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x-Band Hemt Amplifier Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract: No abstract text available
Text: MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Main Features  0.25µm GaN HEMT Technology , .) Product Description MECGaNX13 is a GaN HEMT based High Power Amplifier designed by MEC for X-Band , /01/13 Rev. A 18/02/13 MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Main Characteristics , www.mec-mmic.com Rev. B 25/01/13 Rev. A 18/02/13 MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier , MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Gain and Drain Current @ Pin = 24 dBm Vs. Frequency 19


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PDF MECGaNX13 MECGaNX13
2014 - Not Available

Abstract: No abstract text available
Text: MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Main Features  0.25µm GaN HEMT Technology , www.mec-mmic.com Rev. B 25/01/13 Rev. A 12/02/13 MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Main , Rev. B 25/01/13 Rev. A 12/02/13 MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Linear Gain , GaN HEMT Power Amplifier 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 , /01/13 Rev. A 12/02/13 MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier 4,0 3,5 ID0 [A


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PDF MECGaNX27 MECGaNX27
X-band Gan Hemt

Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Text: . 3 4. GaN HEMT Epitaxy , in the microelectronics industry. The capability of Nitronex's GaN HEMT epi wafer technology is , technology in the advancement and adoption of high efficiency power amplifier designs by the commercial , applications. Field plate Source Gate Passivation Drain AlGaN/GaN HEMT High resistivity Si Figure 1. Cross section SEM image of 0.5 m NRF1 field plated AlGaN/GaN HEMT technology. GaN HEMTs have


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PDF AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
smd transistor M30

Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: activities include development of materials, processes, models and circuits on the base of MESFET, HEMT and , demands. 7HFKQRORJ\ 'HVFULSWLRQ 6WDWXV DIOM15 DIOM20 HEMT M30 MESFET with fT > 15 GHz MESFET with fT > 20 GHz Low-cost, up to X-band, high power at low VDS, fT = 30 GHz HEMT with fT up to 45 GHz Millimeter-wave HEMT , large- and small-signal applications up to 90 GHz High-power heterobipolar transistor, fT = 30 GHz production production production HEMT 60 HEMT 110 HBT30


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PDF D-81541 smd transistor M30 siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
2006 - X-band Gan Hemt

Abstract: FMA3015 MIL-HDBK-263 9-GHz
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier . It is suitable for use in communication, instrumentation and electronic warfare applications. The die is fabricated using RFMD's 0.5µm process. 12dB Gain 7.5W Saturated Output Power at 9V pHEMT , RF OUT Si BiCMOS SiGe HBT GaAs pHEMT VG1 Si CMOS VG2 Si BJT GaN HEMT InP HBT


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PDF FMA3015 52mmx3 FMA3015 FMA3015-000 FMA3015-000SQ FMA3015-000S3 DS081118 FMA3015-000SB X-band Gan Hemt MIL-HDBK-263 9-GHz
2007 - X-band Gan Hemt

Abstract: x-Band Hemt Amplifier class e power amplifier AM MODULATOR mechanism X-band AM modulation theory polar modulator TEC2005-07985-C03-01 Cree Microwave
Text: Vdd-to-PM Nonlinearities in a GaN HEMT Class E Power Amplifier J. A. García*, B. Bedia*, R. Merlín*, P , accurately characterizing the Vddto-AM and Vdd-to-PM nonlinearities in a class E power amplifier (PA). Based on GaN HEMT technology, this transmission line switching PA is aimed to be used as modulating stage , nonlinearities in a GaN HEMT class E PA to be employed in a polar transmitting architecture. II. TRANSMISSION , transmission line topology proposed in [6]. A 15W GaN HEMT from Cree was selected, a device conceived for


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PDF CAS-31, X-band Gan Hemt x-Band Hemt Amplifier class e power amplifier AM MODULATOR mechanism X-band AM modulation theory polar modulator TEC2005-07985-C03-01 Cree Microwave
2006 - X-band Gan Hemt

Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier . It is suitable for use in communication, instrumentation and electronic warfare applications. The die is fabricated using RFMD's 0.5µm process. 12dB Gain 7.5W Saturated Output Power at 9V , RF IN Si BiCMOS RF OUT SiGe HBT GaAs pHEMT Si CMOS Si BJT VG1 GaN HEMT VG2


