1999 - Not Available
Abstract: No abstract text available
Text: ) µPD4564441G5-A80-9JF µPD4564441G5-A10-9JF µPD4564441G5-A10B-9JF µPD4564841G5-A80-9JF µPD4564841G5-A10-9JF µPD4564841G5-A10B-9JF µPD4564163G5-A80-9JF µPD4564163G5-A10-9JF µPD4564163G5-A10B-9JF µPD4564441G5-A80L-9JF µPD4564441G5-A10L-9JF µPD4564441G5-A10BL-9JF µPD4564841G5-A80L-9JF µPD4564841G5-A10L-9JF µPD4564841G5-A10BL , DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441 , 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441 , 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic
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PD4564441,
64M-bit
864-bit
54-pin
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1996 - uPD4564163G5-A80-9JF
Abstract: A80-9JF NEC MEMORY UPD4564441G5-A10-9JF
Text: Corporation 1996 µPD4564441 ,4564841,4564163 Ordering Information Part number µPD4564441G5-A80-9JF , TSOP(II) 100 (400 mil) µPD4564441G5-A10-9JF µPD4564841G5-A80-9JF 2M x 8 x 4 , DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441 ,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441 , 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic , Package µPD4564441 ,4564841,4564163 Part Number [ x4, x8 ] µ PD4564841G5 - A80 NEC Memory
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PD4564441
PD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
uPD4564163G5-A80-9JF
A80-9JF
NEC MEMORY
UPD4564441G5-A10-9JF
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LX 2262
Abstract: No abstract text available
Text: ¿¿PD4564163G5-A10-9JF 1M x 1 6 x 4 2M x 8 x 4 4M x 4 x 4 UPD4564441.4564841.4564163 Clock frequency MHz (MAX.) 125 , Number UPD4564441.4564841.4564163 [ x 4 , x 8 ] ¿ ¿ P D 4564841G5 A80 NEC Memory , . [/¿PD4564441] UPD4564441.4564841.4564163 54-pin Plastic TSOP(II) (400mil) 4M words x 4 bits x 4 banks , UPD4564441.4564841.4564163 [/¿PD4564841] 54-pin Plastic TSOP(II) (400miI) 2M words x 8 bits x 4 banks V , Column address inputs Bank select 5 NEC UPD4564441.4564841.4564163 [/¿PD4564163] 54
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uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
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Not Available
Abstract: No abstract text available
Text: for Read T im in g (M an ual Precharge, B u rs t le n g th 4, C A S laten cy = 3) UPD4564441.4564841 , CKE CS RAS CAS WE A13 A12 AIO ADD UPD4564441.4564841 DQM DQ t B aakA Activate Command B ank , ADD UPD4564441.4564841 DQM DQ t B ank D Activate C om m and t B ank D W rite Com m and , , 6 Â § , W E - Low) The mPD 4564 x x x UPD4564441. 4564841 CKE es H h a s a m o d e re g , PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441 , uPD4564841 64M
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uPD4564441
uPD4564841
64M-bit
PD4564441
864-bit
304x4x4
152x8x4
54-pin
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2001 - E014
Abstract: upd4564163g5a10b
Text: × 4 125 54-pin Plastic TSOP (II) µPD4564441G5-A10-9JF 100 (10.16mm (400) µPD4564441G5-A10B-9JF 100 Part number µPD4564441G5-A80-9JF µPD4564841G5-A80-9JF 2M × 8 × 4 125 , DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441 , 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441 , 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic , joint venture DRAM company of NEC Corporation and Hitachi, Ltd. µPD4564441 , 4564841, 4564163
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PD4564441,
64M-bit
864-bit
54-pin
M01E0107
E014
upd4564163g5a10b
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1998 - NEC MEMORY
Abstract: mark t6 UPD4564163G5-A10-9JF
Text: -pin Plastic TSOP (II) (400 mil) µPD4564441G5-A80-9JF µPD4564441G5-A10-9JF µPD4564441G5-A10B-9JF , -9JF µPD4564163G5-A10B-9JF µPD4564441G5-A80L-9JF µPD4564441G5-A10L-9JF µPD4564441G5-A10BL-9JF µPD4564841G5-A80L , DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441 , 4564841, 4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441 , 4564841, 4564163 are high-speed 67,108,864 , revised points. © 1997 µPD4564441 , 4564841, 4564163 for Rev. E Ordering Information Part number
