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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

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schematic diagram 180v dc motor speed controller

Abstract: C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor
Text: YK FB_100V TV.POWER_H TV.POWER_H 2 CAUTION: DIGITAL TRANSISTOR D516 SOUND+B B , TRANSISTOR NOTE: THIS SCHEMATIC DIAGRAM IS THE LATEST AT THE TIME OF PRINTING AND SUBJECT TO CHANGE WITHOUT , F 2.7 C4030 CAUTION: DIGITAL TRANSISTOR 68 VOB COMP VCO C4047 1.8 0.01 B , 20K W894 62 CLOCK 0 1.5K R1039 4.7K 1/4W REEL-S CAUTION: DIGITAL TRANSISTOR R1080 , REC-H 53 EXT IN-L 23 RESET B 79 CAUTION: DIGITAL TRANSISTOR 5.2 CTL OUT 1 4.7K


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PDF VX-G142 OS753 GP1U281R EM-553-F9T DTC114TS CY759 EQ-552F9T schematic diagram 180v dc motor speed controller C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor
CSK6

Abstract: surge suppressor circuit transistor 13602 E67871 csk6-ylw yk diode
Text: ) 36.2 3.15 13.6±0.2 7±0.2 3.5 dia. M3.5 CSK4-Y/ YK /YL 3.5 dia. 21.8±0.2 4 dia. CSK4-YW/YKW/YLW CSK4-Y/ YK /YL 28±1 Two, M3 (or two, 3.5 dia.) 38±1 50±2 Locking mechanism* 20 , CSK6-YW/YKW/YLW CSK6-Y/ YK /YL 3.5 dia. CSK6-YW/YKW/YLW CSK6-Y/ YK /YL * Two, M3 (or two, 3.5 , circuit to prevent noise generation and to protect the Counter drive transistor . The diode surge


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PDF E67871) M022-E1-5B CSK6 surge suppressor circuit transistor 13602 E67871 csk6-ylw yk diode
ATtiny15L

Abstract: TRANSISTOR SUBSTITUTION 5 amp 48 volt battery charger
Text: pass transistor and thus greater power dissipation. Resolution and accuracy of the analog to digital , the control algorithm. Initially a P-channel MOSFET was selected for the pass transistor to avoid the , cycle to the P channel MOSFET transistor . Coefficients are constants based on the selected gain values , error by 2 Yk =(Ck/2-Ck1/2)+Yk1; // +/- 7FFF if( Yk <0) Yk =0; // no negitive output if( Yk >0x00FE) Yk , J O U R N A L page 20 Ck1=Ck; Yk1=Yk; OCR1A=(char) Yk ; PORTB&=0xEF; } // save error for


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PDF 48-volt ATtiny15L TRANSISTOR SUBSTITUTION 5 amp 48 volt battery charger
2002 - Not Available

Abstract: No abstract text available
Text: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES · ·  , crosstalk. The THAT 380G is a large-geometry, 8- transistor , monolithic NPN/PNP array intended for use in , , each transistor is electrically insulated from the others by a layer of insulating oxide (not the , produces a typical NPN Q4 C Q4 B Q4 E THAT 312 Q2 E Quad transistor arrays in DIP , Q7 PNP 17C1 18B Q2 PNP Q2 C Q8 C Q7 C Q7 B Q3 C Q3 B Q3 E GKH YK


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PDF 350MHz
2004 - Not Available

Abstract: No abstract text available
Text: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES · ·  , crosstalk. The THAT 380G is a large-geometry, 8- transistor , monolithic NPN/PNP array intended for use in , , each transistor is electrically insulated from the others by a layer of insulating oxide (not the , produces a typical NPN Q4 C Q4 B Q4 E THAT 312 Q2 E Quad transistor arrays in DIP , Q7 PNP 17C1 18B Q2 PNP Q2 C Q8 C Q7 C Q7 B Q3 C Q3 B Q3 E GKH YK


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PDF 350MHz 93biasing
478 SOCKET PINOUT

