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Part Manufacturer Description Datasheet Download Buy Part
LTC1531CSW#TRPBF Linear Technology IC COMP ISOLATED SLF-PWRD 28SOIC
LT1227CJ8 Linear Technology IC OP-AMP, 10000 uV OFFSET-MAX, 140 MHz BAND WIDTH, CDIP8, Operational Amplifier
LM118MJ8 Linear Technology IC OP-AMP, 4000 uV OFFSET-MAX, 15 MHz BAND WIDTH, CDIP8, Operational Amplifier
LT1125AMJ8 Linear Technology IC OP-AMP, 90 uV OFFSET-MAX, 12.5 MHz BAND WIDTH, CDIP14, Operational Amplifier
LT1127MJ14 Linear Technology IC QUAD OP-AMP, 140 uV OFFSET-MAX, 45 MHz BAND WIDTH, CDIP14, Operational Amplifier
LT1213ACJ8 Linear Technology IC DUAL OP-AMP, 400 uV OFFSET-MAX, 28 MHz BAND WIDTH, CDIP8, Operational Amplifier

x-band MICROSTRIP isolators Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BENDIX bnc

Abstract:
Text: C designs are available. Amplifiers operating at 1,000 MHz or higher include internal isolators to protect the amplifier circuitry for open or shorted load conditions. Isolators and Low Pass


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2010 - MAAP-009748-000000

Abstract:
Text: physical area. The RF input and output terminals are microstrip to allow the module to be directly connected to external microstrip circuitry such as divider and combiner networks. The base-plate has four , 75g typ. 50mm x 75mm x 17mm Microstrip Side entry 3-pin header-Supplies Side entry SMB-Pulse Gating


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PDF MAAP-009748-000000 MAAP-009748-000000 X-band radar module
1988 - HSCH-5318

Abstract:
Text: Broadband Microstrip Mixer Design ­ The Butterfly Mixer Application Note 976 Introduction In , the application of this matching technique to the design and construction of a microstrip mixer using , line where r is correct. However, when the angle is small, the stub is very close to a microstrip stub, so it seems logical to use the microstrip expression[3] eff = r + 1 r ­ 1 + (1 + 10 h/w)-1 , lines. Problems in realizing these lines in microstrip circuits may be avoided by using radial stubs


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PDF HSCH-5318 ROGERS DUROID
Not Available

Abstract:
Text: 37bfl522 0013472 0^4 « P L S B Sü GEC PLESSEY SEMICONDUCTORS DC1553/57 SILICON SCHOTTKY X-BAND ZERO BIAS MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky


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PDF 37bfl522 DC1553/57 400mW 300mW DC1553 DC1557 -20dBm)
smd transistor M30

Abstract:
Text: Holes ELECTRICAL DESIGN C (S) Microstrip Lines LAYOUT C (S) Microstrip


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PDF D-81541 smd transistor M30 siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 Infineon automotive semiconductor process technology infineon rf smd package low noise hemt x-band mmic phase
1999 - 5082-2207 diode

Abstract:
Text: Broadband Microstrip Mixer Design ­ The Butterfly Mixer Application Note 976 Introduction In , a microstrip mixer using a 5082-2207 diode (outline C2, Figure 1) for the frequency range from 8 , stub is very close to a microstrip stub, so it seems logical to use the microstrip expression[3] eff , microstrip circuits may be avoided by using radial stubs. An X-band mixer using the 5082-2207 Schottky diode , . 3. M.V. Schneider, " Microstrip Lines for Microwave Integrated Circuits", Bell System Technical


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PDF HSCH-5318 5082-2207 diode rt duroid
Not Available

Abstract:
Text: 37bñSSS 001Ô470 Ell M P L S B Si GEC PL ES SE Y SEMICONDUCTORS DC1510/12/16 SILICON SCHOTTKY X-BAND MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable fo r applications requiring high performance mixers. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky detector


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PDF DC1510/12/16 DC1510 DC1512 DC1516 350mV -20dBm)
x-band waveguide isolators

Abstract:
Text: Phase Shift Isolators to many of Europe's key manufacturers of Radar systems. These units are


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PDF 100mA 6027-8-33PN x-band waveguide isolators high power waveguide isolators high power isolator for radar radar sensor specification microwave isolator racal racal isolator Racal-MESL phaseshift 6027-8-33PN
microwave transceiver

Abstract:
Text: temperature range in either CW or pulsed modes. This module uses two separate microstrip pa:cn antenna arrays


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PDF DR03000 DR03000 microwave transceiver 10.525 ghz transceiver dielectric resonator oscillator doppler microwave transceiver DOPPLER 10.525 ghz DOPPLER circuit DR0300
Not Available

