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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
1462000001 1462000001 ECAD Model Molex ANTENNA CHIP LTE 2.2GHZ
0603CS-R47XGLU 0603CS-R47XGLU ECAD Model Coilcraft Inc 0603CS (1608) Ceramic Chip Inductors
0603CS-5N6XJAW 0603CS-5N6XJAW ECAD Model Coilcraft Inc 0603CS (1608) Ceramic Chip Inductors
VCBUP7TC6 VCBUP7TC6 ECAD Model Texas Instruments Digital Media System-on-Chip 529-FCBGA
TMSDM6467CCUTV6TAN TMSDM6467CCUTV6TAN ECAD Model Texas Instruments Digital Media System-on-Chip 529-FCBGA
TMSDM6467CCUT6TAN TMSDM6467CCUT6TAN ECAD Model Texas Instruments Digital Media System-on-Chip 529-FCBGA
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v-chip datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
V-CHIP-KIT1 V-CHIP-KIT1 ECAD Model Cornell Dubilier Capacitor Kits, Kits, KIT CAP ALUM 10UF - 1000UF Original PDF
V-CHIP-KIT2 V-CHIP-KIT2 ECAD Model Cornell Dubilier Capacitor Kits, Kits, KIT CAP ALUM 10UF - 1000UF Original PDF
V-CHIP-KIT4 V-CHIP-KIT4 ECAD Model Cornell Dubilier Capacitor Kits, Kits, KIT CAP ALUM 10UF - 1000UF Original PDF

v-chip Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - Not Available

Abstract: No abstract text available
Text: : cdenb@cornell-dubilier.com Type SPV SMT - Solid Polymer Cathode Typical Performance Curves SPV vs Low Impedance V-Chip , ESR (Low Impedance V-Chip ) mOhms 1000 Impedance (Low Impedance V-Chip ) The Low Impedance V-chip employs a liquid electrolyte and represents the best of this type. Note: Type SPV employing a , Capacitance Change vs. Temperature (Typical Performance SPV and Low Impedance V-Chip ) 20 Capacitance Change (%) 15 10 5 0 -5 Low Impedance V-Chip SPV -10 -15 -20 -60 -10 40 90 140 Temperature (°C


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2002 - Cornell Dubilier

Abstract: spv 9 SPV127M10M24T SPV157M06M24T SPV157M10M24T SPV227M06M24T SPV277M10N24T SPV337M06N24T SPV337M10G24T SPV397M06N24T
Text: Impedance V-Chip ESR & Impedance Comparison 100000 470 µF/10 Vdc at 25°C 10000 The Low Impedance V-chip employs a liquid electrolyte and represents the best of this type. ESR (Low Impedance V-Chip ) Impedance (Low Impedance V-Chip ) mOhms 1000 Note: Type SPV employing a solid polymer electrolyte , . Temperature (Typical Performance SPV and Low Impedance V-Chip ) Capacitance Change (%) 20 15 10 5 SPV 0 -5 Low Impedance V-Chip -10 -15 -20 -60 -10 40 90 140 Temperature (°C


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elna rsh

Abstract: Nichicon PLM siemens ecu rmc npo capacitor B41822 siemens capacitor LEM3225 jamicon electrolytic capacitors LP5 ELNA jamicon tk series panasonic ge series capacitors
Text: Chemicon NACE 1 V-Chip Can 85°C * RV,RV2 RV3 * CS RV RV2 * UUR,UWX UUG VA VS REV CV-C CV-BS MV NACEN 17 V-Chip Can Non-Polar 85°C * RVB * * RVB * UWP VS-N NEV CV-NP MVBP NACEW NACH 6 8 V-Chip Can 105°C * CT RVS * UUV,UWT UUT,UUX VG,VV HA,HB RGV RKV * MVK MVJ NACK V-Chip Can Very Low ESR 105°C V-Chip Can 13 Extended Life 105°C V-Chip Can 5 Low Leakage 85


