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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

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2n189

Abstract: 2N1136b OC59 2N420 B1151 EQUIVALENT 2T312 2SA114 2N1256 2N1243 2N1152
Text: 2G224 _ _ 2G225 2G226 2G101-2N57 TRANSISTOR SUBSTITUTIONS _ SUB 2SB48 2SB49 2G109 2G324 2N324 , A _ - - TO 5 T05 T05 TO 5 TO 5 T09 -T05 T05 TO 5 TO 5 T05 TO 5 -TO 5 -TO 5 -T022 TO 5 T022 A TOIO TOIO TOIO 2N59-2N122C TRANSISTOR SUBSTITUTIONS ORIG 2N59 CASE TO 5 2N59A TO 5 2N59B TO 5 TO 5 , T022 T022 2N211 2N102/13 T013 T09 2N331 GA53270 T022 (Vc) 2N188 ( A , Pc) 2N192 (Pc) 2N217 2N324 2N362 , TO40 TOl C M C M C A M - - A M C TO 5 TO 5 T05 C TO40 TO40 TOl T05 TOl C TOl 3 TRANSISTOR


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PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b OC59 2N420 B1151 EQUIVALENT 2T312 2SA114 2N1256 2N1243 2N1152
A1383 transistor

Abstract: 2N907 2SA474 2SA475 2N907 PNP A1383 transistor t09 OC309-2 OC309-1 GET885
Text: 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m ■80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m


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PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 A1383 transistor 2N907 2SA474 2SA475 2N907 PNP A1383 transistor t09 OC309-2 OC309-1 GET885
transistor t09

Abstract: A1383 transistor 2sc114 transistor 2SC114 replacement usaf516es048m 2sc107 2SA27 usaf517es060m usaf516es047m 2SA474
Text: 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m ■80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m


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PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor t09 A1383 transistor 2sc114 transistor 2SC114 replacement usaf516es048m 2sc107 2SA27 usaf517es060m usaf516es047m 2SA474
NKT275

Abstract: MA117 2SB495 AF107 TS1000 XC101 MA890 TC236 GET114 2SA250
Text: 2.8m #J 50 25u 22 35p AA T09 8 UST81 165m 2.8m #J 25 6.Ou 6.0 1.0m 90 At T09 9 UST722 165m 2.8m 20 6.Ou 6.0 1.0m 22 A T09 10 UST87 165m .50M 2.8m #J 25 6.Ou 38 35p AA T09 11 UST88 165m 1.0M 2.8m #J 25 6. Ou 80 35p AA T09 12 USTI 9 165m 1.5M 2.8m f J 25 6.Ou 80 35d AA T09 13# XC101 166m 3.3m 0J 35 1? 10u 5.0 8.Om0 66 96u 420 2.0 , TS601 200m #.J 12 9.0 § 5 0 400m 2Ou0 1.00 1Om0 37 T A T09 77 TS602 200m #J 12 9.0 § 5 0


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PDF 2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA 4000Mt NKT275 MA117 2SB495 AF107 TS1000 XC101 MA890 TC236 GET114 2SA250
OC305

Abstract: 102 TRANSISTOR 20p 2sc180 2N1524 2. germanium 2SA28 ASZ20 2SA475 2SA474 OC304
Text: 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m ■80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m


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PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 OC305 102 TRANSISTOR 20p 2sc180 2N1524 2. germanium 2SA28 ASZ20 2SA475 2SA474 OC304
germanium transistor asy

Abstract: TK27A 2G417 TK27 0C71N TK21A TI363 A14P 2N2093 2SC621
Text: 5.0m 65 A A T01 39 # 0C3H 100m 3.0ma 1.7m #S 15 12 10 2.Ou0 6.0 1.0m 50 a 14d A T09 40# 0C4H 100m 3.oma 1.7m #S 15 12 10 2.Ou0 6.0 1.0m 80 A 14p A T09 41 # 2SB443B 100m 3.5M 1.7m 18 , # 0C3K 100 m 8.oma 1.7m #8 15 10 10 6.0 1.0m 50 a 14p A T09 55# 0C4K 100m 8.oma 1.7m #S 15 10 , 1 4p A T09 57# TK25A 100m 10.M 4.0m *J 20 20 4.50 1.0m 63 17p asa 58# TK34C 100m 10M , aa u1 61# 0c3n 100m 15.MA 1.7m #s 15 8.0 10 2.Ou0 6.0 1.0m 50 A 14p A T09 62# 0c4n 100m 15


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PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B germanium transistor asy TK27A 2G417 TK27 0C71N TK21A TI363 A14P 2N2093 2SC621
2N1103

