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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor on 4436 Datasheets Context Search

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transistor on 4436

Abstract: IGBT Transistor 1200V, 25A 035H IRGP30B120KD-E IRGP30B120KD-EP diode Marking code WT
Text: Switching Loss 3778 4436 td( on ) Turn - on delay time tr Rise time td(off) Turn - off , PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE( on ) Non Punch Through (NPT) Technology · Low Diode , Recovery Characteristics · Positive VCE( on ) Temperature Coefficient · Extended Lead TO-247AD Package · Lead-Free VCES = 1200V VCE( on ) typ. = 2.28V G VGE = 15V, IC = 25A, 25°C E N-channel


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PDF IRGP30B120KD-EP O-247AD 125oC IRGP30B120KD-E transistor on 4436 IGBT Transistor 1200V, 25A 035H IRGP30B120KD-E IRGP30B120KD-EP diode Marking code WT
2002 - EC3H09B

Abstract: 7308 IC IT04819
Text: Ordering number : ENN7269 EC3H09B NPN Epitaxial Planar Silicon Transistor EC3H09B High-Frequency Low-Noise Amplifier and OSC Applications · [EC3H09B] 0.35 0.2 0.15 0.15 0.05 1 2 , =1MHz GHz GHz 0.95 pF 0.7 Marking : J 1.2 0.9 pF Continued on next page. Any and , 2200 0.518 -175.49 1.789 54.03 0.198 44.36 0.260 -110.18 2400 0.507 , 0.179 -106.11 3000 0.408 170.38 1.725 44.36 0.256 51.77 0.173 -106.92


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PDF ENN7269 EC3H09B EC3H09B] E-CSP1006 EC3H09B 7308 IC IT04819
k 3918 TRANSISTOR

Abstract: transistor on 4409
Text: . Built on a thinfilm substrate, this amplifier is specially designed for high reverse isolation , Characteristics1 105°C/W 0jc 150 mW Active Transistor Power Dissipation Junction Temperature Above Case , -10.89 -6.77 -3.26 -.10 19.18 29.85 37.55 44.00 48.35 50.85 52.23 52.20 50.34 44.36 34.09


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2008 - transistor on 4436

Abstract: EC3H09B MARKING 17305 c 4235 transistor npn
Text: Ordering number : ENN7269 EC3H09B NPN Epitaxial Planar Silicon Transistor EC3H09B High-Frequency Low-Noise Amplifier and OSC Applications 0.15 0.15 0.05 1 2 0.25 0.4 0.65 , Capacitance Cre VCB=1V, f=1MHz 0.7 0.9 pF Marking : J GHz GHz Continued on next page , 44.02 0.266 -108.83 2200 0.518 -175.49 1.789 54.03 0.198 44.36 0.260 , 1.725 44.36 0.256 51.77 0.173 -106.92 S21 31.509 S21 138.07 S12 0.025 S12


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PDF ENN7269 EC3H09B EC3H09B] E-CSP1006 transistor on 4436 EC3H09B MARKING 17305 c 4235 transistor npn
k 3918 TRANSISTOR

Abstract: transistor on 4409 transistor k 3918 transistor on 4436 Avantek amplifier AVANTEK transistor Avantek amp
Text: immunity to bias voltage variations. Built on a thinfilm substrate, this amplifier is specially designed , Characteristics' 105°CAV Active Transistor Power Dissipation 150 mW Junction Tem perature Above Case Temperature , 50.85 52.23 52.20 50.34 44.36 34.09 20.41 4.18 -13.89 ^ 9 .5 3 -80.67 -106.33 -127.86 -145.40 -159.50 K


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GaAs FET HEMT Chips

Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet 5458 transistor a02 Transistor rf
Text: MITSUBISHI SEMICONDUCTOR MGFC4453A InGaAs HEMT DESCRIPTION The MGFC4453A low-noise HEMT (High Electron Mobility Transistor ) is designed for use in X to K band amplifiers. OUTLINE , -150.9 -155.6 -160.2 -164.6 Magn. 5.458 5.424 5.369 5.295 5.204 5.098 4.980 4.852 4.718 4.578 4.436 4.292 , characteristics a. DC characteristics on spec .sheet show the test conditions and values using w efer -prober.DC , hen more then 80% of the samples satisfy the value o f RF characteristics on spec.sheet,that w afer is


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PDF MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet 5458 transistor a02 Transistor rf
Avantek utc 573

Abstract: transistor on 4409
Text: on a thin-film substrate, this ELECTRICAL SPECIFICATIONS amplifier is specially designed for , €¢ . . . * . . . . . . . . . Active Transistor , 19.18 29.85 37.55 44.00 48.35 50.85 52.23 52.20 60.34 - 44.36 34.09 20.41 4.18 -13.89


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PDF T-74-Q Avantek utc 573 transistor on 4409
c 4977 transistor

