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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor z5 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR Z4

Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z3 transistor z4 51 IRF 1470 rt230pd
Text: Power Transistor RT230PD Product Features Application · 50 ~ 4000 MHz · 18dB Gain , specifications may change without notice. Version 5.2 Power Transistor RT230PD Electrical , specifications may change without notice. Version 5.2 Power Transistor RT230PD Application Circuit , RT230PD Z5 Z4 C11 C9 Bill of Material Text Value Size(mm) Text Value Size , 51 1608 Z5 1.43.0 R2 8.2 1608 Tel : 82-31-250-5011 rfsales@rfhic.com WL


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PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z3 transistor z4 51 IRF 1470
2008 - transistor C4

Abstract: No abstract text available
Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain , Power Transistor RT230PD Electrical Specifications Parameter UNIT Typical Frequency , without notice. ▪ Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 , + R1 - L2 L1 RF IN C8 L3 Z2 R2 Z1 Z3 RF OUT C10 RT230PD Z5 , „¦ 1608 Z5 1.4ⅹ3.0 R2 8.2 Ω 1608 ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com


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PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4
2001 - sot23-5 aaak

Abstract: sot23-5 mosfet driver aaai sot23-5 SOT-23 AAAA transistor acby sot23-5 SOT-23 5 PIN sot23-5 mos p-channel SOT-23 jb AAAG JB SOT23-5
Text: increments. Designed with an internal P-channel MOSFET pass transistor , the MAX8877/MAX8878 maintain a low , , the MAX8877/MAX8878 consist of a 1.25V reference, error amplifier, P-channel pass transistor , and , MAX8877/MAX8878 feature a 1.1 typical P-channel MOSFET pass transistor . This provides several advantages , considerable current in dropout when the pass transistor saturates. They also use high base-drive currents , ground plane. MAX8877/MAX8878 Internal P-Channel Pass Transistor Reverse Battery Protection The


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PDF 150mA MAX8877/MAX8878 150mA. 165mV 100mV pk/1806/t/or 27-Nov-2008 sot23-5 aaak sot23-5 mosfet driver aaai sot23-5 SOT-23 AAAA transistor acby sot23-5 SOT-23 5 PIN sot23-5 mos p-channel SOT-23 jb AAAG JB SOT23-5
1996 - transistor z5

Abstract: 027w TRANSISTOR Z4 Transistor z1 10KW
Text: COMMON BASE bipolar transistor . It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm , C5 50 VDC R1 L1 Z5 C2 Input 50 Ohms Z1 Z2 Q1 C3 Z3 Z4 50 Ohm Output C1 PC Board Material .010" Dielectric Teflon Fiberglass Note: Slide C2 along Z5 for best tuning , X any convenient length L1=Inductor, #18 wire, 1.5" long Z5 =50W , .12l , =.027"w X .86"L


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PDF 25oC2 12mfd, transistor z5 027w TRANSISTOR Z4 Transistor z1 10KW
1997 - transistor z5

Abstract: erie redcap transistor D 716 7w120 redcap MRF392 TRANSISTOR Z4 RF push pull power amplifier NPN TRANSISTOR Z4 IC 2025
Text: Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large­signal output and driver , "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON · Built­In Input Impedance Matching , ) FUNCTIONAL TESTS (2) - See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push­pull amplifier. L5 C11 B1 C12 , Z3 C5 Z5 C6 Z6 C7 C8 Z3 Z4 C2 Z5 Z6 C10 D.U.T. L2 L4 L6 C16


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PDF MRF392/D MRF392 MRF392 i1-44-844-8298 transistor z5 erie redcap transistor D 716 7w120 redcap TRANSISTOR Z4 RF push pull power amplifier NPN TRANSISTOR Z4 IC 2025
1996 - TRANSISTOR Z4

Abstract: Z227 transistor z5 443l transistor Z2 transistor DF 50 Z1 Transistor Transistor z1 BVces 960-1215 MHz transistor 20W
Text: a COMMON BASE bipolar transistor . It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes , Z4 Z5 50 Ohm Output C3 C6 C4 C5 PC Board Material .010" Dielectric Teflon Fiberglass , Z4=3.7W , .08l , =.55"w X .55"L Z5 =50W , .075l , =.027"w X .56"L L1= Inductor #14 wire, 0.7" long , (100mil) ATC R1= Resistor, 15WK 1/4W Q1=GHz Transistor 0912-45 All electrical lengths taken at 1.09 GHz