Abstract:
Text: P ^ p i GEC P L E S S E Y DC1510/12/16 SILICON SCHOTTKY X-BAND MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky detector diodes are finding increasing applications in


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PDF DC1510/12/16 300mW DC1510 DC1512 DC1516 350mV
Not Available

Abstract:
Text: P B t i GEC P L E S S E Y DC1553/57 SILICON SCHOTTKY X-BAND ZERO BIAS MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky detector diodes are finding increasing


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PDF DC1553/57 400mW 300mW DC1553 DC1557 100pA -20dBm) 150pA
Not Available

Abstract:
Text: 37bñSES DDlfi4b7 727 « P L S B GEC PLESSEY S E M I C O N D U C T O R S DC1536F/36G SILICON SCHOTTKY X-BAND MICROSTRIP BEAM LEAD MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky


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PDF DC1536F/36G 400mW 300mW DC1536F DC1536G 400mV 10jxA
DC1536G

Abstract:
Text: PH ffl G E C PLESSEY DC1536F/36G SILICON SCHOTTKY X-BAND MICROSTRIP BEAM LEAD MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky mixer diodes are finding increasing applications in


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PDF DC1536F/36G 300mW DC1536F DC1536G 400mV DC1536G
Not Available

Abstract:
Text: Detector Diodes These low barrier N type chip detector diodes are suitable for use in microstrip , suitable for use in microstrip or stripline circuits. These diodes are listed by increasing test frequency


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2009 - diode detector x band

Abstract:
Text: barrier N type chip detector diodes are suitable for use in microstrip applications. They feature , microstrip or stripline circuits. These diodes are listed by increasing test frequency. Model Number


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x-band mmic lna

Abstract:
Text: ASSEMBLY DRAWING Input and output thin film substrates with 50 microstrip transmission lines. Substrate


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PDF FMA219 FMA219 x-band mmic lna x-band mmic FMA219BF LNA x-band bc 408 equivalent LNA 9GHz MIL-HDBK-263
2004 - X-band lna

Abstract:
Text: ASSEMBLY DRAWING Input and output thin film substrates with 50 microstrip transmission lines. Substrate


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PDF FMA219 FMA219 11GHz X-band lna LNA 9GHz x-band mmic lna
A40272

Abstract:
Text: N type chip detector diodes are suitable for use in microstrip applications* They feature , barrier P type chip detector diodes are suitable for use in microstrip or stripline circuits. These diodes


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MA40264-186

Abstract:
Text: suitable for use in microstrip applications. They feature sensitivity, and low 1/f noise. These diodes are , Detector Diodes These low barrier P type chip detector diodes are suitable for use in microstrip or


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PDF 100Kfl MA40264-186 MA40207-120 MA40207 MA40270-135A JD2078 MA40272 MA40108 MA40143 MA40108-137 MA40053
Not Available

Abstract:
Text: Schottky Barrier Packaged and Beam-Lead TEEs For Balanced Mixers up to 18 GHz Features SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING HIGH RELIABILITY CLOSELY MATCHED JUNCTIONS FOR HIGH ISOLATION THREE DIODE BARRIER HEIGHTS ARE AVAILABLE ON REQUEST DEVICES 100% TESTED MINIMUM PARASITICS FOR BROADBAND DESIGNS Each Schottky barrier beam-lead TEE consists of two closely matched diodes connected in , capacitance. Each series is available in three case styles which are compatible with microstrip assembly


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PDF A4E977L-270 ODS-270.
Not Available

Abstract:
Text: suitable for use in microstrip applications. They feature sensitivity, and low 1/f noise. These diodes are , microstrip or stripline circuits. These diodes are listed by increasing test frequency. Specifications @


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x-band limiter diode

Abstract:
Text: Stripline and Microstrip · N egligible Spike L eakage 2.16 (0.08 5) 1 . Ï Ï {0.075) 2 16 10.0851 1.66 , consists of a small diameter wire connected at a right angle to the electric field in a microstrip or


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Not Available

Abstract:
Text: Less than 1 dB in X-band • E asy to Use Package Compatible with Stripline and Microstrip â , to the electric field in a microstrip or stripline circuit. A 10 mA forward current will actuate


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Not Available

Abstract:
Text: 37bô5 22 QQlfl4êO l fc>G « P L S B M GEC PIESSEY SEMICONDUCTORS DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance detectors. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky detector


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PDF DC1514/21/26 DC1514 DC1521 DC1526 350mV
Not Available

Abstract:
Text: P B tiG E C plessey DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance detectors. These diodes can be supplied in matched pairs by the addition of the letter M to the type number or with reverse polarity by the addition of the letter R to the type number. Silicon Schottky detector diodes are finding increasing applications in


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PDF DC1514/21/26 DC1514 DC1521 DC1526 100pA 350mV
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