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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C

um 44 diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - HI155G1S02R

Abstract: laser diode 1550 nm 600 um laser fiber medical LTH 1550 01 HI155G1S04R
Text: = flat fiber - 01 Emitter Size 03= 75 µm 04= 100 µm 3J09= 225 µm x 10 µm Diode Configuration 1S , Kingdom Laser Components (UK) Ltd. Tel: + 44 1245 491 499 Fax:+ 44 1245 491 801 info@lasercomponents.co.uk , = 21°C, tW= 150 ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min , -L-0-01 905D1S03R 4.75 W 105 µm / 125 µm 0.15 7A 200 mA 905D1S03FP-10/22-F-0-01 905D1S03R 3.5 W 105 µm / 125 µm 0.22 , = 150 ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min.) Fiber core


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2012 - LTH 1550 01

Abstract: 905D1S03R HI155G1S04FP-10 905D1S um 44 diode HI155G 905D1S3J09R diode v6 HI155G1S02R 905D1S3J03R
Text: µm 04= 100 µm 3J09= 225 µm x 10 µm Diode Configuration 1S= single stack 2S= double stack Length 1m , Kingdom Laser Components (UK) Ltd. Tel: + 44 1245 491 499 Fax:+ 44 1245 491 801 info@lasercomponents.co.uk , = 21°C, tW= 150 ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min , -L-0-01 905D1S03R 5W 105 µm / 125 µm 0.15 7A 200 mA 905D1S03FP-10/22-F-0-01 905D1S03R 3.5 W 105 µm / 125 µm 0.22 7A , ns, Prr= 6.66 kHz Parameter Integrated Pulsed Laser Diode Po ex fiber at iFM, (min.) Fiber core


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5060 LED

Abstract: 5024 led
Text: Vibration resistance Solder bath temperature Soldering time 4C/O AgNi, AgNi/Au 0.2 um , AgNi/Au 5 um 250 V / 250 V 5V 6 A / 250 V AC 6 A / 24 V DC 5 mA AgNi, 5 mA AgNi/Au 0.2 um , 2 mA AgNi/Au 5 um 12 A 6A 1 500 VA 0.3 W AgNi, 0.3 W AgNi/Au 0.2 um , 0.1 W AgNi/Au 5 um 100 m AC: 10 ms AC: 8 , 4.4 4.4 4.4 21.2 6.5 6.2 6.3 6.3 4.1 27.5 Dimensions - plug-in version (WT), with test , plug-in version (WT), with lockable front test button type T 2.2x0.5 4.4 4.4 4.4 21.2 2.2x0.5


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PDF D4-2014-23-5230-WTL 5060 LED 5024 led
Not Available

Abstract: No abstract text available
Text: Laser Diodes Pulsed Laser Diode Module LS-Series Description The LS-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a , Optical trigger United Kingdom Laser Components (UK) Ltd. Tel: + 44 1245 491 499 Fax: + 44 1245 491 , Diodes Pulsed Laser Diode Module LS-Series Specifications for 850 nm PLD-Modules Part Number , Emitting Area 150 x 1 kHz µm * µm Package S 10 - Operating Voltage +12 VDC


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2005 - 905 nm Infrared Emitting Diode

Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Text: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode , 7041, info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: + 44 1245 491 499, Fax: + 44 1245 491 801, info@lasercomponents.co.uk France: OPTOPHOTONICS sa, Phone: +33 1 3959 5225, Fax: +33 1 3959 5350, info@optophotonics.fr Pulsed Laser Diode Module, LS-/LT-Series SPECIFICATIONS , M10 +12 Dim. nm W ns nJ mW % kHz µm * µm VDC % kHz Part Number Wavelength Optical Peak Power (NA>0.5


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2005 - 7040 TTL

Abstract: LS588 905 nm Infrared Emitting Diode
Text: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode , , info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: + 44 1245 491 499, Fax: + 44 1245 491 801 , , info@optophotonics.fr Pulsed Laser Diode Module, LS-/LT-Series Specifications for 905 nm PLD-Module Part number , +12 LS9-250-5M10-00 905 250 5.0 1250 37 TTL Ç 0.015 30 200*250 M10 +12 Dim. nm W ns nJ mW % kHz µm * µm , +12 TTL pos. 0.1 100 nm W ns nJ mW % kHz µm * µm VDC % kHz Germany and other countries: LASER