Abstract: CK26A 2SA475 2SA474 A1383 transistor OC304 OC309-2 OC309-1 OC303 2N1524
Text: 1.5m0 6.00 1.0m 6.0 1.0m 30 tA 180 70 78u 5.2k 1.1 3.Op0 A A T033 T01 T09 G 28# 29# 30# 0C3LP 0C3LR , 6.0 1.0m 6.0 1.0m 70 70 150 A A0 A T09 T09 T09 31# 32# 33# 0C4LP 0C4LR 0C5L 120m 120m 120m , 150 150 150 A A0 At T09 T09 T09 34# 35# 36# 0C5LP 0C5LR 2V633 120m 120m 120m ■80M 2.0m 2.0m , A0 PA T09 T09 37# 38# 39# 2V363 2V632 CP398 120m 120m 120m 1.0M 2.5m VOM 2.5m 1.0M 0J 25 25 105 , .Om0 40m 150 t 220 t 20 t 8.0p A A D T05 T05 T09 A A 88 89# 90# 2N643t 2SA75 2SA475 120m 120m 120m


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PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 CK26A 2SA475 2SA474 A1383 transistor OC304 OC309-2 OC309-1 OC303 2N1524
2N5735

Abstract: 2sc113 BSW12 SFT713 2N3400 u34c 2N2943 2N5242 BSX81 2n1675
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90 , 3.0pEl P Ue 100S T09 21# 2SC621 150MS 60 n 120n 30n 150m 6.0 0 1Om.0 75 # 60 2.5p 100n N-PE Si 150J , 80 15 2.5p P-D Ge 100S T09 109 2N2798 235MS 25n 20n 140n 30n 75m .30 0 1Om0 50 20 2.5p P-D Ge


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PDF diff03# BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A 2N5735 2sc113 BSW12 SFT713 2N3400 u34c 2N2943 2N5242 2n1675
MA117

Abstract: NKT275 NKT275A TS-601 2SA250 2SA168 2sb102 XC101 GET114 AF107
Text: 2.8m #J 50 25u 22 35p AA T09 8 UST81 165m 2.8m #J 25 6.Ou 6.0 1.0m 90 At T09 9 UST722 165m 2.8m 20 6.Ou 6.0 1.0m 22 A T09 10 UST87 165m .50M 2.8m #J 25 6.Ou 38 35p AA T09 11 UST88 165m 1.0M 2.8m #J 25 6. Ou 80 35p AA T09 12 USTI 9 165m 1.5M 2.8m f J 25 6.Ou 80 35d AA T09 13# XC101 166m 3.3m 0J 35 1? 10u 5.0 8.Om0 66 96u 420 2.0 , TS601 200m #.J 12 9.0 § 5 0 400m 2Ou0 1.00 1Om0 37 T A T09 77 TS602 200m #J 12 9.0 § 5 0


OCR Scan
PDF B170024 4000n MA117 NKT275 NKT275A TS-601 2SA250 2SA168 2sb102 XC101 GET114 AF107
SFT308

Abstract: SFT307 2N2625 BSY32 65T1 PNP GE 2N2626 2G302 2G395 2N2209 2SA204
Text: 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B SFT308 SFT307 2N2625 BSY32 65T1 PNP GE 2N2626 2G302 2G395 2N2209 2SA204
SFT307

Abstract: usaf516es047m 2N2626 usaf516es048m usaf517es060m SFT308 2N2624 FZJ 101 2N2625 usaf517es060
Text: 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025


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PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 usaf516es048m usaf517es060m SFT308 2N2624 FZJ 101 2N2625 usaf517es060
diode t85

Abstract: 2N7805 trf 510 transistor 2N2152 32N03 t85 diode transistor 45 f 122 2N1073 TRF 840 2N2144A
Text: DIODE TRANSISTOR CO INC 57 DF| HflMfiBSS OOGOCHB 7 | T'^-fcA GERMANIUM FNP HIGH POWER , area call TOLL FREE 800-526-4581 DIODE TRANSISTOR CO INC H? TRANSISTOR OUTLINES DE I 2040355 â , optional, 7. Tab centerline. T09 «" 1 a I ife4 os» MAX.1 Il SÛC " J 95rt NOTE. 1 .065 MIN , T09 NOTESs -IOC NOTE 3 1. Th« variation in actual diamattr within «ni» 20M mall not txcetd .010". , 800-526-4581 I . 2B48352 DIODE TRANSISTOR CO DIODE TRANSISTOR CO INC TNr. 21C 00095 orfSfl-ÖI ~57 ]>F1


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PDF 2N58A 2N629 2N2144A /2N2612 2N5436 2N143/13 2N630 2N2145A 2N2833 2N174A diode t85 2N7805 trf 510 transistor 2N2152 32N03 t85 diode transistor 45 f 122 2N1073 TRF 840
BC138

