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Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IN Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1336CN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver

ufn833 mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
UFN833

Abstract: UFN832 ufn833 mosfet
Text: 10774 D 500 Volt, 1.5 Ohm N-Channel POWER MOSFET TRANSISTORS UFN830 UFN831 UFN832 UFN833 , Breakdown · Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the , transconductance. The Unitrode power MOSFET features all of the advantages of M O S technology such as voltage , UFN831 UFN832 UFN833 VDS RoS(on) 1.50 1.50 2 .on 2 .0 0 Id 4.5A 4.5A 4.0A 4.0A 500V 450V 500V , ^^ 347^ 3 0010775 9347963 U N I T R O D E CORP 92D UFN830 10775 UFN831 D UFN832 UFN833


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PDF 1347clb3 UFN830 UFN831 UFN832 UFN833 UFN833 ufn833 mosfet
USD1120 ZENER

Abstract: USD1120 USD1120 diode VARO VM68 UFS1002 UFN833 AIC3842CSTR AIC3842 ds3842 VM68
Text: circuitry and power ground. PIN 6: OUTPUT- This output directly drives the gate of a power MOSFET , direct drive of power MOSFET . If any undervoltage PWM Latch is used to ensure that only a single , 6 22 3 Q1 R8 1k C7 470pF 0.0022µF 16V UFN833 R13 10K R10 0.55 1W


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PDF AIC3842 500KHz AIC3842 USD1120 ZENER USD1120 USD1120 diode VARO VM68 UFS1002 UFN833 AIC3842CSTR ds3842 VM68
2005 - USD1120 ZENER

Abstract: USD1120 diode
Text: ground. PIN 6: OUTPUT- This output directly drives the gate of a power MOSFET . Peak currents up to , specifically designed for PWM Latch is used to ensure that only a single direct drive of power MOSFET . If , UFN833 R13 10K R10 0.55Ω 1W D5 1N3613 USD1120 C8 680pF R11 2.7k 2W Power Supply


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PDF AIC3843 500KHz AIC3843 USD1120 ZENER USD1120 diode
2004 - USD1120 diode

Abstract: UFS1002
Text: 0.55Ω 1W C8 680pF UFN833 1k C6 16V D5 1N3613 R11 2.7k 2W USD1120 Power , amplifier. connected It to is through a resistor divider. voltage gate of a power MOSFET , power MOSFET . If any under voltage at a given frequency. lockout is detected, internal circuitry


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PDF AIC3843 500KHz AIC3843 USD1120 diode UFS1002
2005 - USD1120 ZENER

Abstract: USD1120 diode USD1120
Text: drives the gate of a power MOSFET . Peak currents up to 1A are sourced and sunk by this pin. PIN 7 , specifically designed for direct drive of power MOSFET . If any undervoltage PWM Latch is used to ensure , 470pF 0.0022µF 16V UFN833 R13 10K R10 0.55Ω 1W D5 1N3613 USD1120 C8 680pF


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PDF AIC3842 500KHz AIC3842 USD1120 ZENER USD1120 diode USD1120
2004 - Not Available

Abstract: No abstract text available
Text: ground. PIN 6: OUTPUT- This output directly drives the gate of a power MOSFET . Peak currents up to , specifically designed for PWM Latch is used to ensure that only a single direct drive of power MOSFET . If , UFN833 R13 10K R10 0.55Ω 1W D5 1N3613 USD1120 C8 680pF R11 2.7k 2W Power Supply


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PDF AIC3843 500KHz AIC3843
USD1120

Abstract: USD1120 ZENER VARO VM68 UFS1002 diode USD1120 3A1 zener diode 3843G UFN833 USD1120 datasheet USD1120 diode
Text: ground. PIN 6: OUTPUT- This output directly drives the gate of a power MOSFET . Peak currents up to , specifically designed for PWM Latch is used to ensure that only a single direct drive of power MOSFET . If , 6 22 3 Q1 R8 1k C7 470pF 0.0022µF 16V UFN833 R13 10K R10 0.55 1W


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PDF AIC3843 500KHz AIC3843 USD1120 USD1120 ZENER VARO VM68 UFS1002 diode USD1120 3A1 zener diode 3843G UFN833 USD1120 datasheet USD1120 diode
2004 - Not Available

