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    NEC Electronics Group
    UPD45128163G5-A80-9JF
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
    Bristol Electronics UPD45128163G5-A80-9JF 17 - - - - - More Info

    uPD45128163 datasheet (44)

    Part ECAD Model Manufacturer Description Type PDF
    UPD45128163 NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    uPD45128163 NEC Semiconductor Selection Guide Original PDF
    UPD45128163-E Elpida Memory 128M-bit Synchronous DRAM 4-bank LVTTL Original PDF
    UPD45128163G5-A10 NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    uPD45128163G5-A10-9JF Elpida Memory 128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3V Original PDF
    uPD45128163G5-A10-9JF NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    UPD45128163G5-A10-9JF NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    UPD45128163G5-A10B NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    UPD45128163G5-A10B-9JF NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    uPD45128163G5-A10B-9JF NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    uPD45128163G5-A10I-9JF Elpida Memory 128M-bit Synchronous DRAM Original PDF
    UPD45128163G5-A10I-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank LVTTL WTR (Wide Temperature Range) Original PDF
    uPD45128163G5-A10LI-9JF Elpida Memory 128M-bit Synchronous DRAM Original PDF
    UPD45128163G5-A10LI-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank LVTTL WTR (Wide Temperature Range) Original PDF
    uPD45128163G5-A10LT-9JF Elpida Memory 128M-bit (2M x 16-bit x 4-bank), synchronous DRAM LVTTL, 100 MHz Original PDF
    uPD45128163G5-A10T-9JF Elpida Memory 128M-bit (2M x 16-bit x 4-bank), synchronous DRAM LVTTL, 100 MHz Original PDF
    UPD45128163G5-A75 NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    uPD45128163G5-A75-9JF Elpida Memory 128M-bit Synchronous DRAM Original PDF
    UPD45128163G5-A75-9JF NEC 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    UPD45128163G5-A75-9JF-E Elpida Memory 128M-bit Synchronous DRAM 4-bank LVTTL Original PDF

    uPD45128163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags
    2003 - PD45128163

    Abstract: PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF
    Text: Ordering Information Part number µPD45128163G5-A75A-9JF Organization (word × bit × bank) Clock frequency MHz (MAX.) Package 2M × 16 × 4 133 54-pin Plastic TSOP (II) µPD45128163G5-A75-9JF 133 µPD45128163G5-A80-9JF 125 µPD45128163G5-A10-9JF 100 µPD45128163G5-A75L-9JF 133 µPD45128163G5-A80L-9JF 125 2 Data Sheet E0344N10 (Ver. 1.0) µPD45128163 Part Number [ x16 , DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163 128M-bit Synchronous DRAM 4-bank, LVTTL


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    PDF PD45128163 128M-bit PD45128163 728-bit 54-pin M01E0107 PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF
    2003 - SH7709S

    Abstract: HM5225165B-B6 HM5257165B-A6 SH7706 SH7727 SH7729R uPD45128163 HM5264165TT-B60
    Text: ) uPD45128163-A10 (2 Mwords × 16 bits × 4 banks) HM5225165B-B6 (4 Mwords × 16 bits × 4 banks) HM5257165B-A6 (8 Mwords × 16 bits × 4 banks) HM5264165F-B60 (1 Mword × 16 bits × 4 banks) SH7727 uPD45128163-A10 (2 , 2.1.5 uPD45128163 (2 Mwords × 16 bits × 4 banks) . 9 2.1.6 uPD45128163 (2 Mwords × 16 bits × 4 banks) . 11 , ) . 26 2.2.5 uPD45128163 (2 Mwords × 16 bits × 4 banks


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    PDF SH7709S/SH7729R/SH7706/SH7727 32-bit Family/SH7000 HM5257165B-A6) SH7727 SH7709S/SH7729R/SH7706/SH7727) REJ05B0077-0100H SH7709S HM5225165B-B6 HM5257165B-A6 SH7706 SH7727 SH7729R uPD45128163 HM5264165TT-B60
    2001 - Not Available