Abstract: 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 transistor bc138 OC74 BSW12 bc143
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90 , 3.0pEl P Ue 100S T09 21# 2SC621 150MS 60 n 120n 30n 150m 6.0 0 1Om.0 75 # 60 2.5p 100n N-PE Si 150J , 80 15 2.5p P-D Ge 100S T09 109 2N2798 235MS 25n 20n 140n 30n 75m .30 0 1Om0 50 20 2.5p P-D Ge


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PDF diff40V 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; BC138 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 transistor bc138 OC74 BSW12 bc143
bc128 transistor

Abstract: BC128 2SC401 transistor 2N221 MT4102 2s745 BC-128 2S746 2SC185 2SC621
Text: 9.0 G 9 2N1200 100m 4.3M0 769u SS 20 15 2.0 100m ,7Ou0 100 1.5m0 7.0 tA 3.5pEl t T09 10 , 20 15 2.0 100m ,7Ou0 100 1.5m0 7.0 tA 3.5pEl t T09 12 JAN2N1200 100m 25MSA 7.6m ss 20 14 0 1.0 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B bc128 transistor BC128 2SC401 transistor 2N221 MT4102 2s745 BC-128 2S746 2SC185 2SC621
2sc113

Abstract: OC318 EM 18 2N1056 2G271 2SB326 2G110 2SB174 2G524 2G319
Text: 400m 2Om0 80 t 42 t 500nb 27 3.5 11p D A A T09 T01 T05 73# 74# 75# 2SB377 2SB382 2SB383 270m 270m , 25u 3Ou0 1.00 5.0 1.00 2OOm0 10m 15Om0 30 tA 20 60 t 2.0k 20pp AA T09 T05 T05 A 82# 83# 84# AT 128 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2sc113 OC318 EM 18 2N1056 2G271 2SB326 2G110 2SB174 2G524 2G319
SFT308

Abstract: TI365 SFT307 R107 2SA283 2SA204 2G395 2G302 2N2928 2N2625
Text: 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025


OCR Scan
PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 SFT308 TI365 SFT307 R107 2SA283 2SA204 2G395 2G302 2N2928 2N2625
CK22A

Abstract: 2N700 TI401 2n1962 2SA229 2SA239 2SA230 2SA508 RF Magic RF-SAE-AN008-01-00 gm0290
Text: PE0 R97c 5 2N2797t 75m 235M5 1.0m #S 40 20 2.5 100m .300 1Om0 80 1 2.5p D T09 6 2N2798Î 75m 235M5 1.0m #S 60 25 ? 0 100m .300 1Om0 50 t 2.5o D T09 7# 2SA507 75m 250M§ 1.3m #J 20 18 0 .20 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B CK22A 2N700 TI401 2n1962 2SA229 2SA239 2SA230 2SA508 RF Magic RF-SAE-AN008-01-00 gm0290
NS1000 n

Abstract: ST8034 BC420 usaf521es071 2CY38 QD404-78 QD403-78 QD401-78 QD400-78 NS1000
Text: TK250A 500m 100MS $.1 40 20 6 0 250m 9.00 .O2m0 20 DA T09 82 TK251A 500m 100M5 S.l 40 20 6 0 250m 9.00 .O2m0 20 DA T09 83 2N5242t 500m 170MSA 5.0m ♦ s 20 20 5 0 500m .1 OuS 1.00 ,5Om0 , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 2N2800/51 120MIA 45n 1 5n 225n 45n 300m 10 0 1 , 200J TO 5 11 2N2942 150MSA 20n 15n 120n 25n 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B NS1000 n ST8034 BC420 usaf521es071 2CY38 QD404-78 QD403-78 QD401-78 QD400-78 NS1000
"7 segment display" 3102

Abstract: No abstract text available
Text: Temperature measurement with current output and PNP/NPN transistor switching output output 2 , Pt-100 platinum measuring element, DIN EN 60751 Class A t0.5 = 6 s/ t0.9 = 15 s in water at @ 0.2 m , ñmore@turck.com ñwww.turck.com Temperature measurement with current output and PNP/NPN transistor switching , measurement with current output and PNP/NPN transistor switching output output 2 reprogrammable as switching , ñmore@turck.com ñwww.turck.com Temperature measurement with current output and PNP/NPN transistor switching


Original
PDF TS-530-LI2UPN8X-H1141-L016 Pt-100 2013-07-13T18 D-45472 "7 segment display" 3102
2SA240

