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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor smd ZR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: ZR pulses with respect to time and transfers measured data to the processor. The east/west port , circuitry monitors inputs SS, ZR and HA2EN using comparators. The start-up circuitry has its own power and , output drives the diode modulator via a switched small-signal transistor . After the integration of the , , the variable storage time of the horizontal deflection stage transistor is compensated (02 control , level. The start-up circuitry supplies the horizontal deflection stage transistor with control signals


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PDF 100-/120-Hz Q67100-H8382 P-DIP-40-1 fl235b05 P-LCC-44-1 fl23Sfc A235b05
1999 - LM317 SMD

Abstract: npn smd 2n2222 smd transistor 2N2222 SMD ad3303 SMD CODE LM317 SmD TRANSISTOR s2e SMD lm317 PALCE22V10-J 2n2222 smd SMD Transistor s2A
Text: performance is tabulated below. · Display LEDs DS1, "ZL" and DS2, " ZR " are provided to show that the , PREEMPH U3A 74HC00D 1 2 3 CCLK CDATA ZR DVDD ZL SEL RST CLATCH IREF , ZL MUTE ON MUTE HDR1 DVDD 1 ZR CDATA EXT C I/F NOTE: CCLK = AGND SET Ib = , 100 100nF 10-PIN HDR SMD 0805 SMD 0805 10-Pin Vertical Thru Hole, Shrouded Header ± 1%, 100 mW, ± 100 ppm/°C MF Chip Resistor ± 10%, 50 V dc, X7R Ceramic Chip Capacitor 15 10k SMD


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PDF 24-Bit EVAL-AD1853EB AD1853 EVAL-AD1853-EB) 10-pin 10-pin AD1853 LM317 SMD npn smd 2n2222 smd transistor 2N2222 SMD ad3303 SMD CODE LM317 SmD TRANSISTOR s2e SMD lm317 PALCE22V10-J 2n2222 smd SMD Transistor s2A
2001 - transistor smd ZR

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE transistor SMD BP smd code marking sot23 philips transistor smd code smd transistor marking zr 2PC4617SJ
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor , specification NPN general purpose transistor 2PC4617J PINNING FEATURES · Power dissipation comparable , and multimedia. handbook, halfpage 3 3 DESCRIPTION 1 NPN transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: 2PA1774J. 1 2 2 Top view MAM410 MARKING TYPE NUMBER MARKING CODE 2PC4617QJ ZQ 2PC4617RJ ZR 2PC4617SJ ZS


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PDF M3D425 2PC4617J SCA73 613514/03/pp8 transistor smd ZR MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE transistor SMD BP smd code marking sot23 philips transistor smd code smd transistor marking zr 2PC4617SJ
ELECTRONIC COUNTERS CONTROL

Abstract: transistor ZR
Text: , electric or automatic Outputs electronic NPN / PNP transistor switch 1 www.baumer.com/motion , circuit PNP-switching transistor Open collector Switching voltage 24 VDC ±20 % Switching current max. 10 mA (AC) 50 mA (DC) NPN-switching transistor Open collector Switching voltage max. 2 , "487"X 33 39 -""""""Î Ugpuqt uwrrn{ VzF TzF TU454 3: - ZR /tgugv 3; ZR , ; : R4 Qwvrwv 9 8 7 R3 6 Interface RS232 Eqwpv ZR /tgugv ZR /uvqr1"j/eqwpvgt


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PDF NE212 RS232, RS422, RS485 NE212 TU454 TU644 RS422 ELECTRONIC COUNTERS CONTROL transistor ZR
1998 - MSA4709A

Abstract: 24v 8 channel Relay driver transistor ZR Equivalent of transistor tip 420 tip 420 transistor transister pabx relay driver circuit using transistor TIP 22 transistor IL400
Text: HYB ZR A NB ¡ Semiconductor SCN IL BLOCK DIAGRAM CDP CB 4WR Ring Current DET Ring Current Drive Amp. ZFR ZR 4WR VBS Relay Driver BF VBB RSI CN RSO RY , VEE 12 19 IL 4WR 13 18 CDP BN 14 17 SEL ZR 15 16 SCN 30-Pin Plastic Shrink DIP , current sensing input is connected to the emitter of NPN Darlington transistor and the power resistor REA. 4 NB The base drive output for the NPN Darlington transistor . 5 RSO 6 CN


