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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor smd 723 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract:
Text: for the external MOSFET transistor . 3 GND Ground. 4 CS Current Sense Pin. Connect an , MIN (8) 0 .61 mH × 723 mA = = 5 . 5 μs 80 The ringing periods from primary inductance , mH 723 mA × 90 k The maximum primary turns on time: 2 POUT ( 2 INAC _ MIN 2 × LI N 2 × 181 = = 723 mA DMAX 0.5 V IN _ MIN NP T = ON × NS T RST V OUT + V D (3) = (11 , , primary winding, mosfet transistor and current sense resistor (R9). The other is secondary winding


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PDF ACT520 11-Dec-14 ACT520 130kHz
2014 - Not Available

Abstract:
Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 2 — 17 January 2014 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved , BLF8G09LS-270(G)W NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2 , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter , BLF8G09LS-270(G)W NXP Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8


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PDF BLF8G09LS-270W; BLF8G09LS-270GW BLF8G09LS-270W 8G09LS-270GW
2008 - SMD Marking Code 43a

Abstract:
Text: data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1 , hereunder is subject to the subsequent disclaimers General description PNP medium power transistor , 43115 BCX53 9332 723 00115 BCX53/DG/B2,115 BCX53,115 AS AS NA NA NA EU NA NA ASIA ASIA BCX53 BCX53-10 9332 723 00146 9336 630 60115 BCX53,146 BCX53-10,115 EU NA NA NA NA NA EU BCX53-10 BCX53-16/B BCX53 , 173 50115 9339 173 50135 9340 647 43115 9332 723 00115 9332 723 00146 9336 630 60115 9336 630 60135


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PDF BC640; BCP53; BCX53 BC640 BCP53 SC-43A SC-73 SC-62 O-243 SMD Marking Code 43a BC640 SPICE model transistor C640 to92 TRANSISTOR SMD MARKING CODE 723 marking code DG SMD Transistor BC640 smd TRANSISTOR SMD MARKING CODE 9339 A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE LF nxp Standard Marking
4 Pin SMD Hall sensors

Abstract:
Text: 0805 SMD 550 450 ~ 610 12 120 1206 SMD 540 430 ~ 610 0.04 120 2 1206 SMD 570 , and Reel Fig. 6 6 0 ~ 4.5 0.5 Transistor - Straight Leads 7 0.2 ~ 4.0 1 Transistor Bent Leads 8 0.2 ~ 15 2.5 Transistor - 9 2 ~ 25 6 PIN Photodiode , -ND. Programmable Linear Hall Effect ICs 6.0 3.7 Fig. 11 Price Each 10 25 6.86 5.28 9.40 7.23


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PDF 751-1056-1-ND 751-1056-2-ND 751-1051-1-ND 751-1051-2-ND 751-1055-1-ND 751-1055-2-ND 751-1057-ND 751-1058-ND 751-1059-ND UA-92 4 Pin SMD Hall sensors MLX90215EVA-ND SMD Hall sensors linear D smd transistor 3l US1881LSETR-ND US1881LSETR-NDNEW SMD Hall sensors linear US4881EUA-ND US5881LUA 751-1057-ND
2011 - Not Available

Abstract:
Text: transistor 7.2.3 Reliability 001aao067 106 Years 105 (1) (2) 104 (3) (4) 103 102 (5) (6 , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 - 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2


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PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H
2011 - J2735

Abstract:
Text: LDMOS transistor 7.2.3 Reliability 001aao067 106 Years 105 (1) (2) 104 (3) (4) 103 , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 - 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2


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PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H J2735 DVB-t2 61 TRANSISTOR ATC800B DVBT2 GP414 JESD625-A transistor smd 723
2013 - Not Available

Abstract:
Text: transistor 7.2.3 Reliability 001aao067 106 Years 105 (1) (2) 104 (3) (4) 103 102 (5) (6 , BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 - 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2


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PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H
2012 - MOSFET

Abstract:
Text: Type SOT- 723 VER 1.2 1 ACE1551B N-Channel Enhancement Mode Field Effect Transistor Ordering information ACE1551B XX + H Halogen - free Pb - free JM : SOT- 723 Electrical Characteristics TA , N-Channel Enhancement Mode Field Effect Transistor Packing Information SOT- 723 VER 1.2 6 ACE1551B , ACE1551B N-Channel Enhancement Mode Field Effect Transistor Description The ACE1551B combines , ACE1551B N-Channel Enhancement Mode Field Effect Transistor Note: 1. The value of RθJA is measured with


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PDF ACE1551B ACE1551B MOSFET
2015 - 2sc4617

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR , -323 SOT-523 SOT- 723 C: Collector Pin Assignment 1 2 3 B C E E B C E B C E B C E B C , -323 / SOT-523 / SOT- 723 C5G www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-081.G 2SC4617  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25 , mW Collector Power Dissipation PC SOT-23/SOT-323 200 mW SOT- 723 125 mW Junction Temperature


