The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor nec 8772 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor nec 8772

Abstract: nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor NESG2031M05-T1 C 5074 transistor
Text: NEC 's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe , DESCRIPTION NEC 's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV , amplifiers, and oscillators. NEC s low profile, flat lead style M05 Package provides high frequency , S12 ANG 155.43 136.26 121.08 110.17 101.52 94.16 87.72 81.98 76.77 74.27 71.82 69.48 , /2003 0.56 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended


Original
PDF NESG2031M05 OT-343 NESG2031M05 642e-15 751e-3 06e-3 4e-15 transistor nec 8772 nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor NESG2031M05-T1 C 5074 transistor
2003 - transistor nec 8772

Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
Text: NESG2031M05 NEC 's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES · · HIGH BREAKDOWN VOLTAGE SiGe , only 0.59 mm Flat lead style for better RF performance Pb Free Available (-A) NPN SiGe RF TRANSISTOR · · M05 · NEC 's NESG2031M05 is fabricated using NEC 's high voltage Silicon Germanium , power amplifiers, and oscillators. NEC 's low profile, flat lead style M05 Package provides high , 121.08 110.17 101.52 94.16 87.72 81.98 76.77 74.27 71.82 69.48 67.14 64.88 62.68 60.59 58.42 56.32 54.22


Original
PDF NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
2001 - transistor nec 8772

Abstract: nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample , . Not all devices/types available in every country. Please check with local NEC representative for , 8.772 7.124 6.027 5.190 4.570 4.090 140.8 117.8 105.5 98.0 92.0 87.6 83.5 79.8 76.6 , design-in, refer to the latest publications of NEC 's data sheets or data books, etc., for the most


Original
PDF 2SC5800 2SC5800-T1 transistor nec 8772 nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor
transistor nec 8772

Abstract: nec 8772 transistor BR 8772 transistor BR 8772 MJE 15004 transistor MJE 4302 NESG2031M05 S21E rf ic 3358 NESG2031M05-T1-A
Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC 's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES · , better RF performance · Pb Free Available (-A) M05 DESCRIPTION NEC 's NESG2031M05 is , 121.08 110.17 101.52 94.16 87.72 81.98 76.77 74.27 71.82 69.48 67.14 64.88 62.68 60.59 , Date: 09/2003 0.56 (1) Gummel-Poon Model Life Support Applications These NEC products are not , damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor


Original
PDF NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 nec 8772 transistor BR 8772 transistor BR 8772 MJE 15004 transistor MJE 4302 S21E rf ic 3358 NESG2031M05-T1-A
2001 - Not Available

Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE , /types available in every country. Please check with local NEC representative for availability and , ˆ’175.0 22.146 15.408 11.295 8.772 7.124 6.027 5.190 4.570 4.090 140.8 117.8 105.5 98.0 92.0 87.6


Original
PDF
2001 - transistor nec 8772

Abstract: nec 8772 transistor
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR , order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs , . Not all devices/types available in every country. Please check with local NEC representative for , 22.146 15.408 11.295 8.772 7.124 6.027 5.190 4.570 4.090 3.700 3.385 3.126 2.899 2.708 2.542 2.404 2.272


Original
PDF
2008 - transistor NEC 8772 p

Abstract: q2n2222a 225261148036 IRFB4410 EQUIVALENT IRFB4410 q2n222 transistor 8772 nec 8772 P DO333 transistor 355A sot23
Text: Where: VR4 is 1 V Resistor R4 sets up the base drive for transistor Q2, R5 is the MOSFET (Q3) gate , V Q1 is forward biased which turns on transistor Q2 and provides the gate drive signal to the , input power and remove jumper J1, this will enable the NCP4302 driver output. made up of transistor , charging, transistor Q4 is reverse biases and the trigger input of the NCP4302 is pulled high. After C4 has charged above 0.7 V transistor Q4 will turn-on pulling the trigger input below 0.5 V enabling


Original
PDF AND8300/D NCP4302 NCP4302, TL431 transistor NEC 8772 p q2n2222a 225261148036 IRFB4410 EQUIVALENT IRFB4410 q2n222 transistor 8772 nec 8772 P DO333 transistor 355A sot23
2007 - nec2501

Abstract: nec2501a NEC2501* Opto coupler q2n2222a transistor NEC 8772 p q2n222 MBR20H100 zener diode 1.5KE250A ac power adapter for notebook schematic NCP1230D65R2
Text: is up and operating in DCM. The circuit is made up of transistor Q4, R35, R6, R36, and C4. Refer to , ) capacitor C4 will charge through R6. During the time it is charging, transistor Q4 is reverse biases and the trigger input of the NCP4302 is pulled high. After C4 has charged above 0.7 V transistor Q4 will , 50 90 76.8 18.87 3.57 67.37 87.72 75 90 102.82 18.83 4.77 89.82 , , 73 A 100 V, 73 A NA TO220AB IR IRFB4410PBF No Yes 1 Transistor , NPN 75


Original
PDF AND8300/D NCP4302 NCP4302, TL431 nec2501 nec2501a NEC2501* Opto coupler q2n2222a transistor NEC 8772 p q2n222 MBR20H100 zener diode 1.5KE250A ac power adapter for notebook schematic NCP1230D65R2
2002 - 2SD2165

