The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC6362IDD#TRPBF-ES Linear Technology LTC6362 - Precision, Low Power Rail-to-Rail Input/Output Differential Op Amp/SAR ADC Driver; Package: DFN; Pins: 8; Temperature: I
LTC5541IUH#PBF Linear Technology LTC5541 - 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer; Package: QFN; Pins: 20; Temperature Range: -40°C to 85°C
LTC5508ESC6#TR Linear Technology LTC5508 - 300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; Pins: 6; Temperature Range: -40°C to 85°C
LT5516EUF#PBF Linear Technology LT5516 - 800MHz to 1.5GHz Direct Conversion Quadrature Demodulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT5568EUF#TRPBF Linear Technology LT5568 - 700MHz to 1050MHz High Linearity Direct Quadrature Modulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT5579IUH#TRPBF Linear Technology LT5579 - 1.5GHz to 3.8GHz High Linearity Upconverting Mixer; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C

trw rf Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2N5034 2SC2198 Sanken NPN SD1428 2N5035
Text: ThmsnCSFEFC ThmsnCSFEFC Optek Tech Optek Tech Optek Tech TRW RF Dvc Optek Tech Optek Tech TRW RF Dvc Optek , NthAmerSemi Motorola NthAmerSemi See Index RF Gain CnmsonSemi Diode Trans Space Power See Index Sld St Syst


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PDF DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2N5034 2SC2198 Sanken NPN SD1428 2N5035
1993 - TPV 3100

Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Text: TRW Application Note, TRW RF Semiconductors Catalog No. 97, p. 108AN. 3. TRW Application Notes on , Reports TPV-3100 (110 W, Band III); and the TPV-5050 (50 W, UHF) available from TRW RF Semiconductors , BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today's design , connected in series for RF operation. Balun-transformers provide the key to push-pull design, but they , OUTPUT BALUN (BALANCE-UNBALANCE) Figure 1. RF Application © Motorola, Inc. 1993 Reports 1


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PDF AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
1993 - TPV 3100

Abstract: TPV-3100 tpv3100 trw rf semiconductors transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
Text: . TPV-3100 (110 W, Band III); and the TPV-5050 (50 W, UHF) available from TRW RF Semiconductors. 4 , Amplifier Band III," TRW Application Note, TRW RF Semiconductors Catalog No. 97, p. 84AN. 2. "150 W Linear Amplifier 2 to 28 MHz, 13.5 Volt DC," TRW Application Note, TRW RF Semiconductors Catalog No. 97, p. 108AN , Amplifiers Single RF power transistors seldom satisfy today's design criteria; several devices in separate , the input and output impedances of transistors to be connected in series for RF operation


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PDF AN1034/D AN1034 TPV 3100 TPV-3100 tpv3100 trw rf semiconductors transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
2010 - BD561

Abstract: BD585 BDX24 8D434 PT9788A BD586 BD272 BD163 MJE2480 BD186 motorola
Text: 2N6205 40310 40324 BDY82 SK3041 SK3041 AP15-12 S15-12 BD163 2SD256 BDX24 1571-0420 TRW RF Dvc . 15


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PDF MRF222 MRF223 MRF238 2N6083 SD1272 BD162 2SD810 PT9795 BD561 BD585 BDX24 8D434 PT9788A BD586 BD272 BD163 MJE2480 BD186 motorola
2011 - DTS723

Abstract: SDT710 DTS708 PT8810 IR708 DTS-723 dts710 Pt8811 IR709 2SD898B HITACHI
Text: CrimsonSemi Optek Tech TRW RF Dvc Space Power ThmsnCSFEFC Optek Tech MitsubiElec MitsubiElec SemiconTech See


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PDF 2SC3506 2SC3533 2SC3458 2SC3152 2SC3550 IR801 SDT704 MJH16032 MJH16034 DTS723 SDT710 DTS708 PT8810 IR708 DTS-723 dts710 Pt8811 IR709 2SD898B HITACHI
2011 - 2sC2285

