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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3570EUF#TRPBF Linear Technology LT3570 - 1.5A Buck Converter, 1.5A Boost Converter and LDO Controller; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LT3570IUF#PBF Linear Technology LT3570 - 1.5A Buck Converter, 1.5A Boost Converter and LDO Controller; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LT3570IUF#TRPBF Linear Technology LT3570 - 1.5A Buck Converter, 1.5A Boost Converter and LDO Controller; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LT3570EFE#PBF Linear Technology LT3570 - 1.5A Buck Converter, 1.5A Boost Converter and LDO Controller; Package: TSSOP; Pins: 20; Temperature Range: -40°C to 85°C
LT3570IFE#PBF Linear Technology LT3570 - 1.5A Buck Converter, 1.5A Boost Converter and LDO Controller; Package: TSSOP; Pins: 20; Temperature Range: -40°C to 85°C
LT3570EFE#TRPBF Linear Technology LT3570 - 1.5A Buck Converter, 1.5A Boost Converter and LDO Controller; Package: TSSOP; Pins: 20; Temperature Range: -40°C to 85°C

transistor t4 3570 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
T4 3570

Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N3900 2N2713 960L to 98 2N2712 2N2714
Text: : 2N3843A NPN 30 20-40 2mA, 5 0.2 10mA, 1mA 150 2 360 2 N3844 NPN 30 35-70 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3844A NPN 30 35-70 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3845 NPN 25 60-120 . 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3845A NPN 25 60-1 20 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3854 NPN 36 35-70 1 iliSSiäBÄSil 2mA, 5 0.2 10mA, 1mA 200 1.7 360 2N3854A NPN 36 35-70 2mA, 5 0.2 10mA, 1mA 200 1.7 360 2N3855 NPN 36 60-120 . , 1 VS If 2,2N3393, • 5V T4«2S VC 310 TRANSISTOR NOISE ANALYZED


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PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 T4 3570 transistor t4 3570 transistor 2n2712 2N3900 960L to 98 2N2712
2008 - MMSD914LT1

Abstract: D03314-222 kemet ceramic esr 1nF d03314 r2c sot-23 r1c 472 diode LT3570FE D03314103 LT3570
Text: n n n n n n n The LT® 3570 is a buck and boost converter with internal power switches and , . The LDO controller is capable of delivering up to 10mA of base current to an external NPN transistor , VOUT3 2.5V 100mA 2.2F 70 0 0.2 0.4 0.6 IOUT2 (A) 0.8 1.0 3570 TA01b 10.2k 15.8k 3570 TA01a 3570fb 1 LT3570 ABSOLUTE MAXIMUM RATINGS (Note 1) VIN1, VIN2, VIN3 , 3570 24-Lead (4mm × 4mm) Plastic QFN ­40°C to 125°C LT3570IUF#PBF LT3570IUF#TRPBF 3570


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PDF LT3570 LT3570 75MHz. 500kHz 75MHz OT-23 LT3500 LT3507 QFN38 3570fb MMSD914LT1 D03314-222 kemet ceramic esr 1nF d03314 r2c sot-23 r1c 472 diode LT3570FE D03314103
2008 - LIMITING INRUSH CURRENT npn

Abstract: sumida lcd inverter pin diagram d03314 D03314-222 r2c sot-23 SOT-23 R2C LT3570
Text: n n n n n n n The LT® 3570 is a buck and boost converter with internal power switches and , LDO controller is capable of delivering up to 10mA of base current to an external NPN transistor , VOUT3 2.5V 100mA 2.2F 70 0 0.2 0.4 0.6 IOUT2 (A) 0.8 1.0 3570 TA01b 10.2k 15.8k 3570 TA01a 3570fa 1 LT3570 ABSOLUTE MAXIMUM RATINGS (Note 1) VIN1, VIN2, VIN3 , 3570 24-Lead (4mm × 4mm) Plastic QFN ­40°C to 125°C LT3570IUF#PBF LT3570IUF#TRPBF 3570


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PDF LT3570 LT3570 75MHz. 500kHz 75MHz OT-23 LT3500 LT3507 QFN38 3570fa LIMITING INRUSH CURRENT npn sumida lcd inverter pin diagram d03314 D03314-222 r2c sot-23 SOT-23 R2C
2008 - LT3570

Abstract: No abstract text available
Text: n n n n n n n The LT® 3570 is a buck and boost converter with internal power switches , . The LDO controller is capable of delivering up to 10mA of base current to an external NPN transistor , FB3 GND VOUT3 2.5V 100mA 2.2µF 70 0 0.2 0.4 0.6 IOUT2 (A) 0.8 1.0 3570 TA01b 10.2k 15.8k 3570 TA01a 3570fb 1 LT3570 ABSOLUTE MAXIMUM RATINGS (Note 1 , LT3570EUF#PBF LT3570EUF#TRPBF 3570 24-Lead (4mm × 4mm) Plastic QFN –40°C to 125Â