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , it is a single transistor . In addition, this transistor features a small resin-molded insulation , . Not all devices/types available in every country. Please check with local NEC representative for


Original
PDF 2SD2165 2SD2165
2004 - 2SD2165

Abstract: NEC marking b
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , transistors, but it is a single transistor . 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 3 ±0.1 mounting cost , In addition, this transistor features a small resin-molded 4 ±0.2 · High hFE and low VCE(sat


Original
PDF 2SD2165 2SD2165 NEC marking b
2SD2165

Abstract: nec transistor Transistor NEC 30
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , transistors, but it is a single transistor . 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 3 ±0.1 mounting cost , In addition, this transistor features a small resin-molded 4 ±0.2 · High hFE and low VCE(sat


Original
PDF 2SD2165 2SD2165 nec transistor Transistor NEC 30
2002 - D1615

Abstract: transistor ab2 12
Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1578 QUALITY GRADES Electrode connection 1. Emitter 2. Collector 3.Base · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E


Original
PDF 2SD2425 2SD2425 2SB1578 C11531E) D1615 transistor ab2 12
2002 - darlington transistor for audio power application

Abstract: 2SA1714 2SC4342 C11531E
Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor . This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for , to darlington connection · Large current capacitance and low VCE(sat) · TO-126 power transistor with high power dissipation · Complementary transistor with 2SC4342 QUALITY GRADES · Standard


Original
PDF 2SA1714 2SA1714 O-126 2SC4342 C11531E) darlington transistor for audio power application 2SC4342 C11531E
2002 - Not Available

Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1572 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , local NEC representative for availability and additional information. Document No. D16156EJ2V0DS00


Original
PDF 2SD2403 2SD2403 2SB1572
2005 - transistor 8772

Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain , amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type , amplifier and are not source and load pull date derived from the transistor . Electrostatic Discharge (ESD , 0.023 6.73 0.393 -144.30 600 MHz 0.907 -158.23 10.00 87.72 0.023 3.05


Original
PDF CGH35030F CGH35030F CGH3503 transistor 8772 8772 transistor 470PF CGH35030-TB JESD22
2004 - 2SA1841

Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR , a high-speed Darlington power transistor . PART NUMBER PACKAGE 2SA1841 MP-10 This transistor is ideal for high-precision control such as PWM control for pulse motors brushless motors in OA and FA equipment. In addition, this transistor features a package that can be automounted in radial , in every country. Please check with an NEC Electronics sales representative for availability and


Original
PDF 2SA1841 2SA1841 MP-10
2005 - A 12-15 GHz High Gain Amplifier

Abstract: HEADER RT
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and , applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440166 PN , are not source and load pull date derived from the transistor . Electrostatic Discharge (ESD , 1.61 1.49 1.39 1.30 1.23 1.16 1.10 1.04 0.99 0.95 0.91 0.88 0.85 0.82 0.79 Ang S21 92.31 87.72 83.77


Original
PDF CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT
2005 - transistor 8772

Abstract: Transistor C 4927 8772 transistor CGH35030F
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and , applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440166 PN , are not source and load pull date derived from the transistor . Electrostatic Discharge (ESD , 0.95 0.91 0.88 0.85 0.82 0.79 Ang S21 92.31 87.72 83.77 80.24 76.99 73.96 71.09 68.35 65.71 63.16 60.70


Original
PDF CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor
2002 - 2SB1430

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON , transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is , transistor features a small resin-molded insulation type package, thus contributing to high-density mounting , version. Not all devices/types available in every country. Please check with local NEC representative , change without notice. For actual design-in, refer to the latest publications of NEC 's data sheets or


Original
PDF 2SB1430 2SB1430
2002 - 2SD2164

Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , it is a single transistor . In addition, this transistor features a small resin insulated package , . Not all devices/types available in every country. Please check with local NEC representative for


Original
PDF 2SD2164 2SD2164
2002 - NEC semiconductor

Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON , transistor developed for lowfrequency power amplifiers and low-speed switching. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers , Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the , country. Please check with local NEC representative for availability and additional information


Original
PDF 2SD2217 2SD2217 C11531E) NEC semiconductor transistor PT 4500 C11531E NEC C11531E
2002 - NEC semiconductor

Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator , diode for reverse cable QUALITY GRADES · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of


Original
PDF C11531E) NEC semiconductor C11531E dumper diode dumper
2SB1149

Abstract: 2SD1692
Text: PRELIMINARY PRODUCT INFORMATION SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT: mm) · High DC current gain due , -126 type power transistor · Complementary transistor : 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° , latest version. Not all devices/types available in every country. Please check with local NEC , design-in, refer to the latest publications of NEC 's data sheets or data books, etc., for the most


Original
PDF 2SD1692 O-126 2SB1149 2SB1149 2SD1692
2002 - TRANSISTOR K 314

Abstract: NEC semiconductor
Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on , base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids , Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended


Original
PDF 2SD2463 2SD2463 C11531E) TRANSISTOR K 314 NEC semiconductor
2002 - 2SD2402

Abstract: transistor 2sD2402 Transistor Marking EY
Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1571 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , local NEC representative for availability and additional information. Document No. D16155EJ2V0DS00


Original
PDF 2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY
Supplyframe Tracking Pixel