    Abstract: No abstract text available
    Text: Corporation and Hitachi, Ltd. µPD45128163-SU Ordering Information Part number µPD45128163G5-A75SU-9JF µPD45128163G5-A80SU-9JF 2 Organization (word × bit × bank) Clock frequency MHz (MAX.) 2M × 16 × 4 133 , PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-SU 128M-bit Synchronous DRAM 4 , E0242N10 Package Note TA = -20 to + 70°C µPD45128163-SU Part Number [ x16 , 0.3 V Package G5 : TSOP (II) Preliminary Data Sheet E0242N10 3 µPD45128163-SU Pin


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    PDF PD45128163-SU 128M-bit PD45128163 728-bit 54-pin M01E0107
    2001 - PD45128441

    Abstract: Hitachi T104 E0124N E0123N ELPIDA SDRAM User Manual
    Text: .20 1.3.1 Block diagram of 128M SDRAM ( µPD45128163 , .21 1.4.1 Memory cell array of 128M SDRAM ( µPD45128163 , . 46 5.1.1 Status transition diagram of 128M SDRAM ( µPD45128163 , . 50 6.2 Command Operations of 128M SDRAM ( µPD45128163 , . 73 9.2.4 CKE command truth table (128M SDRAM ( µPD45128163


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    PDF E0123N10 M13132EJ2V0UM00) PD45128441 Hitachi T104 E0124N E0123N ELPIDA SDRAM User Manual
    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: TC59SM716FT/AFT µPD45128163 W982508AH 256Mb 32Mx8 K4S560832A/B HY57V2578020 MT48LC32M8A2TG


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    PDF W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    2001 - E0123N60

    Abstract: E0123N E0124N PD45128163
    Text: .20 1.3.1 Block diagram of 128M SDRAM ( µPD45128163 , .21 1.4.1 Memory cell array of 128M SDRAM ( µPD45128163 , .46 5.1.1 Status transition diagram of 128M SDRAM ( µPD45128163 , .50 6.2 Command Operations of 128M SDRAM ( µPD45128163 , .73 9.2.4 CKE command truth table (128M SDRAM ( µPD45128163


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    PDF E0123N60 3825mA 230mA 15525mA 7540mA 6675mA 230ns E0123N60 E0123N E0124N PD45128163
    MC-458CB647

    Abstract: MC-458CB647EFA-A75 MC-458CB647PFA-A75 PD45128163
    Text: 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM : µPD45128163 are assembled , Clock frequency Package Mounted devices (MAX.) 5 2 4 pieces of µPD45128163G5 (Rev. E) (10.16 mm (400) TSOP (II) Edge connector : Gold plated 4 pieces of µPD45128163G5 (Rev. P) 25.4 , WP. 2. D1, D2, D4, D5 : µPD45128163 (2M words × 16 bits × 4 banks) 4 Data Sheet M14279EJ3V0DS00


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    PDF MC-458CB647 64-BIT MC-458CB647EFA MC-458CB647PFA PD45128163 MC-458CB647 MC-458CB647EFA-A75 MC-458CB647PFA-A75
    2000 - MC-458CB64ESB

    Abstract: MC-458CB64ESB-A10B MC-458CB64PSB MC-458CB64PSB-A10B PD45128163
    Text: bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 , devices MHz (MAX.) 100 MHz 144-pin Small Outline DIMM 4 pieces of µPD45128163G5 (Rev. E , -458CB64PSB-A10B 100 MHz 25.4 mm height 4 pieces of µPD45128163G5 (Rev. P) (10.16mm (400) TSOP (II) 2 , VCC D0 - D3 C VSS D0 - D3 Remark D0 - D3: µPD45128163 (2M words × 16 bits × 4 banks) 4


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    PDF MC-458CB64ESB, 458CB64PSB 64-BIT MC-458CB64ESB MC-458CB64PSB PD45128163 MC-458CB64PSB-A10B MC-458CB64ESB-A10B MC-458CB64PSB-A10B
    2001 - Not Available

