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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor t03 Datasheets Context Search

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LG color tv Circuit Diagram schematics

Abstract: sangamo capacitor beckman helipot potentiometer 2N3055 RCA BECKMAN helipot rca transistor 2n3773 rca allen bradley potentiometer type j TL SL 100B npn transistor MC14001CP
Text: – Q304, 5 ¡Transistor T066 6, 8, 9, 10 62004003 2N3771 RCA ! ■■î Q307 Transistor T03 62005013 , constant by the series pass transistor system which consists of a number of paralleled transistors Cor , 600V 53008001 SC260M GE i î ¡Q3 ■SCR 35A 600V 61001005 C35M GE I î IQ101-3 Transistor , )-jlNV-AMP +SHUNT CIRCUIT REF DESCRIPTION EM PART# MFR PART NO. MFR Î CODE ! Transistor 62005017 2N3773 ■RCA ! 1 Q104 Transistor 62004001 2N3740 RCA ! î Transistor 62004006 2N6420 RCA ! â


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PDF 89/336/EEC) oi-44 in4003. I-4G5014- LG color tv Circuit Diagram schematics sangamo capacitor beckman helipot potentiometer 2N3055 RCA BECKMAN helipot rca transistor 2n3773 rca allen bradley potentiometer type j TL SL 100B npn transistor MC14001CP
diode t85

Abstract: 2N7805 trf 510 transistor 2N2152 32N03 t85 diode transistor 45 f 122 2N1073 TRF 840 2N2144A
Text: DIODE TRANSISTOR CO INC 57 DF| HflMfiBSS OOGOCHB 7 | T'^-fcA GERMANIUM FNP HIGH POWER TRANSISTORS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 2N58A R173 2N629 T03 2N2144A T03 /2N2612 T03 > 2N5436 T03 2N143/13 T013 2N630 T03 2N2145A T03 2N2833 T03 2 N 5437 T03 2N174A T036 2N665 T03 2N2146A T03 2N2834 T03 "X2N5438 T03 2N277 T036 X2N669 T03 2N2152 T85 2N2912 R74 2 N 5439 T03 2N278 T036 2N1011 T03 2N2152A T85 2 N4048 T036 '2N5440 T03 2N297A T03 2N1038 R122 2N2153 T85 2 N4049


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PDF 2N58A 2N629 2N2144A /2N2612 2N5436 2N143/13 2N630 2N2145A 2N2833 2N174A diode t85 2N7805 trf 510 transistor 2N2152 32N03 t85 diode transistor 45 f 122 2N1073 TRF 840
2n189

Abstract: 2N1136b OC59 2N420 B1151 EQUIVALENT 2T312 2SA114 2N1256 2N1243 2N1152
Text: T022 F M TO 3 TO 3 F M F M T03 F M TO 3 F M T013 TO10 T013 TO10 TOl 3 TO10 TO 3 4 TRANSISTOR , T07 TO 7 T07 T07 T07 TO 5 TO 3 T05sh TO 3 TO 3 T03 TO 3 TO3 TO 3 TO 5 TO5 TRANSISTOR SUBSTITUTIONS , 2N458A CD1312 CDT1322 2N461 12 TRANSISTOR SUBSTITUTIONS 2N456A-2N512 T03 T03 2N1451 2N1452 2N1447 , 2G224 _ _ 2G225 2G226 2G101-2N57 TRANSISTOR SUBSTITUTIONS _ SUB 2SB48 2SB49 2G109 2G324 2N324 , TOIO TOIO 2N59-2N122C TRANSISTOR SUBSTITUTIONS ORIG 2N59 CASE TO 5 2N59A TO 5 2N59B TO 5 TO 5


