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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor sc 308 Datasheets Context Search

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transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC 308 BC 309 % Preferred device Dispositif recommandé SC 309 and BC 308 transistors are intended or , statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in , 308 is grouped in three classes of small signal current gain VI - A - B La transistor BC 308ast


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
1997 - transistor sc 308

Abstract: 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
Text: PROFET® BTS 308 Smart Highside Power Switch Features Product Summary Overvoltage protection , 12.96 BTS 308 Pin Symbol Function 1 GND - Logic ground 2 IN I Input , 2.5 75 K/W BTS 308 Electrical Characteristics Parameter and Conditions Symbol at Tj = , =-40.+150°C: 4), V =5 V Operating current (Pin 1) IGND IN 2) Values min typ max mA BTS 308 , Functions Initial peak short circuit current limit (pin 3 to 5)5), IL(SCp) ( max 100 µs if VON > VON( SC


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PDF O-220AB/5 components13) systems14) transistor sc 308 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
2001 - transistor sc 308

Abstract: E3062A 410E2 BTS308 BTS410H2 E3043 E3062
Text: PROFET® BTS 308 Smart Highside Power Switch Features Product Summary Overvoltage protection , -Oct-01 BTS 308 Pin Symbol Function 1 GND - Logic ground 2 IN I Input , ): Page 2 RthJC RthJA 2003-Oct-01 BTS 308 Electrical Characteristics Parameter and Conditions , -Oct-01 BTS 308 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 24 V unless otherwise specified , VON > VON( SC ) ) Vbb = 12V Tj =-40°C: Tj =25°C: =+150°C: Tj Short circuit shutdown delay after


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PDF O-220AB/5 2003-Oct-01 transistor sc 308 E3062A 410E2 BTS308 BTS410H2 E3043 E3062
siemens profet overview

Abstract: transistor SMD t34 transistor sc 308 POWER SUPPLY BTS SIEMENS E3062A E3062 E3043 BTS410H2 BTS308 410E2
Text: SIEMENS aaasbos oo^tíD MS2 PROFET® BTS 308 Product Summary Overvoltage protection Vbb(AZ) 60 V , Initial peak short circuit current limit (pin 3 to 5)5>, ( max 100 |xs if VON > VON( SC ) ) l/bb=12 V 7 , pos. slope VON > VON( SC ), 7] =-40.+150°C: min value valid only, if input "low" time exceeds 60 us ij( SC ) 15 - 100 US Output clamp (inductive load switch off) at Vour = Vbb - VON(CL) Il= 1 A, 7] =-40.+150°C: VoN(CL) 59 67 75 V Short circuit shutdown detection voltage (pin 3 to 5) VoN( SC ) „ 3.5 V


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PDF systems14) siemens profet overview transistor SMD t34 transistor sc 308 POWER SUPPLY BTS SIEMENS E3062A E3062 E3043 BTS410H2 BTS308 410E2
fet sm 367

Abstract: No abstract text available
Text: ) protection PROFET® BTS 308 Product Summary Overvoltage protection Operating voltage On-state resistance , 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S 0 Function Logic ground BTS 308 Input , 24 V unless otherwise specified BTS 308 Symbol min | Values typ | max Unit Load , specified BTS 308 Symbol min | Values ty p Unit max Protection Functions Initial peak short circuit current limit (pin 3 to 5)5> , ( max 100 |is if Von > Von ( sc ) ) Vbb = 12V 7] =-40°C: T\ =25°C: 7


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PDF E3043 E3043 fet sm 367
gk 67

Abstract: No abstract text available
Text: ® BTS 308 Product Summary Overvoltage protection Operating voltage On-state resistance Load current , , low on failure Output to the load BTS 308 Input, activates the power switch in case of logical , unless otherwise specified BTS 308 Symbol min Values typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5)5> , ( max 100 (is if I/on > Von ( SC ) ) Vbb = 12V 7] =-40°C: 7j =25°C: 7] =+150°C: Short circuit shutdown delay after input pos. slope Von > Von( sc ), 7


