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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor sd 965 Datasheets Context Search

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2n3996 equivalent transistor

Abstract: transistor sd 965
Text: , Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR , HF PS PS1 HT OAH UD SL SU φT φT1 SD Z Z1 Dimensions Millimeters Inches Min Max Min Max .345 .400 8.76 10.16 .250 6.35 .370 .437 9.40 11.10 .318 .380 8.08 9.65 .424 , flanges. 7. SU is the length of incomplete or undercut threads. 8. SD is the pitch diameter of coated , Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1. Physical dimensions for transistor


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PDF MIL-PRF-19500/374 2N3996 2N3997 2N3998 2N3999 2N3998 T4-LDS-0165 2n3996 equivalent transistor transistor sd 965
2010 - transistor sd 965

Abstract: 2n3996 equivalent transistor T1 SL 100 NPN Transistor equivalent of SL 100 NPN Transistor TRANSISTOR SL 100 2N3996 2N3998 2N3999 2N3997 190-32 UNF-2a
Text: , Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR , 6822298 PACKAGE DIMENSIONS Ltr CH A1 CD CD1 HF PS PS1 HT OAH UD SL SU T T1 SD Z Z1 , 11.10 .318 .380 8.08 9.65 .424 .437 10.77 11.10 .180 .215 4.57 5.46 .080 .110 2.03 2.79 , threads. 8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal , . Physical dimensions for transistor types 2N3996 and 2N3997 - Continued. T4-LDS-0165 Rev. 1 (100688


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PDF MIL-PRF-19500/374 2N3996 2N3997 2N3998 2N3999 2N3998 T4-LDS-0165 transistor sd 965 2n3996 equivalent transistor T1 SL 100 NPN Transistor equivalent of SL 100 NPN Transistor TRANSISTOR SL 100 2N3996 2N3999 2N3997 190-32 UNF-2a
2013 - 2n3749

Abstract: No abstract text available
Text: 2N3749 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated , incomplete or undercut threads. 10. SD is the outer diameter of coated threads. (Reference: Screw thread , CH HT CD CD1 HF E E1 A1 OAH SL SU φT φT1 SD Z Z1 Inch Millimeters Min Max Min Max 0.0320 0.458 8.13 11.63 0.250 6.35 0.318 0.380 8.08 9.65 0.380 0.437 9.65 11.10


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PDF 2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A 2n3749
2013 - Not Available

Abstract: No abstract text available
Text: 2N3749 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is , flanges. 9. SU is the length of incomplete or undercut threads. 10. SD is the outer diameter of coated , -0328, Rev. 1 (11/19/13) Dimension Symbol CH HT CD CD1 HF E E1 A1 OAH SL SU φT φT1 SD Z , 11.63 0.250 6.35 0.318 0.380 8.08 9.65 0.380 0.437 9.65 11.10 0.423 0.438 10.74 11.13


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PDF 2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A
2010 - LSP3122-3

Abstract: lsp3122 LSP312
Text: load current: 3A Low power standby mode Built-in switching transistor on chip TO220-5LTO252-5L and , step-down DC/DC converter, and own the ability of driving a 3A load without additional transistor component , -220 package 5-lead TO252 package and a 5-lead TO-263 package. (2) TO252-5L (Top View) 5 SD 4 FB 3 GND 2 OUTPUT 1 VIN 5 4 3 2 1 Metal Tab GND SD FB GND OUTPUT VIN APPLICATIONS Simple High-efficiency , ) TO220-5L (Top View) Metal Tab Gnd (3) TO263-5L (Top View) 5 4 3 2 1 SD FB GND OUTPUT VIN


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PDF LSP3122 150KHZ O220-5LTO252-5L O263-5L LSP3122 O252-5L 270TYP. LSP3122-3 LSP312
2010 - LSP3122

Abstract: LSP3122-3 x12v
Text: load current: 3A Low power standby mode Built-in switching transistor on chip TO220-5LTO252-5L and , step-down DC/DC converter, and own the ability of driving a 3A load without additional transistor component , -220 package 5-lead TO252 package and a 5-lead TO-263 package. (2) TO252-5L (Top View) 5 SD 4 FB 3 GND 2 OUTPUT 1 VIN 5 4 3 2 1 Metal Tab GND SD FB GND OUTPUT VIN APPLICATIONS Simple High-efficiency , ) TO220-5L (Top View) Metal Tab Gnd (3) TO263-5L (Top View) 5 4 3 2 1 SD FB GND OUTPUT VIN


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PDF LSP3122 150KHZ O220-5LTO252-5L O263-5L LSP3122 O252-5L 270TYP. LSP3122-3 x12v
01903

