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Part Manufacturer Description Datasheet Download Buy Part
LT1025ACJ8 Linear Technology T.C. COLD JUNCTION COMPENSATOR
LT1056S8#TR Linear Technology LT1056 - Precision, High Speed, JFET Input Operational Amplifiers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1057IS8#PBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1122DS8#PBF Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1792ACN8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1792IS8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C

uni junction transistor 2N2646 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
UJT 2N2646 specification

Abstract: 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B thyristor scr oscillator circuit uni junction transistor 2N2646 GE SCR Manual General electric SCR manual 2N4891
Text: unijunction transistor in 1956, General Electric has continued developing an extensive line of negative , device. PROGRAMMABLE UNIJUNCTION TRANSISTOR (PUT)—variable threshold, low cost, fast switching speed , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , Transistors r—«i The General Electric Silicon Unijunction Transistor is a three terminal device having , = Junction Temperature (Degrees Kelvin) (4) The interbase resistance is nearly ohmic and increases with


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PDF 2N489-494â 2N2646-47â 2N1671-2N1671A) 2N1671B) UJT 2N2646 specification 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B thyristor scr oscillator circuit uni junction transistor 2N2646 GE SCR Manual General electric SCR manual 2N4891
2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 2N1304 npn 2N2926 2N2147 transistor 2N1308 2N1309
Text: 250mc<" + 60 40") 150mA High speed Switch 0.65* 2N2646 S/PNP UJ RBB =4.7-9.1k; u=.56-.75; lv=4mA; lp , Minimum value (2) Average value <3> Max. uni lateral ¡zed power gain Max. frequency of oscillation <5


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PDF 2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 360mW 120mcf2) 2N2147 fet 2n2646 2n2926 2n3055 tos 2N1305 2N1304 npn 2N2926 2N2147 transistor 2N1308 2N1309
Not Available

Abstract: No abstract text available
Text: PARAMETER CONDITIONS MI N. TYP. MAX. UNI T Thermal resistance junction to mounting base Thermal , Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor BUK462-1 00A G E N E R A L DE SCRIPTION N-channel enhancement mode field-effed power transistor in a , (O N ) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature , CONDITIONS - MI N. - MAX. UNI T V ds V dgr - ^ g s p Id Id Idm 1 1o1 T s1g Ti


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PDF BUK462-1
Not Available

Abstract: No abstract text available
Text: , PHB21N06LT PARAMETER CONDITIONS T YP. - MAX. UNI T j-a Thermal resistance junction to , transistor Logic level FET PHP21 N06LT, PHB21 N 0 6 L T F E A TU R ES · ' T re n c h ' technology · , , field-effect power transistor in a plastic envelope using 't r e n c h ' technology. The device has very low , (IEC 134) SYMBOL PARAMETER MI N. - MAX. UNI T V dss V dgR V gS Drain-source voltage , Operating junction and storage temperature Tj = 25 °C to 175°C Tj = 25 °C to 175°C; RG S = 20 kQ Tm b =


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PDF PHP21 N06LT, PHB21
Not Available

Abstract: No abstract text available
Text: transistor Logic level FET PHP50N06LT, PHB50N06LT FEATURES · 'T r e n c h ' technology · Very low , L DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic , dissipation Operating junction and storage temperature Tj = 25 °C to 175°C Tj = 25 °C to 175°C; R G S = 20 , specification TrenchMOSTM transistor Logic level FET T H E R M A L RESI ST AN CE S SYMBOL Rlh j-m b j-a PARAMETER CONDITIONS PHP50N06LT, PHB50N06LT TYP. - MAX. 1.2 - UNI T Thermal resistance


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PDF PHP50N06LT, PHB50N06LT T0220AB)
Not Available

Abstract: No abstract text available
Text: ) G E N E R A L DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in , power dissipation Operating junction and storage temperature Tj = 25 °C to 175°C Tj = 25 °C to 175 , Product specification TrenchMOSTM transistor Logic level FET T H E R M A L RESI ST AN CE S SYMBOL Rlh j-m b j-a PARAMETER CONDITIONS PHP125N06LT, PHB125N06LT TYP. - MAX. UNI T Thermal resistance junction to mounting base Thermal resistance junction to ambient 0.6 - K/W K/W K/W S O T


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PDF 25N06LT, T0220AB)
Unitrode transistors data To5

Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
Text: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC 43E D _ 12400 _ ^ T UNI " F Smart Power Transistor UNITRODE FEATURES · Greater Than 1.0A Output · 3-OjuA Typical Base Current · , Voltage Switching Time Thermal Resistance Junction to Case lc < 1 .0 A , T a = 25°C V lb lq , UC195 UC295 UC395 UNI T> 33 ' Junction to Case Vbe ts 8|c 1.0 1.0 -50 2.2 1.8 1.8 2.2 10 2.0 0.9 500 2.3 12 2.5 3.0 3.0 15 3.5 4.2


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PDF 500ns O-257 UC295 UC395 UC195/UC395 0Q12M03 UC195 Unitrode transistors data To5 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
VPH03

Abstract: No abstract text available
Text: -25"C ) PD Junction Temperature Tj Operating Temperature Ta(op) Storage Temperature Tstg uni t , high-precision FBET and LSBT transistor chips into a single 1 C, allowing very high-output voltage , VCC Vout -150Vp-p VBB Vln(DC)-4.IV icteri st 1 cs at To- 2S1; uni t 150 V 12 V 200 V 12 V ain typ nax uni t Frequency Bandwidth fc(-3dB) Condition 1 Vout-100Vp-p 15 18 MHz Condition 2


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PDF 18MHz 150Vp-p VPH03
2009 - MMDT4403

Abstract: transistor c 2026 TRANSISTOR m3a
Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts , : M3A 6 5 4 1 2 3 Fig.53 ABSOLUTE RATINGS PARAMETER Symbol Value Uni , (Note 1) PTOT 200 mW Thermal Resistance , Junction to Ambient RJA 625 Junction , Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. REV.0.1-JUL.22.2009 PAGE . 1 MMDT4403 , Uni ts C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R) C E O IC =- 1 .0 mA , IB


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PDF MMDT4403 -600mA 2002/95/EC OT-363, MIL-STD-750, MMDT4403 transistor c 2026 TRANSISTOR m3a
2011 - TRANSISTOR MARKING TE SOT363

Abstract: No abstract text available
Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES · PNP epitaxial silicon , nuous Symbol VCEO VCBO VEBO IC Value -40 -60 -6.0 -600 Uni ts V V V mA THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature , ) MAX. Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. REV.0.1-JUL.22.2009 PAGE . 1 0.087 , 20 0 .7 5 200 TYP. MA X . -1 0 0 -1 0 0 300 -0 .4 0 -0 .7 5 -0 .9 5 -1 .3 0 6 .5 30 15 20 225 30 Uni


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PDF MMDT4403 -600mA 2002/95/EC OT-363 OT-363, MIL-STD-750, TRANSISTOR MARKING TE SOT363
1997 - HP4504

Abstract: ic hp4504 OPTO HP4504 hp4504 optocoupler transistor c1018 AN1590 of IC 74ls07 motorola 74LS07 opto-isolators current sensor hp450
Text: Isolated Gate Transistors such as MOS or IGBT (Isolated Gate Bipolar Transistor ) of up to a maximum of 400 , J1 J1 UNI -2 J2 J2 Figure 1-1. Members of the Motor Control Kit This document , included are: · interface which meets the UNI -2 specification · opto isolation · input , important signals · 2.1 variable configuration UNI -2 Interface Connector The connection to , through one common interface - UNI -2 (connector J1). The definition of the interface covers several


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PDF AN1590/D AN1590 HP4504 ic hp4504 OPTO HP4504 hp4504 optocoupler transistor c1018 AN1590 of IC 74ls07 motorola 74LS07 opto-isolators current sensor hp450
2004 - HP4504

Abstract: ic hp4504 OPTO HP4504 AN1590 hp4504 optocoupler hp450 74LS07 Isolation amplifier MPIC2112 MGP20N60
Text: (HV) Power Board with Isolated Gate Transistors such as MOS or IGBT (Isolated Gate Bipolar Transistor , discrete IGBTs 1 1 J1 J1 UNI -2 J2 J2 Figure 1-1. Members of the Motor Control Kit , Board Features included are: · interface which meets the UNI -2 specification · opto , for all important signals variable configuration UNI -2 Interface Connector The connection to , through one common interface - UNI -2 (connector J1). The definition of the interface covers several


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PDF AN1590/D AN1590 HP4504 ic hp4504 OPTO HP4504 AN1590 hp4504 optocoupler hp450 74LS07 Isolation amplifier MPIC2112 MGP20N60
hp4504