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PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b OC59 2N420 B1151 EQUIVALENT 2T312 2SA114 2N1256 2N1243 2N1152
2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 2N2144A DTG-2400 2N1100 2N126 2n228 transistor
Text: Material Copyrighted By Its Respective Manufacturer DIODE TRANSISTOR CO INC 2? DF| EflHfl352 D0G0DT3 7 , DEVICES PKG 2N58A R173 2N629 T03 2N2144A T03 /12N2612 T03 > 2 N 5436 T03 2N143/13 T013 2N630 T03 2N2145A T03 2N2833 T03 ' 2 N 5437 T03 2N174A T036 2N665 T03 2N2146A T03 2N2834 T03 "X2N5438 T03 2N277 T036 X2N669 T03 2N2152 T85 2N2912 R74 2 N 5439 T03 2N278 T036 2N1011 T03 2N2152A T85 2 N4048 T036 '2N5440 T03 2N297A T03 2N1038 R122 2N2153 T85 2 N4049 T036 2N5887 T066 2N350 T03 2N1042 T6 2N2154 T85 2N4050 T036


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PDF CY7C1339 100-MHz 166-MHz 133-MHz CY7C1339 Y220a/ T0220AA T0220AB TMW515TDB 2N7805 gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 2N2144A DTG-2400 2N1100 2N126 2n228 transistor
Not Available

Abstract: No abstract text available
Text: A T03 transistor . T he noise contribution of the O P27 gain stages is also negligible due to the , spectrum analyzer. And, since we assume equal noise contributions from each transistor in the M A T03 , T03 transistor pairs. 100k FREQUENCY (Hz) T he cascode current source has a com m on base , ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 (jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High


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PDF MAT03
A1381 transistor

Abstract: 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
Text: 50MIA 150m 1.Ou0 D T03 12 13 USAF525ES08 AMF210 5Mt 500m 526m 2.0 80 0 $J $C 1B 8.0 5.0 100 8.0 .50 , 10On0El D PL T053 T03 23 24 25 N PC 14-1 B N PC 14-2 2N2403 565m 565m 571m0 100 0 100 0 8.0 0 IJ IJ 1 10 , 600m 70 40 20 200 # 90 # 60 50MSA 40MIA 150Mt 2.5 1OOn00 1OOn00 20n PL PL EA T03 T03 TO 5 C0 C0 26 27 , MT75b T03 B C0 29# 30# 31* BUY44 BUY55-4Î BUY55-6t 588m 600m§ 600m§ 30 01 60 0 60 0 IJ IJ IJ 7.0 10 , 100 25MI 20MI 20MI 1.0u# 2.Ou00 2.Ou0El DA D D T03 T03 T03 C0 B B 32# 33# 34# BUY55-10t BUY56


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
DAC-08

Abstract: No abstract text available
Text: Transistor M T O PIN CONNECTION TO-78 (H Suffix) GENERAL DESCRIPTION T he M A T03 dual m onolithic PN P transistor offers excellent param etric m atching and high frequency perform ance. Low noise , A T03 , the output is divided by V2 to determ ine a single transistor 's input noise. Air currents , idth. Figure 16 illustrates a cascode current m irror consisting of two M A T03 transistor pairs. T he , max), makes the M A T03 an excellent choice for dem anding pream plifier ap plications. T ight current


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PDF
2N1384

Abstract: 2N907 MM4647 2N907 transistor 2SA478 2SA327 MM4645 2N907 PNP 2SA248 190n0
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 1.5ut 1.0ut 85 05 5.0 0 10 0 15 #A 6OOp0 N-EM S 200J T03 7 1843-3520 25MSA 5OOn0t 1.5uT I.Out 85 05 5.0 0 20 0 10 #A 6OOp0 N-EM S 200J T03 C0 8 1843-3705 25M5A 5OOn0t 1.5ut I.Out 85 05 5.0 0 5.0 0 20 #A 6OOp0 N-EM S 200J T03 C0 9 1843-3710 25MSA 5OOn0t 1.5ut I.Out 85 05 5.0 0 10 0 15 #A 6OOd0 N-EM S 200J T03 C0 10 1843-3720 25M5A 5OOn0t 1.5ut I.Out 85 05 5.0 0 20 0 10 #A 6OOp0 N-EM S


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PDF diff103 USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2N1384 2N907 MM4647 2N907 transistor 2SA478 2SA327 MM4645 2N907 PNP 2SA248 190n0
MA7809

