1997 - Not Available
Abstract: No abstract text available
Text: . µPD4516821 , . 50 CHAPTER 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 µPD4516821 , CS A11 Pin Name 50 CHAPTER 5 µPD4516821 5.1 Features · 1,048,576 words × 8 bits × 2 , CHAPTER 5 µPD4516821 5.2 Evaluation Data (1/2) Temperature Parameter ICC ICC1 CL=3 CL=2 ICC2P , mA mA mA mA mA V V V V V V V V V V V V V V V V V V V V 52 CHAPTER 5 µPD4516821 (2/2
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M12947XJ1V0IF00
PD4516421
PD4516821
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nec d4516
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT uPD4516421, uPD4516821 , uPD4516161 16M , uPD4516421, uPD4516821 , uPD4516161 CONTENTS 4. Truth Table . 14 4.1 4.2 4.3 4.4 4.5 4.6 C om m and T , command (CS, CAS, WE = Low, RAS = High) uPD4516421, uPD4516821 , uPD4516161 CLK CKE CS RAS If the m , u to p ré c h a rg é L H H H NOP H RAS X uPD4516421, uPD4516821 , uPD4516161 (2/3) CAS X WE , e s s in g L L L L H H H L L L L X uPD4516421, uPD4516821 , uPD4516161 (3/3) RAS X CAS X
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uPD4516421
uPD4516821
uPD4516161
16M-bit
tPD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
nec d4516
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d4516161
Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421, uPD4516821 , uPD4516161 16M , uPD4516421, uPD4516821 , uPD4516161 Clock Suspention during Burst Read (using CKE Function) . 848 Clock , uPD4516421, uPD4516821 , uPD4516161 CKE CS n X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X , -A 0 X X X NOP NOP BST uPD4516421, uPD4516821 , uPD4516161 Action " FROM " State Any A ny 1R/W , address (A ll) 821 NEC 2. State abbreviations I = Idle A = Row active uPD4516421, uPD4516821
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uPD4516421
uPD4516821
uPD4516161
16M-bit
PD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
d4516161
NEC 1216
D451616
4516161
IC-3394
ba6x
T8836
D4516161GS
d4516
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NEC 977
Abstract: No abstract text available
Text: D A T A SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421, uPD4516821 , uPD4516161 16M-bit Synchronous DRAM D escription The jj PD 4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random -access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 (wordxbitxbank), respectively. The synchronous DRAM s achieve high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAM
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uPD4516421
uPD4516821
uPD4516161
16M-bit
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
NEC 977
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1995 - MA2180
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 454BC72 MOS INTEGRATED CIRCUIT MC-454BC72 4 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BC72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : µPD4516821 are assembled. This module , : Gold plated Mounted devices 18 pieces of 16M SDRAM : µPD4516821 (400 mil TSOP (II) [Double side , - D18 : µPD4516821 (1M word × 8 bits × 2 banks) 4 MC-454BC72 Electrical Specifications
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454BC72
MC-454BC72
72-BIT
MC-454BC72
PD4516821
MA2180
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1995 - MC452AB644F-A67
Abstract: MC-452AB644F-A67 MC-452AB644F NEC AND 1995 AND sdram
Text: (1.15 inch) height Mounted devices 8 pieces of µPD4516821G5 (400 mil TSOP (II) [Single side] 8 pieces of µPD4516821G5-PC (400 mil TSOP (II) SDRAM Lite [Single side] 8 pieces of µPD4516821G5 (400 mil , synchronous dynamic RAM module on which 8 pieces of 16 M SDRAM : µPD4516821 are assembled. This module , 2. D0 - D7 : µPD4516821 (1M words x 8 bits x 2 banks) 4 MC-452AB644 Electrical
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MC-452AB644
64-BIT
MC-452AB644
PD4516821
MC-452AB644-A10
MC452AB644F-A67
MC-452AB644F-A67
MC-452AB644F
NEC AND 1995 AND sdram
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1995 - 04H-0BH
Abstract: NEC AND 1995 AND sdram
Text: µPD4516821G5 (400 mil TSOP (II) [Single side] 8 pieces of µPD4516821G5-PC (400 mil TSOP (II) SDRAM Lite [Single side] 8 pieces of µPD4516821G5 (400 mil TSOP (II) [Single side] MC-452AB64S-A12 83 MHz 2 , dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16M SDRAM: µPD4516821 are assembled. This , - D7 /CAS: D0 - D7 CKE: D0 - D7 Remark D0 - D7 : µPD4516821 (1M words x 8 bits x 2 banks) 4
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MC-452AB64S
64-BIT
MC-452AB64S
PD4516821
MC-452AB64S-A10
04H-0BH
NEC AND 1995 AND sdram
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1995 - Not Available
