The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS

transistor t 04 27 Datasheets Context Search

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bfq34 application note

Abstract: ON4497 BFQ34 sf 122 transistor
Text: DOBlSbS 27 fl ■A P Xroduct specification NPN 4 GHz wideband transistor BFQ34 - N AMER PHILIPS/DISCRETE , transistor BFQ34 ^_N AnER PHILIPS/DISCRETE falE » DESCRIPTION NPN transistor encapsulated in a 4 lead , dissipation up to T0 = 160 °C - 2.7 W h transition frequency lc = 150 mA; VCE = 15 V; f = 500 MHz 4 - GHz , 1.2 V Pl, output power at 1 dB gain compression lc= 120 mA; VCE = 15V; RL = 75Q; f = 800 MHz; T ^ = , specification NPN 4 GHz wideband transistor BFQ34 - N AMER PHILIPS/DISCRETE hTE J> LIMITING VALUES In


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PDF DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor
Transistor 78 L 05

Abstract: No abstract text available
Text: ecifica tio n BFQ34 NPN 4 GHz wideband transistor N AUER PHILIPS/DISCRETE f .l » e'E PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SO T 122A envelope with a ceramic cap , collector current Plot total power dissipation up to T ,^ 160 °C - 2.7 fT Vo transition , specification NPN 4 GHz wideband transistor BFQ34 N AUER PHILIPS/DISCRETE bSE CH ARACTERISTICS T , iconductors b b S B T B l DDBlSbS 57fl ■APXroductsPecification NPN 4 GHz wideband transistor BFQ34


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PDF BFQ34 Transistor 78 L 05
smd transistor marking n3

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
Text: Semiconductors Preliminary specification NPN general purpose transistor NOTES 2PC4617J 1999 May 04 , rights. Printed in The Netherlands 1 1 5002/00/02/pp8 D a te o t release: 1999 M ay 04 Docum , DISCRETE SEMICONDUCTORS 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor FEATURES · Power dissipation


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PDF 2PC4617J 2PC4617J SC-89 OT490) SCA63 5002/00/02/pp8 smd transistor marking n3 MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
2000 - 2N7002 Philips

Abstract: 03aa03 philips 2n7002
Text: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 - 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using , enhancement mode field-effect transistor 03aa08 1 IS VGS = 0 V (A) 0.8 0.6 o 150 C 0.4 , 2N7002 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick , reserved. 9397 750 07319 Product specification Rev. 03 - 27 July 2000 2 of 13 2N7002


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PDF 2N7002 2N7002 03ab44 2N7002 Philips 03aa03 philips 2n7002
2003 - TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Text: r b i d e S c h o t t k y Di o d e s ( t h i n Q ! ) 25 Alphanumeric Listing 27 Pa c k a , SKW30N60HS 15 27 0.2 SGB15N60HS Hi g h S pe ed D u o Pa c k TM 6 0 0 V ( I G B T + Em C o n , House 1685 Gauteng South Africa T (+ 27 ) 11 - 6 52 20 00 or 27 19 Fax (+ 27 ) 11 - 6 52 25 73 or 26 14 , ) 28 32 05 00 Fax (+ 8 52) 28 27 97 62 Infineon Technologies Nordic AB Box 46 164 93 Kista T , , Block A Tian An International Building Renmin Nan Road Shenzhen 518 001 T (+86) 7 55 -2 28 91 04


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PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
2006 - Buck-Boost Converter advantages

Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ' S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford , rise as a result of ever-increasing functions. E N E R G Y G E N E R A T I O N F R E Q U E N T L Y , these overly proportional growing energy requirements, we must use energy more efficiently. S W I T C , the equipment's operational time. S O M E E L E C T R O N I C D E V I C E S operate only for a few


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PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
1996 - transistor 2222

Abstract: "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC
Text: resistor 10 ; 0.4 W T1 bias transistor 2222 032 14152 BC548; note 3 4330 030 36301 , DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X FEATURES , planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. MBK523


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PDF BFG11W/X OT343 SCA49 127101/1200/02/pp12 transistor 2222 "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC
1996 - TRANSISTOR CATALOGUE

Abstract: "MARKING CODE S4" BC548 MGD415
Text: ; 0.4 W T1 bias transistor CATALOGUE N0. BC548; note 3 2222 032 14152 4330 030 36301 , Zi Fig.9 1996 Jun 04 ZL MBA451 Definition of transistor impedance. 8 Load , specification NPN 2 GHz power transistor BFG11W/X NOTES 1996 Jun 04 11 Philips Semiconductors ­ , DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04


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PDF BFG11W/X OT343 SCA49 127101/1200/02/pp12 TRANSISTOR CATALOGUE "MARKING CODE S4" BC548 MGD415
1998 - Not Available

Abstract: No abstract text available
Text: = 0.5 0.8 0.1 0.4 0.0 0.01 P D tp D= T 0.10 1.00 10.00 0.01 1E-06 , DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product , Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications , Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A STATIC CHARACTERISTICS