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2002 - ma4agsw1a

Abstract: J1 diode SN62 PB36 ag2 Microwave PIN diode
Text: pads are 120 µm x 120 µm AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A V 1.00 , n Europe: Tel. + 44 (1344) 869 595, Fax+ 44 (1344) 300 020 AlGaAs SPST Non-Reflective PIN Diode , : Tel. + 44 (1344) 869 595, Fax+ 44 (1344) 300 020 AlGaAs SPST Non-Reflective PIN Diode Switch , n Europe: Tel. + 44 (1344) 869 595, Fax+ 44 (1344) 300 020 AlGaAs SPST Non-Reflective PIN Diode , MA4AGSW1A AlGaAs SPST Non-Reflective PIN Diode Switch Features V 1.00 MA4AGSW1A Layout


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1301F

Abstract: No abstract text available
Text: 1300nm Laser Diode Singlemode Fiber Pigtail SCW/QCW 1300 Series Laser 1300 nm Up to 2mW , feed throughs and a double fiber ferrule to relieve fiber stress. Laser Diode , Inc. devices are , designed to comply with the advisory guidelines of Bellcore. Laser Diode is also running a quality program , +85 50 13 20 12 9 8-10 2 44 5-30 60 30 17 33 33 05 12 130 -35 40 50 10 6 20 10 0 5 to 0 25 - 25 to +75 40 to +85 50 13 20 12 9 8-10 2 44 5-30 60 30 17 50 0 05 12 130 35 40 50 to 6 20 10 0 5 to 0 25 -0 25


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PDF 1300nm 9/125/xm) QCW1301 1301F
data of coolar

Abstract: No abstract text available
Text: 0.05 0.5 30 70 40 1.7 0.05 0.5 Monitor Diode Photocurrent at Pm av (m in) M axim um dark current M , 1300nm Laser Diode Singlemode Fiber Pigtail SCW/QCW 1300 Series Laser 1300 nm M Q W Laser , throughs and a double fiber ferrule to relieve fiber stress. Laser Diode , Inc. devices are designed to meet , the advisory guidelines of Bellcore. Laser Diode is also running a quality program to meet the , cooler for temperature stabilization. An InGaAs, rear laser facet monitor diode Is included for optical


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PDF 1300nm 9/125pm) 9/125/900/jm. data of coolar
Not Available

Abstract: No abstract text available
Text: /fall time Monitor Diode Photocurrent at Pm ax (min) M axim um d ark current M axim um ca p a cita n , 1550nm Laser Diode Singlemode Fiber Pigtail SCW 1500 Series Laser 1550 nm M QW Laser , fiber stress. Laser Diode , Inc. devices are designed to meet the lifetime and reliability requirements , . Laser Diode is also running a quality program to meet the requirements of ISQ-9001. JUNE 1995 , laser facet monitor diode is included for optical stabilization and a thermistor (grounded or floating


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PDF 1550nm 9/125pm)
2010 - Not Available

Abstract: No abstract text available
Text: Features Product Specifications • Up to 10W CW output power from 400 um 0.22NA and 200um , internal thermistor, TEC, photodiode, and SMA Connector. Output fiber comes with 400 µm or 200um core , , info@lasercomponents.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: + 44 1245 491 499, Fax: + 44 1245 491 801 , ) Wavelength: 808 2 200 µm fiber HF-808-010W-45C 4 400 µm fiber Y Option (wavelength , contacting our Sales Team. Safety Caution: Laser light emitted from any diode laser is invisible and may


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PDF 200um 200um mm/808nm-mm-fiber-coupled-hhl-package-10w
2005 - Not Available

Abstract: No abstract text available
Text: Data sheet 8W / 7W 9xx nm High Power Single Emitter Laser Diode on Submount SESx-9xx-01 The Bookham SESx-9xx-01 single emitter laser diode series has been designed to provide the high output power , other high power laser diode applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at , diode • 90µm wide emitter • 8W / 7W operating power (p-side down mounted) • Highly reliable


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PDF SESx-9xx-01 SESx-9xx-01
2006 - FR4 epoxy dielectric constant 4.4

Abstract: AT84AS004 FR4 epoxy dielectric constant 4.2 FR4 dielectric constant 4.4 thickness 1.6 AT84AS004-EB HP8665 FR4 epoxy dielectric constant 3.2 FR4 dielectric constant 4.6 RO4003 w17 transistor
Text: Copper thickness = 40 µm AC signals traces = 50 microstrip lines DC signals traces (B/GB, GA, ADC Diode , Layer 15 Copper layer Copper thickness = 40 µm DC signals traces (B/GB, GA, Diode , SDA) Ground , . 4-1 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 Introduction , .4-2 DMUX Function. 4-4 Diode for Die Junction Temperature Monitoring .4-7 Test Bench


