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Part Manufacturer Description Datasheet Download Buy Part
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver

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1998 - Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , switching applications, by using MOSFET bootstrap techniques, they can be used for high-side load control , drive circuit would allow a lower voltage transistor , Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor , MOSFET BSN10 Applications


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PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
2006 - S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY P-channel power mosfet SO-8 IPS09N03LA TDA21102 mosfet all mosfet equivalent book
Text: N-Channel MOSFET OptiMOS2 Transistor N-Channel MOSFET OptiMOS2 Transistor N-Channel MOSFET OptiMOS2 Transistor N-Channel MOSFET OptiMOS2 Transistor N-Channel MOSFET OptiMOS2 Transistor OptiMOS2 Transistor N-Channel MOSFET OptiMOS2 Transistor N-Channel MOSFET OptiMOS2 Transistor N-Channel MOSFET N-Channel MOSFET OptiMOS2 Transistor N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET , Transistor OptiMOS2 Transistor OptiMOS2 Transistor P-Channel MOSFET OptiMOS2 Transistor OptiMOS2


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PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY P-channel power mosfet SO-8 IPS09N03LA TDA21102 mosfet all mosfet equivalent book
2003 - TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
Text: on topology and switching transistor * supply from independent voltage source 6 PWM + CCM PFC , Transistor Forward Converter Single-ended Forward Converter Boost Converter T1 D1 LOUT VIN , , ICE3DS01 CIN Q1 D2S Q1 COUT VOUT D1P Disadvantages Power transistor drain-source , Advantages Demagnetizing the core is no problem Simple circuitry Disadvantages Power transistor , MOSFET drain-source voltage VDS = VI Core demagnetization is no problem The transformer may have a high


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PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
1999 - D45 TRANSISTOR

Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent power transistor MTBF IGBT module an363 ST Power bipolar transistors Selection guide IGBT Designers Manual
Text: resistance makes the MOSFET an easier device to parallel than a bipolar transistor . 4.1.2 VGS(th) and VGS , purpose of this paper is to give a general overview of how to read a transistor specification. We will , the selection of the right transistor are discussed. Some common pitfalls are mentioned and the , specifications with care The specifications for each power switching transistor today cover between three and , of view, there is a real danger in over-specifying a transistor . Broadly speaking a general power


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2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
Text: Logic-Level PowerTrench MOSFET FDC634P P-Channel Enhancement Mode Field Effect Transistor ACPI , Supervisory Transistor FDN304P P-Channel 1.8V Specified PowerTrench MOSFET P-Channel 2.5V , Enhancement Mode Field Effect Transistor FDN304P P-Channel 1.8V Specified PowerTrench MOSFET FDC636P , Transistor FDR840P P-Channel 2.5V Specified PowerTrench MOSFET Expansion Slot Interface FDR844P , Transistor NDS336P P-Channel Logic-Level MOSFET NDS351AN N-Channel Logic-Level Enhancement Mode


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
2005 - cascode mosfet switching

Abstract: TPS61040 Application Report mosfet diagram TPS61041 SLVS413
Text: , using an external transistor in a cascode configuration enables the TPS61040 to be used in applications , . Transistor Selection , the TPS61040 . 2 Boost Regulator With Cascode Transistor , MOSFET , Q1, and current starts to flow from Vin through L1, the SW pin of the IC, Q1, and an internal , resistor, R1, and when this current reaches 400 mA, the controller turns the internal MOSFET off. The


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PDF SLVA209 TPS61040 cascode mosfet switching Application Report mosfet diagram TPS61041 SLVS413
1999 - irf840 pwm ac motor

Abstract: transistor irf840 frequency range irf840 mosfet TRANSISTOR mosfet IRF840 inverter irf840 pwm for dc to dc chopper using igbt 200v dc motor igbt switched reluctance motor IGBT pwm ac chopper control of single phase induction STGP10N50
Text: transistor . It can be seen that the MOSFET has the lower losses below 5A peak current, and the IGBT above , . Comparison of 500V IGBT and MOSFET in a single transistor chopper Losses (W) 60 MOSFET 40 20 , MOSFET at least as a PWM switching transistor . Additionally, when operating from a mains supply , APPLICATION NOTE COMPARISON OF MOSFET AND IGBT TRANSISTORS IN MOTOR DRIVE APPLICATIONS by B. Maurice, G. Izzo, T. Castagnet 1. INTRODUCTION 3.1 Single Transistor Chopper The increase of the