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PDF
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PD4564441,
64M-bit
864-bit
54-pin
NEC MEMORY
mark t6
UPD4564163G5-A10-9JF
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1997 - UPD4564163G5-A10B
Abstract: uPD4564841G5-A10-9JF UPD4564163G5A10L9JF
Text: µPD4564441G5-A80-9JF µPD4564441G5-A10-9JF µPD4564441G5-A10B-9JF µPD4564841G5-A80-9JF µPD4564841G5-A10-9JF µPD4564841G5-A10B-9JF µPD4564163G5-A80-9JF µPD4564163G5-A10-9JF µPD4564163G5-A10B-9JF µPD4564441G5-A80L-9JF µPD4564441G5-A10L-9JF µPD4564441G5-A10BL-9JF µPD4564841G5-A80L-9JF µPD4564841G5-A10L-9JF µPD4564841G5-A10BL , PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441 ,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441 , 4564841, 4564163 are high-speed 67,108,864
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PD4564441
PD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
UPD4564163G5-A10B
uPD4564841G5-A10-9JF
UPD4564163G5A10L9JF
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NEC MEMORY
Abstract: p77 cac uPD4564441
Text: revised points. © 1997 µPD4564441 , 4564841, 4564163 5 Ordering Information Part number µPD4564441G5-A80-9JF Organization (word × bit × bank) Clock frequency MHz (MAX.) Package 4M × 4 × 4 125 54-pin Plastic TSOP (II) 100 (10.16mm (400) µPD4564441G5-A10-9JF µPD4564441G5-A10B-9JF , DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441 , 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441 , 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic
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PDF
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PD4564441,
64M-bit
864-bit
54-pin
NEC MEMORY
p77 cac
uPD4564441
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1997 - Not Available
Abstract: No abstract text available
Text: -pin Plastic TSOP(II) (400mil) µPD4564441G5-A80-9JF µPD4564441G5-A10-9JF µPD4564441G5-A12-9JF , ) µPD4564441G5-9JF VCC NC VCCQ NC DQ0 VSSQ NC NC VCCQ NC DQ1 VSSQ NC VCC NC WE CAS RAS CS A13 A12 A10 A0 A1 A2 , PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441 , 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441 , 4564841 are high-speed 67,108,864-bit synchronous , 1992 µPD4564441 , 4564841 Ordering Information Part number Organization (word × bit × bank) 4M×4×4
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PD4564441,
64M-bit
864-bit
54-pin
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integrated circuit TL 2262
Abstract: TL 2262 integrated circuit tl 2262 am
Text: - r m n n jr T L r m j- L T i- r ir L r L r ^ ^ UPD4564441.4564841 , Tl8 TlS T 20 T 21 CLK UPD4564441.4564841 Bank A Actívale Bank A Write Command 1 , UPD4564441.4564841 CBR-refrafa NEC 13.11 S a H Rafraah (antry and axit) UPD4564441 ,4564841 , ^ - n - r ^ UPD4564441.4564841 Blank uk A A Activate Command 1 Bâille Bank A , ""'" 1 '* C8 H L L I L L L L Row activa L L L L L UPD4564441. 4564841 (1/3) Address X X
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uPD4564441
uPD4564841
864-bit
304x4x4
152x8x4
54-pin
integrated circuit TL 2262
TL 2262 integrated circuit
tl 2262 am
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1998 - apd456
Abstract: No abstract text available
Text: Preliminary Data Sheet NEC uPD4564441.4564841 ,4564163 for Rev. E @PD4564163] 54-pin Plastic TSOP , Sheet 19 NEC 5. lnitialization uPD4564441.4564841 ,4564163 for Rev. E The synchronous , Preliminary Data Sheet NEC 12.2.2 Precharge Termination in WRITE Cycle uPD4564441.4564841.4564163 , NEC Ordering Information Part number uPD4564441 ,4564841,4564163 for Rev. E Organization , uPD4564441 ,4564841,4564163 for Rev. E uPD456d84h G5 - A80L DRAM 64 : 64M bits _II I I I I I I I
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pPD4564441
pPD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
apd456
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MEC 1310 nu
Abstract: 4564841G db3 bl
