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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

trw rf transistors Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw rf semiconductors 2023-12 trw 131* RF POWER TRANSISTOR mica compression trimmer capacitor TP 9382 trw rf transistors
Text: provides complete information on all the TRW high-frequency transistors , modules and integrated circuits , . Products • Transistors in plastic and ceramic packages with RF output voltages up to 122 dBuV (D IN 4 , efficiency transistor. FM v QUALITY AT TRW TRW RF components are renowned for quality and , burn-in life test RF burn-in life test XI Quality Assurance Standart TRW RF components are , 978 7 PT 9783 100W PEAK A 4 TRW SEM ICONDUCTORS SSB Power Transistors This Series


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1993 - TPV 3100

Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Text: BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today's design , TRW Application Note, TRW RF Semiconductors Catalog No. 97, p. 108AN. 3. TRW Application Notes on , Reports TPV-3100 (110 W, Band III); and the TPV-5050 (50 W, UHF) available from TRW RF Semiconductors , transistors ), must be coupled to obtain the required amplifier output power. Since highpower transistors , choose the push-pull technique because it allows the input and output impedances of transistors to be


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PDF AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
TRW2001

Abstract: TRW2003 TRW2020 trw 2015 TRW201 trw 2001 TRW2010 trw rf transistors TRW MICROWAVE TRW2005
Text: SEMICONDUCTOR TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for , Ballast Resistors 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS MAXIMUM RATINGS , Unit °C/W MOTOROLA RF DEVICE DATA 2-1344 MOTORCLA SC XSTRS/R TRW2000 Series F 1EE D £ , ) MOTOROLA RF DEVICE DATA 2-1345 MOTORCLA SC XSTRS/R TRW2000 Series F 12E D | b3 b7254 , TRW2020 - - - - - - - - MOTOROLA RF DEVICE DATA 2-1346 Tfc, EFFICIENCY {%) 30 S PO


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PDF Bt75Sl TRW2000 171eC TRW2003 TRW2005 TRW2010 TRW2001 TRW2020 trw 2015 TRW201 trw 2001 trw rf transistors TRW MICROWAVE
1999 - AN5337 ca3028

Abstract: ca3028a AN5337 trw rf transistor CA3028B ca3028 trw RF POWER TRANSISTOR AN5337 equivalent JB22 RF amplifiers in the HF and VHF
Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges , the CA3028A and CA3028B in the following applications: · RF Amplifier · Autodyne Converterw · IF , low-resistance path. An RF choke or low-valued resistor may be used in place of transformer coupling, but , amplifier composed of transistors Q1 and Q2 driven from a constant-current source Q3. A single-ended input , 2R +VCC 2 RF IN +VCC 2 IN 3 +VCC 3 4 4 CF FIGURE 2C. +VCC R


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PDF CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent JB22 RF amplifiers in the HF and VHF
trw RF POWER TRANSISTOR

Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
Text: accelerate the test. In addition, TRW has been running accelerated DC lifetest, which correlate with RF , in space, but is also demanded by the commercial marketplace today. RF Micro Devices and TRW have , level. · Small Package Size. As cellular phone sizes shrink, the available real estate for RF , pioneered by RF Micro Devices allows superior heatsinking and electrical grounding. This allows over 4W of , traditionally been either expensive, large, power-hungry, or any combination of these has been the RF power


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PDF TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
QUALCOMM MSM

Abstract: TA0003 10MHz 10dBm oscillator gilbert
Text: transistors on and off with minimal distortion. Copyright 1997-2000 RF Micro Devices, Inc. TA0003 , and dual-mode (analog/CDMA) handset designs, the engineers at RF Micro Devices (Greensboro, NC), in cooperation with CDMA-developer Qualcomm, Inc. (San Diego, CA) and device foundry TRW (Redondo Beach, CA), have created an RF chip set with the performance levels required by CDMA system designers. The chip set is based on the low-power GaAs heterojunction-bipolar-transistor (HBT) device technology from TRW


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PDF TA0003 RF9907 -45dB 10MHz 175MHz. QUALCOMM MSM TA0003 10MHz 10dBm oscillator gilbert
1993 - TPV 3100

Abstract: TPV-3100 tpv3100 trw rf semiconductors transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
Text: Amplifiers Single RF power transistors seldom satisfy today's design criteria; several devices in separate , the input and output impedances of transistors to be connected in series for RF operation , . TPV-3100 (110 W, Band III); and the TPV-5050 (50 W, UHF) available from TRW RF Semiconductors. 4 , Amplifier Band III," TRW Application Note, TRW RF Semiconductors Catalog No. 97, p. 84AN. 2. "150 W Linear Amplifier 2 to 28 MHz, 13.5 Volt DC," TRW Application Note, TRW RF Semiconductors Catalog No. 97, p. 108AN