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PDF LT3570 LT3570 75MHz. 500kHz 75MHz OT-23 LT3500 LT3507 QFN38 3570fb
2008 - d03314

Abstract: LT3570
Text: DESCRIPTION The LT® 3570 is a buck and boost converter with internal power switches and LDO controller. Each , external NPN transistor . L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation , SYNC 15.8k 3570 TA01a VIN1 VIN2 VIN3 BIAS SHDN1 SHDN2 SHDN3 BOOST 100nF SW2 D2 FB2 SS2 VC2 22k 1nF , 3570 TA01b 3570f 1 LT3570 ABSOLUTE MAXIMUM RATINGS (Note 1) VIN1, VIN2, VIN3, VBIAS , LT3570IFE#PBF TAPE AND REEL LT3570EUF#TRPBF LT3570IUF#TRPBF LT3570EFE#TRPBF LT3570IFE#TRPBF PART MARKING* 3570


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PDF LT3570 10-Pin DFN10 OT-23 QFN38 3570f d03314
2N2713

Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3392 equivalent 2N3391 equivalent 2N2924 2N3404 NPN/2n2714 transistor 2N2923
Text: : 2N3843A NPN 30 20-40 2mA, 5 0.2 10mA, 1mA 150 2 360 2 N3844 NPN 30 35-70 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3844A NPN 30 35-70 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3845 NPN 25 60-120 . 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3845A NPN 25 60-1 20 2mA, 5 0.2 10mA, 1mA 150 2 360 2N3854 NPN 36 35-70 1 iliSSiäBÄSil 2mA, 5 0.2 10mA, 1mA 200 1.7 360 2N3854A NPN 36 35-70 2mA, 5 0.2 10mA, 1mA 200 1.7 360 2N3855 NPN 36 60-120 . , ! VS IE 2N27I3, 2N27I4 Vc =5V Ta = 25°C (INFORMATION FROM MODEL 3IO TRANSISTOR NOISE ANALYZER


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PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N2926 equivalent 2n2714 transistor 2N3392 equivalent 2N3391 equivalent 2N3404 NPN/2n2714 transistor
2N2219 transistor substitute

Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 1n3600 chip 2n8004 diode 2N2222 chip 2N5815 2NS007 2N3856
Text: . 2N3S43 20-40 2N3843A 2N3844 35-70 30 0.2 200 2.0 150 Low noise RF type ideal for RF , 2N3845 60-120 2N3845A 2N3854 35-70 300 2N3855 60-120 18 350 2N3856 , units available for TV video amplifiers. 30dB gain at 4.5mHz. 1 40.38 2N3854A 35-70 300 2N3855A , M79P-X501 Similar to 1N3600 (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent , M86PX503 12 35.104 M22P2 s M22P3 NPN chip for general low signal levels. 8 35.70 M


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PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 1n3600 chip 2n8004 diode 2N2222 chip 2N5815 2NS007 2N3856
k72 transistor

Abstract: transistor k72 2N5143 MPS-K72 k72 npn MPS-K71 TRANSISTOR C 2026 TP6224 mps a20 pnp transistor nine kits K70 Package
Text: SPRflGUE Econoline" Plastic-Molded Silicon SEPTR Transistors ★ -TABLE 1 TRANSISTOR KITS MPS-K20, MPS-K21 and MPS-K22 are three, five and nine transistor kits consisting of MPS-A20's with various hFE selections. MPS-K70, MPS-K71 and MPS-K72 are three, five and nine transistor kits consisting of MPS-A70's with various hpE selections. MPS-K20/MPS-K70 - Three Transistor Kit Color Hfe C % lc = 5.0mA DC , MPS-K21/MPS-K71 — Five Transistor Kit Color hfe c i lc = 5.0 mA DC, VCe = 10VDC Quantity Per Kit


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PDF MPS-K20, MPS-K21 MPS-K22 MPS-A20 MPS-K70, MPS-K71 MPS-K72 MPS-A70 MPS-K20/MPS-K70 10VDC k72 transistor transistor k72 2N5143 k72 npn TRANSISTOR C 2026 TP6224 mps a20 pnp transistor nine kits K70 Package
2SC1061 f