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CA3081

Abstract: ca3082 Common collector configuration
Text: Transistor Arrays Description CA30B1 and CA3082 consist of seven high current (to 100mA) silicon n-p-n , 1993 Features · CA3081 - C o m m o n E m itter A rray · C A 308 2 - C o m m o n C o lle cto r Array · D irectly Drive Seven S eg m e n t In c an d e sc en t D isp lays an d U g h t Em itting D io de , for - In c an d e sc en t D isp lay D evices - LED D isplays - R elay C ontrol - T h y ris to r F , TRANSISTOR AND DIODE ARRAYS Specifications CA3081, CA3082 A b so lu te M axim um R atin g s (ta = +25°c


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PDF CA3081, CA3082 CA30B1 CA3082 100mA) CA3081 CA30B2 Common collector configuration
ic LA 7841

Abstract: LA 7841 LG 7CA 2005A transistor sc 308 2SD1145 784E S/LG 7CA
Text: Ordering number:EN 784E N0.784E 2SD1145 SANYO NPN Epitaxial Planar Silicon Transistor , 560 Case Outline 2006A (unit : mm) EIAJs SC -51 B: Base SANYO I MP C: Collector E: Emitter , O 1000 > S I o ¥ ii if 4! 3 100 308 VCE V, sojeá . , Sanyo lead formed small signal transistor case outlines are illustrated below. • All dimensions are , 5.0— «-14.0-► 0.44 & -az □ i ,4.0-» JEDEC : TO-92 EIAJ : SC -43 SANYO :NP 1 : Emitter 2


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PDF 2SD1145 100ms, 2034/2034A SC-43 7tlt17D7b ic LA 7841 LA 7841 LG 7CA 2005A transistor sc 308 2SD1145 784E S/LG 7CA
2N5051 MOTOROLA

Abstract: transistor sc 308 2N5050 2n3584 motorola 2n6495 2n4240 2n6422
Text: MOTOROLA SC { D I O D E S / O P T O Ï ~Ïm DE I h 3 b 7 E S S 0 3 7 ^ a c ] 5 §~ î 6367255 MOTOROLA SC ( D IODES/OPTO) 34C 37929 r - 3 3 ^ 0 / SILICON POW ER TRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - PL500. 308 2C4240 PNP / die no. - pnp LINE SOURCE - PL500.309 2C6423 (ÿ ( § 1 Complementary transistors designed for high-speed switching, linear amplifier, and high-voltage op-amp applications. NPN This die provides performance


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PDF PL500 2C4240 2C6423 2N3441 2N3583 2N3584 2N358S 2N4240 2N5050 2N5051 MOTOROLA transistor sc 308 2n3584 motorola 2n6495 2n6422
2005 - transistor PDTC

Abstract: PBLS4003V PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1503Y PBLS1501Y PBLS4003Y
Text: BISS loadswitches in SOT363 ( SC -88) due to the same electrical and thermal specification and internal , transistor Tr2 through R1, it switches the pass transistor Tr1. A small base current of about a Milliampere switches up to a few Amperes. The voltage drop across collector and emitter of the pass transistor can be , advantages and disadvantages as Table 1: explains. Compared to MOSFET pass transistor alternatives the major advantage of solutions with a bipolar pass transistor are the far lower costs, the major disadvantage the


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PDF AN10361 OT666 OT666, transistor PDTC PBLS4003V PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1503Y PBLS1501Y PBLS4003Y
PT4572A

Abstract: TO-117A az4v pt45
Text: MOTOROLA SC (XSTRS/R F) IMOTb MOTOROLA ■I SEMICONDUCTOR ■TECHNICAL DATA 4bE D ■b3b7554 00151.35 4 «MOTb T-2S-Û5 The RF Line NPN Silicon High Frequency Transistor . designed for , MHz PT45/2A lc = zoo mA HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS CASE 244D-01. STYLE , mA, f = 500 MHzl ITO - 45 - dBm MOTOROLA RF DEVICE DATA 2-1110 MOTOROLA SC (XSTRS/R F) PT4572A , CURRENT ImA) Figure 4. G(JmaX versus Collector Current MOTOROLA RF DEVICE DATA 2-1111 MOTOROLA SC


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PDF b3b7554 PT45/2A 244D-01. O-117A) PT4572A TO-117A az4v pt45
2001 - oki cross