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PDF 1812LS 1812CS 1008LS CTX32T IMC1210 CTX32CT ISC1210 IMC1812 1008WW KQ1008 elna rsh Nichicon PLM siemens ecu rmc npo capacitor B41822 siemens capacitor LEM3225 jamicon electrolytic capacitors LP5 ELNA jamicon tk series panasonic ge series capacitors
2002 - Not Available

Abstract: No abstract text available
Text: Performance Curves SPV vs Low Impedance V-Chip ESR & Impedance Comparison 100000 470 µF/10 Vdc at 25°C 10000 The Low Impedance V-chip employs a liquid electrolyte and represents the best of this type. ESR (Low Impedance V-Chip ) Impedance (Low Impedance V-Chip ) mOhms 1000 Note: Type SPV , ) 10000 Capacitance Change vs. Temperature (Typical Performance SPV and Low Impedance V-Chip ) Capacitance Change (%) 20 15 10 5 SPV 0 -5 Low Impedance V-Chip -10 -15 -20 -60 -10


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2002 - Not Available

Abstract: No abstract text available
Text: Performance Curves SPV vs Low Impedance V-Chip ESR & Impedance Comparison 100000 470 µF/10 Vdc at 25°C 10000 The Low Impedance V-chip employs a liquid electrolyte and represents the best of this type. ESR (Low Impedance V-Chip ) Impedance (Low Impedance V-Chip ) mOhms 1000 Note: Type SPV , ) 10000 Capacitance Change vs. Temperature (Typical Performance SPV and Low Impedance V-Chip ) Capacitance Change (%) 20 15 10 5 SPV 0 -5 Low Impedance V-Chip -10 -15 -20 -60 -10


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2002 - v-chip

Abstract: No abstract text available
Text: , SPV and Low Impedance V-Chip ) 100.0 10.0 ESR (Low Impedance V-Chip ) Impedance (Low Impedance V-Chip ) Ohms 1.0 The Low Impedance V-chip employs a liquid electrolyte and represents the best , V-Chip ) 20 Capacitance Change (%) 15 10 5 0 -5 Low Impedance V-Chip SPV -10 -15 -20 -60 -10 40 , Low Impedance V-Chip ) ESR Change (%) 2500 2000 1500 Low Impedance V-Chip 1000 500 SPV 0


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2002 - Not Available

Abstract: No abstract text available
Text: Curves SPV vs Low Impedance V-Chip ESR & Impedance Comparison 100000 Aluminum Electrolytic Capacitors 470 µF/10 Vdc at 25°C 10000 ESR (Low Impedance V-Chip ) mOhms 1000 Impedance (Low Impedance V-Chip ) The Low Impedance V-chip employs a liquid electrolyte and represents the best of this , V-Chip ) 20 Capacitance Change (%) 15 10 5 0 -5 Low Impedance V-Chip SPV -10 -15 -20 -60 -10 40 , Low Impedance V-Chip ) ESR Change (%) 2500 2000 1500 Low Impedance V-Chip 1000 SPV 500 0


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1997 - architecture diagram for 8080

Abstract: Z89300 Z89301 Z89302 Z89303 Z89314 Z89328 ADC 4-BIT v-chip
Text: Zilog's V-Chip Solution For Violence Blocking The Z89300 Family of Integrated TV Controllers V-Chip Technology Available Now Zilog's Z89300 TV controller family already has the recommended TV program rating decoding and control capability. The architecture of the highperformance Z89300 family , with on-board ROM (read only memory) software to accommodate the V-chip decoding. Closed Caption , Blocking In: TV VCRs Set Top Boxes FL97TEL0501 Zilog's V-Chip Solution For Violence Blocking


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PDF Z89300 architecture diagram for 8080 Z89301 Z89302 Z89303 Z89314 Z89328 ADC 4-BIT v-chip
NSPZ NIC