Abstract: Digitron 12 nec sdt411 IR665 DTS423 trw rf transistors 2SC3480 DTS-423
Text: Matsushita ThmsnCSFEFC ThmsnCSFEFC Solid Stlnc Optek Tech Optek Tech Optek Tech TRW RF Dvc Optek Tech


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PDF PTC411P SDT411 SPC411 STI411 STS411 PTC403 PTC403P PTC409 2sC2285 Digitron 12 nec sdt411 IR665 DTS423 trw rf transistors 2SC3480 DTS-423
1993 - 2N5109 motorola reliability

Abstract: 2N5109 motorola trw RF POWER TRANSISTOR trw rf transistor uhf linear amplifier module catv bridge amplifier CATV Wideband Ferrite Transformer Splitter trw rf hybrid amp 2n5109 MOTOROLA reliability report MOTOROLA hybrid amplifiers
Text: Considerations in Using TRW RF Linear Hybrid Amplifiers", TRW Semiconductors, September 1978. D.M. Feeney , APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc. Prepared by: Don Feeney Reprinted with permission from " r.f . design" magazine A new class of low cost, high performance hybrid , Are They? RF linear hybrid amplifiers represent a new family of medium power, broadband gain blocks


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PDF AN1024/D AN1024 2N5109 motorola reliability 2N5109 motorola trw RF POWER TRANSISTOR trw rf transistor uhf linear amplifier module catv bridge amplifier CATV Wideband Ferrite Transformer Splitter trw rf hybrid amp 2n5109 MOTOROLA reliability report MOTOROLA hybrid amplifiers
trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw rf semiconductors 2023-12 trw 131* RF POWER TRANSISTOR mica compression trimmer capacitor TP 9382 trw rf transistors
Text: efficiency transistor. FM v QUALITY AT TRW TRW RF components are renowned for quality and , burn-in life test RF burn-in life test XI Quality Assurance Standart TRW RF components are , TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • â , . 1-380 1-381 1-383 APPLICATIONS NOTES 1 — RF transistor reliability— Reliability and MTF â , . 3 — Reliability considerations in design and use of RF integrated circuits


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trw RF POWER TRANSISTOR

Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
Text: accelerate the test. In addition, TRW has been running accelerated DC lifetest, which correlate with RF , in space, but is also demanded by the commercial marketplace today. RF Micro Devices and TRW have , level. · Small Package Size. As cellular phone sizes shrink, the available real estate for RF , pioneered by RF Micro Devices allows superior heatsinking and electrical grounding. This allows over 4W of , traditionally been either expensive, large, power-hungry, or any combination of these has been the RF power


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PDF TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
2000 - RF Micro Devices

Abstract: No abstract text available
Text: market, RF Micro Devices and TRW have been able to significantly reduce or eliminate the above mentioned disadvantages. TRW , through their use of Molecular Beam Epitaxy and their vast working knowledge , . Additionally, RF Micro Devices has performed numerous life tests on several different types of components , addition, TRW has performed a space qualification on an HBT MMIC; therefore, the HBT process is now space , (typically consumer products), a good match does not exist. RF Micro Devices has taken the lead in reducing


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PDF TA0001 50GHz RF Micro Devices
c4231

Abstract: c4231 transistor 4231X1B 4231 trw rf transistor trw RF POWER TRANSISTOR TRW POWER THC4231X1B i-089 a988
Text: Block Diagram IBottom Viewl -'cc 12 Lead Metal Can - X1 Package (TO-8/MO-12 Style) TRW LSI Products Inc. Phone: (6191 457-1000 © TRW Inc. 1988 PO Box 2472 Telex: 697-957 40G05913 Rev. A-9/88 La Jolla , -12 Style) TRW LSI Products Inc. This Material Copyrighted By Its Respective Manufacturer THC4231 ËSHww , at the non-inverting input, pin 6. TRW LSI Products Inc. 3 Input and Common Mode Voltage Limits , °c DC Electrical characteristics within specified operating conditions (RL = 100 Ohms, Rf = 250 Ohms