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PDF AN1034/D AN1034 TPV 3100 TPV-3100 tpv3100 trw rf semiconductors transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
2000 - TA0003

Abstract: interleaver QUALCOMM MSM 2
Text: and dual-mode (analog/CDMA) handset designs, the engineers at RF Micro Devices (Greensboro, NC), in cooperation with CDMA-developer Qualcomm, Inc.(San Diego, CA) and device foundry TRW (Redondo Beach, CA), have created an RF chip set with the performance levels required by CDMA system designers. The chip set is based on the low-power GaAs heterojunction-bipolar-transistor (HBT) device technology from TRW . The CDMA chips perform all the RF frontend functions in a handset (Fig. 1), including frequency


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PDF TA0003 RF9908 TA0003 interleaver QUALCOMM MSM 2
2000 - trw rf transistor

Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
Text: . RF Micro Devices and TRW have both been diligently testing the HBT process and products to determine , GaAs HBT, RF Micro Devices has licensed the proprietary TRW HBT process for commercial wireless , circuit to temperature compensate the RF transistors , thus limiting the current through the bias network , level. · Small Package Size. As cellular phone sizes shrink, the available real estate for RF , pioneered by RF Micro Devices allows superior heatsinking and electrical grounding. This allows over 4W of


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PDF TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
1993 - 2N5109 motorola reliability

Abstract: 2N5109 motorola trw RF POWER TRANSISTOR trw rf transistor uhf linear amplifier module catv bridge amplifier CATV Wideband Ferrite Transformer Splitter trw rf hybrid amp 2n5109 MOTOROLA reliability report MOTOROLA hybrid amplifiers
Text: Considerations in Using TRW RF Linear Hybrid Amplifiers", TRW Semiconductors, September 1978. D.M. Feeney , APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc. Prepared by: Don Feeney Reprinted with permission from " r.f . design" magazine A new class of low cost, high performance hybrid , Are They? RF linear hybrid amplifiers represent a new family of medium power, broadband gain blocks


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PDF AN1024/D AN1024 2N5109 motorola reliability 2N5109 motorola trw RF POWER TRANSISTOR trw rf transistor uhf linear amplifier module catv bridge amplifier CATV Wideband Ferrite Transformer Splitter trw rf hybrid amp 2n5109 MOTOROLA reliability report MOTOROLA hybrid amplifiers
2000 - RF9938

Abstract: transistor for RF amplifier and mixer trw rf transistor
Text: industry, RF Micro Devices (RFMD) developed CDMA chip sets for both receiver and transmit chain. The , (HBT) process from TRW . The HBT process offers several advantages over other processes such as high Ft, low noise transistors , and process consistency. The CDMA program is two-fold: The first chip set , an IF amplifier at the bottom and the LO switching transistors at the top. Double balanced mixers , NOTES AND ARTICLES LOA LOB IFA IFB RF MICRO DEVICES, INC. GREENSBORO, NC Title PCS


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PDF TA0022 RF9938: -10dBm RF9908 -37dB 880KHz -58dB 98MHz RF9938 transistor for RF amplifier and mixer trw rf transistor
RF2131

Abstract: TA0013 trw rf transistor HBT transistor
Text: in space, but is also demanded by the commercial marketplace today. RF Micro Devices and TRW have , temperature compensate the RF transistors , thus limiting the current through the bias network and protecting , · RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on , . · Small Package Size. As cellular phone sizes shrink, the available real estate for RF , has been the RF power amplifier. This critical component governs much of the battery life, size


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PDF TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor
2000 - trw rf transistor

Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR
Text: temperature compensate the RF transistors , thus limiting the current through the bias network and protecting , phone sizes shrink, the available real estate for RF components shrinks as well. Traditional power , , power-hungry, or any combination of these has been the RF power amplifier. This critical component governs , Bipolar Transistor) technology from RF Micro Devices. The RF2131 AMPS/ETACS Power Amplifier can amplify , expensive as a result. A MOSFET switch will cost 13-67 13 TECHNICAL NOTES AND ARTICLES RF Micro


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PDF TA0013 RF2131: RF2131 Bm/30kHz, trw rf transistor TA0013 trw RF POWER TRANSISTOR
TDC1027

Abstract: 1047B7V TDC1047 1047B7C LM313 TDC1047B7C TDC1047B7V TRW TDC1027
Text: TDC1047 Monolithic Video A/D Converter 7-Bit, 20Msps The TRW TDC1047 is a 20Msps (MegaSample , two's complement coding. The TDC1047 is pin and function compatible with TRW 's TDC1027, and offers , 121 TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (613) 457-1000 FAX: 16191 455-6314 © TRW Inc. 1990 40G01393 Rev. E-11/90 Printed in the U.S.A. TDC1047 mmmm^mmm iiui Pin , comparators which cause the input impedance to vary with the signal level, as comparator input transistors are