Abstract: ic hp4504 OPTO HP4504 hp450 DETAILS of ic 7805 5v for microcontroller AN1590 DETAILS of ic 7805 PH41 PH61 78L05 TO220
Text: Transistors such as MOS or IGBT (Isolated Gate Bipolar Transistor ) of up to a maximum of 400 V DC-Bus voltage , Microcontroller board - HC05MC4 HV Power Board with discrete IGBTs 1 1 J1 J1 UNI -2 J2 J2 , meets the UNI -2 specification · opto isolation · input gates (buffers or inverters) for PWM , configuration UNI -2 Interface Connector The connection to the all boards necessary for the whole system (microcontroller board, extra PCB boards) is provided through one common interface - UNI -2 (connector J1). The


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PDF AN1590/D AN1590 hp4504 ic hp4504 OPTO HP4504 hp450 DETAILS of ic 7805 5v for microcontroller AN1590 DETAILS of ic 7805 PH41 PH61 78L05 TO220
VPH05

Abstract: VPH01 VPH03
Text: projection Integrate, a oi.pl #te amplifier uaing high-precialoo R~BET and LS BT transistor chip. into a , F»D < Ta-25"C ) F»D < Tc" 25X3 ) Junction Temperature TJ Operating Temperature Ta(op) Storage Temperature Tstg Ta- CZSr uni t 230 V 20 V 3.5 W 20 W 150 85 -20 to 110 r ■c r Connoot i on md Out 1 i n< 12 3 4 VGE I BN • BD P N H-F^— -II- Case Outlin£ ( uni t;am) «3.5 5 6 7 G N D , Recommended Operat 1 ng Cond 1 t i oris at. Ta- 25t uni t Condition 1 VCC r- Vout -iOOVp- P


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PDF 0012b77 VPH05 VPH05 VccA200V VPH01 VPH03
transistor oc 76

Abstract: SGS-THOMSON servo focus tracking x06A
Text: Val ue Uni t O perating T em perature Range Maximum Junction Tem perature Therm al Resistance Junction to A m bient Therm al Resistance Junction to Pins Max. Typ. -25 to 80 150 50 n 17 Rlh i -amb , SUPPLY VOLTAGE RANGE (6 TO 15V) 5V REGULATOR DRIVER FOR EXTERNAL PASS TRANSISTOR WITH FOLD-BACK SHORT , supply 4.th channel negative output Positive input fo r the 1 .st channel Pass transistor driver A 7 # , T e s t Condi t i on Mi n. Typ. Max. Uni t min. Min. positive supply voltage Max


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PDF TDA7473 200mA) transistor oc 76 SGS-THOMSON servo focus tracking x06A
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification P o w e r M O S transistor PHP26N10E G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope , UNI T ^DS Id Plot R dS (O N ) Drain-source voltage Drain current (DC) Total power dissipation , . _ MAX. UNI T Continuous drain current Pulsed drain current Idm Total dissipation Pd AP D , avalanche current Us T]> Tslg Operating junction and storage temperature range Tm b= Tm b= Tm b= Tm b= Tm


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PDF PHP26N10E
Not Available

Abstract: No abstract text available
Text: *57 TYPE STD8N06 SGS-THOMSON m STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR , 25 °C D erating Factor Ts1g Tj Storage T em perature Max. O perating Junction T em perature , = 0) Test C o n d i t i o n s I d = 250 n-A V gs = 0 Min. 60 Typ. M ax. Uni t V , i t i o n s Id = 2 5 0 Mi n. 2 Typ. 3 0.21 M ax. 4 0 .2 5 Uni t V a A ^A lD = , M ax. Uni t S V Ds = 25 V f = 1 MHz V qs = 0 340 120 40 PF PF PF 2/10 * T #


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PDF STD8N06 O-251) O-252) O-251 O-252
TI SVG

Abstract: No abstract text available
Text: Philips Semiconductors Product specification P o w e r M O S transistor PHP8N20E G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope , X . UNI T Id Plot R dS (O N ) Drain-source voltage Drain current (DC) Total power dissipation , . MAX. UNI T Continuous drain current Pulsed drain current Idm Total dissipation Pd AP o/ATm b Linear , ]> Tslg Operating junction and storage temperature range Tm b= Tm b= Tm b= Tm b= Tm b> 25 °C; VG S =


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PDF PHP8N20E TI SVG
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA55 Preliminary AMPLIFIER TRANSISTOR PNP MMBTA55 , ® Preliminary AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified , Total device dissipation PD Derate above 25°C 2.8 mW/°C Junction Temperature TJ 125 °C , functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL RATINGS Junction to , =10mA, VCE=1V IC=100mA, VCE=1V IC=100mA, IB=10mA IC=100mA, VCE=1V UNI T 100 100 IC=100mA, VCE


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PDF MMBTA55 MMBTA55L-AE3-R MMBTA55G-AE3-R OT-23 MMBTA55L-AL3-R MMBTA55G-AL3-R OT-323 QW-R206-104
VPH05