Abstract: MD981F MP2061-6 QD402-71 MP2062-2 hfe1 hFE-130 MP2062-3 MP2060-3 MA7807
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , MP2060-1 MP2060-2 6 6 6 N-PE P P s G G e L2 TO 3 T03 C0 BVCBO-30V;BVEBO-3.0V;ICBO-10nA max./VCB-1 5V;hFE , . 34 35 36 MP2060-3 MP2060-4 MP2060-5 6 6 6 P P P Ge Ge Ge T03 T03 T03 C<& 00 Matched Pair of MP2060 , ., 120 max. 37 38 39 MP2060-6 MP2060-7 MP2061-1 6 6 6 P P P Ge Ge Ge T03 T03 T03 C0 C0 Matched Pair of , -30 min. 45 max. 40 41 42 MP2061-2 MP2061-3 MP2061-4 6 6 6 P P P Ge Ge Ge T03 T03 T03 C$ C. 0 Matched


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PDF diff2719* /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea MA7809 MD981F MP2061-6 QD402-71 MP2062-2 hfe1 hFE-130 MP2062-3 MP2060-3 MA7807
2008 - T04 transistor

Abstract: transistor t04 transistor t06 t06 TRANSISTOR AT80C51RA2 36425 atmel 8051 datasheet TS87C51RB2 TS80C51RB2 Atmel AT80
Text: AT80C51RA2 Lot Number Errata List All T02, T03 ,T04,T05,T06 TS80C51RB2 Lot Number Errata List 38584 T01, T02 , T03 , T04, T05, T06 > 38584 TS87C51RB2 TS80C51RB2 AT80C51RA2 T02 , T03 , T04, T05, T06 Errata Sheet TS87C51RB2 Lot Number Errata List 36425 T01, T02 , T03 , T04, T05, T06 > 36425 T02 , T03 , T04, T05, T06 Errata Descriptions 1. UART/Reception in Modes 1, 2 and , transistor creates a short circuit with the external RAM buffer or peripheral when the RAM or peripheral


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PDF AT80C51RA2 TS80C51RB2 TS87C51RB2 4154D T04 transistor transistor t04 transistor t06 t06 TRANSISTOR AT80C51RA2 36425 atmel 8051 datasheet TS87C51RB2 TS80C51RB2 Atmel AT80
t03 package transistor pin dimensions

Abstract: 8830 transistor
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available i IT ¡electronics , Num ber 8830 Issue 1 Page 1 o f 1 SILICON EPITAXIAL .(^electronics NPN TRANSISTOR Semelab Limited , EPITAXIAL NPN TRANSISTOR 2N5886 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) IT ¡electronics , 7.92 (0.312) 12.70 (0.50) T03 (T 0-204A A ) METAL PACKAGE Underside View Pin 1 - Base Pin 2 -


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PDF 2N5886 t03 package transistor pin dimensions 8830 transistor
MA7809

Abstract: L17D TE3606 T046 T018 ST59 FV914 RT3500 MP2063-4 QD402-71
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , MP2060-1 MP2060-2 6 6 6 N-PE P P s G G e L2 TO 3 T03 C0 BVCBO-30V;BVEBO-3.0V;ICBO-10nA max./VCB-1 5V;hFE , . 34 35 36 MP2060-3 MP2060-4 MP2060-5 6 6 6 P P P Ge Ge Ge T03 T03 T03 C<& 00 Matched Pair of MP2060 , ., 120 max. 37 38 39 MP2060-6 MP2060-7 MP2061-1 6 6 6 P P P Ge Ge Ge T03 T03 T03 C0 C0 Matched Pair of


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PDF diff2719* /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea MA7809 L17D TE3606 T046 T018 ST59 FV914 RT3500 MP2063-4 QD402-71
y51 h 120c

