The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1058S Linear Technology IC QUAD OP-AMP, 2500 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1058IS#PBF Linear Technology IC QUAD OP-AMP, 2500 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT685CJ Linear Technology IC COMPARATOR, 2500 uV OFFSET-MAX, 5.5 ns RESPONSE TIME, CDIP16, 0.300 INCH, HERMETIC SEALED, CERDIP-16, Comparator
LT1058IS Linear Technology IC QUAD OP-AMP, 2500 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1057ISW#TR Linear Technology IC DUAL OP-AMP, 2500 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO16, 0.300 INCH, PLASTIC, SOP-16, Operational Amplifier
LT1057ISW#TRPBF Linear Technology IC DUAL OP-AMP, 2500 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO16, 0.300 INCH, LEAD FREE, PLASTIC, SOP-16, Operational Amplifier

transistors 2sd 2500 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2sd1764

Abstract: 2SD1856 transistors 2sd 2500
Text: Transistors 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 ·F e a tu re s 1 ) Built-in zener diode between coHector and base. 2 ) Strong protection against reverse surges due to low loads. 3 , ) W *3 W (T c « 2 5 *C ) r ·c 2SD 2212 / 2SD 2143 / 2SD 1866 / 2SD 1764 Ti Tätg * 1 Sigle , 1k~10k T100 1000 2SD2143 CPT3 1k-10k TL 2500 2SD1868 ATV 1k~10k TV2 2500 2801764 TO-220FP 1k~10k - , Basic ordering unit (pieces) 2SD 1856 TO -220PP 2 k-30k - 500 ·Electricalcharacteristics (Ta=25,C


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PDF 2SD2212 2SD2143 2SD1866 2SD1764 2SD1856 -220PP 2SD1856 transistors 2sd 2500
transistor 2SB 1567

Abstract: 2sd 316
Text: 2S B 1 5 8 0 / 2 S B 1 316 / 2 S B 1 5 6 7 / 2 S B 1 287 Transistors 2 S D 2 1 95 / 2S D 1 9 , . C om plem ents the 2SD 2195/2S D 1980/ 2SD 2398/ 2SD 1765. Parameter Collector-base voltaqe , 2500 — — 500 500 * Denotes F ife Min. Typ. Max. -1 0 0 -1 0 0 â , , 2A) 2SD 2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 I •F e a tu re s 1) 2) 3) 4 , €” — — DP* — — T100 TL TV2 1000 2500 2500 500 500 — — 1000 Max. 25


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PDF 2SB1580 2SB1316 2SB1567 2SB1287 2195/2S 1980/2SD 2398/2SD 2SB1580 0Dlb713 O-220FN transistor 2SB 1567 2sd 316
TRANSISTOR D 1765

Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Text: Transistors 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 , between base and em itter. Butit-in dam per diode. C om plem ents the 2S D 219 5/2S D 1380/ 2SD 2398/ 2SD , dissipation 2SB1316 2SD 1567.2SD1287 TJ Tstg Pc Svmbol V cbo Vceo V ebo Ic lim its - 100 - to o ~8 -2 -3 2 , 0 A , f" 1MHz 2SB1580 MPT3 1k- 10k BN * T100 1000 2SB1316 CPT3 1k- 10k - TL 2500 2SB1567 , Emitter-base v o lta g e Collector current Symbol V cbo Vaso ' V eho 2SD 2195 / 2SD1980 / 2SD1867 / 2SD2398


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PDF 2SB1580 12SB1316 2SB1567 2SB1287 2SD2195 2SD1980 2SD1867 2SD2398 2SD1765 1380/2SD TRANSISTOR D 1765 TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 DIODE B1316 transistor 1765
2sb1569a

Abstract: No abstract text available
Text: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 , CPT3 NP TL 2500 TO-220FN E 500 TO -220FP DE Code Basic ordering unit (pieces) ATV PQ TV2 2500 power 2SB1236A dissipation 2SB1569A.2SB 1186A — - 3 1 2SB1275 , = 1 M H z Measured using pulse current. (96-612-A58) Power Transistor (160V, 1.5A) I 2SD , MPT3 CPT3 ATV QR DQ* T100 1000 QR — PQ - TL 2500 TV2 2500 Code Basic


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PDF 2SB1275 2SB1236A 2SB1569A 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c
D947F