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PDF E2A0032-16-X0 MSA4709A MSA4709A SDIP30-P-400-1 24v 8 channel Relay driver transistor ZR Equivalent of transistor tip 420 tip 420 transistor transister pabx relay driver circuit using transistor TIP 22 transistor IL400
smd transistor marking n3

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
Text: DISCRETE SEMICONDUCTORS 2PC4617J NPN general purpose transistor Preliminary specification , Semiconductors Preliminary specification NPN general purpose transistor FEATURES · Power dissipation , and multimedia. n3 iU Top view DESCRIPTION NPN transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: 2PA1774J. u* MAM410 MARKING TYPE NUMBER 2PC4617JQ 2PC4617JR 2PC4617JS MARKING CODE ZQ ZR ZS Fig.1 Simplified outline (SC-89; SOT490) and symbol


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PDF 2PC4617J 2PC4617J SC-89 OT490) SCA63 5002/00/02/pp8 smd transistor marking n3 MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
1999 - transistor smd ZR

Abstract: SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al 2PC4617JR SC-89 2PC4617JQ 2PC4617J
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor , Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING · Power , areas such as telecom and multimedia. handbook, halfpage 3 3 DESCRIPTION 1 NPN transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: 2PA1774J. 1 2 2 Top view MAM410 MARKING TYPE NUMBER MARKING CODE 2PC4617JQ ZQ 2PC4617JR ZR


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PDF M3D425 2PC4617J SCA63 115002/00/02/pp8 transistor smd ZR SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al 2PC4617JR SC-89 2PC4617JQ 2PC4617J
JAM transister

Abstract: A4709A
Text: d u c to r g SCN SEL -o- o-o- RG RB 73 > ZX Zx Zb Zt HYB ZR 4WR Z fr n 4WS ZR -O 4WR -o VBS Relay Driver - < H 'B F RSI RSO< Vbb or n Vee ^ ri Vcc : r ^ , ZR [T5 CDP 17] SEL Te] scn 30-Pin Plastic Shrink DIP Note: NC: N o connect pin , The Ring current sensing input is connected to the emitter of NPN Darlington transistor and the power resistor REA. The base drive output for the NPN Darlington transistor . Relay driver current sink terminal


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PDF E2A0032-16-XO MSA4709A A4709A SDIP30-P-400-1 JAM transister
CA3031

Abstract: CA3005 or CA3006 inverted welding machine schematic diagram CA3004 CA3005 RCA transistor CA3034V1 RCA Transistors transistor bf 175 ca3012
Text: regions to form transistors. Fig. 4 — Addition of metallized con­ tacts to transistor elements , chip containing transistor , resistor, and capacitor. COMPARISON OF DISCRETE AND INTEGRATED , value required for the transistor base diffusion. The value of the resistor then depends primarily on , requirements of different inte­ grated components are as follows: Component Relative Area Transistor 1 , high-frequency silicon transistor , less than 10 per cent of the wafer area is used by the active device. The


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PDF
Not Available

Abstract: No abstract text available
Text: www.redlion.net MODEL ZR - C-FACE ENCODER WITH NPN OPEN COLLECTOR OUTPUT ï¬ï€ ï€ THRU-SHAFT DESIGN FOR , ï¬ï€ ï€ C-FACE GASKET KIT INCLUDED DESCRIPTION SPECIFICATIONS The Model ZR C-face encoder is , C-face motors. The ZR contains a precision bearing and internal coupling that virtually eliminates , draw typical, 100 mA maximum. 2. OUTPUT: NPN Open Collector transistor , VOH = 40 VDC max.; 100 mA , microsecond Open Collector Output Wiring The ZR series of sensors have open collector outputs. An open


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PDF LP0747 Ahmedabad-382480
kyl 1020

