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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TLP627M TLP627M ECAD Model Toshiba Electronic Devices & Storage Corporation Photocoupler (photodarlington transistor output), DC input, 5000 Vrms, DIP4
SSM6K513NU SSM6K513NU ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 15 A, 0.0089 Ohm@10V, UDFN6B
TK065N65Z TK065N65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TO-247
TK1K7A60F TK1K7A60F ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 4.0 A, 1.7 Ohm@10V, TO-220SIS
TK2K2A60F TK2K2A60F ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 3.5 A, 2.2 Ohm@10V, TO-220SIS
TK4K1A60F TK4K1A60F ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

transistor marking s72 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - s72 sot 23

Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. SOT-23 Pwr. Dispn. TC=25°C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA V min typ max 1.0 2.0 3.0 ­ 2.0 2.5 D-S On , Current TC=25°C Type Marking V max A max W max BS850 S50 -60 -0.25 0.31 *: Pulse test width 80µs, 1% duty , latest comprehensive data to fully support these parts is readily available. DMOS TRANSISTOR


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PDF BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor
transistor SMD s72

Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002= S72 Designed for High Speed Pulse Amplifier and Drive Application ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) VALUE DESCRIPTION SYMBOL 60 VDSS Drain Source Voltage VDRG 60 Drain Gate Voltage 20 VGSS Gate Source Voltage ID 200 Maximum Drain


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PDF 2N7002 OT-23 2N7002 C-120 2N7002Rev021104E transistor SMD s72 S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
transistor s72

Abstract: FP-Series FP104 FP103 FP102 FP101 B1121 sanyo CG di621 B1396
Text: =25t Related Type No. (Chips used) ( Transistor ) (Diode) ( Transistor ) (Diode) VCE0 (V) >c (A , Electric Co., Ltd. Semiconductor Company, TR Division. 37 r ■7Tti7D7la 0024bSS S72 ■t MT990208TR


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PDF FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2151X2 FP403 transistor s72 FP-Series B1121 sanyo CG di621 B1396
transistor s72

Abstract: S72 transistor BUK436-200A BUK436-200B buk436
Text: Specification PowerMOS transistor BUK436-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies , PowerMOS transistor BUK436-200A/B STATIC CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL , PHILIPS/DISCRETE bTE ]> ■bbS3S31 DDBDMb? S72 MAPX Philips Semiconductors Product Specification PowerMOS transistor BUK436-200A/B Fig. 4. Transient thermal impedance. Zmhmb = f(t); parameter D = t/T


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PDF bbS3T31 DQ304b5 BUK436-200A/B BUK436 -200A -200B transistor s72 S72 transistor BUK436-200A BUK436-200B
BLV80-28

Abstract: TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
Text: bSE T> 711002b GübETiö 734 MPHIN PHILIPS INTERNATIONAL BLV80/28 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f , optimum temperature profile; • gold metallization ensures excellent reliability. The transistor has a , bSE D ■711DÖ2b DGbBGOO TTO V.H.F. power transistor bSE D 711002b GDb3003 7TT IPHIN PHILIPS , Respective Manufacturer PHILIPS INTERNATIONAL V.H.F. power transistor fe.SE D ■7110flEfei DDti3DDE Ûb3


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PDF 711002b BLV80/28 OT-121 00b3D0L. BLV80-28 TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
BU508 TRANSISTOR equivalent

Abstract: BU508 AFI TRANSISTOR equivalent BU208 BU208A equivalent TO3 HEATSINK BU208A
Text: 2 illustrates the elements contributing to the thermal resistance of a transistor heatsink assem , duration = 300 (js. duty cycle = 1.5 %. Safe Operating Area (TO-3). &- S7?2 Safe Operating Area (TO


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PDF BU208/508/508FI BU208A/508A/508AFI BU208/A, BU508/A BU508FI/AFI O-218 ISOWATT218 O-218/ISOWATT218) BU208/508/508FI-BU208A/508A/508AFI BU508 TRANSISTOR equivalent BU508 AFI TRANSISTOR equivalent BU208 BU208A equivalent TO3 HEATSINK BU208A
transistor s72

Abstract: PT6530-LQ PT653 transistor s68 ptc6530-lq transistor D209 DIODE S45 transistor s49 PT6530 D226 diode
Text: prevent shorts, since these outputs are unbalanced CMOS transistor outputs, these outputs will not be , S54 S55 S56 S57 S58 S59 S60 S61 S62 S63 S64 S65 S66 S67 S68 S69 S70 S71 S72 S73 , S72 S73 KS1/S75 KS2/S76 COM1 COM2 COM3 COM4 D153 D157 D161 D165 D169 D173 D177


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PDF PT6530 PT6530 MS-026 transistor s72 PT6530-LQ PT653 transistor s68 ptc6530-lq transistor D209 DIODE S45 transistor s49 D226 diode
dv2810

Abstract: dv2810s 176/transistor WW 179 593 PH 275 v Stackpole 57
Text: 894 70 .80 -90 7.76 110 .10 35 .76 -87 «0 S72 11.8 138 -19.1 581 -1.97 .588 106 80 .77 -99 7.0 104 , are aware of its nature and of these necessary safety precautions. In particular the transistor should


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PDF St4250S aDDD44[ DV2810S 175MHz Cto150Â dv2810 176/transistor WW 179 593 PH 275 v Stackpole 57
srb-na-r-c 24

