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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor on 4584 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 4584 Group

Abstract: transistor on 4584 CMOS 4584 gate control remote M34584MD-XXXFP M34584EDFP FR22 FR21 FR20 simple remote control on/off switch
Text: pull-up transistor ON and open) or "L" input (connect to VSS, or open and set the output latch to "0"). , used, turn pull-up transistor of unused one ON and open. (Note when connecting to VSS and VDD , change. 4584 Group REJ03B0010-0201Z Rev.2.01 2003.09.18 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4584 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is , oscillation circuit switch function. The various microcomputers in the 4584 Group include variations of the


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PDF REJ03B0010-0201Z 10bit 4584 Group transistor on 4584 CMOS 4584 gate control remote M34584MD-XXXFP M34584EDFP FR22 FR21 FR20 simple remote control on/off switch
2003 - CMOS 4584

Abstract: 4584 Group gate control remote transistor on 4584 M34584MD-XXXFP M34584EDFP FR21 FR20 sks 1/16 simple remote control on/off switch
Text: key-on wake-up control register K1, set the unused 1-bit to "H" input (turn pull-up transistor ON and , transistor of unused one ON and open. (Note when connecting to VSS and VDD) q Connect the unused pins to , Pull-up transistor PU1k (Note 4) D K03 Notes 1: This symbol represents a parasitic diode on , 4584 Group Notes 1: The address is stacked to the last cycle. 2: This interval of cycles depends on , change. 4584 Group REJ03B0010-0300Z Rev.3.00 2004.08.06 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER


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PDF REJ03B0010-0300Z 10bit CMOS 4584 4584 Group gate control remote transistor on 4584 M34584MD-XXXFP M34584EDFP FR21 FR20 sks 1/16 simple remote control on/off switch
2003 - CMOS 4584

Abstract: bl p61 gate control remote FR20 FR21 M34584EDFP M34584MD-XXXFP
Text: key-on wake-up control register K1, set the unused 1-bit to "H" input (turn pull-up transistor ON and , transistor of unused one ON and open. (Note when connecting to VSS and VDD) q Connect the unused pins to , Pull-up transistor PU1k (Note 4) D K03 Notes 1: This symbol represents a parasitic diode on , 4584 Group Notes 1: The address is stacked to the last cycle. 2: This interval of cycles depends on , change. 4584 Group REJ03B0010-0300Z Rev.3.00 2004.08.06 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER


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PDF REJ03B0010-0300Z 10bit CMOS 4584 bl p61 gate control remote FR20 FR21 M34584EDFP M34584MD-XXXFP
2003 - FR20

Abstract: FR21 M34584EDFP M34584MD-XXXFP
Text: pull-up transistor ON and open) or "L" input (connect to VSS, or open and set the output latch to "0"). , used, turn pull-up transistor of unused one ON and open. (Note when connecting to VSS and VDD) q , Pull-up transistor PU1k (Note 4) D K03 Notes 1: This symbol represents a parasitic diode on , To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , Electronics product depends on the product's quality grade, as indicated below. You must check the quality


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2003 - 4584 Group

Abstract: 4584 FR20 FR21 FR22 M34584EDFP M34584MD-XXXFP transistor on 4584
Text: pull-up transistor ON and open) or "L" input (connect to VSS, or open and set the output latch to "0"). , used, turn pull-up transistor of unused one ON and open. (Note when connecting to VSS and VDD , change. 4584 Group REJ03B0010-0200Z Rev.2.00 2003.04.16 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4584 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is , oscillation circuit switch function. The various microcomputers in the 4584 Group include variations of the


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PDF REJ03B0010-0200Z 10bit 4584 Group 4584 FR20 FR21 FR22 M34584EDFP M34584MD-XXXFP transistor on 4584
2003 - Not Available

Abstract: No abstract text available
Text: key-on wake-up control register K1, set the unused 1-bit to “H” input (turn pull-up transistor ON , pull-up transistor of unused one ON and open. (Note when connecting to VSS and VDD) q Connect the , Pull-up transistor PU1k (Note 4) D K03 Notes 1: This symbol represents a parasitic diode on , To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check


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2004 - cmos ic 4584

Abstract: M4584 4584 Group transistor on 4584 ic 4518 6p20 ram repair cmos ic 4583 74HC245 Datasheet pin configuration of ic 4518
Text: M34519T-MCU MCU Board for 4500 Series 4518, 4519, 4583 and 4584 Group MCUs User's Manual Rev , materials, including product data, diagrams, charts, programs and algorithms represents information on , , please be sure to evaluate all information as a total system before making a final decision on the , Solutions Corporation for further details on these materials or the products contained therein , developing, be sure to make a judgment on your own risk that it can be put to practical use by performing