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PDF BUJ103A O220AB SCA60 135104/240/02/pp12
73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: 0.1 0.2 0.3 0.4 0.5 1.0 Frequency, f (GHz) 2.0 5.0 5 3-3 Small Signal Bipolar Transistor , Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain , 10 15 20 25 30 35 Input Power, P in (dBm) Small Signal Bipolar Transistor , ' NE68035 NE68135 NE85635 T O -9 2 NE02132 NE85632 » (BHi) 0.5 1.0 2.0 2.0 4.0 2.0 2.0 1.0 0.5 1.0 0.5 , 14.0 9.0 15.5 18.5 15.5 11.0 ( T TYP (O il) 4.5 8.0 6.0 8.5 10.0 9.0 7.0 8.0 4.5 8.0 2.0 m TYP


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
2010 - Not Available

Abstract: No abstract text available
Text: BUJD203AX NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product , Figure 12; see Figure 13 - 2.7 3.3 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj , 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 T (2) 2.5 w 0.4 Notes 1. Terminal dimensions within , NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full


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PDF BUJD203AX OT186A O220F)
2010 - BUJD203AX

Abstract: No abstract text available
Text: BUJD203AX NPN power transistor with integrated diode Rev. 01 - 27 September 2010 Product data , 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 , 2.6 T (2) 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled , power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack , Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning


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PDF BUJD203AX OT186A O220F) BUJD203AX
1997 - AN569

Abstract: MTDF1C02HD SMD310
Text: Voltage 0.13 4.0 0.6 TJ = 25°C 0.5 0.4 2.7 V 0.3 0.2 VGS = 4.5 V 0.1 0 0 1.0 , value. ©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997 1 MTDF1C02HD , Power MOSFET Transistor Device Data MTDF1C02HD ELECTRICAL CHARACTERISTICS (TA = 25°C unless , 60 - - td(on) (N) (P) - - 8.0 15 - - tr (N) (P) - - 27 27 - - td(off) (N) (P) - - 23 60 - - tf (N) (P) - - 34


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PDF MTDF1C02HD/D MTDF1C02HD AN569 MTDF1C02HD SMD310
2007 - 4350SPN

Abstract: PBSS4350SPN PBSS4350SS PBSS5350SS MARKING SMD PNP TRANSISTOR FR TRANSISTOR SMD MARKING CODE 42
Text: PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 - 5 April 2007 Product , Semiconductors 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 5. Limiting values Table 6. Limiting , of 19 PBSS4350SPN NXP Semiconductors 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor , PBSS4350SPN NXP Semiconductors 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 6. Thermal , 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 006aaa810 103 duty cycle = Zth(j-a) (K/W


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PDF PBSS4350SPN OT96-1 PBSS4350SS PBSS5350SS PBSS4350SPN 4350SPN PBSS4350SS PBSS5350SS MARKING SMD PNP TRANSISTOR FR TRANSISTOR SMD MARKING CODE 42
1998 - BSH202

Abstract: SC18
Text: -2.9 V - 0.4 40 - 2.7 V -2.5 V 20 -0.2 0 0 25 50 75 100 125 0 150 , Philips Semiconductors Product specification P-channel enhancement mode MOS transistor , power transistor . This device has low threshold voltage and extremely fast switching making it ideal , Semiconductors Product specification P-channel enhancement mode MOS transistor BSH202 ELECTRICAL , Tj = 150°C - - V -1 - 0.4 0.2 - VDS = VGS; ID = -1 mA Tj = 150°C RDS(ON) TYP


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PDF BSH202 BSH202 SC18
GPT05108

Abstract: No abstract text available
Text: SIEMENS Package Outlines P-T0220-7-1 (Plastic Transistor Single Outline) TLE 5204 110 + 0.4 , side transistor is turned-ON High side transistor is turned-OFF High side transistor is turned-ON Low side transistor is turned-OFF Semiconductor Group 3 1998-02-01 SIEMENS Monitoring , supply voltage is below the operating range. A monitoring circuit for each output transistor detects whether the particular transistor is active and in this case prevents the corresponding source transistor


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PDF Q67000-A9177 P-T0220-7-1 necessa8-02-01 GPT05108 GPT05874 GPT05108
kyocera oscillator

Abstract: transistor 5633 transistor P84 transistor KF 517
Text: Output N-channel transistor OFF 2.7 to 6.0 2.7 to 6.0 2.7 to 6.0 Input high-level voltage V ih (1 , disable Output disable 2.7 to 6.0 2.7 to 6.0 V il (3) N-channel transistor OFF 2.7 to 6.0 Vss 0.25V dd V il(4) N-channel transistor OFF Output N-channel transistor OFF 2.7 to 6.0 , 2.7 to 6.0 2.7 to 6.0 MHz FmCF(2) CF1.CF2 2.94 3 3.06 FmRC FsXtal XT1, XT2 0.4 , Ports 1, 2, 3, 4, 5 ·Output disabled · Pull-up MOS transistor OFF. V in = V dd 2.7 to 6.0 1


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PDF LC865032A, 65028A, 65024A LC865032A/28A/24A LC865032A/28 16-bit 13-source 10-vectored 3071-DIP6r kyocera oscillator transistor 5633 transistor P84 transistor KF 517
2010 - HD radio nxp application