Abstract: No abstract text available
Text: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(susr -1.0V(Max)@ lc= -2.0A • DC Current Gain : hFE= 35-320® lc= -0.5A , orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA671 ELECTRICAL , = -0.5A;VCE= -4V; f,es,= 1MHz 5 fr • hpE-1 Classifications A B C D 35-70


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PDF 2SA671 2SC1061 O-220C -50mA 2SC1061 f
Not Available

Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA754 Silicon PNP Power Transistor ^^F LEASE 1 1 \N DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min) • Low Collector Saturation Voltage , current before placina orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA754 , Current-Gain—Bandwidth Product lc= -0.5A; VCE= -4V fr • hFE-i Classifications A B C 35-70 50-120


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PDF 2SA754 O-220C -50mA;
2SC1419

Abstract: No abstract text available
Text: <£nmi-(londu.ctoi ^Pi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA755 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min) PIN 1.BA5E • Low Collector , before placina orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA755 ELECTRICAL , lc= -0.5A; VCE= -4V ft E-i Classifications A B C 35-70 50-120 100-200 200


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PDF 2SA755 O-220C 2SC1419 -50mA; 2SC1419
Not Available

Abstract: No abstract text available
Text: J.S.11S.U <~>z)ni-C,onaiLct:oi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A • DC Current Gain , current before placing orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA671 , Product lc= -0.5A;VCE= -4V; f,est= 1MHz 5 fi E.! Classifications A B C D 35-70


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PDF 2SA671 2SC1061 O-220C -50mA
2003 - BJ 938 Transistor

Abstract: BJ 938 Transistor Data "Voltage Detector IC" pin diagram of ic 4018 SSOP5 0.65 BU 2058 SSOP5 BD471 DIAGRAM OF IC 3038 voltage detector IC
Text: 3.570 1.5 1.6 50 15 SSOP5 BD4734G 3.332 3.400 3.468 1.5 1.6 50 15 , 3.430 3.500 3.570 V BD4735G Fig2 3.332 3.400 3.468 V BD4734G Fig2 , as a parasitic diode.) (When PinB > GND > PinA, the P-N junction operates as a parasitic transistor , lower than the GND (P substrate) voltage to an input pin. Transistor (NPN) Resistance (PIN B) C , substrate P substrate Parasitic diode Parasitic diode or transistor GND P N GND (PIN B


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PDF BD4729G 194mA 400mV BJ 938 Transistor BJ 938 Transistor Data "Voltage Detector IC" pin diagram of ic 4018 SSOP5 0.65 BU 2058 SSOP5 BD471 DIAGRAM OF IC 3038 voltage detector IC
2N3638 equivalent

Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 of 2n2905 2N5815 2N5818 1N4532 2N5813 beta transistor 2N2222
Text: 2N3843A 2N3844 35-70 30 0.2 200 2.0 150 Low noise RF type ideal for RF and converter , 2N3845A 2N3854 35-70 300 2N3855 60-120 18 350 2N3856 100-200 0.2 200 1.7 375 , video amplifiers. 30dB gain at 4.5mHz. 1 40.38 2N3854A 35-70 300 2N3855A 60-120 30 350 , voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent JEDEC Number GE Type Description Chip Dwg , chip for general low signal levels. 8 35.70 M#2P4 M73P1 NPN darlington chip for preamp input


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PDF 500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 equivalent 2N2219 transistor substitute 2N3638 transistor of 2n2905 2N5815 1N4532 beta transistor 2N2222
BF993

Abstract: 1S marking transistor transistor bc 132
Text: 150 -5 5 .+ 1 5 0 Typ. 450 K/W T1.2/472.0384 E1 3570 C-0 9 131 TELEFUNKEN , Orientation of transistor on ta p e 1 1 Additional marking for specialsa ) DU 06 'Z 7.1.2 Quantity of , 23 and SOT 143 case ') 06 * View on flat side of transistor , view on gummed tape 05 « =View on round side of transistor , view on gummed tape Additional marking " 0 taping without paper film 7.2.1 , taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape is shown in


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PDF 569-GS BF993 1S marking transistor transistor bc 132
PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain 1N3605
Text: (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent JEDEC Number GE Type , M22P3 NPN chip for general low signal levels. 8 35.70 M#2P4 M73P1 NPN darlington chip for


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PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain
CSC1061

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 F DIM K All dim insions in m m . L N O 1 2 3 O A H B C E J D G M ABSOLUTE MAXIMUM , *hFE classification: A: 35-70 B: 60-120 C: 100-200 D: 160-320 Continental Device India Limited


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PDF ISO/TS16949 O-220 CSC1061 C-120 CSC1061
CSC1061