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PDF M34519T-MCU REJ10J0071-0200Z M34519T-MCU cmos ic 4584 M4584 4584 Group transistor on 4584 ic 4518 6p20 ram repair cmos ic 4583 74HC245 Datasheet pin configuration of ic 4518
2003 - transistor on 4584

Abstract: cmos ic 4583 cmos ic 4584 micro-X ceramic Package hemt ic 4583 pin
Text: Preliminary 0 Typical Applications · Basestation Applications · Broadband, Low-Noise Gain Blocks · IF or RF Buffer Amplifiers Product Description The RF3394 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications , Applications Engineering at (336) 678-5570 for more information. 4-584 Rev A10 030425 RF Micro


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PDF RF3394 6000MHz. 6000MHz 32dBm 18dBm RF3394 transistor on 4584 cmos ic 4583 cmos ic 4584 micro-X ceramic Package hemt ic 4583 pin
2005 - CGH27015

Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
Text: is a gallium nitride (GaN) high electron mobility transistor designed specifically for high , , LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both , , Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF , Temperature2 Note: 1 Refer to the Application Note on soldering at www.cree.com/products , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH27015F-TB test fixture


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PDF CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
2005 - TRANSISTOR SMD 3401

Abstract: No abstract text available
Text: ) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications , ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both , 9.8 dB @ 0.01 % Probability on CCDF. Features · 3.3 - 3.9 GHz Operation · 15 W Peak Power , Volts Watts °C °C mA °C in-oz °C/W °C RJC TC Note: 1 Refer to the Application Note on soldering , , PAVE = 2.0 W EVM1 EVM2 VSWR Notes: 1 Measured on wafer prior to packaging. 2 Measured in the


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PDF CGH35015 CGH35015 CGH3501 35015P TRANSISTOR SMD 3401
2005 - CGH27015-TB

Abstract: CGH27015 CGH27015F JESD22
Text: is a gallium nitride (GaN) high electron mobility transistor designed specifically for high , , LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both , , Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF , Temperature2 Note: 1 Refer to the Application Note on soldering at www.cree.com/products , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH27015F-TB test fixture


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PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB CGH27015F JESD22
2005 - TRANSISTOR SMD 3401

Abstract: No abstract text available
Text: ) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications , ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both , 9.8 dB @ 0.01 % Probability on CCDF. Features · 3.3 - 3.9 GHz Operation · 15 W Peak Power , operation. Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp , at all phase angles, VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W EVM1 EVM2 VSWR Notes: Measured on


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PDF CGH35015 CGH35015 CGH3501 35015P TRANSISTOR SMD 3401
2005 - CGH27015-TB

Abstract: CGH27015
Text: is a gallium nitride (GaN) high electron mobility transistor designed specifically for high , , LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both , on CCDF. Features · VHF - 3.0 GHz Operation · 15 W Peak Power Capability · 14.5 dB Small Signal , Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering , Measured on wafer prior to packaging. 2 Measured in the CGH27015F-TB test fixture. 3 Under 802.16 OFDM, 3.5


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PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB
2005 - MESFET S parameter

Abstract: No abstract text available
Text: purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain , . RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices , has been gathered on standard FR-4 evaluation boards. These evaluation boards are not optimized for , intended operating conditions. 3050 years Power Supply 4-584 Rev A8 050524 RF3374 Pin 1


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PDF RF3374 RF3374 6000MHz. MESFET S parameter
2005 - Not Available

Abstract: No abstract text available
Text: CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high , , LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both , , Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF , . 2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 3 , Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the


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PDF CGH27015 CGH27015 CGH2701 27015P
2005 - CGH35015

Abstract: CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401
Text: ) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access , CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both , , PAR = 9.8 dB @ 0.01 % Probability on CCDF. Features · 3.3 - 3.9 GHz Operation · 15 W Peak Power , Resistance, Junction to Case2 Case Operating Temperature2 Note: 1 Refer to the Application Note on , MHz Drain Efficiency4 Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging


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PDF CGH35015 CGH35015 CGH3501 35015P CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401
cmos ic 4584

Abstract: transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon
Text: equivalent gates CGA1ME12 - 4584 maximum equivalent gates and 1280 bits of RAM memory Array performance 300 , , Inc. The BIT1 process, based on 2-micron lithography and polysilicon self-aligning techniques, produces a transistor size that results in power dissipation one-tenth that of conventional ECL gates at , . Gate count based on the 4:1 mux method 2. The difference between the maximum number of pads and l/Os is , count based on 4:1 mux method. 2. The difference between the maximum number of pads and l/Os is the


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PDF i73tI0 CGA70E18 CGA40E12 CGA1ME12 70E18) 70E18: cmos ic 4584 transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon
2006 - transistor on 4584

