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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistors 13003 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
E 13003 TRANSISTOR

Abstract:
Text: TE 13003 a^QO'te DDORb'S? : AL GG Silicon NPN Power Transistors Applications: Switching , ^EBO *c ^ C M T E 13002 300 600 9 1,5 3 0.75 0.75 38 150 - 6 5 .+ 1 5 0 T E 13003 400 700 V V V A A A , TELEFUNKEN ELECTRONIC 17E D ODOUEfl 3 AL(S6 T-33-11 Min. Typ. Max. TE 13002 · TE 13003 , = 150°C, Vr 4S0 Lc. = 60 0 V · VCE = 70 0 V TE 13002 TE 13003 TE 13002 TE 13003 'CES 'cES , Collector-emitter breakdown voltage /c = 100 mA, i.c = 125 mH TE 13002 Fig. 1,2 TE 13003 Emitter-base breakdown


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PDF T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
act30bht

Abstract:
Text: scalable driver for driving external NPN or MOSFET transistors for line voltage switching. This , cost transistor such as ` 13003 (VCBO = 700V) or `13002 (VCBO = 600V) to be used for a wide AC input , NPN transistor such as ` 13003 or `13002 to be used safely in flyback configuration. The required , improved when it is driven at its emitter. Thus, the ACT30+'13002 or ` 13003 combination meet the necessary breakdown safety requirement even though RCC circuits using `13002 or ` 13003 do not. Table 1


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PDF ACT30 65kHz 100kHz ACT30 act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b npn transistors 400V low power to92 E 13003 TRANSISTOR ACT30aht
act30bht

Abstract:
Text: scalable driver for driving external NPN or MOSFET transistors for line voltage switching. This , , allowing a low cost transistor such as ` 13003 (VCBO = 700V) or `13002 (VCBO = 600V) to be used for a wide , EXTERNAL POWER TRANSISTOR The ACT30 allows a low-cost high voltage power NPN transistor such as ` 13003 or , . Thus, the ACT30+'13002 or ` 13003 combination meet the necessary breakdown safety requirement even though RCC circuits using `13002 or ` 13003 do not. Table 1 lists the breakdown voltage of some


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PDF ACT30 65kHz 100kHz ACT30 man50 act30bht 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht flyback 13003 act30bh act30 application
MOTOROLA 13003

Abstract:
Text: MOTOROLA TECHNICAL DATA SEMICONDUCTOR MRW3000 Series 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER TRANSISTORS The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. · Designed for Class B or C, Common Base Linear Power Amplifiers · Specified 28 Volt, 3 GHz Characteristics: Output Power - 1 , Voltage Operating Ju nctio n Tem perature Storage Tem perature Range Symbol v CB0 v EBO 3001 ,F 13003 ,F


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PDF MRW3000 TRW3000 MOTOROLA 13003 F 13003 TU F 13003 3001F f13003 F 13005 d 13003 t 3003F cc 3001 3005F
2010 - ic 7408 datasheet

Abstract:
Text: 2SC5915 Ordering number : EN7408A SANYO Semiconductors DATA SHEET 2SC5915 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications · Relay drivers, lamp drivers, motor drivers, inverters. Features · · · · · Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface , . www.semiconductor-sanyo.com/network 22410FA TK IM / 13003 TS IM TA-100348 No.7408-1/4 2SC5915 Electrical Characteristics


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PDF 2SC5915 EN7408A ic 7408 datasheet IC 7408 data sheet IC 7408 7408 ic diagram 7408 IC and 7408 ic 7408 and 7408 2SC5915 13003 HE
13003 TRANSISTOR equivalent

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by MJE13002/D D esigner's TM Data Sheet M JE 13002* M JE 13003 * ` M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw , Capability SOA and Switching Applications Information. 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND , most switching transistors , resistive switching is specified at 25°C and has become a benchmark for


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PDF MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
Chip-Rail

Abstract:
Text: Page No. : 1/7 RS2030X Lowest Cost Green-Power Off-Line PWM Controller Description The RS2030 is a high performance green-power offline power supply PWM controller. It features a scalable driver for driving external NPN ( 13003 ) or MOSFET transistors for line voltage switching. This proprietary architecture enables many advanced features to be integrated into a small package (TO-92), resulting in lowest total cost solution. The RS2030 automatically enters the CRM (Cycle Reset Mode) under


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PDF RS2030X RS2030 DS-RS2030X-EN-V1 Chip-Rail power bjt sw 13003 transistor EN 13003 13003 MOSFET transistor EN 13003 A 13003 TO-92 "Power bjt sw 13003 MOSFET act30 application
TFK diodes BYW 76

Abstract:
Text: .4 . 'W i i IFWCCIRQ electronic ry Creative Technologies Selection guide transistors and , 16 18 23 22 19 19 19 21 20 19 18 18 18 18 18 21 T E 13002 TE 13003 TE 1 3 004 TE , package Fast recovery power diodes in power package NPN-small signal transistors for general and AF-applications PNP-small signal transistors for general and AF-applications PNP-small signal transistors common , 10 15 16 16 Dual gate GaAs MES-FET's (N-channel-depletion mode) NPN-small signal transistors


