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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor tip 31a equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal , either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Harris Semiconductor High-Reliability Marketing group for any desired , QGS QGD VSD TT R8jc Rflja ID = 31 A, VGD = 0 I = 31A ; di/dt = 100A/jis Free Air Operation VDD = 100V, ID = 31A IGS1 - IGS2 0 < Vgs < 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = +20V


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PDF FRE260D, FRE260R, E260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD
texas instruments tip32

Abstract: tip 31c til 31a texas instruments tip31 TIP31C
Text: Collector-Emitter TE S T C O N D IT IO N S TIP31 M IN MAX T IP 31A M IN MAX TIP31B M IN MAX TIP 31C M IN MAX U N IT , based on th e c a p a b ility o f th e transistor to o perate safely in th e c irc u it o f Figure 2 . L , values show n are n om inal; exact values vary slightly w ith transistor param eters. 1 270 5.328 , equivalent . In p u t pulse w id th is increased u n til I c m = 1 .8 A . F IG U R E 2 T e x a s I NICn


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PDF TIP31, TIP31A, TIP31B. TIP31C TIP32, TIP32A, TIP32B, TIP32C texas instruments tip32 tip 31c til 31a texas instruments tip31
Not Available

Abstract: No abstract text available
Text: Power MOSFETs Package • 31A , 200V, RDS(on) > 0.080Q TO-258 • Second Generation Rad Hard , MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS , ), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S19500 , |is Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 31A 2.60 V Drain-Source On , VDD = 100V, ID = 31A Pulse Width = 3jis Period = 300ns Rg = 10 Q 0 £ VGS £ 10 (See Test Circuit


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PDF 2N7302D, 2N7302R FRE260 O-258 100KRAD 300KRAD 1000KRAD 3000KRAD O-258AA
IRF 940 TRANSISTOR

Abstract: irf 940 ir igbt 035H IRG4PC40SPbF
Text: PD -95171 IRG4PC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C , = 31A E n-channel Benefits · Generation 4 IGBT's offer highest efficiency available · , equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES , 1.0mA VGE = 15V 1.5 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250 VGE = 0V, VCE =


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PDF IRG4PC40SPbF O-247AC O-247AC IRF 940 TRANSISTOR irf 940 ir igbt 035H IRG4PC40SPbF
Not Available

Abstract: No abstract text available
Text: MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS , ), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S , 10V, ID = 31A - 2.60 V Drain-Source On Resistance RDS(on) VGS = 10V, ID = 19A - 0.080 a VDD = 100V, ID = 31A Pulse Width - 3ns Period = 300ns Rg = 10 ii 0 < VGS < 1 0 (See , 31A IGS1 IGS2 0 < Vgs < 20 ns ns Gate-Charge Total QGM Plateau Voltage VGP


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PDF FRE260D, FRE260R, FRE260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD O-258AA
1993 - 1E14

Abstract: 2E12 2N7302D 2N7302H 2N7302R 2N7302
Text: Package · 31A , 200V, RDS(on) = 0.080 TO-258 · Second Generation Rad Hard MOSFET Results From New , effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to , screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S19500. Contact the Harris Semiconductor High-Reliability Marketing group , Rated Avalanche Current IAR Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 31A -


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PDF FRE260 2N7302D, 2N7302R 2N7302H O-258 100KRAD 300KRAD 1000KRAD 3000KRAD O-258AA 1E14 2E12 2N7302D 2N7302H 2N7302R 2N7302
Not Available

Abstract: No abstract text available
Text: , NEW JERSEY 07081 U.S.A. IRG4PC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR , 31A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent , 1.0mA IC = 31A lc = 60A lc = 31A ,Tj = 150°C VCE=V GE , IC = 250MA VGE = 15V See Fig. 2, 5 mV/°C VCE = VGE, lc = 250uA s V CE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V MA 2.0 VGE = 0V, VCE


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PDF IRG4PC40S O-247AC O-247AC
2001 - star delta plc

Abstract: delta plc 1E14 2E12 FRE260D FRE260H FRE260R Rad Hard in Fairchild for MOSFET 214 fairchild transistor
Text: FRE260D, FRE260R, FRE260H 31A , 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package · 31A , 200V, RDS(on) = 0.080 TO-258AA · Second Generation Rad Hard MOSFET , . Symbol This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical , either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations


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PDF FRE260D, FRE260R, FRE260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD star delta plc delta plc 1E14 2E12 FRE260D FRE260H FRE260R Rad Hard in Fairchild for MOSFET 214 fairchild transistor
Not Available

Abstract: No abstract text available
Text: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features , @VGE = 15V, IC = 31A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency , replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings , 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA 1.5 IC = 31A VGE = 15V — IC = 60A See Fig.2, 5 V — IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC


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PDF 5175A IRG4BC40SPbF O-220AB O-220AB
2010 - Irg4bc40spbf

Abstract: No abstract text available
Text: PD - 95175A IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features , = 31A E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent , IC = 31A IC = 60A See Fig.2, 5 V IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 31A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE =


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PDF 5175A IRG4BC40SPbF O-220AB O-220AB 4BC40SPbF Irg4bc40spbf
1999 - 1E14

Abstract: 2E12 FRE260D FRE260H FRE260R
Text: FRE260D, FRE260R, FRE260H 31A , 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package · 31A , 200V, RDS(on) = 0.080 TO-258AA · Second Generation Rad Hard MOSFET , This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS , non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent , Avalanche Current IAR Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 31A - 2.60 V


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PDF FRE260D, FRE260R, FRE260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRE260D FRE260H FRE260R
DMN3150L

Abstract: DMN3150L-7
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT · · · · · · · · Mechanical Data · · Low On-Resistance: RDS(ON) < 85m @ VGS = 4.5V, ID = 3.6A RDS(ON) < 115m @ VGS = 2.5V, ID = 3.1A Low Gate Threshold Voltage Low Input Capacitance Fast , -23 Gate Source TOP VIEW Maximum Ratings EQUIVALENT CIRCUIT @TA = 25°C unless otherwise , VDS = VGS, ID = 250A VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.1A VGS = 0V, IS


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PDF DMN3150L AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS31126 DMN3150L DMN3150L-7
2007 - marking 31A sot-23

Abstract: No abstract text available
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features · Low On-Resistance: RDS(ON) < 85m @ VGS = 4.5V, ID = 3.1A RDS(ON) < 115m @ VGS = 3.0V, ID = 2.5A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low , (approximate) Drain NEW PRODUCT · · · · · · Gate Source TOP VIEW EQUIVALENT CIRCUIT Maximum , 250A VGS = 4.5V, ID = 3.1A VGS = 3.0V, ID = 2.5A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A VGS(th) RDS


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PDF DMN3150L OT-23 OT-23 J-STD-020C MIL-STD-202, DS31126 marking 31A sot-23
2008 - marking 31A sot-23

Abstract: No abstract text available
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features · Low On-Resistance: RDS(ON) < 85m @ VGS = 4.5V, ID = 3.6A RDS(ON) < 115m @ VGS = 2.5V, ID = 3.1A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low , G Source S TOP VIEW Pin Configuration EQUIVALENT CIRCUIT Maximum Ratings Drain Source , , VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.1A VGS = 0V


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PDF DMN3150L AEC-Q101 OT-23 OT-23 J-STD-020D MIL-STD-202, DS31126 marking 31A sot-23
2007 - Not Available

Abstract: No abstract text available
Text: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • â , „¦ @ VGS = 2.5V, ID = 3.1A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed , €¢ Drain SOT-23 Gate Source TOP VIEW Maximum Ratings EQUIVALENT CIRCUIT @TA = 25 , ¼A VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A VDS = 5V


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PDF DMN3150L AEC-Q101 OT-23 J-STD-020C DS31126
2014 - Not Available

Abstract: No abstract text available
Text:  AUIRG4PC40S-E AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor C  VCES = , € ï‚·ï€ ï‚·ï€ VCE(ON) typ. = 1.32V G @ VGE = 15V, IC = 31A E n-channel  C , 's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent , 1.5 IC = 31A , VGE = 15V, TJ = 25°C — V  IC = 60A, VGE = 15V, See Fig. 2,5 — IC = 31A , VGE , = 100V, IC = 31A 250 VGE = 0V, VCE = 600V 2.0 µA  VGE = 0V, VCE = 10V,TJ = 25°C 1000 VGE =


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PDF AUIRG4PC40S-E O-247AD
Not Available

Abstract: No abstract text available
Text: PD - 95175 IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C , = 31A E n-channel Benefits · Generation 4 IGBTs offer highest efficiency available · , equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES , /°C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250


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PDF IRG4BC40SPbF O-220AB O-220AB
2004 - Not Available