Text: X X X X X X X X X uPD4564441. 4564841 CKE CS n X X X X X X X X X X X X X X X X X X X X X X X , . Burst Termination UPD4564441. 4564841 There are two methods to terminate a burst operation other , b427S2S O lQ SnS 31Ö NEC UPD4564441. 4564841 (1/2) Maximum Unit Notes x4 x8 -80 -10 -12 CL , time te n tA CJ tA C 2 tCH UPD4564441. 4564841 MIN. 8 12 -10 -80 MAX. MIN. MAX. MIN , PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441 , 4564841 64M-bit Synchronous
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uPD4564441
64M-bit
PD4564441
864-bit
304x4x4
152x8x4
54-pin
U-031
S54G5-60
b4275B5
MEC 1310 nu
4564841G
db3 bl
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CDC2509
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : , uPD4564441 (Revision E) are assembled. This module , M em ory Module 18 pieces of / ¿PD4564441G5 (Revision E) M Hz (MAX.) M C -4516DA726F-A80 , : , uPD4564441 (Revision E)(4M words x 4 bits x 4 banks) 3. REGE < Vih : Buffer mode 4. R e g is te r
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MC-4516DA726
72-BIT
MC-4516DA726
uPD4564441
CDC2509
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1996 - MC4516CA724F-A10
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA724 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M SDRAM : µPD4564441 are assembled. This module provides high , connector : Gold plated 33.02 mm (1.3 inch) height Mounted devices 18 pieces of µPD4564441G5 (400 mil , Remarks 1. The value of all resistors is 10 except CKE1. 2. D0 - D17 : µPD4564441 (4M words × 4 bits × 4
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MC-4516CA724
72-BIT
MC-4516CA724
PD4564441
MC-4516CA724-A10
MC-4516CA724-A12
MC4516CA724F-A10
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Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : , uPD4564441 are assembled. This module provides , Module 18 pieces of / ¿PD4564441G5 (Revision L) M Hz (MAX.) M C -4516DA727LF-A75 133 MHz , : , uPD4564441 (4M words x 4 bits x 4 banks) 3. REGE < V il : Buffer mode 4. REGE > Vih : Register mode R e
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MC-4516DA727
16M-WORD
72-BIT
MC-4516DA727
uPD4564441
C-4516DA727-A75
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1999 - MA2180
Abstract: No abstract text available
Text: dynamic RAM module on which 18 pieces of 64M SDRAM: µPD4564441 are assembled. This module provides high , pieces of µPD4564441G5 (Rev. E) (400 mil TSOP (II) 18 pieces of µPD4564441G5 (Rev. L) (400 mil TSOP (II , 1. The value of all resistors of DQs is 10 . 2. D0 - D17: µPD4564441 (4M words × 4 bits × 4 banks) 3 , /RCS0 LE VCC 10 k Remarks 1. The value of all resistors of DQs is 10 . 2. D0 - D17: µPD4564441 (4M
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MC-4516DA726
72-BIT
MC-4516DA726
PD4564441
MC-4516DA726F-A80,
MC-4516DA726LF-A80
MC-4516DA726F-A10,
MC-4516DA726LF-A10
MA2180
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1998 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564441 are assembled. This module provides high , Memory Module 18 pieces of 64M SDRAM : µPD4564441G5 (Socket Type) MC-4516DA72F-A12 83 MHz Edge connector , outputs from the PLL CLOCK BUFFER shall be equal length. 2. D1 - D18 : µPD4564441 (4M words × 4 bits × 4
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MC-4516DA72
72-BIT
MC-4516DA72
PD4564441
MC-4516DC72-A10
MC-4516DC72-A12
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M168S-50A93
Abstract: MC-4516DA726 MC-4516DA726F-A10 MC-4516DA726F-A80 MC-4516DA726LF-A10 MC-4516DA726LF-A80
Text: dynamic RAM module on which 18 pieces of 64M SDRAM: µPD4564441 are assembled. This module provides high , pieces of µPD4564441G5 (Rev. E) MC-4516DA726F-A10 100 MHz (Socket Type) (400 mil TSOP (II) 5 MC-4516DA726LF-A80 125 MHz Edge connector : Gold plated 18 pieces of µPD4564441G5 (Rev , : µPD4564441 (4M words × 4 bits × 4 banks) REGE VIL: Buffer mode REGE VIH: Register mode 5. Register
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MC-4516DA726
72-BIT
MC-4516DA726
PD4564441
MC-4516ne
M168S-50A93
