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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

x-band microwave fet Datasheets Context Search

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x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: microwave and digital FETS can be fabricated on a single MMIC, with each microwave device independently , of catalytic metals result in a highly reliable FET without susceptibility to hydrogen poisoning , manufacturability of the MSAG process is due to several factors, but principally the repeatability of the FET , 3. Integration Leverage The ability to combine microwave power, low-noise, and switching devices , Article for MICROWAVE PRODUCT DIGEST Second Draft, April 18, 2000 Page 2 of 4 complex circuit


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x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: layers. Both microwave and digital FETS can be fabricated on a single MMIC, with each microwave device , gate structure and the absence of catalytic metals result in a highly-reliable FET , without , manufacturability of the MSAG process is due to several factors, but principally the repeatability of the FET , , which avoids the higher cost of www.mpdigest.com MICROWAVE PRODUCT DIGEST Figure 3. (above) 12 , Diagram MICROWAVE PRODUCT DIGEST www.mpdigest.com MAY 2000 epitaxial wafers. Although the


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high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Text: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers (HPAs) to , will present loadline from the point of view of a working level GaAs MESFET microwave power MMIC , Drive Roanoke, VA 24019 FET as an ideal voltage controlled current source which can sink a maximum


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PDF 30FETs 20FETs 12-Watt high power fet amplifier schematic GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
x-band mmic core chip

Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: deliverables have been developed using the MSAG® process. Microwave FET structures optimized for power (5A , microwave control MMIC resulted in an RF spec yield of over 90%.making this chip extremely desirable for , reliability as goals. Process 5 is the current high-performance microwave version of the MSAG® process and , parallel feedback amplifiers using a 300um (4x75um) or 625um (8x78um), respectively, 5A FET as the active , components and is implemented in direct-coupled FET logic (DCFL). This approach provides high performance


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Not Available

Abstract: No abstract text available
Text: applications such as an X-band radar transmitter or a microwave communication transmitter. The TGA8286-EPU is , In s t r u m e n t s Microwave G aA s Products Phone: 972 995 8465 Fax: 972 995 4288 Em , Frequency (GHz) * Te x a s In s t r u m e n t s Microwave G aA s Products Phone: 972 995 8465 , possible level. * TEXAS INSTRUMENTS Microwave G aA s Products Phone: 972 995 8465 Fax: 972 , Microwave G aA s Products Phone: 972 995 8465 Fax: 972 995 4288 Em ail: GaAs@ ti.com Web: http


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PDF TGA8286-EPU 17-dB TGA8286-EPU 16-dB trans130
RPX 200

Abstract: No abstract text available
Text: » MICROWAVE £ 760-00401 RPX 6000 Series X-Band Power GaAs FET s High breakdown voltage Stability , 7597221 RAYTHEON CO» MICROWAVE £ 78C 00402 RPX 6000 Seríes X-Band Power GaAs FET s RPX6030 Chip , RAYTTTTöN" COV Raytheon Company Special Microwave Devices Operation v MXCROUJAVE & Bearfoot , respectively, with y 4 to 5 db gain a t 10 GHz. The RPX6000 series of GaAs power FET s features low , properties. In common with all Raytheon power FET s these devices exhibit high breakdown volt ages and


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PDF RPX6000 RPX6030, RPX6033, RPX6035 RPX 200
x-band power amplifier

Abstract: MMIC X-band amplifier
Text: X-band radar transmitter or a microwave communication transmitter. The TGA8286-EPU is supplied in chip , s Microwave G aA s Products Phone: 972 995 8465 Fax: 972 995 4288 Em ail: GaAs@ ti.com , Frequency (GHz) * Te x a s In stru m en ts Microwave G aA s Products Phone: 972 995 , . * TEXAS INSTRUMENTS Microwave G aA s Products Phone: 972 995 8465 Fax: 972 995 4288 Em ail , the world wide web. * TEXAS INSTRUMENTS Microwave G aA s Products Phone: 972 995 8465


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PDF TGA8286-EPU 17-dB TGA8286-EPU 16-dB x-band power amplifier MMIC X-band amplifier
MwT GaAs Device Technology