Abstract: Darlington transister A4709A 1l400 MSA4709 MSA4709ASS oki relay MSA4709A AL24 pnp transister symbol
Text: IF RG QT 20] VBS Vee m H IL 4WR 03 18] CDP BN 04 o 17] SEL ZR 05 H3CN 30-Pin Plastic Shrink , RSO CN RY CDC RSI RB RG Vee 4WR BN ZR SCN Description Battery supply, -48 Vor -24 V input , NPN Darlington transistor and the power resistor REA. _ The base drive output for the NPN Darlington transistor . Relay driver current sink terminal._ Battery noise rejection capacitor input. This capacitors , input. 27 P8 The base drive output for the PNP Darlington power transistor . 28 PE The Tip current


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PDF MSA4709A MSA4709A 30-pin 2SB1061 2SD1502 4AE11 72m2md b72M24G kyl 1020 Darlington transister A4709A 1l400 MSA4709 MSA4709ASS oki relay AL24 pnp transister symbol
KY2 transistor

Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
Text: Protection Interface Circuit HYB ZfR RIN G o - ' 4W R Zr o 4W R Ring Current DET , 03 B N 04 ZR 05 o 30-Pin Plastic Shrink DtP Note: NC: No connect pin MSA4708A PIN , Darlington transistor and the power resistor REA._ The base drive output for the NPN Darlington transistor ._ Relay driver current sink terminal , RSI RB R G V ee 10 11 12 13 "Ì4~ 15 4WR BN ZR 16 3ÜJJ 348 O K I SemxxinductOT


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PDF MSA4709A MSA4709A 30-pin SDJP30-P-4bb 2SB1061 2SD1502 4AE11 KY2 transistor transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
Not Available

Abstract: No abstract text available
Text: quantization of fine conversion. The <£2 port further measures the position of the ZR pulses with respect to , inputs SS, ZR and HA2EN using comparators. The start-up circuitry has its own power and clock pulse , output drives the diode modulator via a switched small-signal transistor . After the integration of the , addition, the variable storage tim e of the horizontal deflection stage transistor is compensated ( transistor with


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PDF 100-/120-Hz Q67100-H8382 P-DIP-40 uetou62
2001 - MAX1480

Abstract: MAX3157CAI pin diagram of RS 485 MAX3157 MAX3157CPI MAX3157EAI MAX3157EPI
Text: VCC 0.1µF MICRO DE DI RE RO MAX3157 GND C3 1µF A B Y Z YR ZR AR BR RT , ).-8V to +12.5V Termination Connections (YR, ZR , AR, BR) Relative to Cable Ground (ISOCOM , . ELECTRICAL CHARACTERISTICS (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM, C1 = C2 = 0.047µF, C3 = C4 = 1µF, TA , High CMRR RS-485 Transceiver with ±50V Isolation (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM , VISOCOM) 12V, YR = ZR = ISOCOM -5.0 8.0 DE = GND, VCC = GND or 5.25V, -7V (VIN VISOCOM) 12V


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PDF RS-485 EIA/TIA-485 28-Pin MAX3157CAI MAX3157EAI MAX3157CPI MAX3157 MAX1480 MAX3157CAI pin diagram of RS 485 MAX3157 MAX3157CPI MAX3157EAI MAX3157EPI
2001 - pin diagram of RS 485

Abstract: MAX1480 MAX3157 MAX3157CAI MAX3157CPI MAX3157EAI MAX3157EPI MAX3157CAI T
Text: VCC 0.1µF MICRO DE DI RE RO MAX3157 GND C3 1µF A B Y Z YR ZR AR BR RT , ).-8V to +12.5V Termination Connections (YR, ZR , AR, BR) Relative to Cable Ground (ISOCOM , . ELECTRICAL CHARACTERISTICS (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM, C1 = C2 = 0.047µF, C3 = C4 = 1µF, TA , High CMRR RS-485 Transceiver with ±50V Isolation (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM , VISOCOM) 12V, YR = ZR = ISOCOM -5.0 8.0 DE = GND, VCC = GND or 5.25V, -7V (VIN VISOCOM) 12V