    Abstract: No abstract text available
    Text: bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 , devices MHz (MAX.) 100 MHz 144-pin Small Outline DIMM 4 pieces of µPD45128163G5 (Rev. E , -458CB64PSB-A10B 100 MHz 25.4 mm height 4 pieces of µPD45128163G5 (Rev. P) (10.16mm (400) TSOP (II) 2 , : D0 - D3 A0 - A11 VCC D0 - D3 C VSS D0 - D3 Remark D0 - D3: µPD45128163 (2M words


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    PDF MC-458CB64ESB, 458CB64PSB 64-BIT MC-458CB64ESB MC-458CB64PSB PD45128163
    MC-458CA727

    Abstract: MC-458CA727EFA-A75 MC-458CA727PFA-A75 PD45128163
    Text: 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled , : Gold plated 25.4 mm height 2 Data Sheet M14278EJ3V0DS00 5 pieces of µPD45128163G5 (Rev. E) (10.16 mm (400) TSOP (II) 5 pieces of µPD45128163G5 (Rev. P) (10.16 mm (400) TSOP (II) MC , . D1 - D5 : µPD45128163 (2M words × 16 bits × 4 banks) 4 A0 - A11 CLK : D1 - D3 10 pF D3


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    PDF MC-458CA727 72-BIT MC-458CA727EFA MC-458CA727PFA PD45128163 MC-458CA727 MC-458CA727EFA-A75 MC-458CA727PFA-A75
    1998 - a10b

    Abstract: ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80 PD45128163
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64S 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-4516CD64S is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128163 are assembled. This , -4516CD64S-A80 125 MHz 144-pin Small Outline DIMM 8 pieces of µPD45128163G5 MC-4516CD64S-A10 100 MHz , : µPD45128163 (2 M words x 16 bits x 4 banks) 4 D0 - D7 CLK1 10 CLK : D4, D6 CLK : D5, D7 /RAS


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    PDF MC-4516CD64S 64-BIT MC-4516CD64S PD45128163 a10b ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80
    Not Available

    Abstract: No abstract text available
    Text: : µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space , ) 8 pieces of µPD45128163G5 (Rev. P) 26.67 mm height MC-4516CD64PS-A10B 8 pieces of µPD45128163G5 (Rev. E) Edge connector: Gold plated 100 MHz 144-pin Small Outline DIMM (Socket Type , D7: µPD45128163 (2M words x 16 bits x 4 banks) 4 Data Sheet E0065N10 CLK1 10 Ω CLK


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    PDF MC-4516CD64ES, 4516CD64PS 64-BIT MC-4516CD64ES MC-4516CD64PS PD45128163
    Not Available

    Abstract: No abstract text available
    Text: by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are , -458CA726EFB-A10 125 MHz 100 MHz 168-pin Dual In-line Memory Module 5 pieces of µPD45128163G5 (Rev. E , height MC-458CA726PFB-A80 5 pieces of µPD45128163G5 (Rev. P) 125 MHz (10.16 mm (400) TSOP , 47 kΩ SA0 SA1 SA2 2. D1 - D5 : µPD45128163 (2M words × 16 bits × 4 banks) Data Sheet


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    PDF MC-458CA726 72-BIT MC-458CA726EFB MC-458CA726PFB PD45128163
    1999 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-4516CD641ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled. This , of µPD45128163G5 (Rev. E) (400 mil TSOP (II) Package Mounted devices 5 MC , : D0 - D7 A12 : D0 - D7 /CAS /WE Remarks 1. D0 - D7 : µPD45128163 (2M words x 16 bits x 4 banks


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    PDF MC-4516CD641ES 16M-WORD 64-BIT MC-4516CD641ES PD45128163 MC-4516CD641ES-A80 MC-4516CD641ES-A10 125es,
    MC-4516CD64ES

    Abstract: MC-4516CD64ES-A10B MC-4516CD64PS MC-4516CD64PS-A10B PD45128163
    Text: : µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space , devices MHz (MAX.) 2 8 pieces of µPD45128163G5 (Rev. E) (10.16mm (400) TSOP (II) Edge connector: Gold plated 8 pieces of µPD45128163G5 (Rev. P) 26.67 mm height 5 MC , D7 A12 : D0 - D7 Remark D0 - D7: µPD45128163 (2M words x 16 bits x 4 banks) 4 Data Sheet