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PDF AT84AS004-EB 5432B FR4 epoxy dielectric constant 4.4 AT84AS004 FR4 epoxy dielectric constant 4.2 FR4 dielectric constant 4.4 thickness 1.6 HP8665 FR4 epoxy dielectric constant 3.2 FR4 dielectric constant 4.6 RO4003 w17 transistor
2006 - AT84AS003

Abstract: FR4 epoxy dielectric constant 4.4 digital rf delay line 4.3 GHz 142-0701-851 AT84AS0003-EB FR4 epoxy dielectric FR4 epoxy dielectric constant 4.2 100 watt RO4003 AT84AS003VTP
Text: Copper thickness = 40 µm AC signals traces = 50 microstrip lines DC signals traces (B/GB, GA, ADC Diode , Layer 15 Copper layer Copper thickness = 40 µm DC signals traces (B/GB, GA, Diode , SDA) Ground , . 4-1 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 Introduction , .4-2 DMUX Function. 4-4 Diode for Die Junction Temperature Monitoring .4-7 Test Bench


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PDF AT84AS003-EB 5426B AT84AS003 FR4 epoxy dielectric constant 4.4 digital rf delay line 4.3 GHz 142-0701-851 AT84AS0003-EB FR4 epoxy dielectric FR4 epoxy dielectric constant 4.2 100 watt RO4003 AT84AS003VTP
capacitor 100pf

Abstract: FMA3007 MIL-HDBK-263 instrumentation and control and schematic diagram
Text: ( µm ) MIN. BOND PAD OPENING ( µm x µm ) 3150 x 1780 100 220 120 x 120 2 Tel: + 44 , chip diode for temperature monitoring the gain can be automatically controlled. VG TYPICAL , TYP TYP MAX MAX UNITS UNITS Note: TAMBIENT = +25°C, Z0 = 50 1 Tel: + 44 (0 , Fax: + 44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com FMA3007 , COORDINATES ( µm ) A RF in RF in (140, 1153) B VDP (+Ve) Temperature (2097, 140


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PDF FMA3007 2-20GHZ -15dB -10dB FMA3007 2-20GHz 22A114. MIL-STD-1686 MIL-HDBK-263. capacitor 100pf MIL-HDBK-263 instrumentation and control and schematic diagram
2003 - Not Available

Abstract: No abstract text available
Text: 0.85 µm 1.0 VR = 5V IR = 10ï€ Âµ A 0.4 30 A/W 10 44 Volts VR = 2V 0.45 , LX3051 3.125 Gbps ® TM Coplanar InGaAs/InP PIN Photo Diode PRODUCTION DATA SHEET KEY , modules and combination PIN photo diode – transimpedance amplifier. LX3051 single die Coplanar , Microsemi .C OM Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and , (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test Large 75um x 75um


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PDF LX3051
2004 - 60825-1

Abstract: EN 60825-1 din en 60825-1
Text: FCC-XXXX Infrared Diode Lasers for Closed Cycle Cooled Operation - Long wavelength diode lasers - for high resolution spectroscopy beyond 10 µm and general infrared applications - available for following wavenumbers: 660 ­ 2380 cm-1 (4.2 ­ 15 µm ) Specifications min. typ. laser diode : direct , , info@laser-components.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: + 44 1245 491 499, Fax: + 44 1245 491 801 , -1 (~ 24 µm ) available on special of request Standard CP package Anode Class 1 laser, specified on


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2009 - jdsu optic switch

Abstract: 808 nm 100 mw 280/ana 808 2455-G1 TO-56 package laser diode 2400150 CW laser diode 808 nm Laser Diode 808 nm 5w TO56 package laser diode for free space communication
Text: COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features · 35 ­ 200 µm aperatures available · High-efficiency, MOCVD quantum well design · Open heat sink packages and encapsulated devices · High reliability The 24xx series diode lasers represent a , brightness family of CW diode lasers available in the industry. Applications · Solid-state laser , pattern typical of broad-area emitters. The 24xx series offer up to 8.5 W of output from a 200 µm


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PDF 498-JDSU 5378-JDSU 24XXDIODELASER jdsu optic switch 808 nm 100 mw 280/ana 808 2455-G1 TO-56 package laser diode 2400150 CW laser diode 808 nm Laser Diode 808 nm 5w TO56 package laser diode for free space communication
2005 - Not Available

