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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC2190IUKG#PBF Linear Technology LTC2190 - 16-Bit, 25Msps Low Power Dual ADCs; Package: QFN; Pins: 52; Temperature Range: -40°C to 85°C
LTC2190IUKG#TRPBF Linear Technology LTC2190 - 16-Bit, 25Msps Low Power Dual ADCs; Package: QFN; Pins: 52; Temperature Range: -40°C to 85°C
LTC2190CUKG#PBF Linear Technology LTC2190 - 16-Bit, 25Msps Low Power Dual ADCs; Package: QFN; Pins: 52; Temperature Range: 0°C to 70°C
LTC2190CUKG#TRPBF Linear Technology LTC2190 - 16-Bit, 25Msps Low Power Dual ADCs; Package: QFN; Pins: 52; Temperature Range: 0°C to 70°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor tt 2190 em Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor t 2190

Abstract: intel 2114 SmartDie 28F010
Text: notch. Figure 1. 28F010 1024K (128K x 8) Flash M em ory Die/Bond Pad Layout 3 28F010 1024K (128K x 8) FLASH M EMORY 1.1 Pad D escription Table 1. 28F010 1024K (128K x 8) Flash M em ory , 79.0 84.0 87.4 87.4 Y 2138 2138 2219 2219 2219 2219 2219 2204 2007 -1983 -2109 -2144 -2144 - 2190 - 2190 - 2190 - 2190 - 2190 - 2190 - 2190 - 2190 - 2190 - 2190 -2114 -2076 -1983 2007 2133 2219 2219 vcc Vpp , die adheres to the gel m em brane in the GEL-PAK, elim inating the risk of damage to the active die


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PDF 28F010 1024K X2BF010-90 ER-20 ER-24, RR-60, AP-316, AP-325, USA/DP-019/694 transistor t 2190 intel 2114 SmartDie
Transistor TT 2140

Abstract: transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200
Text: 450 48 2040 2050 2060 800 60 900 64 2070 2080 2090 2110 2120 2130 2140 2150 2160 2170 2180 2190 1 , information about the coefficient value, contact our sales office for technical support. TT L, C M O S TT L, C , OPERATING CONDITIONS Condition Symbol V ddi R em ark 1.5 V 3 V (V d d i = 1.5 V ) 3 V 5 V (V d d i = 3 , tX P : P channel MOS transistor N : N channel MOS transistor A l, A2 : Inverter P1,P2 : P channel MOS transistor N I, N2 : N channel MOS transistor A l, A2 : Inverter · Resistor R esistance


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PDF SSC2000 WU01- Transistor TT 2140 transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200
Not Available

Abstract: No abstract text available
Text: That P A C KLAER D HEW TT WL'EM High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low , HBFP-0450 is a high perform ance isolated collector silicon bipolar junction transistor housed in a , T, T sto Units Em itter-Base Voltage Collector-Base Voltage C ollector-Em itter Voltage C , Voltage IcBO Collector-Cutoff C urrent I ebo Em itter-B ase C utoff C urrent hFE DC C


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PDF HBFP-0450 SC-70 OT-343)
date code marking NEC TRANSISTOR

Abstract: No abstract text available
Text: TYP. 5 Forward Voltage Reverse Current Diode MIN. Transistor Collector to Em itter , Em itter Voltage VcEO 80 V Em itter to C ollector Voltage V eco 6 V Ic 50 , +150 °C Transistor Collector Current Power Dissipation Derating Power Dissipation , TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE £ o CL c o al 0 5 o CL 25 Am , jd "o O Forward Voltage V f (V) Collector to Em itter Voltage V ce (V) COLLECTOR


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PDF PS2801 PS2801-1 PS2801-4 16-pin E72422 VDE0884 date code marking NEC TRANSISTOR
Not Available

Abstract: No abstract text available
Text: What HEWLETT 1 "KM PACK ARD General Purpose, Low Current NPN Silicon Bipolar Transistor , lett-Packard’s AT41532 is a general purpose NPN bipolar transistor that has been optimized for m axim um ft , -41532 Absolute Maximum Ratings Sym bol P aram eter U nits A b solute M axim um 111 Vebo Em , €ž ^assoc AT-41532 Typical Noise Parameters, Common Em itter, ZQ = 50 £1, VCE = 1 V, Ic = 1 mA r opt , R„ 'Jassoc AT-32032 Typical Noise Parameters, Common Em itter, ZQ = 50 Q., VCE = 2.7 V, Ic =


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PDF AT-41532 OT-323 SC-70 OT-323) 5965-6167E
Not Available