Abstract: transistor on 4436
Text: ,4 Typical on wafer measurements : Main Features Gain & NF ( dB ) ¦ Broadband performances , made without bonding wires at the RF ports. (2) 90 mA is the typical bias current used for on wafer , Noise Amplifier CHA2095a Typical Scattering Parameters ( On wafer Sij measurements ) Bias , -46.59 -45.05 - 44.36 -42.19 -41.27 -40.37 -39.92 -40.59 -37.38 -37.23 -34.59 -44.23 -44.58 , Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb = +25°C Noise figure versus drain


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor transistor on 4436
transistor on 4436

Abstract: c 4977 transistor
Text: lithography. It is available in chip form. Vd Vd In Out Vg 1,2 Vg 3,4 Typical on wafer , current used for on wafer measurements, with adjusting Vg1,2 voltage for optimum noise figure and Vg3,4 , without notice 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters ( On wafer , -55.77 -57.30 -56.20 -49.77 -49.70 -51.44 -47.38 -46.89 -47.95 -46.59 -45.05 - 44.36 -42.19 , Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb = +25°C Noise figure versus drain


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 transistor on 4436 c 4977 transistor
c 4977 transistor

Abstract: No abstract text available
Text: lithography. It is available in chip form. Vd Vd In Out Vg 1,2 Vg 3,4 Typical on wafer , . (2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2 voltage , Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Freq. GHz 2 4 6 8 10 12 14 , -47.95 -46.59 -45.05 - 44.36 -42.19 -41.27 -40.37 -39.92 -40.59 -37.38 -37.23 -34.59 -44.23 , change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb =


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor
1995 - transistor on 4409

Abstract: A1357 transistor
Text: stabilization and increased immunity to bias voltage variations. Built on a thinfilm substrate, this amplifier , Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 105 , 52.23 52.20 50.34 44.36 34.09 20.41 4.18 –13.89 –49.53 –80.67 –106.33 –127.86 â , Blank = No Screening R = R-Series Screening For more information on R-Series screening, see , consists of a SMA Female connector on both the input and output (see note). Note: R-Series screening


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PDF 500MHz 5963-2459E transistor on 4409 A1357 transistor
1996 - A1712

Abstract: a1712 transistor transistor on 4409
Text: immunity to bias voltage variations. Built on a thinfilm substrate, this amplifier is specially designed , Active Transistor Power Dissipation Junction Temperature Above Case Temperature 105°C/W 150 mW 16 , 52.23 52.20 50.34 44.36 34.09 20.41 4.18 –13.89 –49.53 –80.67 –106.33 –127.86 â , Blank = No Screening R = R-Series Screening For more information on R-Series screening, see , consists of a SMA Female connector on both the input and output (see note). Note: R-Series screening


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1996 - transistor on 4409

Abstract: k 3918 TRANSISTOR transistor k 3918
Text: temperature stabilization and increased immunity to bias voltage variations. Built on a thinfilm substrate , Thermal Characteristics1 JC Active Transistor Power Dissipation Junction Temperature Above Case , 44.36 34.09 20.41 4.18 ­13.89 ­49.53 ­80.67 ­106.33 ­127.86 ­145.40 ­159.50 165.64 151.16 133.10 , For more information on R-Series screening, see Reliability Screening, Pub. 5963-3240E. Model , available is the -1. The -1 option consists of a SMA Female connector on both the input and output (see note


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c 5929 transistor

Abstract: transistor c 5299 Transistor C 4927 transistor rf m 9860 IC 14093 m 9860 transistor UPA802T 8425 nec transistor 6851 transistor on 4436
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 , package. Each transistor is independently mounted and easily config ured for either dual transistor or , . Emitter Transistor 1 Collector Transistor 2 Em itterTransistor2 Base Transistor 2 Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (Ta , 51.37 47.57 44.36 MAG 0.032 0.062 0.108 0.136 0.150 0.157 0.157 0.155 0.150 0.146 0.140 0.136 0.133


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PDF NE681 UPA802T UPA802T UPA802T-T1 24-Hour c 5929 transistor transistor c 5299 Transistor C 4927 transistor rf m 9860 IC 14093 m 9860 transistor 8425 nec transistor 6851 transistor on 4436
Not Available

Abstract: No abstract text available
Text: ,4 Typical on wafer measurements Gain & NF ( dB ) Main Features Broadband performances , made without bonding wires at the RF ports. (2) 90 mA is the typical bias current used for on wafer , 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters ( On wafer Sij measurements) Bias , -49.70 -51.44 -47.38 -46.89 -47.95 -46.59 -45.05 - 44.36 -42.19 -41.27 -40.37 -39.92 -40.59 , CHA2095a Typical on Wafer Measurements Tamb = +25° C Noise figure versus drain current 60, 85, 100mA