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PDF FMA3015 FMA3015 FMA3015-000 FMA3015-000SQ DS090306 FMA3015-000S3 X-band Gan Hemt 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
2006 - X-band Gan Hemt

Abstract: MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
Text: FMA3010 FMA3010 X-BAND 5 W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier . It is suitable for use in communication, instrumentation and electronic warfare applications. The die is fabricated using RFMD's 0.5m process. 15 dB Gain 5 W Saturated Output Power at 9 V , GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Parameter Min. Specification


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PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090727 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
2006 - X-band Gan Hemt

Abstract: MIL-HDBK-263 fma3010
Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier . It is suitable for use in communication, instrumentation and electronic warfare applications. The die is fabricated using RFMD's 0.5µm process. 15dB Gain 5W Saturated Output Power at 9V pHEMT , OUT SiGe HBT GaAs pHEMT Si CMOS Si BJT VG GaN HEMT InP HBT RF MEMS LDMOS Parameter


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PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090612 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263
2006 - MMIC X-band amplifier

Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features     ï , performance X-Band Gallium Arsenide Monolithic Amplifier . It has a 41dBm PSAT at 9.5GHz and is well suited , Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT


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PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier
2006 - RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966AX Band 10W High Power Amplifier GaAs MMIC RFHA5966A X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated , stage, high efficiency, high performance X-Band Gallium Arsenide Monolithic Amplifier . It has a 41dBm , RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching , GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless


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PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
2006 - X-band Gan Hemt

Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V to +6V if needed. Operating current , particular pad to ground. The amplifier is unconditionally stable over all load states (-45°C to +85°C), and , BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Min. Specification


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PDF FMA246 FMA246 14GHz. 19dBm FMA246-000 FMA246-000SQ FMA246-000S3 DS090309 X-band Gan Hemt A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
2006 - x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V to +6V if needed. Operating current can be , ground. The amplifier is unconditionally stable over all load states (-45 C to +85 C), and conditionally , GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP


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PDF FMA246 FMA246 14GHz. FMA246-000 FMA246-000SQ FMA246-000S3 DS110503 x-Band Hemt Amplifier x-band mmic X-band GaAs pHEMT MMIC Chip
2006 - Not Available

Abstract: No abstract text available
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V to +6V if needed. Operating current , particular pad to ground. The amplifier is unconditionally stable over all load states (-45C to +85C , Block Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Max. 29 150 ±0.6 11 31 195 Â


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PDF FMA246 FMA246 14GHz. FMA246-000SQ FMA246-000 FMA246-000S3 DS110503
7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the , OPERATING PRECAUTIONS GaAs FET and HEMT devices should be carefully handled and operated in order to , and HEMT devices are sensitive to electrostatic discharge. Recommended work station arrangement to , bias. G. OTHERS When the device is attached to amplifier case, thermal conductive grease and , thermal resistance between package and amplifier case. They also cause might poor grounding of the source


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2011 - Not Available

Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor ( HEMT ) based monolithic microwave integrated circuit (MMIC , Frequency of the CMPA5585025F measured inand CMPA5585025F-TB Amplifier Circuit. of the CMPA5585025F measured in CMPA5585025F-TB Amplifier Circuit. VDS = VDS 28 V, = 285 mA = 28 V, I IDS = 285 mA DS 40 Small , : +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CMPA5585025F-TB Demonstration Amplifier Circuit


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F
2004 - GaAs FET chip

Abstract: FLX257XV Eudyna Devices
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 , performance and reliability. Edition 1.4 October 2004 1 FLX257XV GaAs FET & HEMT Chips DRAIN , ) POWER DERATING CURVE 10 FLX257XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 600mA , ) 3 S22 MAG ANG FLX257XV GaAs FET & HEMT Chips CHIP OUTLINE 106 60 106 40


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PDF FLX257XV FLX257XV Symb4888 GaAs FET chip Eudyna Devices
2004 - GaAs FET HEMT Chips

