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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor z14 smd Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Arsenide pHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications , Z5 C3 C1 C2 C22 C21 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 C20 Z17 C19 Z12 C18 C17 C16 C15 C14 C13 C12 , Z9 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Description 0.025 x 0.485 Microstrip 0.400 x 0.215 Microstrip 0.025 x , Transistor 51 , 1/10 W Chip Resistor 4.7 , 1/10 W Chip Resistor 0.020, r = 3.5 Part Number ATC600F101JT250XT , VDD C4 C3 C15 C16 Z11 L2 Z7 Z9 Z10 Z12 C17 Z13 C18 Z14 C19 Z15 RF OUTPUT Z8 R1 RF INPUT Z1


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PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
2014 - Not Available

Abstract: No abstract text available
Text: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio , RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz , for the transistor . Figure 1. Pin Connections  Characterized for Operation from 136 to 941 , Z14 Z7 C9 C5 Z12 C16 C14 C7 Figure 6. MMRF1021NT1 Narrowband Test Circuit , Z14 0.665  0.120 Microstrip Z7 0.394  0.620 Microstrip Z15 0.238 ï


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PDF MMRF1021N MMRF1021NT1
Z6 3pin

Abstract: J262 AFT09MS007NT1
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 , 136–941 MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 Vdc, TA = , the source terminal for the transistor . Figure 1. Pin Connections Features  Characterized , Z15 OUTPUT Z14 Z7 C9 C5 Z12 C16 C14 C7 Figure 6. AFT09MS007NT1 Narrowband , 0.288  0.620 Microstrip Z14 0.665  0.120 Microstrip Z7 0.394  0.620ï


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PDF AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1
2014 - A5M06

Abstract: Transistor Z17
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 , , 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 6.0 Wideband Performance (7.5 Vdc, TA = 25C, CW , the source terminal for the transistor . Figure 1. Pin Connections  Output Stage VHF Band , ‚²  0.080 Microstrip Z1 Microstrip Z14 C15 C13 C16 Z15 0.162 ï , ‚² Microstrip Z13 Z15 Z16 Z17 Z18 Z16 VSUPPLY Z14 0.692  0.620 Microstrip 0.045ï


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PDF AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17
2013 - N/A9M07

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 , MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 7.3 Wideband Performance (7.5 V, Pin = 0.25 , source terminal for the transistor . Figure 1. Pin Connections AFT09MS007NT1 1 Table 1. Maximum , Z14 Z7 C9 C5 Z12 C16 C14 C7 Figure 6. AFT09MS007NT1 Narrowband Test Circuit , — 0.620″ Microstrip Z13 Z14 0.055″ × 0.320″ Microstrip 0.665″ × 0.120″ Microstrip Z7


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PDF AFT09MS007N AFT09MS007NT1 N/A9M07
2014 - AFT504

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 , RF POWER LDMOS TRANSISTOR 4.9 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz , ‚´ 0.080 Microstrip Z13 Z14 Z15 Z16 0.162  0.620  0.320 Taper Microstrip 0.377  0.320 Microstrip Z12 0.062  0.620 Microstrip Z14 VSUPPLY Z11 Z10 , Power LDMOS Transistor AFT05MS004NT1 Freescale R1 33 , 1/10 W Chip Resistor


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PDF AFT05MS004N AFT05MS004NT1 AFT504
2014 - A5M0

Abstract: IC 2 5/A5M06
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 , , 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 6.0 Wideband Performance (7.5 Vdc, TA = 25C, CW , the source terminal for the transistor . Figure 1. Pin Connections  Output Stage VHF Band , ‚²  0.080 Microstrip Z1 Microstrip Z14 C15 C13 C16 Z15 0.162 ï , ‚² Microstrip Z13 Z15 Z16 Z17 Z18 Z16 VSUPPLY Z14 0.692  0.620 Microstrip 0.045ï


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PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06
2013 - RO4350B