Abstract: No abstract text available
Text: PD - 95175 IRG4BC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C , = 31A E n-channel Benefits · Generation 4 IGBTs offer highest efficiency available · , equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES , /°C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250


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PDF IRG4BC40SPbF O-220AB O-220AB
1996 - IRG4BC40S

Abstract: TO-220AB IRG4BC40S
Text: Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C · Standard: Optimized for , -220AB package VCES = 600V VCE(on) typ. = 1.32V G @V GE = 15V, IC = 31A E n-chan nel Benefits · , conditions · Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT , 0V, IC = 1.0mA VGE = 15V 1.6 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250 VGE = 0V


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PDF IRG4BC40S O-220AB O-220AB IRG4BC40S TO-220AB IRG4BC40S
Not Available

Abstract: No abstract text available
Text: GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum , cE S = 6 0 0 V VcE(on) typ. = 1 -3 2 V @ V ge= 15V , lc = 31A Benefits 1Generation 4 IGBT , to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute , €” 1000 nA I ±100 — C o n d it io n s lc = 250pA lc = 1.0A V qe = 0V, lc = 1.0mA lc = 31A le = 60A lc = 31A ,Tj=150°C V ge = 0 V, V qe = 0 V, V qe = 15V See Fig.2,5 VCE = VGE


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PDF O-247AC
1996 - IRG4PC40S

Abstract: No abstract text available
Text: Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C · Standard: Optimized for minimum , VCES = 600V VCE(on) typ. = 1.32V G @V GE = 15V, IC = 31A E n-chan nel Benefits · , conditions · Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT , 0V, IC = 1.0mA VGE = 15V 1.6 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250 VGE = 0V


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PDF IRG4PC40S O-247AC O-247AC IRG4PC40S
Not Available

Abstract: No abstract text available
Text: . This also adds up to excellent cost performance. Incorporates a sensitivity adjuster (Excluding EX- 31â , . (Note) Sensing range EX- 31A Thru-beam SENSOR OPTIONS OPERABILITY 500 mm 19.685 in EX-31B EX- 31A -PN EX-31B-PN With operation mode switch PARTICULAR USE SENSORS No , 800 mm 31.496 in Light-ON PNP open-collector transistor Light-ON EX-33 EX-33-PN PNP open-collector transistor EX-32B EX-32A-PN EX-32B-PN Output operation NPN open-collector transistor


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PDF EX-30 EX-33 EX-31â RX-LS200 RT-610
1997 - IRG4BC40S

Abstract: No abstract text available
Text: TRANSISTOR Features C · Standard: Optimized for minimum saturation voltage and low operating , @V GE = 15V, IC = 31A E n-chan nel Benefits · Generation 4 IGBT's offer highest efficiency , for equivalent industry-standard Generation 3 IR IGBT's TO-220AB Absolute Maximum Ratings , /°C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250


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PDF IRG4BC40S O-220AB O-220AB IRG4BC40S
IRG4PC40S

Abstract: No abstract text available
Text: IGBT INSULATED GATE BIPOLAR TRANSISTOR · Standard: Optimized for minimum saturation voltage and , replacement for equivalent industry-standard Generation 3 IR IGBT's A TO-247AC Absolute Maximum , ov, lc = 1.0A VGE = 0V ,lc= 1.0mA lc = 31A le = 60A lc = 31A ,T.i=150°C Vce = Vge, Ic = 250gA Vce = Vge, fc = 250pA VCe = 100V, lc = 31A V qe = 0V, V ce = 600V VGE = 0V, Vce = 10V, T j = 25°C Vge , - 21 - 1000 - 940 12 - 13 - - 2200 140 - 26 [ Max. Unitsl C o n d itio n s 150 ! lc = 31A


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PDF IRG4PC40S O-247AC O-247AC IRG4PC40S
1997 - IRG4PC40S

Abstract: No abstract text available
Text: TRANSISTOR Features C · Standard: Optimized for minimum saturation voltage and low operating , @V GE = 15V, IC = 31A E n-chan nel Benefits · Generation 4 IGBT's offer highest efficiency , for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings , /°C VGE = 0V, IC = 1.0mA VGE = 15V 1.5 IC = 31A - IC = 60A See Fig.2, 5 V - IC = 31A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA - mV/°C VCE = VGE, IC = 250µA - S VCE = 100V, IC = 31A 250


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PDF IRG4PC40S O-247AC O-247AC IRG4PC40S
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