Abstract: No abstract text available
Text: gain transistor below this fre­ quency. Typical applications include narrow and m oderate band IF , perature Storage T em perature Thermal R esistance1 41: 2 80 mA 750 mW +13 dBm 200°C -65°C to , 24.9 23.4 20.1 17.6 15.6 13.8 12.2 10.8 8.4 6.2 42.04 37.54 28.49 21.90 17.48 14.85


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PDF MSA-0870 MSA-0870 5965-9544E 5968-0528E
2n6673

Abstract: 2n6671 RCA8767
Text: 3 0 5 57 1 0 0 4 0 b l 0 33S 1 -3 3 -3 1 IHAS C O LLECTO R-TO - EM ITTER VOLTAGE(VCE> - V , Maxim um operating areas for a ll types (Tc=100°C). 10 ~ ~ "100 CO LLECTO R-TO - EM ITTER VOLTAGE (Vr , 2-190 HARRIS SEMICOND SECTOR SbE » 4302271 0040bl3 044 H H A S 2N6671, 2N6672, 2N6673 , fiF 04,05, 0 6 , 0 7 * C A 3 7 2 5 QUAD TRANSISTOR ARRAY * T H I S CONNECTION SHOULD BE MADE AS CLOSE AS POSSIBLE TO COLLECTOR OF TRANSISTOR UNDER TEST * * K E L V IN (SENSING) CONNECTIONS BATTERY


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PDF 2N6671, 2N6672, 2N6673 T0-204AA T0-204AA 2N6673* 2n6671 RCA8767
Not Available

Abstract: No abstract text available
Text: Collector - Em i tt er Breakdow n Vo ltag e V (BR)CEO 100 115 V I C=10m A* Em i t t , =7V Collect or Em it t er Cu t -Of f Cu rr en t I CES 100 nA V CES=80V Collector - Em i tt er , “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 , Collect or -Base Volt age V CBO 120 V Col l ector - Em i tter Vol tage V CEO 100 V Em i t t er-Base Vol tage V EBO 12 V Peak Pulse Cu rr ent I CM 5 A Conti nuo


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PDF FMMT634 625mW FMMT734 100mA 100us
NFM61 SP

Abstract: tekelec TA 355 TEKELEC te 358
Text: specification UHF power transistor FEATURES · Em itter ballasting resistors fo r optim um tem perature , Nov 19 2 Philips S em iconductors P relim inary specification UHF power transistor , specification UHF power transistor BLV2045N 1998 Nov 19 4 Philips S em iconductors P relim , S em iconductors P relim inary specification UHF power transistor BLV2045N List of , P relim inary specification UHF power transistor BLV2045N 1998 Nov 19 7 Philips S em


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PDF BLV2045N BLV2045N OT39QA SCA60 /printrun/ed/pp10 NFM61 SP tekelec TA 355 TEKELEC te 358
NEC 2703

Abstract: 1P TRANSISTOR MARK 2806-4-F marking 1.P
Text: Forward C u rre n t1 Transistor Collector to Em itter Voltage Em itter to C ollector Voltage Collector Current Power Dissipation Derating Power Dissipation Isolation V oltage^ Operating A m bient T em perature , TRANSISTOR TYPE SOP PHOTOCOUPLER DESCRIPTION T h e PS2806-1 and P S 2 806 -4 are o p tically cou ple d iso la to rs con tain ing G aA s light em itting dio d e s and an NPN silicon darlington co n n e cte , Collector to Em itter Dark Current Current T ransfer Ratio (Ic/I f) CTR R atio'1 Collector Saturation


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PDF PS2806-1 PS2806-4 PS2806-1 NEC 2703 1P TRANSISTOR MARK 2806-4-F marking 1.P
ITT DIODE

Abstract: transistor ITT DIODE ITT pnp low power fast switching transistor Solitron Transistor
Text: CONTACT EM ITT ER CONTACT - EM ITTER i- B A S E The epitaxial planar transistor construction , PLA N A R POWER TRANSISTO R Contran De/ices. Inc. BASE CONTACT - ! EM ITT ER CONTACT \ EM , . C-28 C o n tr a n Devices, Inc. M©[D)y©IF ©Æ\ TT £\[L©( T Y P IC A L SO L IT R O N C H , reliability and ruggedness are integral parts of the design. EPITAXIAL PLA N A R DARLINGTON TRANSISTOR E LEC T R CAL INTERCONNECTION EM ITTER CONTACT Solitron's epitaxial planar Darlington


