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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

w2 smd transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 2F1 SMD Transistor

Abstract:
Text: (dB) f=2GHz 1.5 1.3 1.3 IP3, using bypassing to improve it Figure 1: transistor Double , carriers with a small offset in frequency. Due to transistor nonlinearities, these two carriers generate , product C Out BFG4xx the base-emitter and collector-emitter voltages of a transistor used in an , should be smaller than 25 percent of the input impedance of the transistor at a particular carrier spacing. In case of a BFG520 (fourth generation wideband transistor ) the following calculation is valid


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PDF KV96-157 BFG410W BFG425W, BFG410W BFG425W BFG425W. BFG400W 2F1 SMD Transistor 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating smd transistor w2 BFG425W 2 GHz LNA BFG425W APPLICATION BFG425
2007 - transistor 2N2222 SMD

Abstract:
Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 - 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , Semiconductors UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6 , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor Table 8. RF gain grouping f1 = 894


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PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor ACPR1980 w2 smd transistor
2007 - capacitor 2200 uF

Abstract:
Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 - 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and CDMA base , June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6 , 22 June 2007 3 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor


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PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 78L08 2n2222 smd transistor
2013 - BDS3/3/4.6-4S2

Abstract:
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , -25 WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z BLF6G38S-25 transistor equivalent table
2008 - 30RF35

Abstract:
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics , 12 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 7.2 NXP


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 smd transistor equivalent table VJ1206Y104KXB
2012 - Not Available

Abstract:
Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various , NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal , Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull


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PDF BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P 2425M7LS250P
2012 - Not Available

Abstract:
Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 - 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various , . NXP Semiconductors BLF2425M7L(S)250P Power LDMOS transistor 2. Pinning information Table 2 , BLF2425M7L(S)250P Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal , - 6 September 2012 3 of 11 NXP Semiconductors BLF2425M7L(S)250P Power LDMOS transistor


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PDF BLF2425M7L250P; BLF2425M7LS250P 2002/95/EC, BLF2425M7L250P 2425M7LS250P
2013 - Not Available

Abstract:
Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 - 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 , BLF2425M7L(S)250P Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal , 26 February 2013 3 of 11 NXP Semiconductors BLF2425M7L(S)250P Power LDMOS transistor


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PDF BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P
2013 - Not Available

Abstract:
Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial , NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , reserved. 2 of 11 BLF2425M7L(S)250P NXP Semiconductors Power LDMOS transistor 5. Thermal , Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured


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PDF BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P
2009 - transistor 9575

Abstract:
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 - 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , ) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power , NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aah475 24 60 D D (%) Gp (dB) 22


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
2010 - Not Available

Abstract:
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base , substances (RoHS) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications , BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5 , BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aah475 24


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN
2010 - BLF6G10LS-160RN

Abstract:
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 - 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol , Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aah475 24 60 D D (%) Gp (dB) 22


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PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV nxp TRANSISTOR SMD 13 RF35
HIR26-21C

Abstract:
Text: Look Emitter - SMD Photo Diode - DIP Photo Diode - Side Look Photo Diode - SMD Photo Transistor - DIP Photo Transistor - Side Look Photo Transistor - SMD Darlington Transistor - DIP-DC High Speed Transistor - DIP-AC Transistor - DIP-DC Transistor - SOP-AC Transistor - SOP-DC Transistor - SSOP-AC Transistor - SSOP-DC Triac Schmitt Trigger High Data Rate Short Burst - DIP-Vo-GND-Vcc High Data Rate , LEDs, LAMPs, SMD LEDs, Lighting Modules, Digital Displays, Optocouplers and Infrared components


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PDF CT1003Q43-V2 HIR26-21C w32 smd transistor 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM w32 smd transistor 143 ELM-1882-UYWB l289 19-223SURSYGC/S530-A3/E3/TR8 w27 smd transistor itr8102
2008 - 30RF35

Abstract:
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , (RoHS) BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 , -100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5 , -100 NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 30RF35 C5750X7R1H106M
2007 - g1 smd transistor

Abstract:
Text: - W2 S Hbias 10uF 160V G G2 W1 1 RSENSE2 R15 4 C6 Q8 NC D NC , Quantity Identification Value Description 390R SMD 0805 1% generic 10K SMD 0805 1 , 30BQ100 BZX284C16 LL4148 SMD 0805 1% generic SMD 0805 1% generic SMD 0805 1% generic SMD 0805 1% generic SMD 0805 1% generic SMD 1206 1% generic SMD 0805 1% generic SMD 0805 1% generic SMD 1206 1% generic SMD 1210 1% generic SMD 1206 1% generic SMD 0805 1% generic SMD 0805 1% generic SMD 0805 1


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PDF ZXBM1015EV1 ZXBM1015EV1 ZXBM1015 g1 smd transistor SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor SMD Transistor nc smd transistor pinout sot23
2013 - Not Available

Abstract:
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 - 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 , September 2013 2 of 13 NXP Semiconductors BLS7G2729L(S)-350P LDMOS S-band radar power transistor , radar power transistor 7. Test information 7.1 Ruggedness in class-AB operation The BLS7G2729L


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PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
2013 - Not Available

Abstract:
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band , Semiconductors LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin , power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter , )-350P NXP Semiconductors LDMOS S-band radar power transistor 7. Test information 7.1


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PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
2013 - Not Available

Abstract:
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 - 6 May 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 , May 2013 2 of 12 NXP Semiconductors BLS7G2729L(S)-350P LDMOS S-band radar power transistor , S-band radar power transistor 7. Test information 7.1 Ruggedness in class-AB operation The


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PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
2008 - transistor K 1352

Abstract:
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 VJ1206Y104KXB TRANSISTOR K 135 C5750X7R1H106M C4532X7R1H475M RF35 722 smd transistor 30RF35
2012 - Not Available

Abstract:
Text: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 2 - 20 September 2012 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various , . NXP Semiconductors BLF2425M6L(S)180P Power LDMOS transistor 2. Pinning information Table 2 , transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Tcase , BLF2425M6L(S)180P Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured


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PDF BLF2425M6L180P; BLF2425M6LS180P 2002/95/EC, BLF2425M6L180P 25M6LS180P
2008 - transistor BV-1 501

Abstract:
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor I Compliant to Directive 2002/95/EC , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter , Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description Frame


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor 30RF35 C5750X7R1H106M RF35 VJ1206Y104KXB
2012 - BLF7G3135L-350P

Abstract:
Text: BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 1 - 12 October 2012 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended , range NXP Semiconductors BLS7G3135L(S)-350P LDMOS S-band radar power transistor 2. Pinning , LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Zth(j-mb) Thermal , LDMOS S-band radar power transistor Table 7. RF characteristics Test signal: pulsed RF; tp = 300 s


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PDF BLS7G3135L-350P; BLS7G3135LS-350P BLS7G3135L-350P 7G3135LS-350P BLF7G3135L-350P ATC700A
2009 - BLF6G10-200RN

Abstract:
Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 01 - 19 January 2009 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station , ) BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power , NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aaj415 21 60 Gp Gp


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PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 vj1206y224kxb
2010 - Not Available

Abstract:
Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base , transistor 1.3 Applications ̈ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol , BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aaj415 21


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PDF BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN
2006 - 4G10

Abstract:
Text: BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 - 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station , BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 1.3 Applications s , BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 5. Thermal , BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 001aac400 20.5


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PDF BLF4G10-120; BLF4G10S-120 ACPR400 ACPR600 ACPR400 4G10 BLF4G10-120 BLF4G10S-120
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