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PDF 25oC2 100mil) 68mfd, TRANSISTOR Z4 Z227 transistor z5 443l transistor Z2 transistor DF 50 Z1 Transistor Transistor z1 BVces 960-1215 MHz transistor 20W
2001 - TRANSISTOR Z4

Abstract: No abstract text available
Text: Transistor Designed primarily for wideband large­signal output and driver amplifier stages in the 30 to 500 , "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON CASE 744A­01, STYLE 1 The MRF392 is two , , Pout = 125 W, f = 400 MHz, VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push­pull amplifier. L5 C11 C12 C13 + C14 C15 + 28 V ­ Gpe , C9 Z5 C7 Z5 L4 Z6 C8 Z6 C10 B2 Z3 C5 Z3 C6 Z4 L2 D.U.T. L6 C16 C17 C18 C19 C1


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PDF MRF392 MRF392 TRANSISTOR Z4
2012 - ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Arsenide pHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications , Z5 C3 C1 C2 C22 C21 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 C20 Z17 C19 Z12 C18 C17 C16 C15 C14 C13 C12 , . MRFG35010ANT1 Test Circuit Microstrips - 3550 MHz Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z10 Description 0.045 x , Transistor 51 , 1/10 W Chip Resistor 4.7 , 1/10 W Chip Resistor 0.020, r = 3.5 Part Number ATC600F101JT250XT , C1 Z2 Z3 C2 Z4 L1 C20 Z5 R2 Z6 C21 Figure 9. MRFG35010ANT1 Test Circuit Schematic - 750 MHz


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PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
2012 - ATC100B471JT200XT

Abstract: EB-38 CDR33BX104AKWY ATC100B4R3CT500XT ATC100B181JT300XT 651AT MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , 74.5 74.7 60 IMD (dBc) -30 - - - 1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR , Cycle) CW (Top View) Note: The backside of the package is the source terminal for the transistor , C1 C2 C3 C4 L1 RF INPUT Z11 Z1 C5 C6 C7 C8 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C9 DUT C10 Z12 Z13 Z14 Z15 Z16


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PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 CDR33BX104AKWY ATC100B4R3CT500XT ATC100B181JT300XT 651AT C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
1996 - z3 transistor

Abstract: TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3
Text: 0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor . It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes , Z4 Z5 C5 C1 C2 PC Board Material .010" Dielectric Teflon Fiberglass Z1=50W , .112l , tuning Z4=10W , .04l, , .2"w X .28"L Z5 =18.3W , .25l, , .1"w X .18"L August 1996 C1, C2=Capacitor


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PDF 25oC2 100mil) z3 transistor TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3
Not Available

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR IMD (dBc) 1.8 to 30 (1) Two-Tone (10 , ) Note: The backside of the package is the source terminal for the transistor . Figure 1. Pin , C3 C4 C13 C14 C15 L2 L1 Z11 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7


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PDF MRFE6VS25N MRFE6VS25NR1 25cale
2014 - Not Available

Abstract: No abstract text available
Text: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio , RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz , for the transistor . Figure 1. Pin Connections  Characterized for Operation from 136 to 941 , C8 L1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF Z15 OUTPUT , 0.160  0.320  0.620 Taper Z12 0.379  0.320 Microstrip Z5 0.058 ï


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PDF MMRF1021N MMRF1021NT1
1997 - MRF392

Abstract: TRANSISTOR Z4 J044 3142 equivalent transistor Z6 Z1 Transistor 6 pin Z6 82 mini cap 744A-01 LX125
Text: Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large­signal output , CONTROLLED "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON · Built­In Input Impedance Matching , ) FUNCTIONAL TESTS (2) - See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push­pull amplifier. L5 C11 B1 C12 + , C5 Z5 C6 Z6 C7 C8 Z3 Z4 C2 Z5 Z6 C10 D.U.T. L2 L4 L6 C16


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PDF MRF392/D MRF392 MRF392/D* MRF392 TRANSISTOR Z4 J044 3142 equivalent transistor Z6 Z1 Transistor 6 pin Z6 82 mini cap 744A-01 LX125
Not Available