Abstract: BUJD203AD
Text: BUJD203AD NPN power transistor with integrated diode Rev. 01 - 27 September 2010 Product data , power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable , V BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 2. Pinning , - 27 September 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 001aac000 10 VCC IC (A) LC VCL(CE


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PDF BUJD203AD OT428 HD radio nxp application BUJD203AD
2002 - 4001 IC

Abstract: MC 7210 camera circuit diagram voltage regulator 78 series 3 pin CS8323 8327 transistor
Text: transistor to be employed. Therefore, determine the optimum value through experiments. VDD-0.7 (Rb= Ib 0.4 , equipment. For applications requiring a high output current, products used with an external transistor (S , (a transistor is needed for the S-8327 Series.) · · · · · · · · Oscillation frequency: 30 kHz, 50 kHz, 100 kHz, and 250 kHz Software start function is built-in Shutdown function External transistor type is , ) (S-8327 only) (S-8323 / 7) (S-8323 / 7) Power transistor 3: Built-in switch. 7: External


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PDF S-8323/8327 S-8323 4001 IC MC 7210 camera circuit diagram voltage regulator 78 series 3 pin CS8323 8327 transistor
2000 - Not Available

Abstract: No abstract text available
Text: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 - 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using , MOSFET Philips Semiconductors PHD24N03LT N-channel enhancement mode field-effect transistor 5 , reserved. Product specification Rev. 02 - 27 July 2000 2 of 13 Philips Semiconductors PHD24N03LT N-channel enhancement mode field-effect transistor 120 Pder (%) 03aa16 03aa24 100


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PDF PHD24N03LT PHD24N03LT OT428 OT428,
kn transistor

Abstract: T04 943 LC865024A LC865028A LC865032A Kyocera kbr p23 transistor QFP64E transistor 5633 6P45
Text: €¢ P71 • RES (Schmitt) Output N-channel transistor OFF 2.7 to 6.0 0.75Vdd Vdd Vih(4) P70 Watchdog timer Output N-channel transistor OFF 2.7 to 6.0 0.9Vdd Vdd V,h(5) • P74 • Port 8 Output N-channel transistor OFF 27 to 6.0 0.75Vdd Vdd Vih(6) Ports 3, 4, 5 of CMOS Output disable 4.0 to 6.0 , €¢ RES (Schmitt) N-channel transistor OFF 2.7 to 6.0 Vss 0.25Vdd Vil(4) P70 Watchdog timer N-channel transistor OFF 2.7 to 6.0 Vss 0.8Vdd -1.0 Vil(5) • P74 • Port 8 Output N-channel transistor OFF 2.7


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PDF LC865032A, 65028A, 65024A LC865032A/28 LC865032A/28A/24A) 16-bit 13-source 10-vectored 3159-QFP64E kn transistor T04 943 LC865024A LC865028A LC865032A Kyocera kbr p23 transistor QFP64E transistor 5633 6P45
1998 - BSH103 MARKING

Abstract: TRANSISTOR SMD MARKING CODE DK BSH103 TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8
Text: - - - - - - 83 27 14 2100 95 670 TYP. BSH103 MAX. - - 100 ±100 0.4 0.5 0.6 - - - - - - UNIT , mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete , mode MOS transistor FEATURES · Very low threshold · High-speed switching · No secondary breakdown · , DESCRIPTION handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a , 80 °C VGS = 2.5 V; ID = 0.5 A Ts = 80 °C CAUTION VGD = 0; IS = 0.5 A CONDITIONS - - - 0.4 - - - MIN


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PDF M3D088 BSH103 SC13b MAM273 BSH103 BSH103 MARKING TRANSISTOR SMD MARKING CODE DK TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8
2010 - Not Available

Abstract: No abstract text available
Text: BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product , NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK , collector-emitter sustaining voltage - V BUJD203AD NXP Semiconductors NPN power transistor with , legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 001aac000 10 VCC


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PDF BUJD203AD OT428
2002 - transistor 8323

Abstract: No abstract text available
Text: transistor to be employed. Therefore, determine the optimum value through experiments. VDD-0.7 (Rb= Ib 0.4 , equipment. For applications requiring a high output current, products used with an external transistor (S , (a transistor is needed for the S-8327 Series.) · · · · · · · · Oscillation frequency: 30 kHz, 50 kHz, 100 kHz, and 250 kHz Software start function is built-in Shutdown function External transistor type is , ) (S-8323 / 7) Power transistor 3: Built-in switch. 7: External transistor 2. Function List V /V


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PDF S-8323/8327 S-8323 transistor 8323
71009 SB

Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
Text: bSE T > m 711DñSb 0DL.3Q77 71^ BIPHIN BLV98CE UHF power transistor FEATURES • Internal Input , transistor in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All , Manufacturer Philips Semiconductors t , S E ]> 711002b DDb3D7ö bTS ■PHINProductspecification UHF power transistor BLV98CE MECHANICAL DATA Dimensions in mm Torque on screw: 2.25_ min 1<2x) 9.15 3.25 >.85


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PDF BLV98CE OT-171 711002b 00b3QÃ 71009 SB transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
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