Abstract: 2SD947F transistor d 947f TRANSISTOR 2sd947f
Text: Transistors 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F ·F e a tu re s 1 , ) C om plem ents the 2 S D 1 7 5 9 / 2 S D 1 861 / 2SD 947F. · C i r c u i t sc h e m a tic I , - 200k TL 2500 T¡ Tsto Pc Sym bol V cbo V cgr Veso Limits -4 0 -4 0 -5 ~2 -3 1 10 1 1.2 5 150 -~ 5 5~1 50 , , collector plating 1 cm* or larger 2SB1S39 ATV 1k- T146 2500 SSB7B6F TO-126FP 1k~ - · E le c t r ic a l , 1 7 5 9 / 2SD 1861 / 2 S D 94 7F · F e a tu re s 1 ) Darlington connection for high D C current


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PDF 2SB1183 2SB1239 2SB786F 2SD1759 2SD1861 2SD947F --40V, 2S81239 D947F 2SD947F transistor d 947f TRANSISTOR 2sd947f
2sd1763

Abstract: No abstract text available
Text: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor ( â , eter 2SB1236 Collector power dissipation 2SB1186 ATV TO -220FP QR TV 2 2500 EF , 4132 / 2SD 1857 / 2SD2343 / 2SD 1763 •F e a tu re s 1 ) High breakdown voltage. (BVceo=120V) 2 , PQR — — TV2 2500 500 Param eter Symbol Min. BVceo BV ceo BV ebo leso , ) Em itter-base breakdown vottage C ollector cu to ff current Unit 120 120 5 2 2SD 1857


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PDF 2SB1236/2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1236 30pFatVcBâ 2SD1857/2SD1763. 2SB1236 2SB1186 2sd1763
2SA series

Abstract: No abstract text available
Text: Bipolar transistors -2SA series TO-220FP, TO-220-FN, and HRT summary Table 8 TO-22QFP, TO-220-FN, and HRT general use transistors Package Applic ation TO-220FP TO-220FN Part no. 2SB1357 2SB1353 2SB1290 2SB1294 2SB1360 2SB1355 D rive r 2SB1335A 2SD 2096 2SD 2033A 2SD 1833 2SD 2038 2SD 1897 100 2SD , 2SD 2396 60 400 2SB1567 S e e Fig. 4 4 2SA1758 2SC4595 2SC4596 _2 2 1 0.5 0.1 H ig h h FE H , 10 k -2 -3 -3 3 2 o -1 2SB1340 S e e Fig. 4 4 2SB1568 S e e F ig . 44 2SD 2422 S e e Fig


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PDF O-220FP, O-220-FN, O-22QFP, O-220FP O-220FN 2SB1357 2SB1353 2SB1290 2SB1294 2SA series
Not Available

Abstract: No abstract text available
Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 Transistors Medium Power Transistor (Motor relay or Solenoid drive) I 2SD 2212 / 2SD 2143 / 2SD1866 / 2SD 1764 •F e a tu re s 1) 2) 3) 4 , 1k—10k TV2 2500 2SD2143 CPT3 1k~*10k TL 2500 28D1764 TO-220FP 1k—10k — 500 Param , -D87) 307 Bi-polar transistors ^Electrical characteristics (Ta=25'C ) Packages Transistors Packages ROHM has been manufacturing transistors since 1975. In the development of products, we constantly


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PDF 2SD2212 2SD2143 2SD1866 2SD1764 2SD1856 2SD2212 2SD2143 2SD1866
transistor A1515

Abstract: d2172 Transistor 2SA 2SB 2SC 2SD a1515 transistor transistor D1292 h7195 C1741A rkm 34 transistor IC TB 1238 AN transistor b1184
Text: the customer to select the type of product best suited to his needs, we offer transistors , diodes , a rling ton transistor Tf Transistors EM3 QRS QRS NPQ © @ hFE Basic order unii , 4713K 2SD 1383K 2SD 1484K 2SD 1757K 2SD 1781K 2SD 1782K 2SD 2114K 2SD 2226K DTA113ZK DTA114EK D TA114TK , Container ~ C Ï" ' hFE Basic order unii (pcs.) 1000 2500 2500 NPQ NP PQ R PQ R 1K - 2 0 0 K PQ R NPQ 1K - , 2SC2021LN 2SC 2063 2SC 2673 2SC 3080 2SC4045 2SC4775 2SD1055 2SD 1469 2SD 1787 2SD 2145 2SD 2312 D TA 113ZF