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PDF RS-485 EIA/TIA-485 28-Pin MAX3157CAI MAX3157EAI MAX3157CPI MAX3157 pin diagram of RS 485 MAX1480 MAX3157 MAX3157CAI MAX3157CPI MAX3157EAI MAX3157EPI MAX3157CAI T
2001 - Not Available

Abstract: No abstract text available
Text: RT = 100Ω Z RS-485 NODE YR ZR REMOTE MICRO H/F TXP AR BR GND RG C1LO , ).-8V to +12.5V Termination Connections (YR, ZR , AR, BR) Relative to Cable Ground (ISOCOM , . ELECTRICAL CHARACTERISTICS (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM, C1 = C2 = 0.047µF, C3 = C4 = 1µF , High CMRR RS-485 Transceiver with ±50V Isolation (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM , ‰¤ (VIN VISOCOM) ≤ 12V, YR = ZR = ISOCOM -5.0 8.0 DE = GND, VCC = GND or 5.25V, -7V ≤ (VIN


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PDF RS-485 MAX3157 RS-485/RS-422 MAX1480 MAX3157
bch limit switch ll1

Abstract: SDA9064 EP-613 power supply EP-603 power supply sda 20160 ep 613 sda20160 EP-613 DC POWER SUPPLY VL-609 27mhz remote control transmitter and receiver ci
Text: for amplitute quantization of fine conversion. The 2 port further measures the position of the ZR , inputs SS, ZR and HA2EN using comparators. The start-up circuitry has its own power and clock pulse , drives the diode modulator via a switched small-signal transistor . After the integration of the output , variable storage time of the horizontal deflection stage transistor is compensated (O2 control loop), while , start-up circuitry supplies the horizontal deflection stage transistor with control signals In the standby


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PDF DQ53E 100-/120-Hz Q67100-H8382 P-DIP-40 fl23SbOS 0G5332Ö 235bQ5 bch limit switch ll1 SDA9064 EP-613 power supply EP-603 power supply sda 20160 ep 613 sda20160 EP-613 DC POWER SUPPLY VL-609 27mhz remote control transmitter and receiver ci
2003 - MAX6138BEXR50-T

Abstract: MAX6138AEXR33 T MAX6138
Text: Change VR/IR TA = +25°C V mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = , 15mA 2.5 8.0 0.8 VR/IR mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = , IR 15mA 2.5 8.0 mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = 120Hz, IAC , VR/IR CONDITIONS TA = +25°C UNITS V mV Reverse Dynamic Impedance (Note 3) ZR , 0.8 ZR 0.1%, 25ppm, SC70 Shunt Voltage Reference with Multiple Reverse Breakdown


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PDF 25ppm, 25ppm/ 10kHz) SC70-3 MAX6138 EXR25-T EXR33-T MAX6138BEXR50-T MAX6138AEXR33 T
2006 - marking code MS SOT323

Abstract: No abstract text available
Text: MSD1819A-RT1 Preferred Device General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features · · · · · High hFE, 210-460 Low VCE(sat , epoxy printed circuit board using the minimum recommended footprint. ZR M G G 1 ZR = Device Code


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PDF MSD1819A-RT1 SC-70/SOT-323 MSD1819A-RT1/D marking code MS SOT323
2004 - MAX6138AEXR33 T

Abstract: SC70-3
Text: 4 25 ppm/°C IRMIN IR 1mA 0.3 1.0 1mA IR 12mA 2.5 8.0 ZR IR = 1mA , 15mA 2.5 8.0 0.8 VR/IR mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = , IR 15mA 2.5 8.0 mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = 120Hz, IAC , VR/IR CONDITIONS TA = +25°C UNITS V mV Reverse Dynamic Impedance (Note 3) ZR , IRMIN IR 1mA mV 1mA IR 15mA 8.0 ZR IR = 1mA, f =120Hz, IAC = 0.1IR 0.3 eN