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-452BA72 2 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-452BA72 is a 2,097,152 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 16 M SDRAM : µPD4516821 are assembled. This module , pieces of 16M SDRAM : µPD4516821G5 (400 mil TSOP (II) [Single side] 2 MC-452BA72 Pin , . D0 - D8 : µPD4516821 (1M word × 8 bits × 2 banks) MC-452BA72 Electrical Specifications
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MC-452BA72
72-BIT
MC-452BA72
PD4516821
MC-452BA72-A10
MC-452BA72-A12
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Not Available
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421, uPD4516821 , uPD4516161 16M-bit Synchronous DRAM Description The uPD4516421, uPD4516821 , uPD4516161 are high-speed 16,777,216 , , uPD4516821 , uPD4516161 CKE n * CS X RAS X X CAS X X WE X X X X X X X X X X X X X X X X X , Precharge uPD4516421, uPD4516821 , uPD4516161 During a read or write command cycle, A10 controls , 10 7 2 3 1 5 2 -1 0 uPD4516421, uPD4516821 , uPD4516161 -1 2 15 66 2 2 4 7 5 2 2 1 3 2 12 63 3 3
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uPD4516421
uPD4516821
uPD4516161
16M-bit
216-bit
44-pin
50-pin
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1995 - MC454AD644F-A10
Abstract: MC-454AD644F-A67 MC454AD644F-A67 m11901
Text: 16 pieces of µPD4516821G5 (400 mil TSOP (II) [Double side] 16 pieces of µPD4516821G5-PC (400 mil TSOP (II) SDRAM Lite [Double side] 16 pieces of µPD4516821G5 (400 mil TSOP (II) [Double side] Z , synchronous dynamic RAM module on which 16 pieces of 16 M SDRAM : µPD4516821 are assembled. This module , except CKE1. 2. D0 - D15 : µPD4516821 (1M word × 8 bits × 2 banks) 4 MC-454AD644 Electrical
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MC-454AD644
64-BIT
MC-454AD644
PD4516821
MC-454AD644-A10
MC454AD644F-A10
MC-454AD644F-A67
MC454AD644F-A67
m11901
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1995 - Not Available
Abstract: No abstract text available
Text: Mounted devices 9 pieces of µPD4516821G5 (400 mil TSOP (II) [Single side] 9 pieces of µPD4516821G5-PC (400 mil TSOP (II) SDRAM Lite [Single side] 9 pieces of µPD4516821G5 (400 mil TSOP (II) [Single side , dynamic RAM module on which 9 pieces of 16 M SDRAM : µPD4516821 are assembled. This module provides high , resistors is 10 . 2. D0 - D8 : µPD4516821 (1M word × 8 bits × 2 banks) 4 MC-452AA724 Electrical
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MC-452AA724
72-BIT
MC-452AA724
PD4516821
MC-452AA724-A10
MC-452Aots
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1995 - max9036
Abstract: No abstract text available
Text: ) height Mounted devices 18 pieces of µPD4516821G5 (400 mil TSOP (II) [Double side] 18 pieces of µPD4516821G5-PC (400 mil TSOP (II) SDRAM Lite [Double side] 18 pieces of µPD4516821G5 (400 mil TSOP (II) [Double , synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : µPD4516821 are assembled. This module , D17 : µPD4516821 (1M word x 8 words x 2 banks) 4 MC-454AC724 Electrical Specifications
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MC-454AC724
72-BIT
MC-454AC724
PD4516821
MC-454AC724-A10
max9036
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Not Available
Abstract: No abstract text available
Text: pieces of 16M SDRAM : uPD4516821 (400mif TSOP (It) (Double side] 242 NEC Pin Configuration 200
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MC-454BC72
72-BIT
-454B
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PD4516821G5
Abstract: C452A
Text: P R ELIM IN A R Y DATA SH EET NEC / MOS INTEGRATED CIRCUII MC-452AB64S 2 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-452AB64S is a 2,097,152 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16M SDRAM : uPD4516821 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line
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MC-452AB64S
64-BIT
MC-452AB64S
uPD4516821
-452A
64S-A
PD4516821G5
C452A
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D4516821
Abstract: D4516821G PD4516821
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-452AA724 2M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AA724 is a 2,097,157 words by 72 bits synchronous dynamic R A M module on which 9 pieces of 16 M S D R A M : uPD4516821 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise
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MC-452AA724
72-BIT
MC-452AA724
uPD4516821
D4516821
D4516821G
PD4516821
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Not Available
Abstract: No abstract text available
Text: -452BA72F-A10 100 MHz 200-pin Dual In-line Memory Module (Socket Type) , uPD4516821G5 MC-452BA72F-A12 83 , line outputs from the PLL CLOCK BUFFER shall be equal length. 4 2. DO - D8 : , uPD4516821 (1 M word
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MC-452BA72