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PDF 2SC4617 2SA1774 2SC4617G-x-AB3-R 2SC4617G-x-AE3-R 2SC4617G-x-AL3-R 2SC4617G-x-AN3-R 2SC4617G-x-AQ3-R OT-89 OT-23 OT-323 2sc4617
2014 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA , Pin assignment: E: Emitter B: Base Package SOT-113 SOT-23 SOT-323 SOT-523 SOT- 723 C , A4GG A4BG SOT-113 / SOT-323 / SOT-523 SOT- 723 A4G www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-015.J MMBT1015  PNP SILICON TRANSISTOR


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PDF MMBT1015 150mA MMBT1815 MMBT1015G-x-AC3-R MMBT1015G-x-AE3-R MMBT1015G-x-AL3-R MMBT1015G-x-AN3-R MMBT1015G-x-AQ3-R OT-113 OT-23
2014 - sot-23 marking 113

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR  * * * * FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA , Pin Assignment: E: Emitter B: Base Package SOT-113 SOT-23 SOT-323 SOT-523 SOT- 723 C , SOT-113 / SOT-323 / SOT-523 SOT- 723 CG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-014.M MMBT1815  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM


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PDF MMBT1815 150mA MMBT1015 MMBT1815G-x-AC3-R MMBT1815G-x-AE3-R MMBT1815G-x-AL3-R MMBT1815G-x-AN3-R MMBT1815G-x-AQ3-R OT-113 OT-23 sot-23 marking 113
2014 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD DTB143E PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR , Assignment: G: GND I: IN O: OUT  Package SOT-23 SOT-323 SOT- 723 TO-92 TO-92 Pin Assignment , Tape Box Bulk MARKING SOT-23 / SOT-323 / SOT- 723 TO-92 BE3E www.unisonic.com.tw , TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25C, unless otherwise specified) PARAMETER RATING UNIT -50 V -30~+10 V -500 mA SOT-23/SOT-323 200 Power Dissipation SOT- 723 PD 125 mW TO-92 625


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PDF DTB143E DTB143EG-AE3-R DTB143EG-AL3-R DTB143EG-AQ3-R DTB143EL-T92-B DTB143EG-T92-B DTB143EL-T92-K DTB143EG-T92-K OT-23 OT-323
2014 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617  ORDERING , : Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-323 SOT-523 SOT- 723 Pin Assignment 1 , : SOT- 723 (4) G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-011.E 2SA1774  PNP EPITAXIAL SILICON TRANSISTOR


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PDF 2SA1774 2SC4617 2SA1774G-x-AE3-R 2SA1774G-x-AL3-R 2SA1774G-x-AN3-R 2SA1774G-x-AQ3-R OT-23 OT-323 OT-523 OT-723
2013 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD DTB143E PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR BUILT-IN RESISTORS 3 2 FEATURES  EQUIVALENT CIRCUIT 2 1 SOT-323 1 2 SOT- 723 , DTB143EL-AE3-R (1)Packing Type (2)Package Type (3)Lead Free  Package SOT-23 SOT-323 SOT- 723 TO , Reel (2) AE3: SOT-23, AL3: SOT-323, AQ3: SOT- 723 T92: TO-92 (3) L: Lead Free, G:Halogen Free , TRANSISTOR ABSOLUTE MAXIMUM RATING ( T A =25°C, unless otherwise specified) PARAMETER SYMBOL RATING


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PDF DTB143E OT-323 OT-723 O-263) OT-23 DTB143EL-AE3-R DTB143EG-AE3-R DTB143EL-AL3-R DTB143EG-AL3-R DTB143EL-AQ3-R
2010 - TRANSISTOR 726

Abstract:
Text: Semiconductors LDMOS L-band radar power transistor 7.2.3 Performance curves measured with = 10 %, tp = 300 , transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.2.2 7.2.3 7.2.4 , BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 - 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar , L-band radar power transistor 1.3 Applications L-band power amplifiers for radar applications in the


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PDF BLL6H1214-500 BLL6H1214-500 TRANSISTOR 726 800B BV 726 B BV 726 C
2013 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ï , SOT-323 (JEDEC TO-236) 3 3 2 1 SOT-523  2 1 SOT- 723 ORDERING , -23 SOT-323 SOT-523 SOT- 723 Pin Assignment 1 2 3 E B C E B C E B C E B C Packing , (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (2)Package Type (2) AQ3: SOT- 723 (3)Rank (3 , Technologies Co., Ltd 1 of 5 QW-R206-081.E 2SC4617  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM


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PDF 2SC4617 OT-23 2SA1774 OT-323 O-236) OT-523 OT-723 2SC4617L-x-AE3-R 2SC4617G-x-AE3-R 2SC4617L-x-AL3-R
2010 - TRANSISTOR 1300

Abstract:
Text: L-band radar power transistor 7.2.3 Performance curves measured with δ = 10 %, tp = 300 µs and f = , Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted , BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar , ) BLL6H1214-500 NXP Semiconductors LDMOS L-band radar power transistor 1.3 Applications ̈ L-band