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    PDF MC-4516CD64ES, 4516CD64PS 64-BIT MC-4516CD64ES MC-4516CD64PS PD45128163 MC-4516CD64PS-A10B MC-4516CD64ES-A10B MC-4516CD64PS-A10B
    2001 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB642XS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-458CB642XS is 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. This module , of µPD45128163G5 (Rev. X) (10.16 mm (400) TSOP (II) Package Mounted devices 2 Data Sheet , D3 A12 : D0 - D3 /CAS CKE0 Remarks 1. D0 - D3: µPD45128163 (2M words x 16 bits x 4 banks) 2. The


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    PDF MC-458CB642XS 64-BIT MC-458CB642XS PD45128163 MC-458CB642XS-A75
    2001 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB642XS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-458CB642XS is 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. This module , pieces of µPD45128163G5 (Rev. X) (Socket Type) MC-458CB642XS-A75 (10.16 mm (400) TSOP (II , - A11 : D0 - D3 BA0 A13 : D0 - D3 BA1 A12 : D0 - D3 Remarks 1. D0 - D3: µPD45128163


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    PDF MC-458CB642XS 64-BIT MC-458CB642XS PD45128163 M01E0107
    Not Available

    Abstract: No abstract text available
    Text: : µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space , -pin Small Outline DIMM 4 pieces of µPD45128163G5 (Rev. E) (Socket Type) MC , 4 pieces of µPD45128163G5 (Rev. P) (10.16mm (400) TSOP (II) L EO uc od Pr t 2 , D3: µPD45128163 (2M words × 16 bits × 4 banks) 4 Data Sheet E0068N10 /CAS : D0 - D3 CKE


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    PDF MC-458CB64ESB, 458CB64PSB 64-BIT MC-458CB64ESB MC-458CB64PSB PD45128163
    2001 - MC-458CB641ES

    Abstract: MC-458CB641ES-A10 MC-458CB641ES-A80 MC-458CB641PS-A10 MC-458CB641PS-A80 MC-458CB641XS-A10 MC-458CB641XS-A80
    Text: pieces of 128M SDRAM: µPD45128163 are assembled. These modules provide high density and large quantities , MHz (MAX.) 125 MHz 144-pin Small Outline DIMM 4 pieces of µPD45128163G5 (Rev. E) MC , connector: Gold plated 4 pieces of µPD45128163G5 (Rev. P) MC-458CB641PS-A10 100 MHz 25.4 mm height (10.16mm (400) TSOP (II) MC-458CB641XS-A80 125 MHz 4 pieces of µPD45128163G5 (Rev. X , A12 : D0 - D3 Remarks 1. D0 - D3: µPD45128163 (2M words x 16 bits x 4 banks) 2. The value of all


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    PDF MC-458CB641ES 458CB641PS 458CB641XS 64-BIT MC-458CB641ES, MC-458CB641PS MC-458CB641XS PD45128163 MC-458CB641ES-A10 MC-458CB641ES-A80 MC-458CB641PS-A10 MC-458CB641PS-A80 MC-458CB641XS-A10 MC-458CB641XS-A80
    2001 - MC-458CB647XFA-A75

    Abstract: MC-458CB647 MC-458CB647EFA-A75 MC-458CB647PFA-A75 PD45128163
    Text: : µPD45128163 are assembled. This module provides high density and large quantities of memory in a small space , frequency Package Mounted devices (MAX.) (10.16 mm (400) TSOP (II) 4 pieces of µPD45128163G5 (Rev. P) 25.4 mm height MC-458CB647PFA-A75 4 pieces of µPD45128163G5 (Rev. E) Edge , -458CB647EFA-A75 (10.16 mm (400) TSOP (II) 4 pieces of µPD45128163G5 (Rev. X) MC-458CB647XFA-A75 (10.16 mm (400 , , D5 : µPD45128163 (2M words × 16 bits × 4 banks) 4 WP Data Sheet E0062N20 MC