Abstract: v-chip
Text: / PRODUCT DISCONTINUATION NOTICE PRODUCTS: SMT V-CHIP SOLID ELECTROLYTE ALUMINUM ELECTROLYTIC CAPACITORS , production of the NSPV series Of SMT V-Chip Solid Electrolyte Aluminum Electrolytic Capacitors as of Oct 29th , 'S MARKET NSPV SMT V-Chip REPLACEMENTS / ALTERNATES: NSP ­ Flat Chip Solid Polymer Electrolyte , Construction for Ultra-Low ESR , High RCR and Long Life at high temperatures NSPE - SMT V-Chip Hybrid Electrolyte Aluminum Electrolytic Capacitors · Same format and sizes V-Chip construction · Lower Unit Cost


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1997 - Sync Slicer

Abstract: EIA-608 SMART OSD Z86129 PIP VIDEO processor v-chip OSD ic
Text: Zilog's Z86129 V-Chip Violence-Blocking Solutions Violence Blocking for Picture-In-Picture (PIP) V-Chip Compliance is Preprogrammed The Z86129 is a complete, stand-alone Line 21 decoder for Extended Data Services (XDS) and closed captions. The Z86129 is preprogrammed to be in full compliance with , Zilog's Z86129 V-Chip Violence-Blocking Solutions Z86129 Functional Block Diagram Video In Data , Display RAM 2 IC Host I/O Interface Output Logic Zilog Z86129 V-Chip Features


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PDF Z86129 EIA-608 DS96TEL0203 Sync Slicer SMART OSD PIP VIDEO processor v-chip OSD ic
electrolytic capacitor 10 uf with ESR rating

Abstract: electrolytic capacitor date code
Text: / PRODUCT DISCONTINUATION NOTICE PRODUCTS: SMT V-CHIP SOLID ELECTROLYTE ALUMINUM ELECTROLYTIC CAPACITORS , production of the NSPV series Of SMT V-Chip Solid Electrolyte Aluminum Electrolytic Capacitors as of Oct 29th , 'S MARKET NSPV SMT V-Chip REPLACEMENTS / ALTERNATES: NSP ­ Flat Chip Solid Polymer Electrolyte , Construction for Ultra-Low ESR , High RCR and Long Life at high temperatures NSPE - SMT V-Chip Hybrid Electrolyte Aluminum Electrolytic Capacitors · Same format and sizes V-Chip construction · Lower Unit Cost


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PDF 380mm electrolytic capacitor 10 uf with ESR rating electrolytic capacitor date code
2009 - Not Available

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors FEATURES · DOUBLE LAYER CONSTRUCTION · POWER BACK-UP FOR CMOS DEVICES · SURFACE MOUNTABLE V-CHIP STYLE · LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +70°C 1,000 hours +85°C 240 hours , www.lowESR.com www.RFpassives.com www.SMTmagnetics.com 255 V-Chip Memory Back-Up Capacitors LAND , www.SMTmagnetics.com V-Chip Memory Back-Up Capacitors CARRIER TAPE DIMENSIONS (mm) Case Size 10.5 x 5.5 10.5 x


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SERVICE MANUAL tv samsung

Abstract: SERVICE MANUAL samsung television sansui television service mode manual service mode of goldstar tv SERVICE MANUAL tv sony Colour television picture tube connection details sansui Colour TV SERVICE MANUAL sansui tv repair panasonic colour television picture tube
Text: . 23 Using V-CHIP Control . 24 Reference Section Cleaning and Care , : V-CHIP CONTROL FAVORITE CH MOVE[s t] SELECT[T S] CH RTN 100 0 Setup menu ENT CH T , MUTE TIMER: 0 MIN TV/CABLE: [TV]CABLE CH PROGRAM ADD/ERASE: [ADD]ERASE V-CHIP CONTROL , MIN TV/CABLE: TV[CABLE] CH PROGRAM ADD/ERASE: [ADD]ERASE V-CHIP CONTROL FAVORITE CH MOVE[s t , PROGRAM ADD/ERASE: [ADD]ERASE V-CHIP CONTROL FAVORITE CH ENT MOVE[s t] START[T S] T/S VOL