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1995 - tektronix 576 curve tracer

Abstract: 10063 mosfet 4b drive motor 10A with transistor P channel MOSFET application circuits of IRF330 tektronix type 576 curve tracer n mosfet depletion IRF450 IRF330 C1995
Text: 2 Lateral MOSFET Transistor Biased for Forward Current Conduction TL G 10063 ­ 3 FIGURE 3 , ­ 41 a MOSFET Transistor Construction Showing Location of the Parasitic NPN Transistor , transistor incorporated within the MOSFET shown schematically in Figure 4a Current flow needed to charge up , inherent PN diode in anti-parallel to the MOSFET transistor (see Figure 4b ) Because of its extensive , comparing MOSFET operation to a bipolar transistor the linear and saturated regions of the bipolar are


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2004 - list of P channel power mosfet

Abstract: BT151 MOSFET Transistor smd BQ 22 SSTU32964 smd transistor bq 22 A114 pnp TEA1620P equivalent SMD Transistor PNP Switching circuit, Inverter, Interface circuit, Driver circuit TEA1622 BQ 24 smd semiconductors
Text: , 30 and 60 V N-channel MOSFETs in SOT416 P 4 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor , /pip/PBSS5480X Discretes 80 V, 4 A PNP low VCEsat (BISS) transistor Extending Philips' already , General Purpose Transistor SOT223 (SC-73) PESD5V0S2BT SOT23 PBSS4160DS 60 V, 1 A NPN/NPN Low VCEsat (BISS) transistor SOT457 (SC-74) PBSS4160K 60 V, 1 A NPN Low VCEsat (BISS) transistor SOT346 (SC-59) PMEG2005AEL 20 V, 0.5 A very low VF MEGA Schottky rectifier SOD882


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PDF P89LPC932A1 LPC932 OT416 PBSS5480X SSTU32864, SSTU32865, SSTU3286 list of P channel power mosfet BT151 MOSFET Transistor smd BQ 22 SSTU32964 smd transistor bq 22 A114 pnp TEA1620P equivalent SMD Transistor PNP Switching circuit, Inverter, Interface circuit, Driver circuit TEA1622 BQ 24 smd semiconductors
2012 - E-MOSFET

Abstract: emosfet R00C
Text: -202 PRELIMINARY The CPC1590 charges and discharges an external MOSFET transistor . The selection of the MOSFET , . 2.2.1 Transistor Switching Characteristics Where CRSS is the MOSFET gate-drain capacitance (averaged , storage capacitor (CST) to provide the charge needed for fast turn-on switching of an external MOSFET device. When the MOSFET is on, the photo current from the LED keeps the MOSFET gate biased to the rated voltage continuously. The CPC1590 uses charge from the load voltage when turning off to restore the MOSFET


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PDF AN-202 CPC1590 AN-202-R00C E-MOSFET emosfet R00C
2001 - PNP Transistor MOSFET

Abstract: logic gate P-mosfet TRANSISTOR mosfet TSM108 105M 700M TSM108I car battery charger circuit diagram
Text: Current Controller TSM108 is designed to drive a P-Channel MOSFET transistor in Switch Mode Step Down , for the PWM generator to set the switching duty cycle of the P-Channel MOSFET transistor . The PWM , external components change, either a P-channel MOSFET , or a PNP transistor . The choice of the transistor , commutation when using a bipolar PNP transistor . P- MOSFET ? PNP Transistor ? MOSFET P Q1 GD TSM108 , ratio of the PNP transistor is very attractive, whereas above 200mA, the P-channel Mosfet takes the


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PDF TSM108 TSM108 PNP Transistor MOSFET logic gate P-mosfet TRANSISTOR mosfet 105M 700M TSM108I car battery charger circuit diagram
TRANSISTOR REPLACEMENT GUIDE

Abstract: TRANSISTOR mos canal p HMA20 All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p SK17 p channel de mosfet PX28
Text: MOSFET Analyser Model: HMA20 Operation E G AT RCE SO U AIN DR N EL HAN L N C ANNE , almost any enhancement mode MOSFET . With a press of the button, the Analyser will: · Verify the MOSFET , . Analyseur de transistor MOS Modèle: HMA20 Fonctionnement de l'appareil L'analyseur HMA20 est un appareil microcontrollé perfectionné qui analyse rapidement et facilement presque tout transistor MOS. En appuyant sur le bouton, l'appareil: · Vérifie que le transistor MOS fonctionne. · Identifie la grille (gate), la source