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PDF
Not Available

Abstract: No abstract text available
Text: Forward C u rre n t1 Transistor C ollector to Em itter Voltage Em itter to C ollector Voltage C ollector , con tain ing a G aA s light em ittin g d iod e and an NPN silicon p h o to tra n sisto r in a p la , ) H igh-sp ee d sw itch ing (tr = 3 ¿is T Y P ., tt = 5 U L ap pro ved: File No. E 72422 (S) V D E 0 8 , VIEW 1 6 1 5 1 4 1 3 1 2 1 1 10 9 n n n n n n n n U U U u // 1. 2. 3. 4. Anode Cathode Em itter Collector // // M O TOP VIEW 4 3 tr tt tt n LI LI LI LI LI LI n LI LI 1 2 3 4 5 6 7 8 1. 3


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PDF PS2801 PS2801-1
low power rf transistor T

Abstract: No abstract text available
Text: Transistor 2 3. Collector Transistor 2 4. Em itter Transistor 2 5. Em itter Transistor 1 6. Base Transistor 1 , NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 , dB TYP at 2 GHz EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE tT 2.0 ± 0.2 1.3 0.65 1 , encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config ured for either dual transistor or cascode operation. The high ft, low voltage bias and small size make


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PDF NE680 UPA811T UPA811T UPA811T-T1 24-Hour low power rf transistor T
2SC4813

Abstract: VDF pn C40r
Text: y—^•v — s vU=i> /\°7- Silicon Power Transistor 2SC4813 N PN X e £ ^ y TM& y y ZI > h -7 > V 7s $ iSSJtX'f 2SC4813 li, h y V^X^TlÈVcEisaoT'hFE^v.cOT-DC/DCrj ^•-nr^fax-^ LTHilTto «F Ît o®VCE(sat)o VCE(sat)^0.3 V @IC=3.0A, IB=30mA o^hFEc hFE =450 — 2000 @ VCE =2.0 V, IC , €” 50 mA 0.55 V ^ - X tt , ffl ^ BE VßE(sat) * Ic = 5.0 A, IB = 50 m A 1.2 V fi] ^ m is m fT VCE = , )243-6060 B M (0857)27-5313 ± ffl (0276)46-4014 (052)222-2170, 2190 H RI (092)261 -2806 C01.7


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PDF 2SC4813 2SC4813 D15603JJ2V0DS00 TC-7819) VDF pn C40r
Not Available

Abstract: No abstract text available
Text: C OLLBCftO P. C LKW EM t B A B S EM TT TH ft S A T U « A T ( O N V O L t o & £ l t C Q L V & ? r * £ , NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector-Base Voltage C , ollector Base Breakdow n Voltage C ollector Em itter Breakdow n Voltage Em itter-Base Breakdow n Voltage C ollector C utoff Current Em itter Cutoff C urrent DC Current Gain C ollector Em itter Saturation Voltage Base Em itter Saturation Voltage O utput Capacitance Input Capacitance Current G ain Bandw idth Product


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PDF KSC5338
Not Available

Abstract: No abstract text available
Text: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER G cE =23dB C re = 4 . 0 p F , Em itter Voltage Em itter Base Voltage C ollector C urrent Base C urrent C ollector Dissipation , ut-off C urrent Em itter C ut-off C urrent DC C urrent Gain C urrent G ain-Bandw idth Product R everse T , 4 0 U ir iilr tg h FE HAO B X " 3 " -l> Tt flHADE. FAIRCHILD S E M IC O N D U C T , TRANSISTOR c iiH P E W T ùA lhJ tlM R C K irirns B*fWWlPTH PHOWKT B O 1.« id Ù .1 .13$ I


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PDF KSC3123
cd 0765 rt

Abstract: IC 7440 SG 5010 08/bup 3110 transistor
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALLPACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 , transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config ured for either dual transistor or cascode operation. The high It , low voltage bias and , rT ra n sisto r2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on , CONDITIONS Collector Cutoff Current at Vcb = 5 V, Ie = 0 Em itter C utoff Current at V eb = 1 V, Ic = 0


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PDF NE687 UPA808T UPA808T 24-Hour cd 0765 rt IC 7440 SG 5010 08/bup 3110 transistor
Not Available

Abstract: No abstract text available
Text: KSD5080 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION , E m itter Voltage Em itter Base Voltage C ollector C urrent (DC) C ollector C urrent (Pulse) C , .Base 2.C olle cto r 3 . Em itter ELECTRICAL CHARACTERISTICS C h a ra c te ris tic C ollector C utoff C urrent (V BE=0) C ollector C utoff Current E m itter Cutoff C urrent DC Current Gain C ollector Em itter Saturation Voltage Base Em itter Saturation Voltage D am per Diode Turn On Voltage Fall T im e