Abstract: ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
Text: 80WH 80WH T03 T03 T03 T03 T03 L05 L05 L05 L05 L05 60V 80V 40V 60V 80V 60V 80V 40V 60V 80V 30V 30V 30V 30V 30V 20A 20A 25A 25A 25A 100C 10 0 C 10 0 C 10 0 C 10 0 C PG PG PG PG PG T03 TOIA TOIA TOIA , 2G524 TRANSISTOR NUMBER OA LT PACK­ AGE LEAD INFO VCB MAX 2CY17 2CY18 2CYI9 2CY20 2CY21 PG PG PG , 2G220 2G221 PG PG PG PG PG TOIB T05 T03 T03 T03 LOl L04 L05 L05 L05 2G222 2G223 2G224 2G225 2G226 PG PG PG PG PG T03 T03 T03 T03 T03 2G227 2G228 2G229 2G230 2G231 PG PG PG PG PG 2G240 2G301 2G302


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PDF 500MA 500MA 240MWF 240MWF y51 h 120c ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
Not Available

Abstract: No abstract text available
Text: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally , . Document Number 9313 Issue 2 Page 1 of 1 SILICON NPN POWER TRANSISTOR 2N3055 il^jeleçtroniçs , TRANSISTOR 2N3055 IT ¡electronics . , CM CM CM 2^T OO «5 >C 1 7.92 (0 .312 ) 12.70 (0 .50 ) T03 (T 0-204A A ) METAL


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PDF 2N3055
2003 - T04 transistor

Abstract: transistor t04 transistor t06 t06 49 t06 TRANSISTOR countdown timer using 8051 atmel 8051 datasheet uart false start movx t04 "transistor"
Text: TS80C51RB2 Lot Number Errata List 38584 T01, T02 , T03 , T04, T05, T06 > 38584 T02 , T03 , T04, T05, T06 TS87C51RB2 Lot Number Errata List 36425 T01, T02 , T03 , T04, T05, T06 > 36425 TS87C51RB2 TS80C51RB2 Errata Sheet T02 , T03 , T04, T05, T06 Errata Descriptions 1. UART/Reception in , strong internal pull-down N transistor creates a short circuit with the external RAM buffer or


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PDF TS80C51RB2 TS87C51RB2 4154C T04 transistor transistor t04 transistor t06 t06 49 t06 TRANSISTOR countdown timer using 8051 atmel 8051 datasheet uart false start movx t04 "transistor"
t03 package transistor pin configuration

Abstract: t03 package transistor pin dimensions DDG332 LAS-8100 LAS-8101 2n 0401 transistor t03 switching transistor
Text: SEMTECH CORP SÛE D 013^13^ DDG332Ô 513 «SET LAS-8100 3 AMP PEAK SWITCHING TRANSISTOR , Series switching transistor drivers are designed to drive low gain, high current, switching transistors , PACKAGE OUTPUT LAS 8100 T0-3 SINGLE LAS 8100P TO-220 SINGLE LAS 8101 T0-3 DUAL BLOCK DIAGRAM , ^ 0GG332ci 4BT «SET 3 AMP PEAK SWITCHING TRANSISTOR DRIVERS ELECTRICAL CHARACTERISTICS Test conditions , 013^131 0003330 mi ■SE LAS-8100 3 AMP PEAK SWITCHING TRANSISTOR DRIVERS OPERATIONAL DATA SWITCHING


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PDF DDG332Ã LAS-8100 100mV 00D3333 8100P t03 package transistor pin configuration t03 package transistor pin dimensions DDG332 LAS-8100 LAS-8101 2n 0401 transistor t03 switching transistor
Not Available

Abstract: No abstract text available
Text: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '■E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed , . Docum ent Num ber 8830 Issue 1 Page 1 o f 1 SILICON EPITAXIAL .(^electronics NPN TRANSISTOR , . Semelab Limited SILICON EPITAXIAL NPN TRANSISTOR 2N5886 MECHANICAL DATA Dimensions in mm , ' 1 7.92 (0.312) 12.70 (0.50) T03 (T 0-204A A ) METAL PACKAGE Underside View Pin 1 -