Abstract: FLX257XV
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 , performance and reliability. Edition 1.4 October 2004 1 FLX257XV GaAs FET & HEMT Chips DRAIN , ) POWER DERATING CURVE 10 FLX257XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 600mA , ) 3 S22 MAG ANG FLX257XV GaAs FET & HEMT Chips CHIP OUTLINE 106 60 106 40


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PDF FLX257XV FLX257XV Symb4888 GaAs FET HEMT Chips
2011 - x-Band Hemt Amplifier

Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor ( HEMT ) based monolithic microwave integrated circuit (MMIC , inand CMPA5585025F-TB Amplifier Circuit. of the CMPA5585025F measured in CMPA5585025F-TB Amplifier , : +1.919.869.2733 www.cree.com/wireless CMPA5585025F-TB Demonstration Amplifier Circuit Bill of Materials , CMPA5585025F-TB Demonstration Amplifier Circuit Copyright © 2011-2012 Cree, Inc. All rights reserved. The


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier
2011 - Not Available

Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor ( HEMT ) based monolithic microwave integrated circuit (MMIC , Gain Return Loss vs Frequency of the CMPA5585025F measured inand CMPA5585025F-TB Amplifier Circuit. of the CMPA5585025F measured in CMPA5585025F-TB Amplifier Circuit. VDS = VDS 28 V, = 285 mA = 28 V, I IDS , www.cree.com/wireless CMPA5585025F-TB Demonstration Amplifier Circuit Bill of Materials Designator C1


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F
2011 - CMPA5585025F

Abstract: power transistor gaas x-band CMPA5585025F-TB
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor ( HEMT ) based monolithic microwave integrated circuit (MMIC , CMPA5585025F-TB Amplifier Circuit. of the CMPA5585025F measured in CMPA5585025F-TB Amplifier Circuit. VDS = VDS 28 , CMPA5585025F-TB Demonstration Amplifier Circuit Bill of Materials Designator C1, C3, C7, C8, C10, C13 C2, C4 , -35P-0200-CL1/CL1 CMPA5585025F Qty 6 6 2 2 2 1 1 1 CMPA5585025F-TB Demonstration Amplifier Circuit


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB
2011 - Not Available

Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree's CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor ( HEMT ) based monolithic microwave integrated circuit (MMIC , CMPA5585025F-TB Amplifier Circuit. of the CMPA5585025F measured in CMPA5585025F-TB Amplifier Circuit. VDS = VDS 28 , CMPA5585025F-TB Demonstration Amplifier Circuit Bill of Materials Designator C1, C3, C7, C8, C10, C13 C2, C4 , -35P-0200-CL1/CL1 CMPA5585025F Qty 6 6 2 2 2 1 1 1 CMPA5585025F-TB Demonstration Amplifier Circuit


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PDF CMPA5585025F CMPA5585025F CMPA55 85025F
1998 - FUJITSU XBAND

Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm , FLX257XV GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Total Power , FLX257XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 600mA FREQUENCY (MHZ) 100 500 1000 2000 , length, 25µm Dia Au wire) n=8 (0.2mm length, 25µm Dia Au wire) 3 FLX257XV GaAs FET & HEMT Chips


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PDF FLX257XV FLX257XV FCSI0598M200 FUJITSU XBAND
1998 - fujitsu gaas fet

Abstract: FLX257XV
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) Drain , performance and reliability. Edition 1.3 July 1999 1 FLX257XV GaAs FET & HEMT Chips DRAIN CURRENT , ) POWER DERATING CURVE 10 FLX257XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 600mA , =8 (0.2mm length, 25µm Dia Au wire) 3 Download S-Parameters, click here FLX257XV GaAs FET & HEMT


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PDF FLX257XV FLX257XV FCSI0598M200 fujitsu gaas fet
Not Available

Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|FLX257XV Total Power Dissipation (W) GaAs FET & HEMT Chips 0 50 100 150 2 , FLX257XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, lDS = 600mA FREQUENCY (MHZ) MAG S11 ANG , , 25^im D ia A u w ire) Fujrrsu FLX257XV GaAs FET & HEMT Chips For further inform ation


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PDF FLX257XV FLX257XV FCSI0598M200
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