Abstract: Gunn Diode gunn effect fet dro 10 ghz system on chip x-band x-band dro
Text: MicroWave Technology, Inc. GENERAL INFORMATION MwT's GaAs Device Technology MicroWave , Gallium Arsenide (GaAs) epitaxial material growth and microwave device design and processes. The company , GHz in operation frequencies. The FET devices use germanium-nickel-gold alloys as metal for good , microwave programs. An application note on the Evaluation of Hydrogen Effects on MwT`s FETs is available for review upon request. Channel Temperature (C) MTBF Plot for Mwt GaAs FET Time (Hours


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ely transformers

Abstract: No abstract text available
Text: number of successful monolithic microwave designs, including many first-pass M M IC designs, meeting all , characteristics available from the standard monolithic microwave product family are shown in Figure 1. TYPICAL , range of microwave circuits have been fabricated on GaAs at Tl. Both narrowband double-balanced and , . Narrowband SPDT FET switches have been designed at frequencies ranging from 8 to 16 GHz. Wideband, multipole , materials and processing technologies to improve yields and achieve consistent microwave performance. Tl


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smd transistor M30

Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: experience with a wide range of standard GaAs FET and MMIC components. Generally there are seven GaAs , Power-, Low-noise FET and HEMT (arbitrary gate width); HBT typical design process is shown in Table , Evaporation (DIOM technique) &$' 7RROV 6LPXODWLRQ Self Aligned Gates Microwave Harmonica PC Double Passivation Microwave Harmonica WS Reactive Ion Etching MDS (hp) /D\RXW , Microwave Explorer the possibility to assemble the semiconductor dies in STRATA hermetically


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PDF D-81541 smd transistor M30 siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
1998 - nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM X13769XJ2V0CD00 11-14 RF and Microwave Devices Discrete s Dual Gate MES/MOS FET · Dual , X13769XJ2V0CD00 11-18 RF and Microwave Devices Discrete s Low Noise GaAs/HJ FET (NE) (1/2) Supply , 84A S01 CD-ROM X13769XJ2V0CD00 11-19 RF and Microwave Devices s Low Noise GaAs/HJ FET (NE , X13769XJ2V0CD00 11-20 RF and Microwave Devices Discrete s Power TR./ FET (2SC, NE, NEL, NEM, NES, NEZ , Microwave Devices s Power TR./ FET (2SC, NE, NEL, NEM, NES, NEZ) (3/3) Supply Voltage (V) 6 6 6 10 10 3.5


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
TM 1628 IC

Abstract: MGF2148 1D10101 IC TM 1628
Text: FET > _ 6249829 MITSUBISHI ( D I S C R E T E SC) 9 1D 10102 MGF2148 D FOR MICROWAVE , R FET > _ 6249829 MITSUBISHI ( D I S C R E T E SC) 91 D 10100 M G F214 8 DT'5?-ö7 FOR MICROWAVE POWER AMPLIFIERS DESCRIPTION The M G F 2 1 4 8 is designed for power , MITSUBISHI {DISCRETE SC> M IT S U B IS H I SEM IC O N D U C T O R FET > tí dF| bEHTaa^DDiaioi 4 I MGF2148 9 1 D 10101 D 6249829 MITSUBISHI ( D I S C R E T E SC) FOR MICROWAVE POWER AMPLIFIERS T


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RDX832

Abstract: No abstract text available
Text: "RAYTHEON COi MIC ROWAVE & aytheon company Special Microwave ; Devices Operation Northborough, MA , ual-G ate M ic ro w a v e GaAs FET OUTPUT CHARACTERISTICS · High gain through X-band · R ecessed , GaAs FET designed for AGC amplifier, mixer and switching applications through X-band. Both gates are 5 , 7fl DE | 7 S T 7 5 5 1 00DG3flt. 7 RDX832 Dual-Gate M icrow ave GaAs FET 7597 22 1 RAYTHEON , Attaching The FET chip is fragile and can be easily damaged or destroyed. Handle with extrem e caution


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PDF RDX832
C-Band Power GaAs FET HEMT Chips

Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: Large-signal GaAs FET Amplifier Characteristics," IEEE Transactions on Microwave Theory and Techniques, Vol , Reprinted with permission of MICROWAVE JOURNAL® from the February 2006 issue. © 2006 Horizon House Publications, Inc. T ECHNICAL F EATURE Fig. 1 Physical layout of the 1.8 mm FET with offset vias , saturated drain-source current (IDSS) and device cut-off frequency (T) in order to combine all unit FET , manufacturability. FET Size The design of the MMIC power amplifier starts with the selection of the number of


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viasat

Abstract: x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
Text: issues relating to interference. Microwave Product Digest required typically operate from DC to 2.5 , of size, Figure 3: Passive UltraCMOS FET mixer demonstrates cost, reliability and performance , for FET . designs can be easily transferred between wafer fabs, assuring military customers that , electrostatic discharge performance selection, switching in filter banks, and low noise Microwave Product , oscillator (LO) buffer, which allows very high linear- Microwave Product Digest JANUARY 2009 ity


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PDF com/articles/2008/2008 PE95420) viasat x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
2008 - c9106

Abstract: microwave transceiver doppler microwave transceiver motion DOPPLER microwave transceiver sensitivity X-Band Motion Detector motion microwave DOPPLER 3MHz DOPPLER circuit doppler transceiver DOPPLER circuit
Text: . Description The MDU (Motion Detector Unit) is an X-Band microwave transceiver that utilizes the Doppler , housing. The circuit features a dielectric resonator stabilized FET oscillator, which provides stable , contract. Microwave Solutions pursue a policy of continuous product improvement and reserve the right from , Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 , Frequency 10.515GHz 10.525Ghz 10.535GHz Comments USA FCC Part 15 Indoors Microsemi Microwave


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PDF MDU1420 -86dBm 525GHz 31Hz/m 36deg 72deg C910605 C910603 C910606 515GHz c9106 microwave transceiver doppler microwave transceiver motion DOPPLER microwave transceiver sensitivity X-Band Motion Detector motion microwave DOPPLER 3MHz DOPPLER circuit doppler transceiver DOPPLER circuit
MGF1802

Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE S O 11 DE |ta4TflS^ DOlQDflM ñ MITSUBISHI SEMICONDUCTOR FET > _ 6249829 MITSUBISHI { D I S C R E T E SC) 91D MGF1802 10084 DT-31-25 FOR MICROWAVE POW ER , ^AEI 0010DÖS MITSUBISHI SEMICONDUCTOR FET > MGF1802 6249829 MITSUBISHI ( D I S C R E T E SC)~ 91D 10085 D FOR MICROWAVE POW ER AMPLIFIERS T Y P IC A L C H A R A C T E R IS T IC S (Ta=2 5 'C) ^add v , MITSUBISHI {DISCRETE S O ~~ïï DE ODlDDflb 1 I - MITSUBISHI SEMICONDUCTOR FET > MGF1802


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PDF MGF1802 DT-31-25 MGF1802, MGF1802
2008 - MDU1020

Abstract: microwave transceiver motion DOPPLER X-Band Motion Detector microwave transceiver sensitivity collision avoidance doppler microwave transceiver MDU1020 Series microwave antenna transceiver 10.525
Text: Meet FCC Part 15 reqts. Description The MDU (Motion Detector Unit) is an X-Band microwave , housing. The circuit features a dielectric resonator stabilized FET oscillator, which provides stable , contract. Microwave Solutions pursue a policy of continuous product improvement and reserve the right from , Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 , Plastic Housing Copyright 2008 Rev: 2009-02-10 Microsemi Microwave Products 75 Technology


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PDF MDU1020 reliabilit10 687GHz 31Hz/m MDU1020 C900505 C900503 C900506 515GHz 525Ghz microwave transceiver motion DOPPLER X-Band Motion Detector microwave transceiver sensitivity collision avoidance doppler microwave transceiver MDU1020 Series microwave antenna transceiver 10.525
x-band transistor

Abstract: No abstract text available
Text: Noise Microwave GaAs FET · Low Noise - 2.5 Typical at 10 GHz · All Gold Bonding Pads · Available with , 0 0 0 3 f l cl 2 RLX835 Low Noise M icrow ave GaAs FET _ . . . 7597221 RAYTHEON CO, MICROWAVE C , RAYTHEO N CO-. MICR OW AVE & RàÿthëoHCompany Special Microwave : Devices Operation . 7f i , during bonding and the machine should be well grounded. Die Attaching The FET chip is fragile and can be , a blanket of forming gas. \ \ \\ \ Available Packages RAYTHEON CO-, MICROWAVE & 7fl