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PDF THC4231 165MHz THC4231 90X00181 I089I 40G05913 c4231 c4231 transistor 4231X1B 4231 trw rf transistor trw RF POWER TRANSISTOR TRW POWER THC4231X1B i-089 a988
2000 - trw rf transistor

Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
Text: . RF Micro Devices and TRW have both been diligently testing the HBT process and products to determine , GaAs HBT, RF Micro Devices has licensed the proprietary TRW HBT process for commercial wireless , level. · Small Package Size. As cellular phone sizes shrink, the available real estate for RF , pioneered by RF Micro Devices allows superior heatsinking and electrical grounding. This allows over 4W of , traditionally been either expensive, large, power-hungry, or any combination of these has been the RF power


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PDF TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
1999 - AN5337 ca3028

Abstract: ca3028a AN5337 trw rf transistor CA3028B ca3028 trw RF POWER TRANSISTOR AN5337 equivalent JB22 RF amplifiers in the HF and VHF
Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges , the CA3028A and CA3028B in the following applications: · RF Amplifier · Autodyne Converterw · IF , low-resistance path. An RF choke or low-valued resistor may be used in place of transformer coupling, but , 2R +VCC 2 RF IN +VCC 2 IN 3 +VCC 3 4 4 CF FIGURE 2C. +VCC R FIGURE 2D. +VCC 2R +VCC 8 R 2R 8 1 +VCC RF IN 5 5 CA3028A IF OUT


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PDF CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent JB22 RF amplifiers in the HF and VHF
c4231

Abstract: c4231 transistor trw RF POWER TRANSISTOR THC4231 trw rf transistor THC4231X1B THC4231X1V
Text: Gain Circuit Rf AV = 1 CAPACITANCE IN uF OvOUT CAPACITANCE IN flf ■O »OUT 20 TRW LSI Products , ) 11 TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (619) 457-1000 FAX: (619| 455-6314 © TRW Inc. 1990 40G05913 Rev. B — 11/90 Printed in the U.S.A. THC4231 7#?SrV Functional , (Bottom View) 'cc 12 Lead Metal Can (T0-8/M0-12 Style) - X1 Package 12 TRW LSI Products Inc. THC4231 , calculated level of VQyj-Vpiy is defined as the voltage at the non-inverting input, pin 6. 13 TRW LSI


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PDF THC4231 165MHz THC4231 anD-883 T0-8/M0-12) THC4231X1V c4231 c4231 transistor trw RF POWER TRANSISTOR trw rf transistor THC4231X1B THC4231X1V
1B11ED

Abstract: OP501 97S120
Text: OPTEK TECHNOLOGY INC DbE D | L^flSaO ODQOmfl 1 | Optoelectronics Division TRW Electronic , ± 15 rm 0 0.2 0.4 0.6 0.8 1.0 OISTANCE BETWEEN LENS TIPS - Mei Optoelectronics Division, TRW , III ✓CKT 2 - Rf - 10K 1 10 IOO 1,000 10.000 FREQUENCY - KHz Switching Time Test Circuit CIRCUIT , «. If a adjujtad for VOOT - < TRW reserves the right to make changes at any time in order to improve design and to supply the bast product possible._ Optoelectronics Division, TRW Electronic Components


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PDF 0P501SLD, QP501SLB, OP501 0P501SLD QP500 1B11ED 97S120
RF2131

Abstract: TA0013 trw rf transistor HBT transistor
Text: in space, but is also demanded by the commercial marketplace today. RF Micro Devices and TRW have , · RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on , . · Small Package Size. As cellular phone sizes shrink, the available real estate for RF , has been the RF power amplifier. This critical component governs much of the battery life, size , ) technology from RF Micro Devices. The RF2131 AMPS/ETACS Power Amplifier can amplify a +6dBm input signal to


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PDF TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor
TDC1012 TRW