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PDF CZ19T31 OFFICE/82 1420B OFFICE/327 OFFICE/191 SERVICE MANUAL tv samsung SERVICE MANUAL samsung television sansui television service mode manual service mode of goldstar tv SERVICE MANUAL tv sony Colour television picture tube connection details sansui Colour TV SERVICE MANUAL sansui tv repair panasonic colour television picture tube
2011 - NEXC474

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors FEATURES · DOUBLE LAYER CONSTRUCTION · POWER BACK-UP FOR CMOS DEVICES · SURFACE MOUNTABLE V-CHIP STYLE · LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +70°C 1,000 hours Temperature , www.SMTmagnetics.com SPECIFICATIONS ARE SUBJECT TO CHANGE 1 V-Chip Memory Back-Up Capacitors LAND PATTERN , CHANGE V-Chip Memory Back-Up Capacitors CARRIER TAPE DIMENSIONS (mm) Case Size 10.5 x 5.5 10.5 x


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2011 - NEXCW224

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors FEATURES · DOUBLE LAYER CONSTRUCTION · POWER BACK-UP FOR CMOS DEVICES · SURFACE MOUNTABLE V-CHIP STYLE · LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +85°C 240 hours Temperature , V-Chip Memory Back-Up Capacitors CASE DIMENSIONS (mm) Case Size 10.7 x 5.5 10.7 x 8.5 D ± 10.7 10.7 L , www.RFpassives.com www.SMTmagnetics.com SPECIFICATIONS ARE SUBJECT TO CHANGE V-Chip Memory Back-Up


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2013 - Not Available

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors NEZVN & NEZVL Series FEATURES RoHS · DOUBLE LAYER CONSTRUCTION Compliant · HIGH TEMPERATURE REFLOW (+260°C) includes all homogeneous materials · SURFACE MOUNTABLE V-CHIP STYLE · EXTENDED TEMPERATURE RANGE (UP TO +85°C FOR NEZVL) CHARACTERISTICS Series , www.SMTmagnetics.com SPECIFICATIONS ARE SUBJECT TO CHANGE 1 V-Chip Memory Back-Up Capacitors LAND PATTERN , www.SMTmagnetics.com SPECIFICATIONS ARE SUBJECT TO CHANGE V-Chip Memory Back-Up Capacitors CARRIER TAPE


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Not Available

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors NEZVN & NEZVL Series FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • HIGH TEMPERATURE REFLOW (+260°C) includes all homogeneous materials • SURFACE MOUNTABLE V-CHIP STYLE • EXTENDED TEMPERATURE RANGE (UP TO +85°C FOR NEZVL) CHARACTERISTICS Series , www.SMTmagnetics.com 1 V-Chip Memory Back-Up Capacitors LAND PATTERN DIMENSIONS (mm) Case Diameter 12.5 R , www.RFpassives.com SPECIFICATIONS ARE SUBJECT TO CHANGE www.SMTmagnetics.com V-Chip Memory Back-Up


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2013 - Not Available

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors NEZVN & NEZVL Series FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • HIGH TEMPERATURE REFLOW (+260°C) includes all homogeneous materials • SURFACE MOUNTABLE V-CHIP STYLE • EXTENDED TEMPERATURE RANGE (UP TO +85°C FOR NEZVL) CHARACTERISTICS Series , www.SMTmagnetics.com 1 V-Chip Memory Back-Up Capacitors LAND PATTERN DIMENSIONS (mm) Case Diameter 12.5 R , www.SMTmagnetics.com V-Chip Memory Back-Up Capacitors NEZVN & NEZVL Series CARRIER TAPE DIMENSIONS (mm) Case