Abstract: No abstract text available
Text: .2 MG87P3/87P4/87P5 SC Layout Methodology , Application-Specific Integrated Circuit (ASIC) products are available in Standard Cell ( SC ) architectures. The , Oki's production-proven 64Mbit DRAM manufacturing process. The 0.25µm SC family provides significant , optimized for synthesis-based design and is designed for low power and high speed by improving transistor architecture. The 0.25µm SC Cell library structure provides 5 to 10% less power and 18% faster than previous


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PDF MG87P3/87P4/87P5 oki cross
2002 - oki cross

Abstract: BGA 27X27 pitch
Text: .2 MG87P3/87P4/87P5 SC Layout Methodology , Application-Specific Integrated Circuit (ASIC) products are available in Standard Cell ( SC ) architectures. The , Oki's production-proven 64Mbit DRAM manufacturing process. The 0.25µm SC family provides significant , optimized for synthesis-based design and is designed for low power and high speed by improving transistor architecture. The 0.25µm SC Cell library structure provides 5 to 10% less power and 18% faster than previous


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PDF MG87P3/87P4/87P5 oki cross BGA 27X27 pitch
trw RF POWER TRANSISTOR

Abstract: BLT80 bfg540 s-parameter trw rf transistor BLT81 trw rf semiconductors BFG540 BC807 npn power amplifier circuit BC817
Text: better than 45%. The amplifier is build up with three bipolar transistors, the broadband transistor , % 1.2 W Gain 30.8 dB Load & Source impedance 50 Ohm Printed circuit board FR4, ({,=4.7, h , 4.4:1 Vs=8V, Pout=1.5W max. Harmonic content -39 dBc P« = 1.2W Dynamic range P„= 0 - 30.8 dBm Vc , transistor is not loaded with the optimum load for maximum gain, but with 500. The transformation from the , bias voltage to supply the BLT80 and BLT81. The BFG540/x transistor is operating in class A with a


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PDF BFG540/x BLT80 BLT81. BFG540, BLT81 900MHz. BLT81 trw RF POWER TRANSISTOR bfg540 s-parameter trw rf transistor trw rf semiconductors BFG540 BC807 npn power amplifier circuit BC817
2005 - AFAA TRANSISTOR

Abstract: SOT-23 adaa AFAA SOT-23
Text: 3.08 4.00 4.38 4.63 24 17 MIN 1.0 1.2 1.2 24 17 TYP MAX 5.5 5.5 5.5 60 50 100 100 35 30 60 60 4.70 4.75 4.86 4.45 4.50 4.56 4.06 4.10 4.20 3.11 3.15 3.23 2.96 3.00 3.08 2.66 2.70 2.76 V µA V UNITS Supply , 2.55 2.52 2.28 2.25 2.22 30 20 240 560 840 460 840 0.3 0.4 0.3 V 2.32 2.63 2.93 3.08 4.38 TYP 4.63 MAX , MAX810S MAX810R MAX810Z RESET THRESHOLD (V) 4.63 4.38 3.08 2.93 2.63 2.32 4.63 4.38 4.00 3.08 2.93 2.63 2.32 4.63 4.38 3.08 2.93 2.63 2.32 OUTPUT TYPE OPEN-DRAIN RESET OPEN-DRAIN RESET OPEN-DRAIN RESET


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PDF MAX803/MAX809/MAX810 140ms MAX803 OT-23 21-0051G MAX809MEUR MAX809MEUR+ MAX809MEUR AFAA TRANSISTOR SOT-23 adaa AFAA SOT-23
2005 - SOT-23 AAAA

Abstract: ACAA TRANSISTOR SOT-23 adaa transistor abe 438 AFAA TRANSISTOR
Text: 3.08 4.00 4.38 4.63 24 17 MIN 1.0 1.2 1.2 24 17 TYP MAX 5.5 5.5 5.5 60 50 100 100 35 30 60 60 4.70 4.75 4.86 4.45 4.50 4.56 4.06 4.10 4.20 3.11 3.15 3.23 2.96 3.00 3.08 2.66 2.70 2.76 V µA V UNITS Supply , 2.55 2.52 2.28 2.25 2.22 30 20 240 560 840 460 840 0.3 0.4 0.3 V 2.32 2.63 2.93 3.08 4.38 TYP 4.63 MAX , MAX810S MAX810R MAX810Z RESET THRESHOLD (V) 4.63 4.38 3.08 2.93 2.63 2.32 4.63 4.38 4.00 3.08 2.93 2.63 2.32 4.63 4.38 3.08 2.93 2.63 2.32 OUTPUT TYPE OPEN-DRAIN RESET OPEN-DRAIN RESET OPEN-DRAIN RESET