72-BIT
MC-452BA72
iPD4516821
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d4516161
Abstract: MPD4516421
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421, uPD4516821 , uPD4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 (w ord x bit * ban k}, respectively. T h e synchrono us D R AM s achieve , . Burst Termination uPD4516421, uPD4516821 , uPD4516161 T h e re are tw o m eth ods to term in ate a
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uPD4516421
uPD4516821
uPD4516161
16M-bit
PD4516421,
44-pin
50-pin
VP15-107-2
IR35-107-2
d4516161
MPD4516421
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MC452AB645F-A10
Abstract: MC-452AB645-A12
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-452AB645 2M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AB645 is a 2,097,152 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 16M SDRAM : uPD4516821 A are assembled. This module provides high density and large quantities of memory in a small space w ithout utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on
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MC-452AB645
64-BIT
MC-452AB645
uPD4516821
MC-452AB645-A80
MC-452AB645-A10
MC452AB645F-A10
MC-452AB645-A12
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Not Available
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 16M SDRAM : , uPD4516821 A are assembled. This module provides high density and large quantities of memory in a small space without utilizing the , -454AD645F-A12 83 MHz 2 168-pin Dual In-line Memory Module 16 pieces of / ¿PD4516821AG5 (Socket Type
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MC-454AD645
64-BIT
MC-454AD645
uPD4516821
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Not Available
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454BC72 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BC72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : uPD4516821 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on
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MC-454BC72
72-BIT
MC-454BC72
uPD4516821
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Not Available
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : , uPD4516821 A (Revision B) are , pieces of / ¿PD4516821AG5 (Revision B) MHz (MAX.) MC-454AC726F-A80 125 MHz (400 mil TSOP (II , NC No Connection 3 NC E 0) uPD4516821A (1M word x 8 bits x 2
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MC-454AC726
72-BIT
MC-454AC726
uPD4516821
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Not Available
Abstract: No abstract text available
Text: MC-452AB64S-A12L 83 MHz 2 8 pieces of , uPD4516821AG5-A * (400 mil TSOP (II) (400 mil , DATA SHEET_ MOS INTEGRATED CIRCUIT MC-452AB64S 2 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-452AB64S is a 2,097,152 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16M SDRAM: , uPD4516821 A are assembled. This module provides high density and large quantities of memory in a small space without
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MC-452AB64S
64-BIT
MC-452AB64S
uPD4516821
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MC-454AC724
Abstract: MC-454AC724F-A10 MC-454AC724F-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644-A67 PD4516 PD4516821
Text: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-454AC724 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : uPD4516821 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on
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MC-454AC724
72-BIT
MC-454AC724
uPD4516821
L427S25
4E752£
MC-454AC724F-A10
MC-454AC724F-A67
MC-454AD644-A10
MC-454AD644-A12
MC-454AD644-A67
PD4516
PD4516821
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Not Available
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-452AA725 2M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AA725 is a 2,097,152 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 16M SDRAM : , uPD4516821 A are assembled. This module provides high density and large quantities of memory in a small space , of / ¿PD4516821AG5 (400 mil TSOP (II) (Socket Type) MC-452AA725F-A10 100 MHz MC
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MC-452AA725
72-BIT
MC-452AA725
uPD4516821
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Not Available
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : , uPD4516821 A are assembled. This module provides high density and large quantities of memory in a small space without utilizing the , Memory Module 18 pieces of / ¿PD4516821AG5 (Socket Type) (400 mil TSOP (II) Edge connector
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MC-454AC725
72-BIT
MC-454AC725
uPD4516821
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