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1997 - 13003 TRANSISTOR equivalent

Abstract:
Text: detection terminal 1.25 0.2 (5.2) (6.6) 13.0±0.3 6.5±0.3 0.2 s Block Diagram VCC 22 23 , figure, when high signal is applied to the brake terminal 20, the lower side transistors are turned on to


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PDF AN8293SA, AN8293SC AN8293SA AN8293SC AN8293SA AN8293SA) AN8293SC) 60mVP 13003 TRANSISTOR equivalent transistor sw 13003 CS 13003 transistor 13003 switch mode circuit EC-19S
21 SMD transformer

Abstract:
Text: band transformers, transistors and for impedance conversion. Application of SMD choke coils specific , mixers, and as broad band transformers, transistors and for impedance conversion. Token RF Balun , transformers, transistors and for impedance conversion. Token will also produce devices outside these , -3 60+1 -0 D: 13.0±0.3 2.0±0.5 9.5±0.50 Reel Specifications 11.4±1.0 Type TCPWCH05


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PDF TCPWCH05, TCPWCH06 EIA0805 21 SMD transformer audio balun smd #617DB-1646 TAPING Transmission-Line Conversion Transformers TCB5F-458DB-1616 balun transformer balun transformer 75 ohm 617DB-1655 300 ohms balun SMD Transformer
2003 - ua80

Abstract:
Text: developed utilizing CMOS technology. Built-in low ON-resistance transistors provide low dropout voltage , ON-resistance characteristic transistors . 2. Low ESR ESR is the abbreviation for Equivalent Series Resistance , No. UP003-A-C-SD-1.1 SCALE UNIT mm Seiko Instruments Inc. 16.5max. 13.0±0.3 , Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the central part (60°) (60


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PDF S-814 S-814 OT-23-5 OT-89-3 OT-89-5 ua80 13003 regulator 3v S-814A24AMC-BCO-T2 S-814A23AMC-BCN-T2 S-814A22AMC-BCM-T2 S-814A21AMC-BCL-T2 S-814A20AMC-BCK-T2 Voltage Regulator SOT-23-5 13003 TRANSISTOR equivalent
2012 - REGULATOR sw 13003

Abstract:
Text: operate in an unstable mode easily due to wrong feedback information. NPN transistors with HFE of 20 , L1 Axial Inductor, 1.5mH, 0410,Dip 1 10 Q1 Transistor, HFE 20-25, NPN, 13003 ,TO


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PDF ACT334 14-Nov-12 ACT334 REGULATOR sw 13003 13003 switch mode circuit
2002 - 13003 TRANSISTOR equivalent

Abstract:
Text: stray capacitances of transistors and circuit patterns. Therefore, the load capacitance CL is given by , ø13.0±0.5 label 17.0±0.3 *1 19.4±1 *2 H G J t *1 TSX-8A, -10A : 13.0±0.3 , TSX-11 : 9.0±0.3 #1


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1997 - TRANSISTOR si 13003 br

Abstract:
Text: -24D) built-in AN8293SC 13 (5.2) (6.6) 13.0±0.3 12 1.0 24 0.5 NC 2 NC 3 NC , 20, the lower side transistors are turned on to set the motor coil to the short condition and the


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PDF AN8293SA, AN8293SC AN8293SA AN8293SA) AN8293SC) TRANSISTOR si 13003 br an8293 AN829 AN8293SA AN8293SC snubberless APPLICATION NOTE transistor ST 13003 w, TO-126
2007 - UA80

Abstract:
Text: Rev.2.0_01 LOW DROPOUT CMOS VOLTAGE REGULATOR S-814 Series The S-814 Series is a low dropout voltage, high output voltage accuracy and low current consumption positive voltage regulator developed utilizing CMOS technology. Built-in low ON-resistance transistors provide low dropout voltage , its internal low ON-resistance characteristic transistors . 2. Low ESR ESR is the abbreviation for , Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the central part (60°) (60


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PDF S-814 S-814 OT-23-5 OT-89-5 UA80 13003 regulator 3v S-814A20AMC-BCKT2G S-814A21AMC-BCLT2G S-814A22AMC-BCMT2G
2003 - ua80

Abstract:
Text: Rev.1.6_00 LOW DROPOUT CMOS VOLTAGE REGULATOR S-814 Series The S-814 Series is a low dropout voltage, high output voltage accuracy and low current consumption positive voltage regulator developed utilizing CMOS technology. Built-in low ON-resistance transistors provide low dropout voltage and , characteristic due to its internal low ON-resistance characteristic transistors . 2. Low ESR ESR is the , . 13.0±0.3 Enlarged drawing in the central part (60°) (60°) No. UP005-A-R-SD-1.1 TITLE No. SCALE