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PDF BLL6H1214-500 BLL6H1214-500 TRANSISTOR 1300
2013 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD DTC143E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR , SOT- 723 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are , DTC143EL-AE3-R (1)Packing Type (2)Package Type (3)Lead Free  Package SOT-23 SOT-323 SOT- 723 TO , Reel (2) AE3: SOT-23, AL3: SOT-323, TQ3: SOT- 723 T92: TO-92 (3) L: Lead Free, G:Halogen Free , TRANSISTOR ABSOLUTE MAXIMUM RATINGS(T A =25°C, unless otherwise specified) PARAMETER RATINGS UNIT


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PDF DTC143E OT-23 OT-323 OT-723 DTC143EL-AE3-R DTC143EG-AE3-R DTC143EL-AL3-R DTC143EG-AL3-R DTC143EL-AQ3-R DTC143EG-AQ3-R
2000 - TRANSISTOR SMD 13W

Abstract:
Text: description is given of a 13W electronic CFL ballast ( SMD demo board PR38922 and leaded demo board PR39001 , . 12 3.2 SMD version: demo board PR38922. 12 3.2.1 PR38922 ( SMD version) . 12 3.2.2 Parts list of PR38922 ( SMD version , printed circuit boards. Printed circuit board PR38922 is a miniaturised version with SMD components


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PDF UBA2021 AN99066 AN98091) PR38922 PR39001) 230Vrms PHU2N60 PHU2N50) TRANSISTOR SMD 13W CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL
2011 - A4Y SOT23

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 LOW FREQUENCY PNP AMPLIFIER TRANSISTOR * * * * PNP SILICON TRANSISTOR FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High , -323 SOT-523 SOT- 723 Pin Assignment 1 2 3 E B C E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape , 5 QW-R206-015,G MMBT1015 MARKING PACKAGE Y SOT-23 MARKING GR PNP SILICON TRANSISTOR BL , : Halogen Free SOT-113 SOT-323 SOT-523 A4 L: Lead Free G: Halogen Free SOT- 723 A L: Lead


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PDF MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y transistor a4g NF 723 sot113
2013 - A4Y SOT23

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  * * * *  FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up , -523 SOT- 723 Pin Assignment 1 2 3 E B C E B C E B C E B C E B C Packing Tape Reel , TRANSISTOR MARKING PACKAGE MARKING GR Y SOT-23 A4Y A4G L: Lead Free G: Halogen Free SOT-113 SOT-323 SOT-523 A4 L: Lead Free G: Halogen Free SOT- 723 A BL L: Lead Free


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PDF MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y
2014 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR FEATURES * * * * Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High , Copyright © 2014 Unisonic Technologies Co., Ltd Package SOT-113 SOT-23 SOT-323 SOT-523 SOT- 723 , Tape Reel Tape Reel Tape Reel 1 of 5 QW-R206-014.L MMBT1815 NPN SILICON TRANSISTOR , -113 SOT-323 SOT-523 C4 L: Lead Free G: Halogen Free SOT- 723 C BL L: Lead Free G


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PDF MMBT1815 150mA MMBT1015 MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R
2012 - STK and STR integrated circuits

Abstract:
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 , €¢ Case pin assignment • Pinout • Marking style • Schematic diagram • Additional SMD info â , Christian Turuta Activ Active SMD components marking mar king codes databook INTRODUCTION 1. 2-pin case SMD semicondutor components 2. SOD-80 case SMD semicondutor components 3. 3-pin case SMD semicondutor components 4. SOT-223 case SMD semicondutor components 5. SOT-89 case SMD semicondutor


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PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA STK and STR integrated circuits, 2011 edition transistor 5d smd ELM85361A SMD TRANSISTOR MARKING 6B smd sot-323 marking code pa
2011 - c4g TRANSISTOR sot323

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR * * * * NPN SILICON TRANSISTOR FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High , -323 SOT-523 SOT- 723 Pin Assignment 1 2 3 E B C E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape , TRANSISTOR BL C4B L: Lead Free G: Halogen Free L: Lead Free G: Halogen Free L: Lead Free G: Halogen Free SOT-113 SOT-323 SOT-523 C4 L: Lead Free G: Halogen Free SOT- 723 C L: Lead


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PDF MMBT1815 150mA MMBT1015 MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R c4g TRANSISTOR sot323 c4g TRANSISTOR transistor C4G sot-23 free transistor transistor C4G 113 sot sot723 SOT23 MARKING 723CL TRANSISTOR NPN c4 nf
Not Available

Abstract:
Text: above 5G H z. The transistor configuration and the layout make the RL- 723 unconditionally stable. For medium frequencies (up to ~ 2Qj\IHz ) the RL- 723 acts like a current amplifier with a transresistance of , RL- 723 COMMON BASE PREAMPLIFIER 1. General Features of the R L- 723 Preamplifier · Small Size (7 , a l D e s c r ip tio n The model RL- 723 Common Base Preamplifier was developed to amplify low level , , proportional gas counters, photodiodes, etc. T he RL- 723 Preamplifier is based on a simple configuration with a


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PDF RL-723 L-723
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