Abstract: K10N VPH01 VPH03
Text: using high-precision FBET and LSBT transistor chip» Into a single I G.allowing very high-output voltage , Voltage Ra.t i ng: VCC VBB Allowable Power Dissipation RD < Ta-25"C ) PD Junction Temperature Tj Operating Temperature Ts(op) Storage Temperature Tstg at Tat- 25Ï uni t 230 V 20 V 3.5 W 20 W , Opei Condition 1 it i rig Cond iti ons VCC [— Vout -100Vp-p VBB L Vin(DC}"3. 3V Tia- 25r uni t , INTERNAL Cl CUIT o+VCC VBB uni t MHz MHz ■V1 lue s ••.«.A )'■i. A , in A 1», A VPHO 3


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PDF 7T1707b VPH03 30MHz 32kHZ 150Vp-p 00V-VB8 VPH05 K10N VPH01
small signal transistor MOTOROLA

Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
Text: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA q 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor (JFETs) .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$".*. ~y,.,., . *!\*,\. t , COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA q a This pa~,jntentionally MOTOROLA , itirwly, w claim of personal Injury or death uch uni ~m~ oruna~honz~ m, even ifti dam afls9as hat


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PDF by2N3621JTND 2N3821JTX, MlL4-19500/375 TM06AF 2N3821JTX PHW4101 2Ns21JmD small signal transistor MOTOROLA w21 transistor MOTOROLA small signal transistor FIDL 5Bp transistor MOTOROLA TRANSISTOR
N50E

Abstract: PHP33N10E
Text: Philips S em iconductors Product specification P o w e r M O S transistor PHP33N10 G E , PARAMETER MA X . UNI T Id P lo t R dS (O N ) D rain-source voltage Drain current (DC) Total pow er , CONDITIONS MI N. - MAX. UNI T Id Idm Pd AP D /A T m b V gs T|, Ts 1 g C ontinuous drain current , b l^ 1hj-a Therm al resistance junction to m ounting base Therm al resistance junction to am , specification PowerMOS transistor PHP33N10 E L EC T RI CA L CH A R A C T E R IS T IC S Tj = 25 °C


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PDF PHP33N10 N50E PHP33N10E
1997 - BUT11A CIRCUIT

Abstract: BUT11A P011C
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 3 1 2 TO-220 DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for , Temperature Max. Operating Junction Temperature Value 1000 450 9 5 10 2 4 83 -65 to 150 150


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PDF BUT11A O-220 BUT11A O-220 BUT11A CIRCUIT P011C
transistor smd ba rn

Abstract: smd ya transistor ferroxcube 4322 Variable capacitor
Text: VALUE UNI T Rlh j-mb Rlh mb-h thermal resistance from junction to mounting base thermal , DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2048 UHF push-pull power transistor , UHF push-pull po w er transistor BLV2048 FEATURES PINNI NG - SOT494A PIN S YMBOL DESCRI PTI , 1800 to 2000 MHz frequency range. DESCRI PTI ON NPN silicon planar push-pull power transistor in , specified. S YMBOL PARAMETER C ONDI TI ONS MIN. - MAX. UNI T VcBO V CEO V ebo lc ! c (av ) Plot


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PDF BLV2048 SC19a OT494A 125108/00/02/pp16 transistor smd ba rn smd ya transistor ferroxcube 4322 Variable capacitor
1996 - AN1590

Abstract: HC05MC4 IGBT motor DRIVER SCHEMATIC hcpl HP4504 single phase IGBT based PWM inverters OPTO HP4504 SCHEMATIC POWER SUPPLY WITH IGBTS opto isolation application note microcontroller based PWM inverters MPIC Motorola
Text: board with Isolated Gate Transistors such as MOS or IGBTs (Isolated Gate Bipolar Transistor ) of up to a , J1 J1 UNI -2 J2 J2 Figure 1-1 Members of the Motor Control Kit This document , the UNI -2 specification ­ support for multiple package options of power switches - TO220+diode , to Figure 2-2 for a description of each pin and its functionality. For more details refer to the UNI -2 specification. MOTOROLA 2 AN1590 Preliminary New interface UNI -2 Present interface UNI -1 1


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PDF AN1590/D AN1590 AN1590 HC05MC4 IGBT motor DRIVER SCHEMATIC hcpl HP4504 single phase IGBT based PWM inverters OPTO HP4504 SCHEMATIC POWER SUPPLY WITH IGBTS opto isolation application note microcontroller based PWM inverters MPIC Motorola
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