Abstract: 1012N7 TDC1012 TDC4611 1012N7C TDC1012C3VX 1012N7C-X 1012j7 CRYSTAL trw TRW CA amplifier
Text: -883 Applications • Direct Digital RF Signal Generation • Test Signal Generation • Arbitrary Waveform Synthesis • Broadcast And Studio Video • High-Resolution A/D Converters Interface Circuit TRW LSI Products Inc. P.O. Box 2472 La Jolla. CA 92038 Phone: (619)457-1000 FAX: (619) 455-6314 © TRW Inc. 1990 , Ceramic DIP-J7 Package 24 Pin Plastic DIP-N7 Package 24 TRW LSI Products Inc. TDC1012 Functional , System performance characteristics table. 25 TRW LSI Products Inc. TDC1012 The second more rigid


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PDF TDC1012 12-Bit, 20Msps 12-bit TDC1012. 25Absolute TDC1012 TRW 1012N7 TDC4611 1012N7C TDC1012C3VX 1012N7C-X 1012j7 CRYSTAL trw TRW CA amplifier
2000 - trw rf transistor

Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR
Text: phone sizes shrink, the available real estate for RF components shrinks as well. Traditional power , , power-hungry, or any combination of these has been the RF power amplifier. This critical component governs , Bipolar Transistor) technology from RF Micro Devices. The RF2131 AMPS/ETACS Power Amplifier can amplify , expensive as a result. A MOSFET switch will cost 13-67 13 TECHNICAL NOTES AND ARTICLES RF Micro , typically required by GaAs MESFETs. The RF2131 is one of a family of power amplifiers from RF


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PDF TA0013 RF2131: RF2131 Bm/30kHz, trw rf transistor TA0013 trw RF POWER TRANSISTOR
TRW2001

Abstract: TRW2003 TRW2020 trw 2015 TRW201 trw 2001 TRW2010 trw rf transistors TRW MICROWAVE TRW2005
Text: SEMICONDUCTOR TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for , Unit °C/W MOTOROLA RF DEVICE DATA 2-1344 MOTORCLA SC XSTRS/R TRW2000 Series F 1EE D £ , ) MOTOROLA RF DEVICE DATA 2-1345 MOTORCLA SC XSTRS/R TRW2000 Series F 12E D | b3 b7254 , TRW2020 - - - - - - - - MOTOROLA RF DEVICE DATA 2-1346 Tfc, EFFICIENCY {%) 30 S PO , , SATURATED OUTPUT POWER (WATTS) RF DEVICE DATA Tfc, EFFICIENCY (%) H 37 ë IO Psat. SATURATED


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PDF Bt75Sl TRW2000 171eC TRW2003 TRW2005 TRW2010 TRW2001 TRW2020 trw 2015 TRW201 trw 2001 trw rf transistors TRW MICROWAVE
Not Available

Abstract: No abstract text available
Text: Architecture · · 165MHz Closed-Loop -3dB Bandwidth 15ns Settling To 0.05% TRW LSI Products Inc. PO. B ox 2 4 , : (619) 4 5 7 - 1 0 0 0 FAX: (6191 4 5 5 - 6 3 1 4 © TRW Inc. 1 9 9 0 11 4 0 G 0 5 9 1 3 Rev. B - 1 1 , ±10V. For intermediate 12 Lead Metal Can (TO-8/MO-12 Style! - X1 Package 12 TRW LSI Products Inc , lated level of V g g j- V Q [ ^ is defined as the voltage at the non inverting input, pm 6. TRW LSI , operating conditions (R|_= 100 Ohms, Rf = 250 Ohms, V q q = ± 15V, A y = +2| Tem perature Range Industrial


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PDF THC4231 THC4231 95ecification
trw RF POWER TRANSISTOR

Abstract: C33825 trw rf transistor trw 131* RF POWER TRANSISTOR HBT transistor TRW mmic POUT315 RF2152 TA0032 3.5V HBT MMIC Amplifier
Text: The RF2152 is the latest addition to a family of power amplifiers introduced by RF Micro Devices , line can be approximated by the equation: Copyright 1997-2000 RF Micro Devices, Inc. 13-165 , . !" " # TECHNICAL NOTES AND ARTICLES 13 The RF2152 utilizes the TRW /RFMD high volume low cost commercial HBT process. This is a mature process developed by TRW in the late 1980's. Since the early 1990's, TRW and RFMD have worked together to optimize this process for low cost commercial