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PDF MAX803/MAX809/MAX810 140ms MAX803 MAX809MEUR-TG002 MAX809MEUR MAX809MEUR+ MAX809MEUR MAX809MEUR-T10 MAX809MEUR-T SOT-23 AAAA ACAA TRANSISTOR SOT-23 adaa transistor abe 438 AFAA TRANSISTOR
MARKING HRA

Abstract: 2SD2171S Wr1c 2SD2351
Text: Transistors 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Medium Power Transistor (25V , MHz * Cob pf VCB-10V, lE -0 A ,f-1 M H z (94L-1061-D212) General Purpose Transistor , 308 DDlbcJ73 T33 (94S-374-D215) n im m Transistors Packages Packages ROHM has been , packages T yp* EMT3 SC -75A type 0 2 + 0 .1 - 0 .0 5 External dimensions (Units : mm) 1.6 ± 0.2 1 .0 ± 0 .1 0.50.5 O 2 + 0 .1 - 0 .0 5 Features A more compact version of the UMT3 ( SC -70), the EMT3


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PDF 2SD2537 2SD2171S 2SD2351 2SD2226K 2SD2227S 2SD2171S 100ms 500/10mA) MARKING HRA Wr1c
2005 - SOT-23 adaa

Abstract: AFAA SOT-23 MAX803SEXR T MAX809LEUR-T
Text: 3.08 4.00 4.38 4.63 24 17 MIN 1.0 1.2 1.2 24 17 TYP MAX 5.5 5.5 5.5 60 50 100 100 35 30 60 60 4.70 4.75 4.86 4.45 4.50 4.56 4.06 4.10 4.20 3.11 3.15 3.23 2.96 3.00 3.08 2.66 2.70 2.76 V µA V UNITS Supply , 2.55 2.52 2.28 2.25 2.22 30 20 240 560 840 460 840 0.3 0.4 0.3 V 2.32 2.63 2.93 3.08 4.38 TYP 4.63 MAX , MAX810S MAX810R MAX810Z RESET THRESHOLD (V) 4.63 4.38 3.08 2.93 2.63 2.32 4.63 4.38 4.00 3.08 2.93 2.63 2.32 4.63 4.38 3.08 2.93 2.63 2.32 OUTPUT TYPE OPEN-DRAIN RESET OPEN-DRAIN RESET OPEN-DRAIN RESET


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PDF MAX803/MAX809/MAX810 140ms MAX803 pk/1194/t/or 27-Nov-2008 MAX803L, MAX803M, MAX803R, MAX803S, MAX803T, SOT-23 adaa AFAA SOT-23 MAX803SEXR T MAX809LEUR-T
2004 - transistor N08

Abstract: N07 TRANSISTOR ADM823 ADM82 ADM823-ADM825 ADM824 ADM825 N08 sot23
Text: Supply Current (SOT-23 only) V V µA V 4.38 3.08 2.93 2.63 2.32 2.19 40 10 5 200 40 , ) 4.63 4.63 4.63 4.63 4.38 4.38 4.38 4.38 3.08 3.08 3.08 3.08 2.93 2.93 2.93 2.93 2.63 2.63 2.63 2.63 2.32 2.32 2.19 2.19 4.63 4.63 4.63 4.63 4.38 4.38 4.38 4.38 3.08 3.08 3.08 3.08 2.93 2.93 2.93 2.93 2.63 2.63 2.63 2.63 2.32 2.32 2.19 2.19 Temperature Range , Threshold (V) 4.63 4.63 4.63 4.63 4.38 4.38 4.38 4.38 3.08 3.08 3.08 3.08 2.93 2.93 2.93


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PDF OT-23 ADM823 ADM825 140ms ADM823, ADM824) ADM825) ADM823) ADM824/ADM825) transistor N08 N07 TRANSISTOR ADM82 ADM823-ADM825 ADM824 ADM825 N08 sot23
Not Available