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PDF HMA20 HMA20 80x56x25mm TRANSISTOR REPLACEMENT GUIDE TRANSISTOR mos canal p All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p SK17 p channel de mosfet PX28
2001 - 100w high power car amplifier

Abstract: 105M 700M TSM108 TSM108I pwm step down 100W transistor UV1
Text: MOSFET transistor in Switch Mode Step Down Converter applications. Its two integrated operational , cycle of the P-Channel MOSFET transistor . The PWM generator comprises an oscillator (saw tooth) and a , a P-channel MOSFET , or a PNP transistor . The choice of the transistor is completely to the user , . P- MOSFET ? PNP Transistor ? MOSFET P Q1 GD TSM108 D1 L1 GD TSM108 The most immediate way to choose from a P-channel MOSFET or a PNP transistor is to consider the ratio between the


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PDF TSM108 TSM108 100w high power car amplifier 105M 700M TSM108I pwm step down 100W transistor UV1
2001 - 100w high power car amplifier

Abstract: 105M 700M TSM108 TSM108I mosfet 100w 12v amplifier 100w car amplifier
Text: and Current Controller TSM108 is designed to drive a P-Channel MOSFET transistor in Switch Mode Step , for the PWM generator to set the switching duty cycle of the P-Channel MOSFET transistor . The PWM , external components change, either a P-channel MOSFET , or a PNP transistor . The choice of the transistor , commutation when using a bipolar PNP transistor . P- MOSFET ? PNP Transistor ? MOSFET P Q1 GD TSM108 , ratio of the PNP transistor is very attractive, whereas above 200mA, the P-channel Mosfet takes the


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PDF TSM108 TSM108 100w high power car amplifier 105M 700M TSM108I mosfet 100w 12v amplifier 100w car amplifier
2000 - 200 Amp bridge mosfet

Abstract: car battery charger transistor UV1
Text: and Current Controller TSM108 is designed to drive a P-Channel MOSFET transistor in Switch Mode Step , for the PWM generator to set the switching duty cycle of the P-Channel MOSFET transistor . The PWM , a P-channel MOSFET , or a PNP transistor . The choice of the transistor is completely to the user , . P- MOSFET ? PNP Transistor ? Q1 MOSFET P L1 GD TSM108 The most immediate way to choose from a P-channel MOSFET or a PNP transistor is to consider the ratio between the output power of the


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PDF TSM108 SO-14 TSM108 200 Amp bridge mosfet car battery charger transistor UV1
FET pair n-channel p-channel

Abstract: P-Channel Depletion-Mode MOSFET
Text: The MOSFET transistor family consists of two main types, these being “depletionmode” and , difference between the operation of any MOSFET and the bipolar junction transistor (BJT) is that the FET is , “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has


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2012 - 431 transistor

Abstract: CPC1580P
Text: MOSFET transistor without the need of an external power supply. Control of the power MOSFET transistor is , with a MOSFET transistor for remote switching of DC loads (Figure 1) and two MOSFETS and a diode at , removed, the gate current stops flowing and the PNP bipolar transistor is on and is discharging the MOSFET , current, and MOSFET current must be >20M over the temperature rating of the part. 4.3 Transistor Selection The CPC1580 charges and discharges an external MOSFET transistor . The selection of the MOSFET is


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PDF 3750Vrms CPC1580 CPC1580 DS-CPC1580-R00H 431 transistor CPC1580P
2001 - transistor UV1

Abstract: High Current Switching Applications transistor 72m transistor
Text: MOSFET transistor in Switch Mode Step Down Converter applications. Its two integrated operational , P-Channel MOSFET transistor . The PWM generator comprises an oscillator (saw tooth) and a comparator which , P-channel MOSFET , or a PNP transistor . The choice of the transistor is completely to the user , schematic shows how to improve the switch off commutation when using a bipolar PNP transistor . P- MOSFET , choose from a P-channel MOSFET or a PNP transistor is to consider the ratio between the output power of


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PDF TSM108 TSM108 transistor UV1 High Current Switching Applications transistor 72m transistor
2005 - NID6005N