Abstract: diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
Text: -19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR , NPN, SILICON , FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59). 3 MIL-PRF-19500/315F Dimension , 11.89 HT - 0.250 - 6.35 CD 0.318 0.380 8.08 9.65 CD1 0.380 0.437 9.65 11.10 HF 0.423 0.438 10.74 11.13 E 0.125 0.165 3.18 4.19 , T1 0.040 0.070 1.02 1.78 SD 0.190-32UNF-2A 4 10 4 PS1 0.090 0.110


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PDF MIL-PRF-19500/315F MIL-S-19500/315E 2N2880, 2N3749, MIL-PRF-19500. 01903 diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
2009 - 12V 2A regulator

Abstract: LSP3122A LSP3122
Text: load current: 3A Low power standby mode Built-in switching transistor on chip TO220-5LTO252-5L and , step-down DC/DC converter, and own the ability of driving a 3A load without additional transistor component , -220 package 5-lead TO252 package and a 5-lead TO-263 package. (2) TO252-5L (Top View) 5 SD 4 FB 3 GND 2 OUTPUT 1 VIN 5 4 3 2 1 Metal Tab GND SD FB GND OUTPUT VIN APPLICATIONS Simple High-efficiency , ) TO220-5L (Top View) Metal Tab Gnd (3) TO263-5L (Top View) 5 4 3 2 1 SD FB GND OUTPUT VIN


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PDF LSP3122 150KHZ O220-5LTO252-5L O263-5L LSP3122 O252-5L 270TYP. 12V 2A regulator LSP3122A
3122-adj

Abstract: 3122 adj fsp3122 transistor code 274 fsp*3122 FSP3122-ADJ 40v input to 5V 3A converter fsp312 150Khz, 3A PWM Buck Switching RegulatoR converter 72 v to 12 v
Text: Output load current: 3A Low power standby mode Built-in switching transistor on chip TO220 , additional transistor component. Due to reducing the number of external component, the board space can be , -lead TO-263 package. (2) TO252-5L (Top View) (Top View) 5 SD 5 SD 4 FB 4 FB 3 , (3) TO263-5L (Top View) 5 SD 4 FB 3 GND 2 OUTPUT 1 VIN Symbol 1 2 3 4 5 Name Vin Output Gnd FB SD Descriptions Operating Voltage Input Switching Output


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PDF 150KHZ FSP3122 O220-5LTO252-5L O263-5L O220-5L FSP3122 O252-5L 3122-adj 3122 adj transistor code 274 fsp*3122 FSP3122-ADJ 40v input to 5V 3A converter fsp312 150Khz, 3A PWM Buck Switching RegulatoR converter 72 v to 12 v
2010 - LSP3123

Abstract: 12V 3A regulated power supply circuit diagram 12V DC converter circuit diagram
Text: can be up to 22V Output load current: 3A Low power standby mode Built-in switching transistor on , step-down DC/DC converter, and own the ability of driving a 3A load without additional transistor , PIN CONFIGURATION (1) TO220-5L (2) TO263-5L (Top View) (Top View) 5 SD 4 FB 4 FB 3 GND 3 GND 2 OUTPUT 1 VIN 5 SD 2 OUTPUT 1 VIN Metal Tab Gnd Metal , OUTPUT FB 4 SD Symbol TO220/TO263 PDIP 1 1 2 2 3 5~8 4 3 5 4 1/12 Name


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PDF LSP3123 150KHZ O220-5LTO263-5L LSP3123 12V 3A regulated power supply circuit diagram 12V DC converter circuit diagram
2009 - transistor sd 965

Abstract: LSP3123 5PIN BUCK 150Khz, 3A PWM Buck Switching RegulatoR
Text: load current: 3A Low power standby mode Built-in switching transistor on chip TO220-5LTO263-5L and , DC/DC converter, and own the ability of driving a 3A load without additional transistor component , -5L (Top View) 5 SD 4 FB 3 GND 2 OUTPUT 1 VIN (2) TO263-5L (Top View) 5 4 3 2 1 SD FB GND OUTPUT VIN Metal Tab Gnd Metal Tab Gnd (3) PDIP8L (Top View) GND GND 8 7 GND 6 GND 5 1 2 3 4 SD VIN OUTPUT FB Symbol TO220/TO263 PDIP 1 1 2 2 3 5~8 4 3 5 4 Name Vin Output Gnd FB SD


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PDF LSP3123 150KHZ O220-5LTO263-5L LSP3123 transistor sd 965 5PIN BUCK 150Khz, 3A PWM Buck Switching RegulatoR
2009 - Not Available

Abstract: No abstract text available
Text: can be up to 22V Output load current: 3A Low power standby mode Built-in switching transistor on , a step-down DC/DC converter, and own the ability of driving a 3A load without additional transistor , PIN CONFIGURATION (1) TO220-5L (2) TO263-5L (Top View) (Top View) 5 SD 4 FB 4 FB 3 GND 3 GND 2 OUTPUT 1 VIN 5 SD 2 OUTPUT 1 VIN Metal Tab Gnd Metal , OUTPUT FB 4 SD Symbol TO220/TO263 PDIP 1 1 2 2 3 5~8 4 3 5 4 1/12 Name