Abstract: No abstract text available
Text: Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS , Z1 Z2 Z3 Z5 Z4 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 C20 C3 C1 Z17 , 0.271 Microstrip Z5 0.045 x 0.061 Microstrip Z14 0.025 x 0.363 Microstrip , Transistor MRFG35010ANT1 Freescale R1 51 , 1/10 W Chip Resistor RM73B1JT510J KOA Speer , Z7 Z9 Z10 C21 Z12 Z13 C17 Z14 C18 Z15 C19 Figure 9. MRFG35010ANT1 Test


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PDF MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B
2012 - ATC100B471JT200XT

Abstract: EB-38 CDR33BX104AKWY ATC100B4R3CT500XT ATC100B181JT300XT 651AT MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , 74.5 74.7 60 IMD (dBc) -30 - - - 1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR , Cycle) CW (Top View) Note: The backside of the package is the source terminal for the transistor , C1 C2 C3 C4 L1 RF INPUT Z11 Z1 C5 C6 C7 C8 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C9 DUT C10 Z12 Z13 Z14 Z15 Z16


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PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 CDR33BX104AKWY ATC100B4R3CT500XT ATC100B181JT300XT 651AT C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
2012 - ATC600F241JT

Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin GRM31CR61H106K 0806SQ-5N5GLC AFT05 GRM31CR61H106KA12
Text: ) Note: The backside of the package is the source terminal for the transistor . Figure 1. Pin , , DRAIN-SOURCE VOLTAGE (VOLTS) Note: Measured with both sides of the transistor tied together. 3.25 Vdc 3 Vdc TA , C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C17 Z10 Z11 Z12 Z13 C11 C9 L2 Z14 RF OUTPUT C3 C4 C7 C13 C14 VDS , Microstrip 0.017 × 0.082 Microstrip 0.199 × 0.082 Microstrip Z8 Z9 Z10 Z11 Z12* Z13* Z14 Description , nH Inductor 1.65 nH Inductor 2.55 nH Inductor RF Power LDMOS Transistor 62 , 1/4 W Chip Resistor


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PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin GRM31CR61H106K 0806SQ-5N5GLC AFT05 GRM31CR61H106KA12
Not Available

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications , MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR IMD (dBc) 1.8 to 30 (1) Two-Tone (10 , ) Note: The backside of the package is the source terminal for the transistor . Figure 1. Pin , Z8 Z9 Z12 Z13 Z14 Z15 Z16 C5 C7 C8 Z17 Z18 Z19 RF OUTPUT C11 Z10 C9


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PDF MRFE6VS25N MRFE6VS25NR1 25cale
transistor z14 smd

Abstract: transistor SMD t05 TRANSISTOR SMD 10p N14V smd transistor A13 smd transistor t05 TIP42 CS-8128N8 CS-8128DR8 CS-8128D8
Text: transistor typically provides a lOOmV dropout voltage at 500mA, increasing to 350mV at 3A. Quiescent current , ).10 sec. max, 260°C peak Reflow ( SMD styles only , 0V 25 250 mA Note 1: Dependent on characteristics of external transistor . Note 2: Delay Time =-— , current to PNP pass transistor or threshold voltage to FET pass transistor . Typical Performance , 1.5 2.0 buT(Amps) 2.5 3.0 3 4 5 6 7 VlN M nail ftc^uljtion (t,i i 201 >16. z14 I1 5 io. 25Â


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PDF CS-8128 CS-8128 TIP42 500mA, 350mV 500mA CS-8128N8 transistor z14 smd transistor SMD t05 TRANSISTOR SMD 10p N14V smd transistor A13 smd transistor t05 CS-8128DR8 CS-8128D8
Not Available

