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1461850100 1461850100 ECAD Model Molex MULTI-BAND CELLULAR&WIFI 100MM
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x-band MMIC limiter Datasheets Context Search

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2002 - x-band limiter

Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Text: RO-P-DS-3002 MA01502D X-Band Limiter /Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , protecting 10 Watt limiter . This product is fully matched to 50 ohms on both the input and output. Each , 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB - 2/6 RO-P-DS-3002 - - X-Band 10W Limiter / 2-stage LNA MA01502D Maximum Operating Conditions 1


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PDF RO-P-DS-3002 MA01502D MA01502D x-band limiter x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter 6 ghz amplifier 10w
2002 - x-band limiter

Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Text: V 1.00 MA01502D X-Band Limiter /Low Noise Amplifier 8.5 ­12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , , receiver protecting 10 Watt limiter . This product is fully matched to 50 ohms on both the input and , W 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB V1.00 X-Band 10W Limiter / 2-stage LNA 2/6 MA01502D Maximum Operating Conditions 1 Parameter


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PDF MA01502D MA01502D x-band limiter MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
2002 - x-band limiter

Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
Text: RO-P-DS-3003 - - MA01503D X-Band Limiter /Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , ) PRF 10 W 1. TB = MMIC Base Temperature 2/7 RS-O-P-DS-3003 - - X-Band 10W Limiter / 3 , protecting 10 Watt limiter . This product is fully matched to 50 ohms on both the input and output. Each , Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base


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PDF RO-P-DS-3003 MA01503D MA01503D x-band limiter x-band mmic LNA x-band MMIC limiter band Limiter
2002 - x-band limiter

Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Text: V 1.00 MA01503D X-Band Limiter /Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , ) PRF 10 W 1. TB = MMIC Base Temperature V1.00 X-Band 10W Limiter / 3-stage LNA 2/7 , protecting 10 Watt limiter . This product is fully matched to 50 ohms on both the input and output. Each , 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150


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PDF MA01503D MA01503D x-band limiter x-band mmic band Limiter LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Not Available

Abstract: No abstract text available
Text: Product Data Sheet November 15, 2006 Wideband Dual Stage VPIN Limiter TGL2201 Key Features • • • • • • • 3-25 GHz Passive, High Isolation Limiter Low Loss < 0.5 dB , November 15, 2006 TGL2201 High Isolation Limiter Assembly RF In RF Out DC Schematic , Data Sheet November 15, 2006 TGL2201 Mechanical Drawing GaAs MMIC devices are susceptible to , . Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic


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PDF TGL2201
2003 - x-band limiter

Abstract: x-band mmic lna LNA x-band TGL2201
Text: Product Data Sheet November 15, 2006 Wideband Dual Stage VPIN Limiter TGL2201 Key Features · · · · · · · 3-25 GHz Passive, High Isolation Limiter Low Loss < 0.5 dB , X-band Good , Data Sheet November 15, 2006 TGL2201 High Isolation Limiter Assembly RF In RF Out DC , 3 Product Data Sheet November 15, 2006 TGL2201 Mechanical Drawing GaAs MMIC devices , . Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic


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PDF TGL2201 x-band limiter x-band mmic lna LNA x-band TGL2201
directional coupler chip 8 GHz

Abstract: x-band limiter electromagnetic pulse generator x-band mmic lna 5310 MMIC limiter band Limiter circulator monolithic "electromagnetic pulse" electromagnetic pulse
Text: power limiter /LNA MMIC is shown in Figure 1. Figure 2 shows the photograph of the twostage balanced , the commercially available M/A-COM limiter /LNA MMIC [1]. This limiter /LNA has an operating bandwidth , . MA01502D, a commercially available C/X-band integrated LNA/ Limiter . MMIC size: 4.6 ×3.1 mm. and they were , An Examination of Recovery Time of an Integrated Limiter /LNA Jim Looney, David Conway, and Inder , military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are


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2003 - TGL2201

Abstract: MMIC limiter TGL2201-EPU
Text: Advanced Product Information March 7, 2003 Wideband Dual Stage VPIN Limiter TGL2201-EPU Key Features · · · · · · · 3-25 GHz Passive, High Isolation Limiter Low Loss < 0.5 dB , Information March 7, 2003 TGL2201-EPU High Isolation Limiter Assembly RF In RF Out DC Schematic , Product Information March 7, 2003 TGL2201-EPU Mechanical Drawing GaAs MMIC devices are susceptible , . Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic


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PDF TGL2201-EPU TGL2201 MMIC limiter TGL2201-EPU
2004 - FMM5061VF

Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
2005 - EMM5068VU

Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES High Output Power: Pout , =50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that , 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs , /EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD , Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT


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PDF ES/EMM5068VU EMM5068VU x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
X-band amplifier

Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5kΩ) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , [mA] P1dB 36 EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER , -Tone Total Output Pow er [dBm ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN


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PDF EMM5068X EMM5068X X-band amplifier 462 008 0004 00 AF
2006 - EMM5068X

Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for , -111A(C=100pF, R=1.5k) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD=6V, IDD(DC)=1500m A , ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF EMM5068X EMM5068X X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
x-band mmic core chip

Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG® Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase , . A discussion of the merits of multifunction MMIC integration using MSAG® Process 5 will be , success. The X-band control MMIC designed using the MSAG® process and following the outlined design , microwave control MMIC resulted in an RF spec yield of over 90%.making this chip extremely desirable for


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2004 - FMM5061VF

Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB 36 FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF FMM5061 x-Band High Power Amplifier ED-4701
2004 - Not Available

Abstract: No abstract text available
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , mA dB dB 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT , FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage


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PDF FMM5061VF FMM5061VF
2002 - MA03501D

Abstract: x-band mmic
Text: V 1.00 MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature V1.00 X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical Characteristics


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PDF MA03501D MA03501D x-band mmic
2005 - x-band mmic

Abstract: No abstract text available
Text: FMA411 X-BAND MMIC · PERFORMANCE 8.5 ­ 14.0 GHz Operating Bandwidth 2.6 dB Noise Figure 18 dB , pHEMT low-noise MMIC amplifier designed for use over the 8.5 to 14.0 GHz bandwidth. The amplifier , /semis Revised: 11/03/05 Email: sales@filcsi.com FMA411 X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1 , X-BAND MMIC · MECHANICAL OUTLINE: Notes: 1) All units are in microns, unless otherwise specified , FMA411 X-BAND MMIC · ASSEMBLY / BONDING DIAGRAM (50% / 75% BIAS SETTING): Phone: +1 408


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PDF FMA411 FMA411 x-band mmic
2002 - x-band mmic

Abstract: DA10 DA11 MA03503D
Text: V 1.00 MA03503D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Parallel Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , shifter/ attenuator/buffer amplifier MMIC . The on-chip driver circuitry allows for control of the 6 phase , dB 1. TB = MMIC Base Temperature V1.00 X-Band Parallel Input Gain/Phase Control MMIC 2/7 , additional data sheets and product information. V1.00 X-Band Parallel Input Gain/Phase Control MMIC


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PDF MA03503D MA03503D x-band mmic DA10 DA11
2002 - x-band MMIC

Abstract: X band 5-bit phase shifter MA03501D MMIC X-band amplifier x-band mmic phase
Text: RO-P-DS-3004 - - MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature RO-P-DS-3004 - - X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical


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PDF RO-P-DS-3004 MA03501D MA03501D x-band MMIC X band 5-bit phase shifter MMIC X-band amplifier x-band mmic phase
x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device , realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB


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x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC , with each microwave device independently , . Cost Drivers Yield is the prime MMIC cost driver. MSAG yields, even for very complex chips, are


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2002 - MAALGM0002-DIE

Abstract: X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
Text: 8.0-12.0 GHz GaAs MMIC Amplifier Features 2.3 dB Noise Figure 8.0-12.0 GHz Operation , 23 dBm 1. TB = MMIC Base Temperature - 2/6 RO-P-DS-3061 - - X-Band LNA , 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150 , MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Low thermal conductivity silver epoxies are acceptable for die attach of this MMIC . Follow the manufacturer's instructions


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PDF RO-P-DS-3061 MAALGM0002-DIE MAALGM0002-DIE X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
x-band mmic lna

Abstract: x-band mmic LNA x-band FMA219BF FMA219 MIL-HDBK-263 bc 408 equivalent LNA 9GHz
Text: PRELIMINARY · X-BAND LNA MMIC PERFORMANCE 7.0 ­ 11.0 GHz Operating Bandwidth 1.5 dB , -stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The , Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC ABSOLUTE , before the output stage. The aggregate MMIC thermal resistivity is approximately 175°C/W. · , /semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY · FMA219 X-BAND LNA MMIC


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PDF FMA219 FMA219 x-band mmic lna x-band mmic LNA x-band FMA219BF MIL-HDBK-263 bc 408 equivalent LNA 9GHz
2004 - X-band lna

Abstract: x-band mmic lna FMA219 LNA 9GHz
Text: X-BAND LNA MMIC · DESCRIPTION AND APPLICATIONS The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a , Dissipation Gain Compression 1 FMA219 X-BAND LNA MMIC Symbol VDD IDD PIN TSTG PTOT Comp. 2 2 Test , will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is , :// www.filcs.com Revised: 8/16/04 Email: sales@filcsi.com PRELIMINARY FMA219 X-BAND LNA MMIC ·


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PDF FMA219 FMA219 11GHz X-band lna x-band mmic lna LNA 9GHz
2002 - MAAPGM0021-DIE

Abstract: x-band power amplifier x-band mmic MMIC X-band amplifier
Text: RO-P-DS-3012 - - MAAPGM0021-DIE 2W C/X-Band Power Amplifier 4.5­9.0 GHz Preliminary Information Features 4.5-9.0 GHz GaAs MMIC Amplifier 4.5 to 9.0 GHz Operation 2 Watt Saturated , NF 9 dB 2nd Harmonic 2f -20 dBc 3rd Harmonic 3f -45 dBc 1. TB = MMIC , TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = , typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80


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PDF RO-P-DS-3012 MAAPGM0021-DIE MAAPGM0021-Die x-band power amplifier x-band mmic MMIC X-band amplifier
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