Abstract: No abstract text available
Text: drives the gate of a power MOSFET . Peak currents up to 1A are sourced and sunk by this pin. PIN 7 , specifically designed for direct drive of power MOSFET . If any undervoltage PWM Latch is used to ensure , 470pF 0.0022µF 16V UFN833 R13 10K R10 0.55Ω 1W D5 1N3613 USD1120 C8 680pF


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PDF AIC3842 500KHz AIC3842
AIC3843

Abstract: USD1120 diode USD1120 VARO VM68 UFS1002 diode USD1120 UFN833 USD1120 ZENER ufn833 mosfet USD1120 datasheet
Text: C10 4700 µF 10V N5 3300pF R7 6 22 3 4 5 Q1 R8 UFN833 1k C7 470pF , amplifier. connected It to is through a resistor divider. voltage gate of a power MOSFET , deadtime drive of power MOSFET . If any under voltage at a given frequency. lockout is detected


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PDF AIC3843 AIC3843 USD1120 diode USD1120 VARO VM68 UFS1002 diode USD1120 UFN833 USD1120 ZENER ufn833 mosfet USD1120 datasheet
aic3842

Abstract: USD1120 USD1120 diode UFN833 diode USD1120 USD1120 ZENER UFS1002 VARO VM68 AIC 3842 AN USD1120 datasheet
Text: N5 3300pF R7 6 22 3 4 5 Q1 R8 1k C7 470pF 0.0022µ F 16V UFN833 R13 , MOSFET . the Peak currents up to 1A are through a resistor divider. voltage and PIN 6 , output deadtime drive of power MOSFET . If any undervoltage at a given frequency. lockout is


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PDF AIC3842 AIC3842 USD1120 USD1120 diode UFN833 diode USD1120 USD1120 ZENER UFS1002 VARO VM68 AIC 3842 AN USD1120 datasheet
2015 - 5962-8670407

Abstract: No abstract text available
Text: characteristics as normal operation, it can easily sink 1 mA, enough to ensure the MOSFET is held off , single totem-pole output which can be operated to ±1-A peak for driving MOSFET gates, and a +200 mA , MOSFET . The value is determined by dividing the totem-pole collector voltage VC by the peak current , control IC is not electrically isolated from the MOSFET turn-on and turn-off to ±1 A. It also provides , shows an isolated MOSFET drive circuit which is appropriate when the drive signal must be level shifted


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PDF UC1842A-SP, UC1843A-SP, UC1844A-SP SLUS872D UC184xA-SP 5962-8670407
1995 - Not Available

Abstract: No abstract text available
Text: USD1120 1 k C7 470 pF R13 20 k R10 0.55 1W D8 1N3613 R11 2.7 k 2W Q1 UFN833 C8 680 pF 600 V C11 4700 mF


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PDF UC1843-SP SLUS981 500-kHz
2009 - Not Available

Abstract: No abstract text available
Text: 1N3613 R11 2.7 k 2W Q1 UFN833 C8 680 pF 600 V C11 4700 mF 10 V COM NP ±12 V COM 2 R5 150 k C14


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PDF UC1843-HiRel SLUS896A 500-kHz UC1843
1995 - USD1120 ZENER

Abstract: USD1120 diode USD1120 U9D946 smd transistor marking zf
Text: UES1002 1 C14 UC1843M R7 22 Ω 100 pF 8 Q1 UFN833 6 C8 680 pF 600 V R8


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PDF UC1843-SP SLUS981 500-kHz USD1120 ZENER USD1120 diode USD1120 U9D946 smd transistor marking zf
1995 - USD1120 diode

Abstract: SmD TRANSISTOR a42 PIN CONFIGURATION IC RT 3060 smd diode marking jg U9D946 TRANSISTOR SMd jg data diode USD1120 USD1120
Text: USD1120 1 k C7 470 pF R13 20 k R10 0.55 1W D8 1N3613 R11 2.7 k 2W Q1 UFN833 C8 680 pF 600 V C11 4700 mF


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PDF UC1843-SP SLUS981 500-kHz USD1120 diode SmD TRANSISTOR a42 PIN CONFIGURATION IC RT 3060 smd diode marking jg U9D946 TRANSISTOR SMd jg data diode USD1120 USD1120
2008 - UC2843A-Q1

Abstract: No abstract text available
Text: 3 5 USD1120 R7 22 W Q1 UFN833 C8 680 pF 600V R11 2.7 kW 2W C5 .01 µF 4 C6 .0022 µF