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 F DIM K All dim insions in m m . L N O 1 2 3 O A H B C E J D G M , 0.5A; VCE = 4V 8 MHz *hFE classification: A: 35-70 B: 60-120 C: 100-200 D: 160-320


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PDF O-220 CSC1061 C-120 CSC1061
2001 - CSC1061

Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSC1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 F DIM K All dim insions in m m . L N O , : A: 35-70 B: 60-120 C: 100-200 D: 160-320 Continental Device India Limited Data Sheet Page 2


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PDF O-220 CSC1061 C-120 CSC1061
2007 - NCP698SQ15T1G

Abstract: NCP698SQ33T1G NCP698 package marking LJW NCP698SQ18T1G 419C-02 marking LJY SC70-4 NCP698SQ25T1G NCP698SQ13T1G
Text: transistor , resistors for setting output voltage, current limit, and temperature limit protection circuits , 1.854 2.575 2.856 3.060 3.366 3.570 5.100 1.261 1.455 1.746 2.425 2.716 2.910 3.201 , 3.399 3.570 5.100 - 10 10 20 20 - 20 60 150 150 280 280 - - 750


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PDF NCP698 NCP698 NCP698/D NCP698SQ15T1G NCP698SQ33T1G package marking LJW NCP698SQ18T1G 419C-02 marking LJY SC70-4 NCP698SQ25T1G NCP698SQ13T1G
Not Available

Abstract: No abstract text available
Text: €” —-bbS3T31 DD140DN 1 I o -s r J l A BLX67 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and m ilitary transmitters w ith a supply , -33-05 BLX67 V .H .F ./U .H .F , power transistor C H A R A C T E R IS T IC S T j = 25 °C unless , at 25 °C is diminished by typ. 5 mW/K The transistor is designed to withstand full load mismatch in , .W .R . = 50 : 1 Pg 20 % *or 2. 5 W 50 Q V q q = 13. 8 V where Pgnom = 3570 860 Câ


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PDF ----bbS3T31 DD140DN BLX67 175MHz 7Z65143 bb53T31
LR38486

Abstract: relay socket lr38486 E92191 SE612 EC11-6 E-92191 SM31E/SM31R sm912 DIN-35-70 DIN-35-105
Text: , plus NPN transistor solidstate switch ON/OFF 105 to 130V ac, or 12 to 28V dc CL5RB The , sensor or circuit which has an NPN transistor (current sinking) output. Additionally, inputs may be , electromechanical relay (see information below). Additionally, CL3 models have an NPN transistor solid-state switch , current sinking NPN transistor switch at pin #9. See schematic below and hookup info. INDICATOR LEDs , with an NPN transistor (current sinking) output. The effect of the auxiliary input is described for


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PDF DIN-35-70 RS-11 DIN-35-105. LR38486 relay socket lr38486 E92191 SE612 EC11-6 E-92191 SM31E/SM31R sm912 DIN-35-105
BLX67

Abstract: mrtil transistor 3568
Text: for 2. 5 W transistor output into 50 Q load and Vcc = 13. 8 V 3570 C—09 860 May 1974 y This , . POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and , 86D 01768 D V.H.F./U.H.F, power transistor CHARACTERISTICS Breakdown voltages Collector-base , 86D 01770 D 33 - ò E BLX67 V.H.F./U.H.F. power transistor 2000 fx (MHz I 1500 1000 500 10 Cc , temperatures between C and 90 C relative to that at 25 C is diminished by typ. 5 mW/K The transistor is


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PDF G014DDM BLX67 T-33-Ã BLX67 mrtil transistor 3568
transistor t4 3570

Abstract: 2n2905 replacement LT10310
Text: ±0.04 Line Regulation -0, -1 -2 13V T4 = 25°C 0.006 0.006 0.1 0.03 Input Voltage Range 11.4 40 , boost transistor if toad currents are 5mA or higher. R2 can be added to further reduce current in the , ©riés Mode with Boost Transistor INPUT- * OPTIONAL—REDUCES CURRENT IN OUTPUT SENSE LEM) Effects of , . LINE REGULATION IS DEGRADED IN THIS APPLICATION. Strain Gauge Conditioner for 350Q Bridge 3570 1/2W


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PDF LT1031/LH0070 LH0070 AD581 100dB AD581 LT1031 LM301A LT1012C. transistor t4 3570 2n2905 replacement LT10310
CSC460

Abstract: No abstract text available
Text: SMALL SIGNAL CHARACTERISTICS hFE CLASSIFICATION Continental Device India Limited A: 35-70 B , . COLLECTOR 3. EMITTER MIN. MAX. A B F F 331 Flat Side of Transistor and Adhesive Tape


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PDF CSC460 C-120 CSC460 Rev280901
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