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PDF KSD5080
Not Available

Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE , . SU S© * J v m C y C lrllillr MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING , Collector-base voltage Em itter-base voltage Collector current Collector reverse current Collector dissipation , perature isolation voltage CTj=25*C. unless otherwise noted) Conditions |C=1 A, V£B= 2V VEb= 2V Em , Collector cutoff current Collector cutoff current Em itter cutoff current Collector-em itter salutation


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PDF QM200HC-M VCO200V
Not Available

Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR BCX69 ISSUE 2 – FEBRUARY 1995 % , Collector-Em itter Voltage V CEO -20 V Em i t t er-Base Vol tag e V EBO -5 V Peak Pulse , -25 V IC =-100µA Collector - Em itter Breakdow n Vo ltag e V (BR)CEO -20 V IC =-10m A Em i t t er-Base Breakdow n Vo ltag e V (BR)EBO -5 V I E =-100µA Collector Cu t-Of f Cur rent I CBO µA µA V CB =-25V V CB =-25V, T am b =150°C Em it t er Cu t


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PDF BCX69 BCX68 BCX69-16 BCX69-25 -100m -500m
Not Available

Abstract: No abstract text available
Text: VB E (on) It Rev. B FAIRCHILD S E M IC O N D U C T O R >31999 Fairchild S em iconductor Corporation tm KSH42/42C PNP EPITAXIAL SILICON TRANSISTOR B A S E EM ITTER SATU RATIO N VO LTAGE C , KSH42/42C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING , 1. B a s e 2. C o lle c to r 3. Em itter Rating -100 -100 -5 -6 -10 -2 20 1.75 150 -65 ~ 150 Unit V V V A A A W W °C °C 1. B a s e 2. C o lle c to r 3. Em itter 1 " l-PAK Ib Pc Pc Tj T


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PDF KSH42/42C TIP42 TIP42C
741 LEM

Abstract: AM/amplifier LEM 741
Text: specification UHF power transistor FEATURES · Em itter ballasting resistors fo r optim um tem perature , A p r 23 2 Philips S em iconductors P relim inary specification UHF power transistor , UHF power transistor BLV2045N 1 999 A p r 23 4 Philips S em iconductors P relim inary , specification UHF power transistor BLV2045N 1 999 A p r 23 7 Philips S em iconductors P relim , p r 23 8 Philips S em iconductors P relim inary specification UHF power transistor


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PDF BLV2045N BLV2045N OT39QA SCA63 741 LEM AM/amplifier LEM 741
transistor SE 431

Abstract: QM150DY-2H transistor 431 N QM15
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY , mm MITSUBISHI ELECTRIC 2 - 429 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH , cu rre n t (fo rw a rd d io d e c u 're n tt J u n c tio n te rr.p e ra tire S torage te m p e ra tu , if cl R Rih ! TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EM ITTER OUTPUT


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PDF QM150DY-2HK E80276 E80271 transistor SE 431 QM150DY-2H transistor 431 N QM15
Not Available

Abstract: No abstract text available
Text: transistor D ISC R ETE SEM ICO N D U CTO R S FEATU RES APPLICATIO N D ESCRIPTIO N • Interdigitated structure; high em itter efficiency. • Diffused em itter ballasting resistors providing , 960 to 1215 M Hz for TACAN application. NPN sificon planar epitaxial m icrowave power transistor , application. Transistor has a FO -57C metal ceram ic flange package, with base connected to flange. It is , regulations applying at the location of the user, tt m ust never be thrown o u t w ith the general industrial


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PDF MZ0912B100Y
ps2501-3

Abstract: No abstract text available
Text: . `-.'Jr.- PS2501 -1 ,-2 ,-3 ,-4 PS2501L-1, -2, -3, -4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR , silicon photo transistor . PS2501-1, -2, -3, -4 are in a plastic DIP (Dual In-line Package) and PS2501L , Dissipation Peak Forward Current (PW = 100 ms, Duty Cycle 1 %) Transistor Collector to Emitter Voltage Emitter , T IC Forward Voltage Diode Reverse Current Junction Capacitance ! 1 Transistor Collector to Emitter , , u trtr 1. 2. 3. 4. 4 3 PS2501-3 \e> 0 M A V nnnnn? \A n tt ají u r-1 g i 2 1


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PDF b427525 PS2501 PS2501L-1, PS2501-1, PS2501-1 PS2501-3 PS2501-2 ps2501-3
Supplyframe Tracking Pixel