Abstract: No abstract text available
Text: (LOADING IN TRANSISTOR PAIRS) : R15(8), R14(8), R13(8), R12(8), Rll(8), R10(8), R9(8), R8(8), R 7 (8), R6{8 , (#P,#N): Z15(0.5,0.5), Z14 (0.5,0.5), Z13(0.5,0.5), Z12(0.5,0.5) , Z11(0.5,0.5), Z10(0.5,0.5), Z9(0.5 , , 1987 LSI Logic Corporation 3-4 8 CFCIOIOA TRUTH TABLE : S8 S4 S2 SI Z15 Z14 Z13 Z12 ZÌI ZIO 29


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PDF CFC1010A 16-bit
transistor z14 L

Abstract: transistor z9 Transistor Z14
Text: :0-8 (LOADING IN TRANSISTOR PAIRS) SI -4.5 S2 - 4 .5 S 4-4.5 S5-4.5 OUTPUT DRIVE; (DRIVE IN (*P, *N) ) Z15.-0 - (0.5,0.5) ND L SYNTAX : Z Z14 ,Z13,212,211,ZIO,Z9,Z8,27,Z6 ,Z5,Z4 ,Z3 , INFORMATION: FOLLOWING IS THE GFClOlA TRUTH TABLE. S8 S4 S2 SI Z15 Z14 Z13 Z12 ZÌI ZIO Z9 28 27 Z6 Z5


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PDF 16-BIT LL7000 LSA2000 R5R14 R13R12R11 R12R11 R15R14 R13R12 transistor z14 L transistor z9 Transistor Z14
2007 - transistor A113

Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
Text: RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for , Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain , - Source Voltage Gate- Source Voltage Total Dissipation Per Transistor @ TC = 25°C Storage Temperature , , Junction to Case, Single Transistor Symbol RJC Value 12 Unit °C/W Table 3. Moisture Sensitivity Level , Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) Gps IRL P1dB No Degradation In


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PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
2012 - atc 17-25

Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Text: ) Note: The backside of the package is the source terminal for the transistor . Figure 1. Pin , ) Note: Measured with both sides of the transistor tied together. 3.25 Vdc 3 Vdc TA = 25°C VGS = 4.25 Vdc , C5 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C17 Z10 Z11 Z12 Z13 C11 C9 L2 Z14 RF OUTPUT C3 C4 C7 C13 C14 VDS , Microstrip 0.017 × 0.082 Microstrip 0.199 × 0.082 Microstrip Z8 Z9 Z10 Z11 Z12* Z13* Z14 Description , Inductors 22 nH Inductors 17 nH Inductors 1.65 nH Inductor 2.55 nH Inductor RF Power LDMOS Transistor 3 Pin


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PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Not Available

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 , , 12.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 16 Wideband Performance (12.5 Vdc, TA = 25C, CW , package is the source terminal for the transistor . Figure 1. Pin Connections AFT09MS015NT1 1 , Z8 DUT C8 Z9 C15 Z10 C10 C17 Z11 C16 Z12 L2 Z13 C12 Z14 C13 , Z18 Z17 Z16 Z15 Z14 Z13 Z12 Z11 Z10 Microstrip 0.238  0.080ï


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PDF AFT09MS015N AFT09MS015NT1
2014 - Not Available

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 , , 12.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 16 Wideband Performance (12.5 Vdc, TA = 25C, CW , package is the source terminal for the transistor . Figure 1. Pin Connections AFT09MS015NT1 1 , Z8 DUT C8 Z9 C15 Z10 C10 C17 Z11 C16 Z12 L2 Z13 C12 Z14 C13 , Z18 Z17 Z16 Z15 Z14 Z13 Z12 Z11 Z10 Microstrip 0.238  0.080ï


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PDF AFT09MS015N AFT09MS015NT1
Not Available

Abstract: No abstract text available
Text: transistor . Figure 1. Pin Connections AFT05MS031NR1 AFT05MS031GNR1 1 Table 1. Maximum Ratings , : Measured with both sides of the transistor tied together. Figure 3. Drain Current versus Drain-Source , Z7 0.352) + 0.082) Microstrip Z14 0.315) + 0.082) Microstrip * Line length includes microstrip bends C17 C11 Z14 RF OUTPUT TYPICAL CHARACTERISTICS — 520 MHz 50 VDD = 13.6 Vdc , RF Power LDMOS Transistor AFT05MS031NR1 Freescale R1 62 , 1/4 W Chip Resistor RG2012N