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PDF TDC1047 20Msps TDC1047 TDC1027, MIL-STD-883 1047B7V TDC1027 1047B7V 1047B7C LM313 TDC1047B7C TDC1047B7V TRW TDC1027
trw RF POWER TRANSISTOR

Abstract: BLT80 bfg540 s-parameter trw rf transistor BLT81 trw rf semiconductors BFG540 BC807 npn power amplifier circuit BC817
Text: BFG540/x and the RF power transistors BLT80 and BLT81. The amplifier, a demonstration board showing the , , impedance information is needed about the RF transistors for designing the matching circuits. The amplifier , consists of the three RF transistors (BFG540/x, BLT80 and BLT81), matching circuitry (striplines , for 900 MHz at 6V In this note some results of measurements are described performed on a RF amplifier for 900 MHz applications. The amplifier is able to deliver 1.2 W RF output power with an efficiency


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PDF BFG540/x BLT80 BLT81. BFG540, BLT81 900MHz. BLT81 trw RF POWER TRANSISTOR bfg540 s-parameter trw rf transistor trw rf semiconductors BFG540 BC807 npn power amplifier circuit BC817
TPV364

Abstract: CA2600 trw transistors linear amplifier 470-860 trw hybrid CA2100 TPV-376 CA2200 CA2301 trw resistors
Text: devices are new products using gold die with improved third order characteristics. TRW Type Freq. Resp. Â , TRANSISTORS These NPN transistors feature gold metalization and diffused emitter ballast resistors. Excellent , for 20V operation. Output 3 Tone TRW Frequency Power IMD Gain Type (MHz) (W) (dB) (dB) Package , TRANSISTORS These NPN transistors feature gold metalization and diffused emitter ballast resistors. Excellent linearity makes them the ideal choice for Band 4-5 applications. .280 SOE .380 SOE Output 3 Tone TRW


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PDF CA2100, CA2200, CA2300, CA2301 CA2600 50MHz 46dBmV 50dBmV 50d8mV CA2100 TPV364 trw transistors linear amplifier 470-860 trw hybrid TPV-376 CA2200 trw resistors
MRA0610

Abstract: MRA0610-40A MRA0610-18A MRA0610-3 MRA0610-9 trw rf semiconductors
Text: mr ao 610-3, mra0610-9, mra0610-18a, m rao 610-40 a MICroAMP® P-Band Class C Power Transistors • 3 to 40 Watts • Broadband 600-1000 MHz • Internally Compensated* • Gold Metalized â , 0jF Thermal Resistance Junction to Flange (at rated RF output) 15 -C/W 6 °C.-W 4 °C/W 2.5 "C.W Po , patented by TRW , 'inc. (US 3,713,006). MRA0610-3 — 3 WATTS BROADBAND Typical Power Output vs , Circuit Details available from TRW Semiconductors. 600 700 S00 900 Frequency — MHz 1000 Typical


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PDF mra0610-9, mra0610-18a, MRA0610-3 MRA0610-9 10-18A MRA0610-40A mra0610-3, mra061018a, mra061040a MRA0610 MRA0610-40A MRA0610-18A trw rf semiconductors
1996 - TDC1007J

Abstract: tdc1007 IC STU 404 1007J TRW tdc stu 407 trw 1007 siemens rs 1007 clifford relay TDC-1007J
Text: feature of this process is that it provides both PNP and NPN high frequency transistors which make wide , and transistors . But upon closer examination, particular areas of operation should become evident , portion of the schematic along with transistors Q5, Q6. This circuitry ensures the designed performance , and a bias network buffer circuit. The transistors Q7 , Q8 , Q9 and Q10 are for slew enhancement. If , base drive to Q1 . Similarly, Q9 will supply extra base drive to Q2 . Transistors Q11 , Q12 , Q13


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PDF AN548 HA-5033 1-800-4-HARRIS TDC1007J tdc1007 IC STU 404 1007J TRW tdc stu 407 trw 1007 siemens rs 1007 clifford relay TDC-1007J
1999 - TDC1007J

Abstract: TDC1007 IC STU 404 149A d 2539 transistor trw 1007 TDC-1007J Hughes HA-5033 trw RF POWER TRANSISTOR
Text: both PNP and NPN high frequency transistors which make wide bandwidth designs, such as the HA , a collection of resistors and transistors . But upon closer examination, particular areas of , primarily of the diode-biasing located on the left portion of the schematic along with transistors Q5, Q6 , optimization circuits are a slew enhancement circuit and a bias network buffer circuit. The transistors Q7 , output transistors approaching a condition of being simultaneously on. This condition has been computer