Abstract: No abstract text available
Text: V VGSS ID 30.8 (Note 1) IDP 123 PD 230 W EAS 437 mJ IAR , ) Avalanche current Reverse drain current (DC) (Note 1) IDR 30.8 Reverse drain current (pulsed , , Tch = 25 (initial), L = 12.9 mH, RG = 25 Ω, IAR = 7.7 A Note: This transistor is sensitive , Unit Qg VDD ≈ 400 V, VGS = 10 V, ID = 30.8 A  65  nC Gate-source charge 1 , Condition Min Unit Diode forward voltage VDSF IDR = 30.8 A, VGS = 0 V   -1.7


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PDF TK31N60X O-247
Not Available

Abstract: No abstract text available
Text: ) (Note 1) ID 30.8 Drain current (pulsed) (Note 1) IDP 123 PD 45 W (Note 2) EAS 437 mJ IAR 7.7 A Reverse drain current (DC) (Note 1) IDR 30.8 , 25 (initial), L = 12.9 mH, RG = 25 Ω, IAR = 7.7 A Note: This transistor is sensitive to , = 10 V, ID = 30.8 A  86  nC Gate-source charge 1 Qgs1  18 î , Test Condition VDSF IDR = 30.8 A, VGS = 0 V   -1.7 Reverse recovery time trr


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PDF TK31A60W O-220SIS
transistor sc 308

Abstract: No abstract text available
Text: 1) ID 30.8 Drain current (pulsed) (Note 1) IDP 123 PD 230 W (Note 2) EAS 437 mJ IAR 7.7 A Reverse drain current (DC) (Note 1) IDR 30.8 , : This transistor is sensitive to electrostatic discharge and should be handled with care. 2 , . Max Unit Qg VDD ≈ 400 V, VGS = 10 V, ID = 30.8 A  105  nC Gate-source , €Œ Characteristics Diode forward voltage Symbol Test Condition VDSF IDR = 30.8 A, VGS = 0 V  î


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PDF TK31N60W5 O-247 transistor sc 308
2012 - Not Available

Abstract: No abstract text available
Text: IAR IDR IDRP Tch Tstg VISO(RMS) TOR Rating 600 ±30 30.8 123 45 437 7.7 30.8 123 150 -55 to 150 2000 , , IAR = 7.7 A Note: This transistor is sensitive to electrostatic discharge and should be handled , charge Symbol Qg Qgs1 Qgd Test Condition VDD 400 V, VGS = 10 V, ID = 30.8 A Min Typ. 86 18 41 Max , IDR = 30.8 A, VGS = 0 V IDR = 15.4 A, VGS = 0 V -dIDR/dt = 50 A/µs Min 15 Typ. 410 3.5 17 Max , : SC -67 TOSHIBA: 2-10U1S Nickname: TO-220SIS 9 2012-08-14 Rev.1.0 TK31A60W RESTRICTIONS ON


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PDF TK31A60W O-220SIS
2013 - Not Available

Abstract: No abstract text available
Text: 30.8 (Note 1) IDP 123 PD 230 W EAS 437 mJ IAR Drain current (pulsed , Reverse drain current (DC) (Note 1) IDR 30.8 Reverse drain current (pulsed) (Note 1 , = 12.9 mH, RG = 25 Ω, IAR = 7.7 A Note: This transistor is sensitive to electrostatic , = 10 V, ID = 30.8 A  86  nC Gate-source charge 1 Qgs1  18 î , Test Condition VDSF IDR = 30.8 A, VGS = 0 V   -1.7 Reverse recovery time trr


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PDF TK31J60W
2013 - Not Available

Abstract: No abstract text available
Text: 30.8 (Note 1) IDP 123 PD 230 W EAS 437 mJ IAR Drain current (pulsed , Reverse drain current (DC) (Note 1) IDR 30.8 Reverse drain current (pulsed) (Note 1 , = 12.9 mH, RG = 25 Ω, IAR = 7.7 A Note: This transistor is sensitive to electrostatic , = 10 V, ID = 30.8 A  86  nC Gate-source charge 1 Qgs1  18 î , Test Condition VDSF IDR = 30.8 A, VGS = 0 V   -1.7 Reverse recovery time trr


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PDF TK31N60W O-247
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