Abstract: 2N3906 PNP bipolar junction transistor pnp 8 transistor array THAT300S THAT300P THAT300 2N3904 THAT320S PNP monolithic Transistor Arrays dual 2N3904 NPN Transistor
Text: T H AT Corporation Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES , large-geometry monolithic NPN and/or PNP transistor arrays which combine low noise, high speed and excellent , . Fabricated on a Complementary Bipolar Dielectrically Isolated process, each transistor is electri- Part , Series Transistor Arrays SPECIFICATIONS 1 Maximum Ratings (T A = 25°C) Parameter Symbol , NPN Q6 NPN Q6 E Q5 B Q7 PNP Q8 PNP Q6 B 9 Q4 Q4 B GKH YK 10


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PDF THAT300 1613u 1232u 478 SOCKET PINOUT 2N3906 PNP bipolar junction transistor pnp 8 transistor array THAT300S THAT300P 2N3904 THAT320S PNP monolithic Transistor Arrays dual 2N3904 NPN Transistor
npn 8 transistor array

Abstract: "Microphone Preamplifiers" THAT380G pnp 8 transistor array
Text: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES · · · · , large-geometry, 8- transistor , monolithic NPN/PNP array intended for use in multichip modules, hybrids, and , in a dielectrically isolated, complementary bipolar process, each transistor is electrically , Q4 B Q4 E THAT 312 Q2 E Quad transistor arrays in DIP and SO packages with similar , C Q8 C Q7 C Q7 B Q3 C Q3 B Q3 E GKH YK Q1 B Q1 E Q8 E Q5 E


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PDF 350MHz 93biasing npn 8 transistor array "Microphone Preamplifiers" THAT380G pnp 8 transistor array
2002 - Not Available

Abstract: No abstract text available
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count , Marking Type name RN1110FT YK Type name RN1111FT YM 2 2002-01-24 RN2110FT


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PDF RN2110FT RN2111FT RN1110FT, RN1111FT
2002 - Not Available

Abstract: No abstract text available
Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , Type name RN2710JE YK Type name RN2711JE YM 2 2002-01-24 RN2710JE,RN2711JE


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PDF RN2710JE RN2711JE RN1710JE 1711JE
2003 - Not Available

Abstract: No abstract text available
Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , 6.11 13 V MHz pF kW Unit nA nA Type Name Marking Type name RN2910FE YK Type name


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PDF RN2910FE RN2911FE RN1910FE, RN1911FE
2000 - RN1710JE

Abstract: RN2710JE RN2711JE transistor marking YK 6 pin 1711JE
Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts , Type Name k Marking Type name RN2710JE YK Type name RN2711JE YM 2000-12-26


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PDF RN2710JE RN2711JE RN2710JE, RN1710JE 1711JE RN2710JE RN2711JE transistor marking YK 6 pin 1711JE
2002 - Not Available

Abstract: No abstract text available
Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts , ¾ R1 RN2711JE kW Marking Type name RN2710JE YK Type name RN2711JE YM


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PDF RN2710JE RN2711JE RN1710JE 1711JE
2000 - RN1910FE

Abstract: RN1911FE RN2910FE RN2911FE transistor marking YK ic marking YK
Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2910FE, RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , Cob RN2910FE R1 RN2911FE Type Name k Marking Type name RN2910FE YK


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PDF RN2910FE RN2911FE RN2910FE, RN1910FE, RN1911FE RN2910FE RN1910FE RN1911FE RN2911FE transistor marking YK ic marking YK
2002 - Not Available

Abstract: No abstract text available
Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the , MHz pF k Unit nA nA Type Name Marking Type name RN2910FE YK Type name RN2911FE


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PDF RN2910FE RN2911FE RN1910FE, RN1911FE
2000 - RN1110FT

Abstract: RN1111FT RN2110FT RN2111FT
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2110FT, RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · High-density mount is possible because of devices housed in very thin TESM packages. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts , RN2111FT Type Name k Marking Type name RN1110FT YK Type name RN1111FT YM


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PDF RN2110FT RN2111FT RN2110FT, RN1110FT, RN1111FT RN2110FT RN1110FT RN1110FT RN1111FT RN2111FT
2002 - Not Available