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PDF HA-5033 AN548 TDC1007J TDC1007 IC STU 404 149A d 2539 transistor trw 1007 TDC-1007J Hughes trw RF POWER TRANSISTOR
TDC1014

Abstract: Tdc1016 trw TDC1046 TIDC1014 1016B7C TDC1016 1016B7 trw resistor yuma TRW LSI Products
Text: TIDC1014 Use TDC1046 for New Designs Monolithic Video A/D Converter 6-Bit, 25MSPS The TRW , outputs in binary or offset two's complement coding. Nate: TRW recommends the use of the TDC1046 for new , ENCODER LATCH O °1-6 17 TRW LSI Products Inc. P.O. Box 2472 La Mia, CA 92038 Phone: 16191 457-1000 Telex: 697-957 TWX: SJ0 -336-J571 © TRW Inc. 1988 40G00278 Rev. G-4/88 Primed m the U.S.A , 41 TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (613) 457-1000 FAX: |619


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PDF TIDC1014 TDC1046 25MSPS TDC1014 12MHz Tdc1016 trw TIDC1014 1016B7C TDC1016 1016B7 trw resistor yuma TRW LSI Products
TDC1016

Abstract: 1016B7 capacitor, 22 microfarad 50v Tdc1016 trw yuma HA2539 1N4001 ECL2516 R20 marking TRW LSI Products
Text: 41 TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (613) 457-1000 FAX: |619| 455-6314 © TRW Inc. 1990 40G00280 Rev. G-11/9C Printed in the U.S.A. TDC1016 TRìTw Pin Assignments NC , stability of the applied reference voltage. 42 TRW LSI Products Inc. TDC1016 TRìTw Reference (cont , NFH Not Force HIGH TTL/ECL 20 13 NFL Not Force LOW TTL/ECL 21 14 43 TRW LSI Products Inc , requires outside trim 44 TRW LSI Products Inc. TDC1016 7i?rV Figure 3. Digital Input Equivalent


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PDF TDC1016 10-Bit, 20Msps TDC1016 10-bit 1016B7 capacitor, 22 microfarad 50v Tdc1016 trw yuma HA2539 1N4001 ECL2516 R20 marking TRW LSI Products
2000 - w54 transistor

Abstract: TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor
Text: qualified for Class S space applications. RF Micro Devices and TRW have both thoroughly tested the HBT , is connected to the battery voltage and is used to supply base current to the RF transistors . The , RF Micro Devices introduces a new power amplifier with digital gain control for low voltage , offered by RF Micro Devices. This integrated PA is also well suited for lower frequency applications , of power amplifiers from RF Micro Devices based upon HBT technology for both linear and


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PDF TA0014 RF2155: 900MHz 400MHz w54 transistor TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor
2000 - RF2108

Abstract: cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011
Text: RF transistors , thus limiting the current through the bias network and protecting the devices from , TA0011 TA0011 RF2108: A Linear, High Efficiency, HBT, CDMA Power Amplifier RF , very small footprint for the RF output interface. Using HBT semiconductor technology from RF Micro , for the RF components. Most existing CDMA linear power amplifiers use hybrid modules, which are , /30kHz in the receive band. The RF2108 is one of a family of power amplifiers from RF Micro


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PDF TA0011 RF2108: 29dBm 16-lead RF2108 27dBm cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011
2000 - vhf antenna mtbf

Abstract: RF2115 w54* transistor RF2155 TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR
Text: . RF Micro Devices and TRW have both thoroughly tested the HBT process and products to determine the , the battery voltage and is used to supply base current to the RF transistors . The output stage , RF Micro Devices introduces a new power amplifier with digital gain control for low voltage , offered by RF Micro Devices. This integrated PA is also well suited for lower frequency applications , of power amplifiers from RF Micro Devices based upon HBT technology for both linear and


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PDF TA0014 RF2155: 900MHz 400MHz RF2155 vhf antenna mtbf RF2115 w54* transistor TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR
2010 - BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2N5034 2SC2198 Sanken NPN SD1428 2N5035
Text: ThmsnCSFEFC ThmsnCSFEFC Optek Tech Optek Tech Optek Tech TRW RF Dvc Optek Tech Optek Tech TRW RF Dvc Optek , POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V (BR)CEO PD Max hFE fT (Hz) 'CBO Max Max (8) (A) on 10k 10k 10k 10k 10k 10k 1 5k 1 5k 1 5k 1 5k ON) Mln (A) (CE)«at Max (Ohms) r T Oper Max (°C) Package Style Devices , NthAmerSemi Motorola NthAmerSemi See Index RF Gain CnmsonSemi Diode Trans Space Power See Index Sld St Syst


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PDF DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2N5034 2SC2198 Sanken NPN SD1428 2N5035
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