MC-4516DA726F-A10
MC-4516DA726F-A80
MC-4516DA726LF-A10
MC-4516DA726LF-A80
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1997 - Not Available
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564441 are assembled. This module , pieces of 64M SDRAM : µPD4564441G5 (400 mil TSOP (II) [Double side] 2 MC-4516DA72 Pin , PLL CLOCK BUFFER shall be equal length. 2. D1 - D18 : µPD4564441 (4M words × 4 bits × 4 banks) 4
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MC-4516DA72
72-BIT
MC-4516DA72
PD4564441
MC-4516DA72-A10
MC-4516DA72-A12
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C4516DA72
Abstract: MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726F, MC-4516DA726LF, MC-4516DA726LFB are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: uPD4564441 are , /CS Remarks 1. The value of all resistors of DQs is 10 £1 2. DO - D17: , uPD4564441 (4M words x 4 , value of all resistors of DQs is 10 £2. 2. DO - D17: , uPD4564441 (4M words x 4 bits x 4 banks) 3. REGE
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MC-4516DA726
72-BIT
MC-4516DA726F,
MC-4516DA726LF,
MC-4516DA726LFB
uPD4564441
MC-4516DA726EFC
uPD45128841
M168S-50A107
13203EJ6V0D
C4516DA72
MC-4516DA726
MC-4516DA726F-A80
MC-4516DA726LF-A80
PD45128841
CDC2509
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1998 - MC-4516DA72F-A10
Abstract: MC-4516DA72F-A10B MC-4516DA72F-A80
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564441 (Rev. E) are assembled. This module , 18 pieces of 64M SDRAM : µPD4564441G5 (Rev. E) (400 mil TSOP (II) [Double side] MC , : µPD4564441 (Rev. E) (4M words × 4 bits × 4 banks) 4 MC-4516DA72 Electrical Specifications · All
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MC-4516DA72
72-BIT
MC-4516DA72
PD4564441
MC-4516DA72F-A10
MC-4516DA72F-A10B
MC-4516DA72F-A80
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1998 - CDC2509
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564441 (Revision E) are assembled. This module , -4516DA726F-A80 125 MHz 168-pin Dual In-line Memory Module 18 pieces of µPD4564441G5 (Revision E) (Socket Type) MC , , PLL Remarks 1. The value of all resistors of DQs is 10 . 2. U1 - U9, U15 - U23 : µPD4564441
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MC-4516DA726
72-BIT
MC-4516DA726
PD4564441
MC-4516DA726-A80
MC-4516DA726-A10
CDC2509
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1999 - Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564441 are assembled. This module provides high , frequency MHz (MAX.) MC-4516DA727LF-A75 133 MHz 168-pin Dual In-line Memory Module 18 pieces of µPD4564441G5 , DQs is 10 . 2. D0 - D17 : µPD4564441 (4M words × 4 bits × 4 banks) 3. REGE VIL : Buffer mode REGE VIH
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MC-4516DA727
16M-WORD
72-BIT
MC-4516DA727
PD4564441
MC-4516DA727-A75
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1998 - MC-4532DC726FA-A10
Abstract: D18 D16 family nec MC-4532DC726-A10
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DC726 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 64 M SDRAM : µPD4564441 (Rev. E) are assembled. This module , µPD4564441G5 (Rev. E) (Socket Type) MC-4532DC726FA-A10 100 MHz Edge connector : Gold plated 43.18 mm , are 10 . 2. WP is not used yet. It is connected to ground. 3. D0 - D35 : µPD4564441 (Rev. E) (4M
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MC-4532DC726
72-BIT
MC-4532DC726
PD4564441
MC-4532DC726-A80
MC-4532DC726FA-A10
D18 D16 family nec
MC-4532DC726-A10
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2000 - A80L
Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Text: (322) - × × 64M 4M×4×4 µPD4564441 A75 3 133 MAX.(ns) MAX.(mA) 5.4 1 CDROM , 133 A10 3 2 128M 16M×72 1 MC-4516DA727 A75 3 µPD4564441G5 ×18pcs. PC133
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X13769XJ2V0CD00
DRAMSDR256M×
8K/64
54pin
A10BL
PC100
400mil)
PC133
A80L
PC100
4M84
2M164
upd432836
uPD432836AL
0443 IC
512k*8 sram 450 mil
uPD432836L
PC133-333
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