Abstract: negative temperature coefficient devices short forms mosfet nid5005 NID6002 NIF5006N NIF6006N NID6002n application notes NCV7513 NID9N05CL
Text: current limitation, and standard MOSFET power transistor switches. This paper describes the technology , transistor and as such, the magnitude of this voltage determines the operation mode of the MOSFET switch , MOSFET capacitance thru Rg2 limits the current in the pulldown transistor . This results in limiting the , A/div) transistor pulls the main power MOSFET gate to ground, turning off the device. A , AND8202/D Low-Side Self-Protected MOSFET Prepared by: Don Zaremba ON Semiconductor http


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PDF AND8202/D NID6005N negative temperature coefficient devices short forms mosfet nid5005 NID6002 NIF5006N NIF6006N NID6002n application notes NCV7513 NID9N05CL
2013 - Not Available

Abstract: No abstract text available
Text: of a discrete power MOSFET transistor without the need of an external power supply. Control of the power MOSFET transistor is accomplished by the application of sufficient input LED current to activate , . The CPC1580 is used in conjunction with a MOSFET transistor for remote switching of DC loads (Figure , bipolar transistor is on and is discharging the MOSFET gate. The MOSFET is now off. At this point, the , MOSFET current must be >20M over the temperature rating of the part. 4.3 Transistor Selection


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PDF CPC1580 CPC1580 3750Vrms DS-CPC1580-R01
2009 - E-MOSFET

Abstract: emosfet Switchmode power supply handbook cpc1590 AN-202 FQP20N06L IRLWI630A
Text: -202 2.2 Transistor Selection The CPC1590 charges and discharges an external MOSFET transistor . The , the user to turn on the gate of a MOSFET and keep it on until the LED current is turned off. The , provide the charge needed for fast turn-on switching of an external MOSFET device. When the MOSFET is on, the photo current from the LED keeps the MOSFET gate biased to the rated voltage continuously. The CPC1590 uses charge from the load voltage when turning off to restore the MOSFET gate's switching charge


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PDF CPC1590 AN-202 AN-202-R00B E-MOSFET emosfet Switchmode power supply handbook AN-202 FQP20N06L IRLWI630A
2012 - E-MOSFET

Abstract: No abstract text available
Text: charges and discharges an external MOSFET transistor . The selection of the MOSFET is determined by the , for 45.4V @ 11.2A peak pulse current, well below the 60V. The transistor (Q1) is a 50V MOSFET , which , for fast turn-on switching of an external MOSFET device. When the MOSFET is on, the photo current from the LED keeps the MOSFET gate biased to the device's specified gate to source voltage (VGS) continuously. The CPC1580 uses charge from the load voltage when turning off to recover the MOSFET gate


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PDF AN-201 CPC1580 AN-201-R00D E-MOSFET
2009 - IRF540NS

Abstract: 1423C 15-V IRF1324 AN75-16 TPS2490 SR-332 SMAJ60A BZX84C7V5 SLVC033
Text: transistor in a typical hot-swap application. Because the MOSFET has physical limits, one can analyze the , to control start-up inrush and fault currents. During these transient events, the MOSFET dissipates power greater than steady-state and can well exceed the thermal limits of the MOSFET . These factors require consideration when selecting the MOSFET . This application report describes the steps required to properly choose a MOSFET that can meet the power dissipation requirements under all of the event areas. An


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PDF SLVA379 IRF540NS 1423C 15-V IRF1324 AN75-16 TPS2490 SR-332 SMAJ60A BZX84C7V5 SLVC033
2012 - SMD transistor Marking 1x

Abstract: No abstract text available
Text: Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA , MOSFET transistor MOSFET transistor static characteristics drain-source on-state resistance 80 102 m , V MOSFET transistor © NXP B.V. 2012. All rights reserved Product data sheet 21 December , 0 - 75 - 25 25 75 125 Tj (°C) 175 Fig. 1. MOSFET transistor : Normalized total power dissipation as a function of junction temperature Fig. 2. MOSFET transistor


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PDF PMFPB8032XP DFN2020-6 OT1118) SMD transistor Marking 1x
robert fried

Abstract: high power pulse generator with mosfet all power transistor
Text: transistor Second Breakdown of bipolar transistor BVDSS or BVCEO Log IDS Figure 2. Comparison of SOA for Power MOSFET and Power Bipolar Transistor 10 µs 100 µs IDM 1 ms ID 10 ms D.C , reviewed. In addition, the differences between Power MOSFET maximum ratings and Power Bipolar Transistor maximum ratings will be discussed. MOSFET VS. Bipolar Transistor MOSFETs have two major advantages , the D.C. current gain, hfe of a bipolar transistor decreases at high current levels, the MOSFET


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