Abstract: cmos ic 4584 pin diagram for IC 4588 RF3374 RF3374PCBA-410
Text: manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been , correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time , characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not , exceed 80mA over all intended operating conditions. Power Supply 4-584 Rev A8 050524 RF3374 , -I CC 4 GND Rev A8 050524 RF OUT RF IN Because DC is present on this pin, a DC


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PDF RF3374 RF3374 6000MHz. 50ltage transistor on 4584 cmos ic 4584 pin diagram for IC 4588 RF3374PCBA-410
2004 - transistor on 4584

Abstract: RF3374 RF3374PCBA-410
Text: RF3374 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an , gathered on standard FR-4 evaluation boards. These evaluation boards are not optimized for frequencies , 80mA over all intended operating conditions. Power Supply 4-584 Rev A6 040708 RF3374 Pin , -I CC 4 GND Rev A6 040708 RF OUT RF IN Because DC is present on this pin, a DC


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PDF RF3374 RF3374 6000MHz. transistor on 4584 RF3374PCBA-410
ACT-4032

Abstract: C - 4834 transistor transistor M 9741 transistor c s x 13001 k 1658 9999 transistor 4413 C 4834 transistor sn 7452 ----------------------PI/MZ 13001 TRANSISTOR
Text: on a , . 80"C/W Active Transistor Power D issip atio n . 280 mW Junction , -45.26 -48.77 -48.25 -45.01 -45.46 -47.62 -47.29 -45.65 - 45.84 -46.79 -46.11 -46.91 -45.66 -48.34 -48.67


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PDF ACT-4032 laser-w99 C - 4834 transistor transistor M 9741 transistor c s x 13001 k 1658 9999 transistor 4413 C 4834 transistor sn 7452 ----------------------PI/MZ 13001 TRANSISTOR
2005 - pin diagram for IC 4588

Abstract: RF3374 RF3374PCBA-410 C3050
Text: Description The RF3374 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use , specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation , current does not exceed 80mA over all intended operating conditions. Power Supply 4-584 Rev A7 , -I CC 4 GND Rev A7 050310 RF OUT RF IN Because DC is present on this pin, a DC


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PDF RF3374 RF3374 6000MHz. pin diagram for IC 4588 RF3374PCBA-410 C3050
2009 - transistor BC 339

Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays · For AF input stages and driver applications · , transistor with good matching in one package · BC856S / U, BC857S: For orientation in reel see package , = 5 mA VBE( ON ) Base-emitter voltage1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1Pulse , of any third party. Information For further information on technology, delivery terms and , Warnings Due to technical requirements, components may contain dangerous substances. For information on the


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PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor BC 339 TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
transistor on 4584

Abstract: D20N06 369A-13 AN569 MTD20N06HDL h1010
Text: Characterized for Use in Bridge Circuits • IDSS and VoS( on ) Specified at Elevated Temperature • Surface , otherwise noted) TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS( on ) = 0-045 OHM MTD20N06HDL Motorola , FR-4 board using the minimum recommended pad size. This document contains information on a new , Transistor Device Data 4-583 MTD20N06HDL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted , ^iAdc Gate-Body Leakage Current (Vqq = ±15 Vdc, Vqs = 0) Igss — — 100 nAdc ON CHARACTERISTICS (1


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1998 - nec 14312 transistor

Abstract: ic 4440 for audio amplification ic 5219 8mm nec 7912 configuration of ic 7819 2SC4226 4440 audio ic OF IC 7912 2SC4227 21 01 140 5091
Text: PRELIMINARY DATA SHEET Silicon Transistor µPA834TF NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 , .53 .53 .52 .52 .52 .51 ANG 78.39 68.80 61.19 55.07 51.31 47.96 45.84 44.63 43.53 , 49.47 49.04 48.43 47.89 47.20 46.59 45.84 45.14 44.42 43.48 42.59 MAG .94 .84 .73 .64 , : "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on , applications of a device depend on its quality grade, as indicated below. Customers must check the quality


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PDF PA834TF PA834TF 2SC4227 2SC4226 nec 14312 transistor ic 4440 for audio amplification ic 5219 8mm nec 7912 configuration of ic 7819 2SC4226 4440 audio ic OF IC 7912 2SC4227 21 01 140 5091
2004 - 4584 inverter

Abstract: 74VHC14
Text: (M34519M8-001FP) on the socket of the emulator. When debugging 4583/ 4584 Group MCUs: Mount the evaluation , M34519T2-CPE Compact Emulator with Real-time Trace Functions for 4518, 4519, 4583 and 4584 Groups , materials, including product data, diagrams, charts, programs and algorithms represents information on , , please be sure to evaluate all information as a total system before making a final decision on the , Solutions Corporation for further details on these materials or the products contained therein


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PDF M34519T2-CPE REJ10J0128-0300Z M34519T2-CPE 4584 inverter 74VHC14
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