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PDF LSP3123 150KHZ 150KHz O220-5Lï O263-5L LSP3123
3123-50

Abstract: 3123-VV 3123-33 TO220- 4 L PWM SWITCH TO263 7 1 LAND PATTERN FSP3123 12v to 3V 3A converter heat sink to220 fsp312 3123-ADJ
Text: Output load current: 3A Low power standby mode Built-in switching transistor on chip TO220 , step-down DC/DC converter, and own the ability of driving a 3A load without additional transistor , (1) TO220-5L (2) TO263-5L (Top View) (Top View) 5 SD 4 FB 4 FB 3 GND 3 GND 2 OUTPUT 1 VIN 5 SD 2 OUTPUT 1 VIN Metal Tab Gnd Metal Tab Gnd (3 , SD Symbol TO220/TO263 PDIP 1 1 2 2 3 5~8 4 3 5 4 Name Descriptions Vin


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PDF 150KHZ FSP3123 O220-5LTO263-5L FSP3123 3123-50 3123-VV 3123-33 TO220- 4 L PWM SWITCH TO263 7 1 LAND PATTERN 12v to 3V 3A converter heat sink to220 fsp312 3123-ADJ
2011 - LSP3120

Abstract: lsp3120-5 LSP3120-5V transistor sd 965 52KHZ
Text: : 3A Low power standby mode Built-in switching transistor on chip TO220-5L,TO263-5L packages GENERAL , ability of driving a 3A load without additional transistor component. Due to reducing the number of , Positive to negative converter PIN CONFIGURATION (1) TO220-5L (Top View) (Top View) 5 SD FB GND OUTPUT VIN 5 SD 4 FB 3 GND 2 OUTPUT 1 VIN 4 3 2 1 Metal Tab Gnd Metal Tab Gnd Symbol 1 2 3 4 5 Name Vin Output Gnd FB SD Operating Voltage Input Switching Output Ground Output Voltage Feedback


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PDF LSP3120 52KHZ O220-5L O263-5L LSP3120 lsp3120-5 LSP3120-5V transistor sd 965
2009 - Not Available

Abstract: No abstract text available
Text: can be up to 40V Output load current: 3A Low power standby mode Built-in switching transistor on , DC/DC converter, and own the ability of driving a 3A load without additional transistor component , CONFIGURATION (1) TO220-5L (2) TO263-5L (Top View) (Top View) 5 SD 4 FB 3 GND 3 GND 2 OUTPUT 2 OUTPUT 1 VIN 1 VIN 5 SD 4 FB Metal Tab Gnd Symbol 1 2 3 4 5 Metal Tab Gnd Name Vin Output Gnd FB SD Descriptions Operating Voltage Input Switching


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PDF LSP3120 52KHZ 52KHz O220-5L O263-5L LSP3120
2009 - LSP3122A

Abstract: LSP3122 transistor sd 965 5l 0380 LSP312 5VVIN40V
Text: voltage can be up to 40V Output load current: 5A Low power standby mode Built-in switching transistor on , CONFIGURATION (Top View) 5 SD 4 FB 3 GND 2 OUTPUT 1 VIN The LSP3122A series are monolithic IC that design , transistor component. Due to reducing the number of external component, the board space can be saved easily , a standard 5-lead TO-220 package and a 5-lead TO-263 package. (2) TO263-5L (Top View) 5 4 3 2 1 SD , Output Gnd FB SD Descriptions Operating Voltage Input Switching Output Ground Output Voltage Feedback


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PDF LSP3122A 300KHZ O220-5L O263-5L LSP3122A LSP3122 transistor sd 965 5l 0380 LSP312 5VVIN40V
2009 - LSP3120

Abstract: transistor sd 965 lsp3120-5v LSP3120-ADJ lsp3120-5 5PIN BUCK LSP3120-3 40v input to 5V 3A converter TO220- 4 L PWM SWITCH
Text: can be up to 40V Output load current: 3A Low power standby mode Built-in switching transistor on , DC/DC converter, and own the ability of driving a 3A load without additional transistor component , ) TO220-5L (2) TO263-5L (Top View) (Top View) 5 SD 4 FB 3 GND 3 GND 2 OUTPUT 2 OUTPUT 1 VIN 1 VIN 5 SD 4 FB Metal Tab Gnd Symbol 1 2 3 4 5 Metal Tab Gnd Name Vin Output Gnd FB SD Descriptions Operating Voltage Input Switching Output


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PDF LSP3120 52KHZ O220-5L O263-5L LSP3120 O263-5L transistor sd 965 lsp3120-5v LSP3120-ADJ lsp3120-5 5PIN BUCK LSP3120-3 40v input to 5V 3A converter TO220- 4 L PWM SWITCH
MP-25