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PDF 2N5886
6331-1

Abstract: t03 package transistor pin dimensions LAS6330P1 6331P1 LAS 6330P1 za100 LAS6331A LAS-6330 Lambda Pulse Modulator LAS6331P1
Text: suppression logic, transconduc-tance error amplifier, and a 3 amp Darlington output transistor with internal , Temperature Range Tj Tstg -25 to 125 Lead Temperature (Soldering) 60 sec for T0-3 10 sec for SIP Tlead 300 260 °C DEVICE SELECTION GUIDE DEVICE CURRENT LIMIT PACKAGE LAS 6330A Fixed T0-3 LAS 6331A Adjustable T0-3 LAS 6330P1 Fixed Plastic SIP LAS 6331P1 Adjustable Plastic SIP BLOCK DIAGRAM 0 E0 42


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PDF LAS6330, LAS6330P1, 6331P1 113-Jâ LAS6330 LAS6331 LAS6330P1 LAS6331P1 6331-1 t03 package transistor pin dimensions LAS6330P1 6331P1 LAS 6330P1 za100 LAS6331A LAS-6330 Lambda Pulse Modulator LAS6331P1
MP2145

Abstract: MP2143 2n463 MP2143A MT63 ASZ16 MP1534 2N115 transistor 2SB235 MP2144
Text: 3 C0 13 2N2070 1.0 20 5 12 3.0 80 30 60 0 15m 2.00 5.0 30 200 1.5kA 125m T03 C0 14 2N2071 1.0 , 1.0 60 0 #J 15 100 40 75 0 5.0m 1.5 10 40 100 0 2.5k 30m A T03 25# 2SB485 1.0 60 0 #J 15 140 , 3.0 10 15 0 100kt A MT15 27 B1110 1.0 60 #J 3.0 60 2.0m .20 A T03 28 B102000 1.0 # , B102003 1.0 # 45 0 7.0 60 2.Om0 2.00 1.0 40 250 .20 A T03 32 B103000 1.0 # 45 0 10 30 2.Om0 2.00 3.0 40 200 .12 A T03 33 B103001 1.0 # 45 0 10 40 2.Om0 2.00 3.0 40 200 .12 A T03 34


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PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2145 MP2143 2n463 MP2143A MT63 ASZ16 MP1534 2N115 transistor 2SB235 MP2144
2N5036

Abstract: TRANSISTOR BV 32 usaf516es047m 2N5035 2N5034 FZJ 101 SEC1077 B170001 156-043 2N5425
Text: 50MIA 150m 1.Ou0 D T03 12 13 USAF525ES08 AMF210 5Mt 500m 526m 2.0 80 0 $J $C 1B 8.0 5.0 100 8.0 .50 , 10On0El D PL T053 T03 23 24 25 N PC 14-1 B N PC 14-2 2N2403 565m 565m 571m0 100 0 100 0 8.0 0 IJ IJ 1 10 , 600m 70 40 20 200 # 90 # 60 50MSA 40MIA 150Mt 2.5 1OOn00 1OOn00 20n PL PL EA T03 T03 TO 5 C0 C0 26 27 , MT75b T03 B C0 29# 30# 31* BUY44 BUY55-4Î BUY55-6t 588m 600m§ 600m§ 30 01 60 0 60 0 IJ IJ IJ 7.0 10 , 100 25MI 20MI 20MI 1.0u# 2.Ou00 2.Ou0El DA D D T03 T03 T03 C0 B B 32# 33# 34# BUY55-10t BUY56


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PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N5036 TRANSISTOR BV 32 usaf516es047m 2N5035 2N5034 FZJ 101 SEC1077 B170001 156-043 2N5425
2sa501

Abstract: MM4647 2SA478 USAF508ES021 2SA248 2SA482 2N1508 AT465 TIP14 usaf521es071m
Text: ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , S 140S TO 5 6 1843-3510 25M5A 5OOn0t 1.5ut 1.0ut 85 05 5.0 0 10 0 15 #A 6OOp0 N-EM S 200J T03 7 1843-3520 25MSA 5OOn0t 1.5uT I.Out 85 05 5.0 0 20 0 10 #A 6OOp0 N-EM S 200J T03 C0 8 1843-3705 25M5A 5OOn0t 1.5ut I.Out 85 05 5.0 0 5.0 0 20 #A 6OOp0 N-EM S 200J T03 C0 9 1843-3710 25MSA 5OOn0t 1.5ut I.Out 85 05 5.0 0 10 0 15 #A 6OOd0 N-EM S 200J T03 C0 10 1843-3720 25M5A 5OOn0t 1.5ut