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PDF S-814 OT-23-5 OT-89-5 ua80
2005 - Not Available

Abstract:
Text: Rev.2.0_00 LOW DROPOUT CMOS VOLTAGE REGULATOR S-814 Series The S-814 Series is a low dropout voltage, high output voltage accuracy and low current consumption positive voltage regulator developed utilizing CMOS technology. Built-in low ON-resistance transistors provide low dropout voltage and , ON-resistance characteristic transistors . 2. Low ESR ESR is the abbreviation for Equivalent Series Resistance , . 13.0±0.3 Enlarged drawing in the central part (60°) (60°) No. UP005-A-R-SD-1.1 TITLE No. SCALE


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PDF S-814 OT-23-5 OT-89-5
1999 - Not Available

Abstract:
Text: ON-resistance transistors provide low dropout voltage and large output current. A shutdown circuit ensures long , characteristic due to its internal low ON-resistance characteristic transistors . 2. Low ESR ESR is the , . 13.0±0.3 Enlarged drawing in the central part (60°) (60°) No. UP005-A-R-SD-1.1 TITLE No. SCALE


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PDF S-814 OT-23-5 OT-89-5
2004 - Not Available

Abstract:
Text: Rev.1.7_00 LOW DROPOUT CMOS VOLTAGE REGULATOR S-814 Series The S-814 Series is a low dropout voltage, high output voltage accuracy and low current consumption positive voltage regulator developed utilizing CMOS technology. Built-in low ON-resistance transistors provide low dropout voltage and , voltage characteristic due to its internal low ON-resistance characteristic transistors . 2. Low ESR ESR is , SOT895-A-Carrier Tape UP005-A-C-SD-1.1 mm Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in


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PDF S-814 OT-23-5 OT-89-5
2007 - BDGT2G

Abstract:
Text: Rev.2.1_00 LOW DROPOUT CMOS VOLTAGE REGULATOR S-814 Series The S-814 Series is a low dropout voltage, high output voltage accuracy and low current consumption positive voltage regulator developed utilizing CMOS technology. Built-in low ON-resistance transistors provide low dropout voltage , dropout voltage characteristic due to its internal low ON-resistance characteristic transistors . 2. Low , -1.1 No. SCALE UNIT mm Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the


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PDF S-814 S-814 OT-23-5 OT-89-5 BDGT2G REGULATOR 13003 S-814A20AMC-BCKT2G S-814A21AMC-BCLT2G S-814A22AMC-BCMT2G S-814A27AMC-BCR voltage REGULATOR 13003
1999 - S-814A

Abstract:
Text: ON-resistance transistors provide low dropout voltage and large output current. A shutdown circuit ensures long , transistors . 2. Low ESR ESR is the abbreviation for Equivalent Series Resistance. The low ESR output , -1.1 No. SCALE UNIT mm Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the


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PDF S-814 OT-23-5 OT-89-5 S-814A S-814A30AUC-BCU S-814A50AUC-BDO voltage regulator sot-89-5
bq 8050

Abstract:
Text: Switching Diodes G Small Signal Schottky Diodes H BIPOLAR TRANSISTORS J FIELD EFFECT TRANSISTORS M DIGITAL TRANSISTORS M ZENER DIODES O TVS DIODES O VOLTAGE , -23 SOT-23 BIPOLAR TRANSISTORS SOT-323 SOT-323 BIPOLAR TRANSISTORS SOT-363 SOT-363 BIPOLAR TRANSISTORS SOT-523 SOT-523 BIPOLAR TRANSISTORS 14 20 21 22 FIELD EFFECT TRANSISTORS 27 DIGITAL TRANSISTORS 23 ZENER DIODES 31 TVS DIODES SOT-89 SOT-89 BIPOLAR TRANSISTORS


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PDF OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
2006 - S1206B30-U3T1G

Abstract:
Text: Characteristics (Typical Data)" is built into the S-1206 Series to protect output transistors from excessive , UNIT mm Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the central part


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PDF S-1206 OT-23-3, OT-89-3, S1206B30-U3T1G M3T1G S1206B33U3T1G S-1206B33-U3T1G S-1206B30-M3T1G S-1206B33-M3T1G S-1206B12-M3T1G S-1206B15M3T1G S1206B30-M3T1G S-1206B20-M3T1G
transistor 13003 AD

Abstract:
Text: -00803 8 RM0008N50 5.000 KLR8C RL- 13003 130 RM0130P30 0.300 KLR130C RL , (PWM) inverters with IGBT high speed transistors , has resulted in smaller more cost effective drives


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PDF
2006 - S-1206B30-M3T1G

Abstract:
Text: Characteristics (Typical Data)" is built into the S-1206 Series to protect output transistors from excessive , UNIT mm Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the central part


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PDF S-1206 OT-23-3, OT-89-3, S-1206B30-M3T1G S-1206B33-M3T1G S-1206B12-M3T1G S-1206B13-M3T1G S-1206B27 S-1206B31-M3T1G
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