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PDF RLX835 x-band transistor
2008 - doppler microwave transceiver

Abstract: microwave transceiver DOPPLER 10.525 microwave transceiver sensitivity 10.525 ghz transceiver motion DOPPLER doppler transceiver x-band microwave fet motion microwave DOPPLER x-band accuracy
Text: X-Band microwave transceiver that utilizes the Doppler shift phenomenon to "sense" motion. The unit , stabilized FET oscillator, which provides stable operation over a broad temperature range in either CW or , description of the product and shall not form part of any contract. Microwave Solutions pursue a policy of , products. Copyright 2008 Rev: 2009-02-10 Microsemi Microwave Products 75 Technology Drive , Suitable for US FCC Part 15 "Outdoor" intermittent applications Microsemi Microwave Products 75


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PDF MDU1020 36deg 72deg 15grams 31Hz/m MDU1020 C900662 525Ghz doppler microwave transceiver microwave transceiver DOPPLER 10.525 microwave transceiver sensitivity 10.525 ghz transceiver motion DOPPLER doppler transceiver x-band microwave fet motion microwave DOPPLER x-band accuracy
2008 - X-Band Motion Detector

Abstract: motion DOPPLER microwave transceiver doppler microwave transceiver motion microwave DOPPLER UBR100 flange c9505 doppler transceiver UBR100 mdu1900
Text: Description The MDU (Motion Detector Unit) is an X-Band microwave transceiver that utilizes the Doppler , dielectric resonator stabilized FET oscillator, which provides stable operation over a broad temperature , the product and shall not form part of any contract. Microwave Solutions pursue a policy of , products. Copyright 2008 Rev: 2009-02-10 Microsemi Microwave Products 75 Technology Drive , a separate receiver as one end of a microwave link. All the units employ low cost surface mount


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PDF MDU19xx 587GHz 31Hz/m MDU1900 C950503 C950501 525GHz 587GHz MDU1910 C960503 X-Band Motion Detector motion DOPPLER microwave transceiver doppler microwave transceiver motion microwave DOPPLER UBR100 flange c9505 doppler transceiver UBR100 mdu1900
2000 - 676.160

Abstract: x-band microwave fet x-band power amplifier
Text: microwave communication transmitter. The TGA8286-EPU is supplied in chip form and is engineered for high , possible level. These ratings apply to each individual FET . TriQuint Semiconductor Texas Phone: (972)994 , . EQUIVALENT SCHEMATIC FET 1 = 2.4mm HFET, 2 x 1200um HFETs FET 2 = 9.6mm HFET, 8 x 1200um HFETs TaN


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PDF TGA8286-EPU TGA8286-EPU effectivel00pF 676.160 x-band microwave fet x-band power amplifier
2003 - NE70083

Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are , . Designing power FET matching circuits differs in approach from low noise amplifiers for a number of reasons. First, the physical size of these power FET chips is large enough to require a distributed analysis , different approach is used. A single cell of the power FET is characterized with little error in a 50


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PDF AN-PF-1007 NE430, NE345L, NE372 NE70083 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
1996 - NE70083

Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are , . Designing power FET matching circuits differs in approach from low noise amplifiers for a number of reasons. First, the physical size of these power FET chips is large enough to require a distributed analysis , different approach is used. A single cell of the power FET is characterized with little error in a 50


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PDF AN-PF-1007 NE430, NE345L, NE372 24-Hour NE70083 NE372800 AN83901 NE71083 Matching Transformer - line matching transformed AN-PF-1007
1999 - Celeritek, CTR

Abstract: Celeritek converter 20 GHz MMIC X-band amplifier down converter MHz-Band x-band microwave fet celeritek ctr DSA003181
Text: of the major suppliers of commercial communication microwave equipment to OEM suppliers. The company's in-house GaAs FET and MMIC capabilities, along with extensive amplifier products, provide the


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PDF WR-42 Celeritek, CTR Celeritek converter 20 GHz MMIC X-band amplifier down converter MHz-Band x-band microwave fet celeritek ctr DSA003181
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