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PDF UC2843A-Q1 SGLS384 500-kHz UC2843A-Q1
2015 - Not Available

Abstract: No abstract text available
Text: sink 1 mA, enough to ensure the MOSFET is held off. Submit Documentation Feedback Copyright  , PWM has a single totem-pole output which can be operated to ±1-A peak for driving MOSFET gates, and , of the MOSFET . The value is determined by dividing the totem-pole collector voltage VC by the peak , control IC is not electrically isolated from the MOSFET turn-on and turn-off to ±1 A. It also provides , shows an isolated MOSFET drive circuit which is appropriate when the drive signal must be level shifted


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PDF UC1845A-SP SLUSC14 UC1845A-SP 5962P8670411Vxx: MIL-STD-883
2008 - varo vm 68

Abstract: UC2843A-Q1
Text: 3 5 USD1120 R7 22 W Q1 UFN833 C8 680 pF 600V R11 2.7 kW 2W C5 .01 µF 4 C6 .0022 µF


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PDF UC2843A-Q1 SGLS384 500-kHz varo vm 68 UC2843A-Q1
2008 - USD1120

Abstract: USD1120 ZENER varo vm 68 ufn833 UC2843A-Q1
Text: 3 5 USD1120 R7 22 W Q1 UFN833 C8 680 pF 600V R11 2.7 kW 2W C5 .01 µF 4 C6 .0022 µF


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PDF UC2843A-Q1 SGLS384 500-kHz USD1120 USD1120 ZENER varo vm 68 ufn833 UC2843A-Q1
2009 - U9D946

Abstract: No abstract text available
Text: C14 UC1843M R7 22 Ω 100 pF 8 Q1 UFN833 6 R8 R6 10 kΩ C5 0.01 mF ±12 V


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PDF UC1843-HiRel SLUS896A U9D946
2008 - UC2843A-Q1

Abstract: No abstract text available
Text: 3 5 USD1120 R7 22 W Q1 UFN833 C8 680 pF 600V R11 2.7 kW 2W C5 .01 µF 4 C6 .0022 µF


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PDF UC2843A-Q1 SGLS384 500-kHz UC2843A-Q1
1997 - USD1120 ZENER

Abstract: USD1120 USD1120 diode diode USD1120 uc38448 U9D946 varo vm 68 UFN833 UF81002 C549C
Text: 22 Q1 UFN833 C8 680 pF 600 V C11 4700 µF 10 V COM ±12 V COM R5 150 k C14 100 pF 2 1 7


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PDF UC1842/3/4/5 UC2842/3/4/5 UC3842/3/4/5 SLUS223B 500-kHz 130VA UC1842/3 USD1120 ZENER USD1120 USD1120 diode diode USD1120 uc38448 U9D946 varo vm 68 UFN833 UF81002 C549C
2009 - USD1120

Abstract: UFN833 varo vm 68 USD1120 diode USD1120 datasheet diode USD1120 U9D946 Varo Semiconductor ufn833 UF81002 USD1120 ZENER
Text: 22 100 pF 8 Q1 UFN833 6 R8 R6 10 k C5 0.01 mF ±12 V COM C13 2200 mF 16 V


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PDF UC1843-HiRel SLUS896A 500-kHz USD1120 UFN833 varo vm 68 USD1120 diode USD1120 datasheet diode USD1120 U9D946 Varo Semiconductor ufn833 UF81002 USD1120 ZENER
2009 - USD1120

Abstract: USD1120 ZENER USD1120 diode UFN833 varo vm 68 diode USD1120 Varo Semiconductor ufn833 ufn833 data USD112 U9D946
Text: 1N3613 R11 2.7 k 2W Q1 UFN833 C8 680 pF 600 V C11 4700 mF 10 V COM NP ±12 V COM 2 R5 150 k C14


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PDF UC1843-HiRel SLUS896A 500-kHz UC1843 USD1120 USD1120 ZENER USD1120 diode UFN833 varo vm 68 diode USD1120 Varo Semiconductor ufn833 ufn833 data USD112 U9D946
2008 - UC2843A-Q1

Abstract: No abstract text available
Text: UC2843A 8 Q1 UFN833 6 R6 10 kW C5 .01 µF C11 4700 µF 10 V NP D2 1N3612


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PDF UC2843A-Q1 SGLS384 UC2843A-Q1
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