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PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2sa501 MM4647 2SA478 USAF508ES021 2SA248 2SA482 AT465 TIP14 usaf521es071m
Transistor 2n3055

Abstract: power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin
Text: SILICON NPN POWER TRANSISTOR 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available IT ¡electronics , ://www.semelab-tt.com Document Number 9313 Issue 2 Page 1 of 1 SILICON NPN POWER TRANSISTOR 2N3055 ELECTRICAL , TRANSISTOR 2N3055 MECHANICAL DATA Dimensions in mm (inches) 25 . 1 5 (0 .99 ) IT ¡electronics , 1 7.92 (0 .312 ) 12.70 (0 .50 ) T03 (T 0-204A A ) METAL PACKAGE Underside View Pin 1 -


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PDF 2N3055 Transistor 2n3055 power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin
t03 package transistor pin configuration

Abstract: LAS8100P c5cs transistors,darlingtons LAS8101 t03 package transistor pin dimensions
Text: A LAMBDA INTERFACE DRIVERS LAS 8100 SERIES 3 AMP PEAK SWITCHING TRANSISTOR DRIVERS ABSOLUTE , 8100 Series switching transistor drivers are designed to drive low gain, high current, switching , DEVICE SELECTION GUIDE DEVICE PACKAGE OUTPUT LAS 8100 T0-3 SINGLE LAS 8100P T0-220 SINGLE LAS 8101 T0-3 , CURRENT VS. SUPPLY VOLTAGE SUPPLY VOLTAGE, Vcc (VOLTS) (V0 is determined by the switching transistor , Material Copyrighted By Its Respective Manufacturer LAS 8100 SERIES TYPICAL APPLICATION TRANSISTOR


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PDF 100mV 8100P t03 package transistor pin configuration LAS8100P c5cs transistors,darlingtons LAS8101 t03 package transistor pin dimensions
2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC520 MP1537 TK30556 TK30557 TK30558
Text: Ï03 T03 T03 rrrt 4 5 6# TK30559 TK30560 2SC519 666m 666m 667m 115 0 115 0 50 SC sc «J 15 15 5.0 , 2.0MSA 2.0MSA 20kS 275m 275m ME T03 T03 T03 C0 C0 7# 8# 9# 2SC520 2SC521 2S0181 667m 667m 667m 50 50 , 1.0 5.0 50 0 50 0 30 160 # 20kS 20kS 10MS 100m ME ME ME T03 T03 TO 3 C(f> 10 11# 12# CTP1136 ST66t , .50 1.5 1.5 10 10 80 80 25kt 25kt .50 1.0 1.0 1.3u 1.3u A D D T03 T03 13# 14 15 ST615T 1 756-0440T , EM T03 T063 T063 16 17 18 156-04 156-06 156-08 684m 684m 684m 120 0 120 0 120 0 . SJ SJ SJ


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PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2SC102 transistor 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC520 MP1537 TK30556 TK30557 TK30558
MHT1810

Abstract: 2n1821 113003 MHT2008 2N463 MHT1909 MP1534 ASZ16 A580-1603 2N5579
Text: 80 170 170 160 20MSA 20MIA 2.0kA 200m 200m 2.0 T03 T03 MT85 S0 T0 13 14 15 2N2379T 2N2793 MHT1802 , 2.00 10 30 30 25 20 20 80 80 3.0k 200k§ 200k§ 23m 13m lOu A A A T036 T03 TO 3 37 38 39 TIG07 TIG08 , 3OOU0 2OOU0 2.00 2.00 2.00 30 30 30 20 20 20 80 80 80 200k§ 200k§ 200ki 13m 23m 13m A A A T03 T041 , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , > 2 B170022 6000n 400n 1.0u 90 0 4.0 0 3.Om0 20 270m N-DM Ri 200J T03 r.0 3 B170025 6000n 400n


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PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 MHT2008 2N463 MHT1909 MP1534 ASZ16 A580-1603 2N5579
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