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PDF MCR01 transistor A1515 d2172 Transistor 2SA 2SB 2SC 2SD a1515 transistor transistor D1292 h7195 C1741A rkm 34 transistor IC TB 1238 AN transistor b1184
2SD1659

Abstract: 2SB689F 2sb123b
Text: * T100 1000 2SD1659 ATV QR - TV2 2500 2SD 1200F TO -126FP QR - - 1000 C ollector power , Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F ·F e a tu re s I Medium Power Transistor (-80V, -0.7A) · A b s o lu t e m axim um ratings (T a = 2 5 'C ) Param eter , 2500 2SB689F TO -126FP Q - - 1000 Coffector power dissipation Junction tem perature Storaa© tem , 2SD 1767 DC current transfer ratio 2SD1859,2SD12Ü0F Transition frequency Output caoacitance Symbol B


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PDF 2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F --80V, 2SB123B 2SB689F -126FP 2SD1659
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: €” INTRODUCTION This comparative data book .transistor 2“ contains more than 19000 different transistors and , indicated. "c With transistors , the usal situation is for UC 0 (collector basis reverse B bias) to be quoted , quoted. S With transistors , lc (collector current) is allways quoted. If this is followed by (ss) in , the pin code on the fold-out table, which is divided into transistors and FETs. ALTERNATE-TYPE PART , de caracteristiques et d’equivalences .transistor 2" comporte plus de 19000 differents transistors


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PDF
2SC5858

Abstract: transistor c5858 c5858 2sc5570 C5446 S2055n 2SC5587 2SC5859 2SC5588 2sc 5587
Text: . & 2SD . 2SC. Transistors 19 inch / to 120 kHz 21inch / to 130 kHz 19 inch / to 100 kHz , OK OK Note 2SC. & 2SD . 2SC. Transistors VCBO (V) 1500 1500 1500 1500 1500 , 50 50 50 50 50 40 50 50 50 50 50 2SD . & S2. Transistors Dumper , 1 Horizontal ­ Deflection ­ Output Power Transistors February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Transistors DP0540034_01 2 High Voltage TR


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PDF DP0540034 2SC5716 2SC6041 2SC5857 2SC5858 2SC5859 2SC5997 2SC5748 2SC5588 2SC5588( 2SC5858 transistor c5858 c5858 2sc5570 C5446 S2055n 2SC5587 2SC5859 2SC5588 2sc 5587
2SD2422

Abstract: 2SD242 2sd transistors equivalent
Text: °c 441 Leaded Transistors noHm 2SD2422 Transistor, NPN, 2SD series Electrical , ) Figure 2 442 RONRI Leaded Transistors Transistor, NPN, 2SD series 2SD2422 C O L L E C T O , ) Figure 7 Leaded Transistors n o N m Figure 8 443 2SD2422 Transistor, NPN, 2SD series ÎO 8 > UJ , Package Code Basic order quantity 2SD 2422 500 Bulk = Standard, = S em i-standard, * = Special order COLLECTOR TO BASE VOLTAOE : Voa (V) Figure 11 444 M N ffl Leaded Transistors


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PDF 2SD2422 O-220FP SC-67) O-220FP) 2SD2422 2SD242 2sd transistors equivalent
Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Drive IC 2SC3346 C3182N
Text: 2SP2012 ~]2SB1375 C32SD2127 H 2S C 3475 H 2SD 2092 2 S D 2 I2 9 2SB 14U 2SC 3I48 H 2 S C 3559 4 5 2SC2562 2SA1012 :'32SC3299 H 2SA 1307 [J2SA 1387 H 2SD 1948 2 S D 2 J3 ! 2SD526 2SB596 · 2SD686 ·2 S B 6 7 6 H 2SD 1408 2 S B IG I7 2 S D 2414 2SB1024 2SC3258 2SA1293 [J2S C 3540 H 2SA 1388 , 1021 ·2 S D 6 3 3 ·2 S B 6 7 3 2SD H 15 2SB1020 ·2 S D 7 9 9 2SD 1409 7 8 10 l j 2SA1327 , ) |C ( A ) ^ ^ J S | 30 2SD 1224 A n c m c ftfl 40 60 80 100 2SD 689 2SB 679 250