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2009 - v-chip

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors FEATURES · DOUBLE LAYER CONSTRUCTION · POWER BACK-UP FOR CMOS DEVICES · SURFACE MOUNTABLE V-CHIP STYLE · LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +70°C 1,000 hours +85°C 240 hours (NEXCW) Temperature Cycling (5 cycles, -25 ~ +70°C 3.5 & 5.5VDC 0.047F ~ 1.0F (47,000F ~ 1,000,000F , www.SMTmagnetics.com 233 V-Chip Memory Back-Up Capacitors LAND PATTERN DIMENSIONS (mm) Case Diameter 10.5 10.7


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2012 - Capacitors

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors FEATURES · DOUBLE LAYER CONSTRUCTION · POWER BACK-UP FOR CMOS DEVICES · SURFACE MOUNTABLE V-CHIP STYLE · LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +70°C 1,000 hours Temperature , www.SMTmagnetics.com SPECIFICATIONS ARE SUBJECT TO CHANGE 1 V-Chip Memory Back-Up Capacitors LAND PATTERN , CHANGE V-Chip Memory Back-Up Capacitors CARRIER TAPE DIMENSIONS (mm) Case Size 10.5 x 5.5 10.5 x


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2010 - NEXC473Z5.5V10.5X5.5TRF

Abstract: NEXC474Z5.5V16X9.5TRF NEXC104Z3 NEXC104Z5 NEXC224Z3 NEXC224Z5 NEXC473Z5 NEXC474Z3 NEXC474Z5
Text: V-Chip Memory Back-Up Capacitors FEATURES · DOUBLE LAYER CONSTRUCTION · POWER BACK-UP FOR CMOS DEVICES · SURFACE MOUNTABLE V-CHIP STYLE · LEAD-FREE FINISH NEXC Series *New* High Temperature Reflow +260°C See Datasheet for Available Values CHARACTERISTICS Rated Voltage Range Rated , www.SMTmagnetics.com 259 V-Chip Memory Back-Up Capacitors LAND PATTERN DIMENSIONS (mm) Case Diameter 10.5 , COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com V-Chip


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2010 - Not Available

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FINISH NEXC Series *New* High Temperature Reflow +260°C See Datasheet for Available Values CHARACTERISTICS Rated Voltage , . www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com 259 V-Chip Memory Back-Up , CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com V-Chip Memory


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2013 - Not Available

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors NEZVN & NEZVL Series FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • HIGH TEMPERATURE REFLOW (+260°C) includes all homogeneous materials • SURFACE MOUNTABLE V-CHIP STYLE • EXTENDED TEMPERATURE RANGE (UP TO +85°C FOR NEZVL) CHARACTERISTICS Series , www.SMTmagnetics.com 1 V-Chip Memory Back-Up Capacitors LAND PATTERN DIMENSIONS (mm) Case Diameter 12.5 R , www.lowESR.com www.RFpassives.com SPECIFICATIONS ARE SUBJECT TO CHANGE www.SMTmagnetics.com V-Chip


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Not Available

Abstract: No abstract text available
Text: FOR DISCONTINUATION: Non-competitive against V-Chip format versions REPLACEMENT - ALTERNATE: Replace NACM with V-Chip format versions [Selection Guide: http://www.niccomp.com/Catalog


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2009 - Not Available

Abstract: No abstract text available
Text: V-Chip Memory Back-Up Capacitors FEATURES · DOUBLE LAYER CONSTRUCTION · POWER BACK-UP FOR CMOS DEVICES · SURFACE MOUNTABLE V-CHIP STYLE · LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +70°C 1,000 hours +85°C 240 hours (NEXCW) Temperature Cycling (5 cycles, -25 ~ +70°C 3.5 & 5.5VDC 0.047F ~ 1.0F (47,000F ~ 1,000,000F , . www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com 233 V-Chip Memory Back-Up


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