MAMF-000002-DIE000 MAMF-000002-DIE000
2006 - Not Available

Abstract: No abstract text available
Text: Control Chip , X-Band T/R 7.0-12.0 GHz Features Highly Integrated MMIC MAMF , -port, dual path transmit/ receive control MMIC . The on-chip serial-to-parallel converter enables the , capability enabling power, low-noise, switch and digital FETs on a single chip , and polyimide scratch , product information. Control Chip , X-Band T/R 7.0-12.0 GHz Recommended Operating Conditions2 , Logic Low Voltage Clock Frequency Thermal Resistance Junction Temperature MMIC Base Temperature Symbol


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PDF MAMF-000003-DIE000 MAMF-000003-DIE000
2002 - x-band power amplifier

Abstract: x-band mmic x-Band High Power Amplifier MAAPGM0030 MAAPGM0030-DIE
Text: Information Features 5.0-9.0 GHz GaAs MMIC Amplifier 5.0-9.0 GHz Operation 1 Watt Saturated , NF 8 dB 2nd Harmonic 2f -20 dBc 3rd Harmonic 3f -35 dBc 1. TB = MMIC , dBm Junction Temperature Tj 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C -25.5 °C/W * VDD * IDQ Operating Instructions This device is , -3021 - - 1W C/X-Band Power Amplifier 5/6 MAAPGM0030-DIE Mechanical Information Chip Size


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PDF RO-P-DS-3021 MAAPGM0030-DIE MAAPGM0030-Die x-band power amplifier x-band mmic x-Band High Power Amplifier MAAPGM0030
2002 - x-band MMIC

Abstract: X band 5-bit phase shifter MA03501D MMIC X-band amplifier x-band mmic phase
Text: Gain/Phase Control MMIC 6/7 MA03501D Mechanical Information Chip Size: 5.974 x 3.973 x 0.075 , RO-P-DS-3004 - - MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature


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PDF RO-P-DS-3004 MA03501D MA03501D x-band MMIC X band 5-bit phase shifter MMIC X-band amplifier x-band mmic phase
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