Abstract: No abstract text available
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · High-density mount is possible because of devices housed in very thin TESM packages. · Incorporating a bias resistor into a transistor reduces parts count , ¾ R1 RN2111FT kW Marking Type name RN1110FT YK Type name RN1111FT YM 2


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PDF RN2110FT RN2111FT RN1110FT, RN1111FT
2004 - RN2110FT

Abstract: toshiba Transistor Silicon pct TOSHIBA Transistor Silicon PNP Epitaxial Type RN1110FT RN1111FT RN2111FT transistor marking YK
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm · High-density mount is possible because of devices housed in very thin TESM packages. · Incorporating a bias resistor into a transistor reduces parts count , Type Name Marking Type name RN2110FT YK Type name RN2111FT YM 5 2004-03-01


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PDF RN2110FT RN2111FT RN1110FT, RN1111FT toshiba Transistor Silicon pct TOSHIBA Transistor Silicon PNP Epitaxial Type RN1110FT RN1111FT RN2111FT transistor marking YK
2004 - RN1910FE

Abstract: RN1911FE RN2910FE RN2911FE marking YK 6-pin transistor marking YK 6 pin
Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor ) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. · Incorporating a bias resistor into a transistor reduces parts count. · Reducing the parts , RN2910FE,RN2911FE Type Name Marking Type name RN2910FE YK Type name RN2911FE YM


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PDF RN2910FE RN2911FE RN1910FE, RN1911FE RN1910FE RN1911FE RN2911FE marking YK 6-pin transistor marking YK 6 pin
2004 - Not Available

Abstract: No abstract text available
Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count , Marking Type name RN2910FE YK Type name RN2911FE YM 5 2004-03-01 RN2910FE


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PDF RN2910FE RN2911FE RN1910FE, RN1911FE
2007 - ic marking YK

Abstract: No abstract text available
Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor ) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications · Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. · Incorporating a bias resistor into a transistor reduces parts count. · Reducing the parts count enables the , Marking Type name RN2910FE YK Type name RN2911FE YM 5 2007-11-01 RN2910FE


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PDF RN2910FE RN2911FE RN1910FE, RN1911FE ic marking YK
2007 - transistor marking YK 6 pin

Abstract: No abstract text available
Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor ) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. · Incorporating a bias resistor into a transistor reduces parts count. · Reducing the parts count , ,RN2711JE Type Name Marking Type name RN2710JE YK Type name RN2711JE YM 5


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PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE transistor marking YK 6 pin
2007 - Not Available

Abstract: No abstract text available
Text: RN2110FT,RN2111FT TOSHIBA Transistor RN2110FT,RN2111FT Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications · · High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count , 2007-11-01 RN2110FT,RN2111FT Type Name Marking Type name RN2110FT YK Type name


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PDF RN2110FT RN2111FT RN1110FT, RN1111FT
2004 - RN1710JE

Abstract: RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin
Text: RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor ) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. · Incorporating a bias resistor into a transistor reduces parts count. · Reducing the parts , name RN2710JE YK Type name RN2711JE YM 5 2004-07-01 RN2710JE, RN2711JE


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PDF RN2710JE, RN2711JE RN1710JE, RN1711JE RN1710JE RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin
2004 - Not Available

Abstract: No abstract text available
Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin) • Unit: mm Incorporating a bias resistor into a transistor reduces parts count. package. Reducing , name RN2710JE YK Type name RN2711JE YM 5 2004-03-01 RN2710JE,RN2711JE


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PDF RN2710JE RN2711JE RN1710JE, RN1711JE
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR RN2310,RN2311 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS · · · · With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Complementary to RN1310, RN1311 PC R1 òE EQUIVALENT CIRCUIT M A X IM U M RATINGS (Ta = 25 , 07-23 3/4 TOSHIBA RN2310,RN2311 TYPE NAME RN2310 MARKING Type Name r -^ -1 YK td td


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PDF RN2310 RN2311 RN2310, RN1310, RN1311 RN2310
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