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PDF 25ppm, MAX6138 25ppm/ SC70-3 MAX6138 MAX6138AEXR33 T SC70-3
2003 - MAX3157

Abstract: MAX3158CAI MAX1480 MAX3158 MAX3158CPI MAX3158EAI MAX3158EPI
Text: Y Z YR ZR AR BR RT = 100 RS-485 NODE REMOTE MICRO 0.1µF RG C1LO C1HI C2LO , ).-8V to +12.5V Termination Connections (YR, ZR , AR, BR) Relative to Cable Ground (ISOCOM , . ELECTRICAL CHARACTERISTICS (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM, C1 = C2 = 0.047µF, C3 = C4 = 1µF, TA , mV High CMRR RS-485 Transceiver with ±60V Isolation (VCC = +5V ±5%, YR = ZR = AR = BR = ISOCOM , , VCC = GND or 5.25V, -7V (VIN VISOCOM) +12V, YR = ZR = ISOCOM -5.0 +8.0 DE = GND, VCC = GND


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PDF RS-485 EIA/TIA-485 28-Pin MAX3158CAI MAX3158EPI MAX3158EAI MAX31ormation MAX3158 MAX3157 MAX3158CAI MAX1480 MAX3158 MAX3158CPI MAX3158EAI MAX3158EPI
2003 - Not Available

Abstract: No abstract text available
Text: DE DI RE RO MAX3158 RT = 100Ω Z YR RS-485 NODE REMOTE MICRO 0.1µF ZR AR , ).-8V to +12.5V Termination Connections (YR, ZR , AR, BR) Relative to Cable Ground (ISOCOM , periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VCC = +5V ±5%, YR = ZR = AR = BR = , V mV High CMRR RS-485 Transceiver with ±60V Isolation (VCC = +5V ±5%, YR = ZR = AR = BR , -0.58 +1.0 DE = GND, VCC = GND or 5.25V, -7V ≤ (VIN VISOCOM) ≤ +12V, YR = ZR = ISOCOM -5.0


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PDF RS-485 MAX3158 MAX3158 RS-485/RS-422 MAX1480
2010 - MSD1819A-RT1

Abstract: MSD1819A-RT1G
Text: MSD1819A- RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http , C Storage Temperature Range Tstg -55 to +150 C ZR M G G Stresses exceeding , printed circuit board using the minimum recommended footprint. 1 ZR = Device Code M = Date Code* G


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PDF MSD1819A- SC-70/SOT-323 MSD1819A-RT1/D MSD1819A-RT1 MSD1819A-RT1G
1988 - NEC 2561 OPTO

Abstract: NEC 2501 2561 opto NEC 10F triac 2581 OPTO NEC 2581 NEC 2532 NEC 2505 NEC 2701 NEC 2561
Text: transistor , etc.) with a light-transmittable epoxy resin medium between them. Light signals emitted by the , Detector Single transistor Standard Type Darlington-transistor Photo diode + Transistor Photo IC


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PDF P10419EJCV0SG00 NEC 2561 OPTO NEC 2501 2561 opto NEC 10F triac 2581 OPTO NEC 2581 NEC 2532 NEC 2505 NEC 2701 NEC 2561
2001 - MAX6138_25

Abstract: MAX6138BEXR50-T MAX6138EXR50-T 5050 ir led S-Shape-Load-Cell MAX6138 MAX6138_30 MAX6138_50 12205
Text: Change VR/IR TA = +25°C mV mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = , = +25°C UNITS mV mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = 120Hz, IAC , VR/IR Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = 120Hz, IAC = 0.1IR 0.3 , CONDITIONS TA = +25°C UNITS mV mV Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f , Reverse Dynamic Impedance (Note 3) ZR IR = 1mA, f = 120Hz, IAC = 0.1IR 0.5 Wideband Noise


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PDF 25ppm, 25ppm/ 10kHz) MAX6138 EXR12-T SC70-3 EXR25-T MAX6138_25 MAX6138BEXR50-T MAX6138EXR50-T 5050 ir led S-Shape-Load-Cell MAX6138_30 MAX6138_50 12205
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