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PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Drive IC 2SC3346 C3182N
ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: .transistor 1" contains more than 19000 different transistors and FET’s, all of which are listed , apply at 25°C, unless otherwise indicated. "c With transistors , the usal situation is for UC 0 , FETs, UD (drain source voltage) is always quoted. S With transistors , lc (collector current) is , transistors and FETs. ALTERNATE-TYPE PART Alternate type With the alternate types, attention has been paid to , " comporte plus de 19000 differents transistors et FET qui sont tous p re s e n ts parordre alphanumerique


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
2SC 1885

Abstract: 2sc low noise
Text: equivalent to TO-220, Pc=35W) transistors . EM3 · UMT · SMT Three types are available to allow the most , 2SB 1197K 2SB 1198K 2SC 2411K 2SD 1484K 2SD 1781K 2SD 1782K 2SD 1757K 2SB 852K 2SD 1383K 2SC 4061K 2SD 2114K 2SD 2226K R S E Q R S R S E Q R S R S E R S P Q R P Q R P 0 R P Q R P Q R PQ R PQ R P Q R Q R S , V ebo - 2SC 4097 2SD 1949 2SD 2351 EM3 · UMT * SMT High frequency type Package Application , ) Emitter (2) Base (3) Collector Actual size Enlarged ( x 3.0) * 73 Transistors EM3


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PDF O-220, SC-59/Japanese OT-23) 01CL2 2SC 1885 2sc low noise
2004 - LM5110-1M

Abstract: No abstract text available
Text: efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel , -3M LM5110-1SD LM5110- 2SD LM5110-3SD "A" Output Configuration Non-Inverting Inverting Inverting Non-Inverting , UVLO THRESHOLDS (V) 2.800 VCCF 0.390 2.500 0.330 2.200 0.270 1.900 VCCH , -1SDX LM5110-1SDX/NOPB LM5110-2M LM5110-2M/NOPB LM5110-2MX LM5110-2MX/NOPB LM5110- 2SD LM5110- 2SD /NOPB LM5110 , DPR DPR DPR D D D D DPR DPR DPR DPR D D 8 8 8 8 10 10 10 10 8 8 8 8 10 10 10 10 8 8 95 95 2500 2500


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PDF LM5110 SNVS255A LM5110 ns/12 LM5110-1M
Not Available

Abstract: No abstract text available
Text: V V Ii f e 2SD1759 CPT3 1 k~ 200k TL 2500 *2 W ( T c = 2 5 ‘C ) 1.2 2SD , 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor ( â , plating 1cm2 or larger. 2SB1239 ATV 1k~ T146 2500 CPT3 1k~ 200k TL 2500 liFE *2 W , . 2SD16Ô1 ATV 1 k— TV2 2500 2SD947F TO-126FP 1k— — 1000 C o n d itio n s lc = 5 0 f i , ratio 2 S D 1 0 6 1 .2 S D 9 4 7 F hFE C ob — — 1.5 V 1000 VcE(Mt) 2SD


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PDF 2SB1183 2SB1239 2SB786F 2SD1759 2SD1861 2SD947F D1759/2S /2SD947F.
2004 - Not Available

Abstract: No abstract text available
Text: SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5110- 2SD WSON , SOIC D 8 2500 367.0 367.0 35.0 LM5110- 2SD WSON DPR 10 1000 210.0 , bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads , Non-Inverting WSON-10 LM5110- 2SD Inverting Inverting WSON-10 LM5110-3SD Inverting , ) Figure 13. Figure 14. UVLO Thresholds and Hysteresis vs Temperature 0.450 VCCR 2.800 2.500


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PDF LM5110 SNVS255A LM5110 ns/12
2004 - llp10 weight

Abstract: No abstract text available
Text: D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM LM5110- 2SD ACTIVE , SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5110- 2SD WSON , SOIC D 8 2500 349.0 337.0 45.0 LM5110- 2SD WSON DPR 10 1000 203.0 , € output driver stage includes MOS and bipolar transistors operating in parallel that together sink more , Non-Inverting SOIC- 8 LM5110-1SD Non-Inverting Non-Inverting LLP-10 LM5110- 2SD Inverting


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PDF LM5110 SNVS255A LM5110 ns/12 llp10 weight
A 933 S transistors