Abstract: NP45N06CLC NP45N06DLC NP45N06ELC
Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Power Transistor NP45N06CLC,NP45N06DLC , Field Effect Transistor designed for high current switching applications. FEATURES • Channel , and source of the transistor serves as a protector against ESD. When this deveice acutally used, an , Voltage Vf( s-d ) If=40A,Vgs=0 1.0 V Reverse Recovery Time trr If=40A,Vgs=0 di/dt=100A//js 72 ns , representative in advance. Anti-radioactive design is not implemented in this product. M5 96.5


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PDF NP45N06CLC NP45N06DLC NP45N06ELC 25mi2 1600pF MP-25 NP45N06ELC
NP10N45DHB

Abstract: MP-25 NP10N45CHB NP10N45EHB
Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Power Transistor NP10N45CHB,NP10N45DHB , Field Effect Transistor designed for high current switching applications. FEATURES • Channel , ) 100 °C/W The diode connected between the gate and source of the transistor serves as a protector , Gate to Drain Charge Qgd 20 nC Body Diode Forward Voltage Vf( s-d ) If=10A,Vgs=0 1.0 V Reverse , . Anti-radioactive design is not implemented in this product. M5 96.5


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PDF NP10N45CHB NP10N45DHB NP10N45EHB 1600pF MP-25 NP10N45EHB
02N60S5

Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv , voltage ^ SD V VGS = 0V , /F = 1.8 A Reverse recovery time VR = 350 V, /F=/s , d/F/d f = 100 A , / f = '( V Sd ) V(BR)DSS=f (T\) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 ^ SD , 0.89 2.29 tVD. 2.18 0.76 1.01 5.97 9.14 0.46 0.98 9 2.39 0.86 1.11 6.23 9.65 0.56


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PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5
NP24N06HLB

Abstract: NP24N06ILB MOS 6502
Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Power Transistor NP24N06HLB,NP24N061LB , Transistor designed for high current switching applications. FEATURES - Channel temperature 175 degree rated , transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection , Charge Qgs 2.6 nC Gate to Drain Charge Qgd 6.0 nC Body Diode Forward Voltage Vf( s-d ) If=10A,Vgs , sales representative in advance. Anti-radioactive design is not implemented in this product. M5 96.5


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PDF NP24N06HLB NP24N061LB 70mfi 90mi2 860pF O-251 NP24N06ILB O-252 MOS 6502
MP-25

Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application. FEATURES • Channel temperature 175dgree rated , =10V Gate to Drain Charge Qgd 22 nC I D= 35A Diode Forward Voltage V F( S-D ) 1.0 V I F= 35A, VGS , . Anti-radioactive design is not implemented in this product. M5 96.5


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PDF NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD
nec 501 t

Abstract: NP12N06HLB NP12N06ILB 2130m
Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Power Transistor NP12N06HLB,NP12N06ILB , Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree , Source The diode connected between the gate and source of the transistor serves as a protector against , Body Diode Forward Voltage Vf( s-d ) If=8A,Vgs=0 1.0 1.5 V Reverse Recovery Time trr If=8A,Vgs=0 85 , . Anti-radioactive design is not implemented in this product. M5 96.5


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PDF NP12N06HLB NP12N06ILB 100mQ 130mQ 570pF O-251 NP12N06ILB O-252 nec 501 t 2130m
Not Available

Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING D E S C R IP T IO N The 2SJ463A is a switching device which can be driven , Cycle < 1 % Marking : H21 The diode connected between the gate and source of the transistor serves , SOURCE TO DRAIN DIODE FORWARD VOLTAGE V sd - Source to Drain Voltage - V 4 NEC , . Anti-radioactive design is not implemented in this product. M4 96.5


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PDF 2SJ463A 2SJ463A
1999 - diode cc 3053

Abstract: cc 3053 sd 431 transistor 2n3996 equivalent transistor tms 374c chip die npn transistor c2688 33178 2N3999 2N3997
Text: -19500/374C 01 May 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR , NPN, SILICON , for transistor types 2N3996 and 2N3997. 2 MIL-PRF-19500/374D Dimensions Symbol Inches , .400 .455 10.16 11.56 SU 8.08 3 .318 .078 9.65 1.98 T .040 .065 1.02 .040 .065 1.02 1.65 5 7 1.65 T1 3 SD .190-32 UNF-2A 4 8 Z , dimension does not include sealing flanges. 7. SU is the length of incomplete or undercut threads. 8. SD


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PDF MIL-PRF-19500/374D MIL-S-19500/374C 2N3996 2N3999, diode cc 3053 cc 3053 sd 431 transistor 2n3996 equivalent transistor tms 374c chip die npn transistor c2688 33178 2N3999 2N3997
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