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    PDF MC-458CB647 64-BIT MC-458CB647EFA, MC-458CB647PFA MC-458CB647XFA PD45128163 MC-458CB647EFA-A75 MC-458CB647XFA-A75 MC-458CB647 MC-458CB647EFA-A75 MC-458CB647PFA-A75
    2002 - MC-458CA726

    Abstract: MC-458CA726EFB-A10 MC-458CA726EFB-A80 MC-458CA726PFB-A10 MC-458CA726PFB-A80 PD45128163
    Text: by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are , Module 5 pieces of µPD45128163G5 (Rev. E) (Socket Type) MC-458CA726EFB-A80 (10.16 mm (400 , µPD45128163G5 (Rev. P) 125 MHz (10.16 mm (400) TSOP (II) EO MC-458CA726PFB-A10 100 MHz L ct , - D5 C V SS SCL A1 A2 47 k SA0 SA1 SA2 2. D1 - D5 : µPD45128163 (2M words × 16


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    PDF MC-458CA726 72-BIT MC-458CA726EFB MC-458CA726PFB PD45128163 10reactor MC-458CA726 MC-458CA726EFB-A10 MC-458CA726EFB-A80 MC-458CA726PFB-A10 MC-458CA726PFB-A80
    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD642XS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description EO The MC-4516CD642XS is 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled , -pin Small Outline DIMM 8 pieces of µPD45128163G5 (Rev. X) (Socket Type) MC , /CAS A13 : D0 - D7 A12 : D0 - D7 /WE Remarks 1. D0 - D7: µPD45128163 (2M words x 16 bits x 4


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    PDF MC-4516CD642XS 16M-WORD 64-BIT MC-4516CD642XS PD45128163 M01E0107
    2002 - ctm-2s

    Abstract: MC-458CB64ESB MC-458CB64ESB-A10B MC-458CB64PSB MC-458CB64PSB-A10B PD45128163 80A10
    Text: : µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space , pieces of µPD45128163G5 (Rev. E) (Socket Type) MC-458CB64ESB-A10B (10.16mm (400) TSOP (II , µPD45128163G5 (Rev. P) (10.16mm (400) TSOP (II) L EO ct u od Pr 2 Data Sheet E0068N10 Pin , C VSS D0 - D3 Remark D0 - D3: µPD45128163 (2M words × 16 bits × 4 banks) 4 Data Sheet


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    PDF MC-458CB64ESB, 458CB64PSB 64-BIT MC-458CB64ESB MC-458CB64PSB PD45128163 ctm-2s MC-458CB64ESB-A10B MC-458CB64PSB-A10B 80A10
    2001 - Not Available

    Abstract: No abstract text available
    Text: : µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space , .) 2 8 pieces of µPD45128163G5 (Rev. E) (10.16mm (400) TSOP (II) Edge connector: Gold plated 8 pieces of µPD45128163G5 (Rev. P) 26.67 mm height MC-4516CD64PS-A10B 100 MHz 144 , „¦ CLK : D4, D6 CLK : D5, D7 /RAS : D0 - D7 /CAS A12 : D0 - D7 Remark D0 - D7: µPD45128163


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    PDF MC-4516CD64ES, 4516CD64PS 64-BIT MC-4516CD64ES MC-4516CD64PS PD45128163
    2000 - Not Available

    Abstract: No abstract text available
    Text: : µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space , µPD45128163G5 (Rev. E) (10.16mm (400) TSOP (II) Edge connector: Gold plated 8 pieces of µPD45128163G5 , : µPD45128163 (2M words x 16 bits x 4 banks) 4 Data Sheet M13612EJ5V0DS00 D7 MC-4516CD64ES, 4516CD64PS


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    PDF MC-4516CD64ES, 4516CD64PS 64-BIT MC-4516CD64ES MC-4516CD64PS PD45128163 MC-4516CD64PS-A10B
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