Abstract: No abstract text available
Text: Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output , CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON • Built–In Input Impedance , . Each transistor chip measured separately. 2. Both transistor chips operating in push–pull amplifier , C4 C3 Z1 Z2 Z4 Z3 C5 Z5 C6 Z6 C8 C7 Z3 Z4 C2 Z5 Z6 C10 , 280 Mil L x 125 Mil W Z4 — Microstrip Line 300 Mil L x 125 Mil W Z5 — Microstrip Line 350 Mil L


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PDF MRF392/D MRF392 MRF392/D*
2001 - LCD VCOM

Abstract: No abstract text available
Text: active matrix, dot inversion thin film transistor (TFT) liquid crystal display (LCD). The MAX1886's high , reference voltage. Chip Information TRANSISTOR COUNT: 121 PROCESS: BiCMOS , /variation: Z5 +1* SOT-23;5 pin;1.0 mm ht. Dwg: 21-0113C (PDF) Use pkgcode/variation: Z5 -1* SOT-23;5 pin;1.0 mm ht. Dwg: 21-0113C (PDF) Use pkgcode/variation: Z5 -1* SOT-23;5 pin;1.0 mm ht. Dwg: 21-0113C (PDF) Use pkgcode/variation: Z5 +1* -40C to +85C RoHS/Lead-Free: Yes Materials Analysis -40C to +85C RoHS


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PDF MAX1886 500mA MAX1886EZK+ OT-23 21-0113C LCD VCOM
1997 - Z1 Transistor

Abstract: MRF392
Text: Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large­signal output and driver , "Q" BROADBAND PUSH­PULL RF POWER TRANSISTOR NPN SILICON ARCHIVE INFORMATION · Built­In Input , Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips , + C9 C1 Z1 Z2 C4 C3 Z1 Z2 Z4 Z3 C5 Z5 C6 Z3 D.U.T. L2 C8 C7 Z4 C2 Z6 Z5 Z6 C10 L4 L6 C16 C1, C2 - 240 pF, 100 Mil Chip Cap (ATC) or


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PDF MRF392/D MRF392 MRF392/D* Z1 Transistor MRF392
Z6 3pin

Abstract: J262 AFT09MS007NT1
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 , 136–941 MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = , the source terminal for the transistor . Figure 1. Pin Connections Features  Characterized , INPUT Z1 C8 L1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF , ‚² Microstrip Z5 0.058  0.620 Microstrip Z13 0.055  0.320 Microstrip Z6


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PDF AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1
1998 - 12v class d amplifier 70W

Abstract: 25E03 HIP4080A 001-AA transistor AHs
Text: Voltage to 60V · rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V · rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V · Pulsed Current . . . . . . . . . . . . . . . . 25A Each Transistor · Avalanche Energy . . . . . . . . . . 100mJ Each Transistor · Grounded Tab Eliminates Heat Sink Isolation , -40 to 125 PACKAGE 5 Ld SIP 5 Ld Gullwing SIP 5 Ld SIP PKG. NO. Z5 .067C Z5 .067A Z5 .067B GATE1 1 , -169 HIP2060 AS2 1 1 GATE1 2 GATE2 3 SOURCE2 4 SOURCE1-DRAIN2 5 DRAIN1 (TAB) Z5 .067B (SIP) HIP2060 AS3


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PDF HIP2060 HIP2060 1-800-4-HARRIS 12v class d amplifier 70W 25E03 HIP4080A 001-AA transistor AHs
2007 - MJD310

Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
Text: R3 R4 B2 C5 Z6 C7 C8 Z12 C10 C11 C13 R5 B3 B4 C16 + C18 VDD RF INPUT Z5 Z1 Z2 C1 Z3 C2 C6 Z4 Z7 Z8 C9 DUT Z9 Z10 Z11 Z13 Z14 C15 C12 C14 Z15 Z16 RF OUTPUT C17 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 , L2 Z3 Z4 C3 C6 Z5 L3 Z6 L4 DUT Z7 C9 C12 C15 Z8 Z9 Z10 L5 Z11 C17 RF OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.122 x 0.08 Microstrip 0.650 x 0.08 Microstrip 0.160 x 0.08 Microstrip 0.030 x 0.08 , Q1 Q2 B1 C13 C14 R9 C16 R10 C18 C20 B2 B3 VDD R5 C1 VDD R7 + L2 RF OUTPUT Z5 Z6 Z7 C17 Z8 Z9