Abstract: A933S A830-S a830s A854S 2SC1645 2sc low noise 933LN 2SD 92 M 2SA933LN
Text: 2SD 1468 2SD1960 2SA821 2SC1651 - 2SC 3415 2SA 830 2SA936 2SC1645 2SC2062 2SD2132 - - 2SD2144S 2 S , 2SC 3359S - 2SD 1768S 2S A 1585S - 2SC 4115S - 2SD 1468S - - - C H 7 2S A1835S Strobo Flash , 3 7 2SD2227S For RF transistors , see "RF Transistors " on Page Dimensions (Unit: mm) TO-92 3


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PDF O-92S) 2SA825 933LN 2SC1740 1740LN 2SC2389 2SC2808 2SC1741 2SC2872 2SC3359 A 933 S transistors A933S A830-S a830s A854S 2SC1645 2sc low noise 2SD 92 M 2SA933LN
Not Available

Abstract: No abstract text available
Text: 2SD2142K / 2SC2062S 2SD2470 Transistors High-gain Amplifier Transistor (32V, 12V) 2SD2142K , ka g in g specifications and hre 2SD 2142K 2SC2062S hre SMT3 5k-~ Code Basic ordering , Vce I Typ. 40 32 2SD 2142K DC current transfer ratio * Min. BVceo BVceo , Storage tem perature 2SD 2470 hFE SPT 270 —820 Code Basic ordering unit (pieces) * Single , Unit V V V A (D C) A (Pulse) W * Packages Transistors Packages ROHM has been


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PDF 2SD2142K 2SC2062S 2SD2470 2SD2142K 2062S 0Dlb713 O-220FN O-220FN
48v to 230v inverters circuit diagram

Abstract: i300n bi50l120 7MBR10NF120 2RI100G-160X2PX3 6DI15A050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog 1di200
Text: transistors FUJI supplies these versatile elem ents fo r a w ide range of electronic equipm ent. Please , otor control use DescrtÿtleiY ~ - Recommend« transistors : Circuit diagram* J FUJI reverse avalanche transistors : RAT Example 2SD1073 AC-DC m otor control V V VF Electronic vehicle NC m , 65 AC m otor control use Invertir* Input voK bb* capacity 24V DC 0 .3 0 .9 2SD 1049 2SD 1049 E , 440-4BÒV AC j Ì7S V A C 48V DC 100-120V AC 2SD 1071 2SD 835 200 230V A C 2SD 1072 6 D I1 0 A -0


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PDF 2SD834 2SD1071 2SD1073 BR15NF120 BR25NF120 I25L-120x3 I50L-120x3 -120x3 48v to 230v inverters circuit diagram i300n bi50l120 7MBR10NF120 2RI100G-160X2PX3 6DI15A050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog 1di200
uPC1298V-A

Abstract: upc1298 mpc 1237 PC1298V 1298V PC 1298V mpc 1298v UPC1298V c1298v PC1237
Text: 4 0 W 2SD 1283 2SD 2013 4 5 to 5 5 W 2SD 1289 2SD 1977 5 0 to 7 0 W 2SC 3012 2SC4267 70 to 8 0 W , in com bination w ith discrete pow er transistors . 2. (1) FEA TU RES A p prop riate com binations of pow er sup ply voltages and pow er transistors enables configuration o f various pow er am , T he firs t stage s a d iffe re n tial am p lifier form ed o f PNP transistors G 2 and Q 3 , whose , transistors f o r tem perature variatio ns. The voltage to set idling current (voltage between pins 7 and 8


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PDF
2SD2471

Abstract: 2SB927 2SD247 2SB92
Text: Ordering number: EN 1029C SAMYOi NO.1029C 2SB927/2SD1247 PNP/ NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications Applications . Power supplies, relay drivers, lamp drivers , =10V 2SD 124 7 2$ 39 27 Fc >r I >NP , min us , . 2.0 1.6 c 1 2 a» Ic - VCE o.e 0.4 2SD 247 <1 p vZi — ( W , PC - Ta u e 0 ■■rl -p rt Q. •H 01 co 1000 800 600 o o f 400 200 2SI 3927/ / 2SD 1247


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PDF 1029C 2SB927/2SD1247 2SB927 2SD2471 2SD247 2SB92
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