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PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1
2014 - Not Available

Abstract: No abstract text available
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 , , 12.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 16 Wideband Performance (12.5 Vdc, TA = 25C, CW , package is the source terminal for the transistor . Figure 1. Pin Connections AFT09MS015NT1 1 , Z8 DUT C8 Z9 C15 Z10 C10 C17 Z11 C16 Z12 L2 Z13 C12 Z14 C13 , Z18 Z17 Z16 Z15 Z14 Z13 Z12 Z11 Z10 Microstrip 0.238  0.080ï


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PDF AFT09MS015N AFT09MS015NT1
2014 - Not Available

Abstract: No abstract text available
Text: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed , ) 1.8–600 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR D (%) 87.5-108 (1,3 , L1 Z13 L3 Z12 DUT Z15 Z14 L5 Z19 Z17 Z21 Z20 Z16 Z18 C20 , C28 + C27 Microstrip Z22, Z23 Z20, Z21 Z18, Z19 Z16, Z17 Z14 , Z15 Z12, Z13 , Power LDMOS Transistor MMRF1316NR1 Freescale R1 2.2 k, 1/8 W Chip Resistor


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PDF MMRF1316N MMRF1316NR1
GRM55DR61H106KA88B

Abstract: No abstract text available
Text: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor , RF POWER LDMOS TRANSISTOR Characterized with Series Equivalent Large-Signal Impedance Parameters , Gate 2 (Top View) Note: The backside of the package is the source terminal for the transistor , + C9 VSUPPLY + + C10 B1 C5 C7 C15 C16 C17 C18 Z14 C3 RF , ‚² x 0.050 Microstrip 0.097 x 1.170 Microstrip Z9 Z10 Z11 Z12 Z13 Z14 , Z15 PCB


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PDF MHT1000H MHT1000HR5 GRM55DR61H106KA88B
2008 - 100B102JT50XT

Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS microstrip resistor A04T-5 100B510JT500XT T491X226K035AT MRF284LR1 MRF284
Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET , Z8 C10 Z11 Z12 C9 DUT Z9 Z13 Z14 + C17 C18 L3 Z15 C11 Z16 , Microstrip 0.110 x 0.515 Microstrip 0.095 x 0.515 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB , Z14 Z15 Z16 RF OUTPUT C14 C12 C17 C3 L2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 , Microstrip 0.210 x 0.515 Microstrip C6 Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.210 x 0.515


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PDF MRF284LR1 MRF284 100B102JT50XT 100B120JT500XT 100B100JT500XT CDR33BX104AKYS microstrip resistor A04T-5 100B510JT500XT T491X226K035AT MRF284LR1 MRF284
2014 - A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Text: LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 , , 12.5 V WIDEBAND RF POWER LDMOS TRANSISTOR 16 Wideband Performance (12.5 Vdc, TA = 25C, CW , package is the source terminal for the transistor . Figure 1. Pin Connections AFT09MS015NT1 1 , Z8 DUT C8 Z9 C15 Z10 C10 C17 Z11 C16 Z12 L2 Z13 C12 Z14 C13 , Z18 Z17 Z16 Z15 Z14 Z13 Z12 Z11 Z10 Microstrip 0.238  0.080ï


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PDF AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
2006 - MRF9002NR2

Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
Text: Output Power - 2 Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Capable of Handling 10 , VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W Storage , Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per , Freescale Semiconductor LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 RF Power Field Effect Transistor Array , 37 - dBm Characteristic Functional Tests (Per Transistor in Freescale Test Fixture, 50


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PDF MRF9002NR2 MRF9002NR2 marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
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