Abstract: No abstract text available
Text: Data Sheet 9W 940nm High Power Single Emitter Laser Diode on C-mount SEC9-9xx-01 The Bookham SEC9-9xx-01 single emitter laser diode series has been designed to provide the high output power, high , high power laser diode applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at , attached to a C-mount. Features: • 3.6mm x 0.4mm laser diode • 90µm wide emitter • Cu C-Mount


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PDF 940nm SEC9-9xx-01 SEC9-9xx-01 60825Edition 1070nm 21CFR BH13931
2005 - SES9-975-01

Abstract: laser diode submount SES9-940-01 laser 940nm
Text: Data Sheet 9W 940nm High Power Single Emitter Laser Diode on Submount SES9-9xx-01 The Bookham SES9-9xx-01 single emitter laser diode series has been designed to provide the high output power, high , high power laser diode applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at , submount providing very low thermal resistance. Features: · 3.6mm x 0.4mm laser diode · 90µm wide


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PDF 940nm SES9-9xx-01 SES9-9xx-01 60825Edition 1070nm 21CFR BH13929 SES9-975-01 laser diode submount SES9-940-01 laser 940nm
2010 - Not Available

Abstract: No abstract text available
Text: Diodes 90 µm (6-8 W) • High Quality, Reliability, & Performance Applications • Material , available with up to 8 W of continuous output power from a 90 µm single emitter chip. Axcel’s trademark , 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS (UK) Ltd., Phone: + 44 1245 491 499, Fax: + 44 1245 491 801, info@lasercomponents.co.uk France: LASER COMPONENTS S.A.S., Phone: +33 1 , um 12 W Lasers 3.0 2.0 1.0 0.0 0 5,000 10,000 15,000 Current (mA) Determining


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PDF /axcel/mm/915nm-mm-c-mount-6-8w
2003 - LX3051

Abstract: 1550nm catv receiver Photodiode 1550nm bandwidth photodiode responsivity 1550nm 2 sensitivity dB photodiode pin 1550nm 3Gbps InGaAs Photodiode 1550nm vcsel 1310
Text: LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode , , transponders, optical transmission modules and combination PIN photo diode ­ transimpedance amplifier , ://www.microsemi.com WWW . Microsemi .C OM Microsemi's InGaAs/InP PIN Photo Diode chips are ideal for high , Design (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test , : 714-893-2570 Page 1 LX3051 3.125 Gbps I N T E G R A T E D Coplanar InGaAs/InP PIN Photo Diode P R


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PDF LX3051 LX3051 1550nm catv receiver Photodiode 1550nm bandwidth photodiode responsivity 1550nm 2 sensitivity dB photodiode pin 1550nm 3Gbps InGaAs Photodiode 1550nm vcsel 1310
2005 - 7014

Abstract: SEC9-940-01 2 Wavelength Laser Diode bookham 940
Text: Data Sheet 9W 940nm High Power Single Emitter Laser Diode on C-mount SEC9-940-01 The Bookham SEC9-940-01 single emitter laser diode series has been designed to provide the high output power, high , high power laser diode applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at , attached to a C-mount. Features: · 3.6mm x 0.4mm laser diode · 90µm wide emitter · Cu C-Mount · 9W


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PDF 940nm SEC9-940-01 SEC9-940-01 60825Edition 1070nm 21CFR BH13478 7014 2 Wavelength Laser Diode bookham 940
2005 - 2 Wavelength Laser Diode

Abstract: bookham 940 SES9-940-01
Text: Data Sheet 9W 940nm High Power Single Emitter Laser Diode on Submount SES9-940-01 The Bookham SES9-940-01 single emitter laser diode series has been designed to provide the high output power, high , high power laser diode applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at , submount providing very low thermal resistance. Features: · 3.6mm x 0.4mm laser diode · 90µm wide


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PDF 940nm SES9-940-01 SES9-940-01 60825Edition 1070nm 21CFR BH13477 2 Wavelength Laser Diode bookham 940
2008 - Not Available

Abstract: No abstract text available
Text: ) 0.25 (6.4) Hole, 0.09 (2.3) Dia. Counterbore, 0.18 ( 4.4 ) Dia. 0.05 (1.2) Deep 24XX SERIES DIODE , COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features · 35 ­ 200 µm aperatures available · High-efficiency, MOCVD quantum well design · Open heat sink packages and encapsulated devices · High reliability The 24xx series diode lasers represent a , brightness family of CW diode lasers available in the industry. The 24xx series consists of partially


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PDF 498-JDSU 5378-JDSU 24XXDIODELASER
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