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PDF TA0032 RF2152: RF2152 trw RF POWER TRANSISTOR C33825 trw rf transistor trw 131* RF POWER TRANSISTOR HBT transistor TRW mmic POUT315 TA0032 3.5V HBT MMIC Amplifier
TDC1027

Abstract: 1047B7V TDC1047 1047B7C LM313 TDC1047B7C TDC1047B7V TRW TDC1027
Text: TDC1047 Monolithic Video A/D Converter 7-Bit, 20Msps The TRW TDC1047 is a 20Msps (MegaSample , two's complement coding. The TDC1047 is pin and function compatible with TRW 's TDC1027, and offers , 121 TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (613) 457-1000 FAX: 16191 455-6314 © TRW Inc. 1990 40G01393 Rev. E-11/90 Printed in the U.S.A. TDC1047 mmmm^mmm iiui Pin , positive or negative direction. 122 TRW LSI Prodiucts Inc. 122 TDC1047 TVlîV Outputs The outputs of


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PDF TDC1047 20Msps TDC1047 TDC1027, MIL-STD-883 1047B7V TDC1027 1047B7V 1047B7C LM313 TDC1047B7C TDC1047B7V TRW TDC1027
1112n7c

Abstract: FERRITE corel TDC1112-3 TDC1112 1112R3C-X TRW tdc
Text: MIL-STD-883C Applications • Direct Digital RF Signal Generation • Test Signal Generation • Arbitrary Waveform Synthesis • Broadcast And Studio Video • High-Resolution A/D Converters 87 TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (619) 457-1000 FAX: (619) 455-6314 © TRW , Carrier - R3 Package 88 TRW LSI Products Inc. TDC1112 TUSn! Functional Description General , approximately equal so that the effect of amplifier input bias current is minimized. 89 TRW LSI Products Inc


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PDF TDC1112 12-Bit, 50Msps TDC1112 12-bit 1112n7c FERRITE corel TDC1112-3 1112R3C-X TRW tdc
C4169

Abstract: 21521A DNC-11 Z3C marking TIDC4169 THC4169 TDC4169Y8F3 TDC4169Y8F2 TDC4169 TRW capacitor
Text: Package OUT 21514A TOP VIEW 3 Pin Plastic - Z3 Package TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (619) 457-1000 FAX: (619)455-6314 © TRW Inc. 1990 40G06719 Rev. A-8/90 Printed in , .800V 4 TRW LSI Products Inc. TIDC4169 Operating conditions Parameter Min Nom Max Unit V+ Power , /W NH Package 160 °C/W MH Package 180 °C/W Z3 Package 160 °C/W 5 TRW LSI , 6 TRW LSI Products Inc. TDC4169 Ytürnw Notes on specification tables 1. Guaranteed


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PDF TDC4169 TDC4169 operate70Â 4169Z3C C4169 21521A DNC-11 Z3C marking TIDC4169 THC4169 TDC4169Y8F3 TDC4169Y8F2 TRW capacitor
2000 - transistor 835

Abstract: HBT transistor TRW mmic RF2152 TA0032 trw rf transistor
Text: introduced by RF Micro Devices (RFMD) utilizing GaAs HBT technology. This commercially proven technology has , 13 The RF2152 utilizes the TRW /RFMD high volume low cost commercial HBT process. This is a mature process developed by TRW in the late 1980's. Since the early 1990's, TRW and RFMD have worked together to , reactors at TRW . This results in better uniformity and reduced process variation when compared with older , , North Carolina. With the implementation of cross-linked manufacturing, RFMD and TRW will now provide


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PDF TA0032 RF2152: PSSOP-16 RF2152 28dBm 27dBm 10dBm transistor 835 HBT transistor TRW mmic TA0032 trw rf transistor
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