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147-27
Not Available

Abstract: No abstract text available
Text: ,4 Typical on wafer measurements Gain & NF ( dB ) Main Features 1 Broadband performances 1 , for on wafer measurements, with adjusting Vg1, 2 voltage for optimum noise figure and Vg3,4 adjusting , change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical Scattering Parameters ( On , -45.05 - 44.36 -42.19 -41.27 -40.37 -39.92 -40.59 -37.38 -37.23 -34.59 -44.23 -44.58 -41.46 , change without notice 36-40GHz Low Noise Amplifier CHA2095a Typical on Wafer Measurements Tamb =


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PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147-27
LA 7376

Abstract: No abstract text available
Text: . 408C/W Active Transistor Power D issip atio n . 300 mW Junction , -99.34 148.81 45.57 -48.43 - 44.36 -96.16 -144.95 151.12 84.45 13.99 -114.50 147.26 -3.10 -


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PDF PPA-18222 PP-25, PPA-18222 OA85Q35 LA 7376
2003 - 13001 TRANSISTOR 217

Abstract: 2012-101N DATA IC HBT 01-01 13001 bipolar transistor 60-000346-000B 12904 ECJ1VF1A105Z transistor on 4436 3300 micro farad capacitor ECJ-1VF1A105Z
Text: manufactured using advanced Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT) technology , directly connected together to the ground plane on the PCB. The ground connection also serves as a heatsink. DC bias is applied to this pin through a RF choke. A bypass capacitor (1.0 micro farad) on the DC , a DC blocking capacitor on the output with similar requirements as the input side. 3 RFout Inches , 129.587 126.494 123.538 120.517 118.928 MAG[S21] 9.059 6.157 5.245 4.852 4.628 4.436 4.254 4.069 3.917


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PDF ECG012 OT-89 ECG012 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 SS-000323-000 13001 TRANSISTOR 217 2012-101N DATA IC HBT 01-01 13001 bipolar transistor 60-000346-000B 12904 ECJ1VF1A105Z transistor on 4436 3300 micro farad capacitor ECJ-1VF1A105Z
2006 - 8 pin 4435 ic voltage out and in

Abstract: Regulated Power Supply variable Schematic Diagram RF2377 4435 power ic linear a fc515 ATT 47 RF2377-410 RF2377-411 transistor 4436
Text: include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard , -4 4-436 Rev A11 020607 RF2377 Evaluation Board Layout (W-CDMA) Board Size 2.0" x 2.0" Board


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PDF RF2377 RF2377 8 pin 4435 ic voltage out and in Regulated Power Supply variable Schematic Diagram 4435 power ic linear a fc515 ATT 47 RF2377-410 RF2377-411 transistor 4436
2005 - UPA802T

Abstract: a 3120 0537 741 LEM NE681 S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · UPA802T OUTLINE DIMENSIONS , frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The , applications. 0.9 ± 0.1 0.7 +0.10 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1


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PDF UPA802T NE681 UPA802T a 3120 0537 741 LEM S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299
1998 - transistor s11 s12 s21 s22

Abstract: 741 LEM UPA802T hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 S21E UPA802T-T1 transistor j50
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · UPA802T OUTLINE DIMENSIONS , silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low , 0.1 0.7 +0.10 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 0 ~ 0.1


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PDF UPA802T NE681 UPA802T UPA802T-T1 24-Hour transistor s11 s12 s21 s22 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 S21E UPA802T-T1 transistor j50
4435m

Abstract: 4431 mosfet
Text: and lower RoS( on ) capabilities. This advanced high-cell density HDTMOS power FET is designed to , Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and v DS( on ) Specified at Elevated , ) MTB50P03HDL M o t o r o la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS( on , the information presented. SOA Limit curves - representing boundaries on device characteristics - are , use and best overall value. REV 1 4-430 Motorola TMOS Power MOSFET Transistor Device Data


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c 5929 transistor

Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · SMALL , frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low , 0.05 +0.10 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle


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PDF UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299
1995 - A4436

Abstract: transistor a684
Text: +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , R-Series Screening For more information on R-Series screening, see Reliability Screening, Pub. 5963-3240E , €“115.99 172.99 143.34 68.25 –33.10 –99.34 148.81 45.57 –48.43 – 44.36 –96.16 –144.95 151.12 , arrangement) on the unit is recommended, but not absolutely necessary. Absolute maximum reflow temperature is , effective. For more detailed instructions on how to use PlanarPak Products, please see the application note


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PDF PPA-18222 PP-25 PPA-18222 5963-3232E. 5963-2591E A4436 transistor a684
2004 - 035H

Abstract: IRGP30B120KD-E IRGP30B120KD-EP
Text: =200µH CT 4 o Etot Total Switching Loss 3778 4436 td( on ) Turn - on delay time , PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE( on ) Non Punch Through (NPT) Technology · Low Diode , Recovery Characteristics · Positive VCE( on ) Temperature Coefficient · Extended Lead TO-247AD Package · Lead-Free VCES = 1200V VCE( on ) typ. = 2.28V G VGE = 15V, IC = 25A, 25°C E N-channel


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PDF IRGP30B120KD-EP O-247AD IRGP30B120KD-E 035H IRGP30B120KD-E IRGP30B120KD-EP
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