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PDF MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
2013 - N/A9M07

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 , MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 V, Pin = 0.25 , source terminal for the transistor . Figure 1. Pin Connections AFT09MS007NT1 1 Table 1. Maximum , INPUT Z1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF Z15 OUTPUT , — 0.320″ Taper 0.379″ × 0.320″ Microstrip Z5 Z6 0.058″ × 0.620″ Microstrip 0.288″ Ã


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PDF AFT09MS007N AFT09MS007NT1 N/A9M07
2014 - A5M06

Abstract: Transistor Z17
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 , , 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 6.0 Wideband Performance (7.5 Vdc, TA = 25C, CW , the source terminal for the transistor . Figure 1. Pin Connections  Output Stage VHF Band , ‚² Microstrip Z5 0.045  0.620 Microstrip 0.190  0.320 Microstrip Z4 Z7 0.055ï , C14 + Description Figure 5. AFT05MS006NT1 Narrowband Test Circuit Schematic — 520 MHz Z5


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PDF AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17
2014 - A5M0

Abstract: IC 2 5/A5M06
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 , , 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 6.0 Wideband Performance (7.5 Vdc, TA = 25C, CW , the source terminal for the transistor . Figure 1. Pin Connections  Output Stage VHF Band , ‚² Microstrip Z5 0.045  0.620 Microstrip 0.190  0.320 Microstrip Z4 Z7 0.055ï , C14 + Description Figure 5. AFT05MS006NT1 Narrowband Test Circuit Schematic — 520 MHz Z5


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PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06
2002 - AN8610

Abstract: 12v class d amplifier 70W ic 067b MO-169 HIP2060AS3 HIP2060AS2 HIP2060AS1 HIP2060 Switching Power supply with HIP4080A LAMBDA AS3
Text: and ruggedness. · Output Voltage to 60V · rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V · rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V The HIP2060 is designed to integrate , , and Class D Power Amplifier. · Pulsed Current . . . . . . . . . . . . . . . .25A Each Transistor · Avalanche Energy . . . . . . . . . . 100mJ Each Transistor · Grounded Tab Eliminates Heat Sink Isolation , -40 to 125 5 Ld SIP Z5 .067C HIP2060AS2 -40 to 125 5 Ld Gullwing SIP Z5


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PDF HIP2060 HIP2060 1350P 5e-03 5e-08 150e-03 5950u) 15e-02 AN8610 12v class d amplifier 70W ic 067b MO-169 HIP2060AS3 HIP2060AS2 HIP2060AS1 Switching Power supply with HIP4080A LAMBDA AS3
25E03

Abstract: No abstract text available
Text: Transistors · Output Voltage to 60V · rDS(QN) Max Per Transistor at VGS = 15V · rDS(ON) .0.1 5Q Max Per Transistor at VGS = 10V · Pulsed C u rre n t. 25A Each Transistor · Avalanche E n e r g y . 100mJ Each Transistor · Grounded Tab Eliminates , ) -40 t o +125 -40 to +125 PACKAGE 5 Ld SIP 5 Ld Gullwing SIP PKG. NO. Z5 .067C Z5 .067A NOTE: When , 0.006 -B- (0.15) C2 Z5 .067A 5 LEAD PLASTIC SINGLE-IN-LINE PACKAGE SURFACE M OUNT "G ULLW ING" LEAD


OCR Scan
PDF HIP2060 TS-001A HIP2060 100mJ 1-800-4-HARRIS 25E03
2007 - SMD Transistor z6

Abstract: Transistor smd Z3 transistor SMD Z2 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 SMD TRANSISTOR MARKING Z2 transistor Z6 SMD z6
Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - , Semiconductor Wireless RF Product Device Data 5 - 357 Z5 VSUPPLY VBIAS R1 R2 C1 R3 RF INPUT C9 Z1 C4 Z2 C5 , k Chip Resistor (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 0.60 x 0.09 Microstrip 1.00 x 0.09 Microstrip , C6 Z2 C7 Z3 Z6 Z4 Z5 C8 Z7 RF OUTPUT C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 , Transistor Z1 0.159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x


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PDF GSM1930 MRF18060BLSR3 SMD Transistor z6 Transistor smd Z3 transistor SMD Z2 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 SMD TRANSISTOR MARKING Z2 transistor Z6 SMD z6
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