Abstract: 2N266 TF49 2N2448 AF114 2SA276 2sc113 Transistor get691 AF114N GET874
Text: 100m 5.Ou0 10 3.0m 50 2.8p(Z) ME T09 9 L5431 75m 1.0m #s 20 20 0 .40 10u0 15 2.Om0 6.0 tA , 2N2799T 75m 120MSA 1.0m #S 30 15 2.0 100m .300 10m0 50 t 2.5p D T09 108# AF178 75m 180MS 1.6m 0.1 , Field Effect Transistor Radiation Resistant Device (See above also) [71 — Maximum $ - Cob §- C , 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 2N2800/51 120MIA 45n 1 , 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90 # 35 2.5p 100n N-PE Si


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2SA240 2N266 TF49 2N2448 AF114 2SA276 2sc113 Transistor get691 AF114N GET874
2N5735

Abstract: T120TA BC216A BSW12 2SC621 6PL2 2SC97 2SC580 2SC502 2sc113
Text: ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 2N2800/51 120MIA 45n 1 5n 225n 45n 300m 10 0 1 , 200J TO 5 11 2N2942 150MSA 20n 15n 120n 25n 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12 , 60n 30n 200n 60n 150m .50 0 5Om0 300 0 4.0 3.0pEl P Ue 100S T09 21# 2SC621 150MS 60 n 120n 30n , 2N2797 235M5 20n 1 5n 1 20n 25n 75m .30 0 1Om0 80 15 2.5p P-D Ge 100S T09 109 2N2798 235MS 25n 20n


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2N5735 T120TA BC216A BSW12 2SC621 6PL2 2SC97 2SC580 2SC502 2sc113
transistor+2202

Abstract: No abstract text available
Text: Temperature measurement with current output and PNP/NPN transistor switching output output 2 , Pt-100 platinum measuring element, DIN EN 60751 Class A t0.5 = 6 s/ t0.9 = 15 s in water at @ 0.2 m , ñmore@turck.com ñwww.turck.com Temperature measurement with current output and PNP/NPN transistor switching , ñwww.turck.com Temperature measurement with current output and PNP/NPN transistor switching output output 2 , transistor switching output output 2 reprogrammable as switching output TS-516-LI2UPN8X-H1141-L016 Wiring


Original
PDF TS-516-LI2UPN8X-H1141-L016 Pt-100 2013-07-13T18 D-45472 transistor+2202
transistor 2sC110

Abstract: AT350 A778 BC255 SS5080 RT483 NPN transistor a777 2N2095 A778 transistor j589
Text: 20 200m 10m 10m 20 40 t 40 t 6.0p 6.Od ME ME ME T09 T05 TO 5 67 68# 69 RT5413 BSW39t RT5401 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , irtos Tôâ 2 2N2943 120M5A 25n 20n 140n 30n 1 50m .50 0 5Om0 45 5.0 4.Op0 P-D Ge 100S T09 3 , 150m .50 0 50m 65 4.0 3.5p0 P-D Ge 100S T09 12# 2SC912 150MS 20n 5.On 100n 40n 150m 6.0 0 1Orri0 90 , 3.0pEl P Ue 100S T09 21# 2SC621 150MS 60 n 120n 30n 150m 6.0 0 1Om.0 75 # 60 2.5p 100n N-PE Si 150J


OCR Scan
PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B transistor 2sC110 AT350 A778 BC255 SS5080 RT483 NPN transistor a777 2N2095 A778 transistor j589
SFT308

Abstract: SFT307 2N2625 2N2209 GT123 7350-a 2N2928 2G302 XA162 65T1 PNP GE
Text: 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025


OCR Scan
PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 SFT308 SFT307 2N2625 2N2209 GT123 7350-a 2N2928 2G302 XA162 65T1 PNP GE
2N2625

Abstract: SFT308 SFT307 2SC100 R107T R107 2SA283 2SA204 2N2209 2G395
Text: 1.0m 1OOm0 75 80 t 20p 14p 16D0 AA A A T05 T09 TOI A 25# 26# 27# 2G309 2G344 2G397T 150m 150m 150m , .OD A d T09 T044 T018 A0 46 47 48# MM404AT UST764 ASY30 150m 150m 150m 25M 25.M 30.M 2.0m 2.5m #j fj , 8.0p 4.0DE1 A E d T09 T018 X12 52# 53# 54 SFT115 XA161 2SA31It 150m 150m 150m 40.M 40.MI 50M 2.5m , 45 t 2.0p 5p0 4pH ME ME d T058 T018 T09 F 67 68 69 2N2512 2N2942T 2N3400t 150m 150m 150m 140MIA , .500 .5 00 1Om0 50m 5Om0< 40 A 65 t 35 M 5.Op0 3.5p(Z) 3o0 d T01 2 T09 T09 G 70 71 USAF509ES025


OCR Scan
PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2N2625 SFT308 SFT307 R107T R107 2SA283 2SA204 2N2209 2G395
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