Abstract: SRB-NA-R-C srb-na-r-c 14 - 24 AZR 31 To k2-09a10 wiring diagram srb-na-r-c.19 srb-na-r srb301lc 211-AN srb-na-r-c 20
Text: diagram J A1 X1 S11 S12 S22 S71 S72 S82 S92S102 S112 S122 X3 X2 S31 S32 S42 S51 S52 S62 13 23 F1 , KA KB S11 S71 S11 S72 N 3 S12 S72 Y1 S22 S82 Indication contacts S31 S82 A , with positive-guided contacts. Wiring diagram J L1 A A1 X1 S11 S12 S22 S71 S72 S82 , A1.1 Y1 Y2 Y3 Y4 Y5 Y6 A2 KA KB S11 S71 S11 S72 N 3 S12 S72 Y1 S22 S82 , D-fuse 1 NC contact indicating contact: 2 A/24 VDC Y1 - Y8: 8 transistor outputs 100 mA total


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PDF Kapitel17 srb-na-r-c 24 SRB-NA-R-C srb-na-r-c 14 - 24 AZR 31 To k2-09a10 wiring diagram srb-na-r-c.19 srb-na-r srb301lc 211-AN srb-na-r-c 20
Not Available

Abstract: No abstract text available
Text: lower side transistor drive. OUT2 1 PWM controls duty cycle ratio by lower transistors. OUT3 , . Can be used for wiring. 7 tn ? G 7 b D0a305b S72 No. 6201-5/7 LB1876 Equivalent Circuit


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PDF LB1876 3235-HSOP36 D0a305b
2N4001 diode

Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
Text: temperature at Ihe rate o f S.72 · J E D E C registered data T e x a s I NICn strum ents ORPORATED P O S T , transistor parameters. *J E D E < registered data 971 5-134 T e x a s In IN C O R P O R A T E


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PDF 2N4000, 2N4001 2N4000 2N4001 diode diode 2n4001 diode 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
l31c

Abstract: STO 23-5 Voltage Regulators TPS7250 TPS7248Y TPS7248Q TPS7233Y TPS7233Q TPS7201Q TPS7201 SLVS ST
Text: innovation has enabled the usual pnp pass transistor to be replaced by a PMOS device. Because the PMOS pass , INPUT VOLTAGE 250 200 150 U c « O I o 100 50 - TA 'o 25°C = 250 mA TF S72 ; \ T 3 PS72 \ 48 , S72 ned >1 W to 2. nth 5 V V —1 u TI »S7S .33, T >S7i 48 TF ' S72 50 - 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 V| - , transistor is a voltage-controlled device and, unlike a PNP transistor , does not require increased drive


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PDF TPS7201Q, TPS7233Q, TPS7248Q, TPS7250Q TPS7201 TPS7233Y, TPS7248Y, TPS7250Y SLVS102C TPS7250) l31c STO 23-5 Voltage Regulators TPS7250 TPS7248Y TPS7248Q TPS7233Y TPS7233Q TPS7201Q SLVS ST
Not Available

Abstract: No abstract text available
Text: 60 Temperature Ta(°C) S72 80 100 MB3773 TYPICAL CHARACTERISTIC CURVES (Continued , Using NPN transistor Vcc(5V) b Using PNP transistor (Continued) 16 374175b ODesma AL>3 c Using NPN transistor Vcc (5V) o MB3773 1 Logic circuit 8 2 7 3 6 4 5 R2=1k Ct : TtT d Using PNP transistor Vcc (5V) o -MB3773 Logic


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PDF DS04-27401-4E MB3773 MB3773 10ki2 G025S03
Not Available

Abstract: No abstract text available
Text: 7 ^ 2 3 7 0D4L50L4 f l t. 3 ■SGTH SGS-THOMSON ¡LiOT(s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss STP 50N 06L STP50N 06LFI R d s ( o ii ) Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■TYPICAL RDS(on) = 0.024 Q AVALANCHE RUGGED TECHNOLOGY ■100% AVALANCHE TESTED . REPETITIVE AVALANCHE , MiaWEILBSTSW*® 1099 STP50N06L/FI 7 ^ 2 3 7 D04bS07 S72 ■S6TH Thermal Impedance For


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PDF 0D4L50L4 STP50N06L STP50N06LFI STP50N 06LFI QCmb510 STP50N06L/FI
2014 - D239 TRANSISTOR

Abstract: transistor d358 d331 TRANSISTOR equivalent transistor d332 d427 transistor equivalent D331 transistor D333 transistor D417 transistor transistor d336 d327 TRANSISTOR
Text: S62 S64 S65 S66 S67 S68 S69 S71 S70 S72 S73 S74 S75 Pin , , since these outputs are unbalanced CMOS transistor outputs, these outputs will not be damaged by , S65 S66 S67 S68 S69 S70 S71 S72 S73 S74 S75 S76 S77 KS1/S79 KS2/S80 KS3/S81 KS4/S82


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PDF BU97530KVT-M 89segx5COM) BU97530KVT-M D239 TRANSISTOR transistor d358 d331 TRANSISTOR equivalent transistor d332 d427 transistor equivalent D331 transistor D333 transistor D417 transistor transistor d336 d327 TRANSISTOR
Not Available

Abstract: No abstract text available
Text: +0.3V. * 2) The high current drive transistor is the N-ch transistor of Port C (PC) Note) Usage exceeding , oscillation 777 - 12 - 6362303 □□lfl5R3 S72 SONY CXP84332/8¿3¿0 Fig. 3. Event


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PDF CXP84332/84340 CXP84332/84340 CXP84120/84124 16-bit 400ns 10MHz HC-49/U03 768kHz HC-49/U QFP-80P-L01
Not Available

Abstract: No abstract text available
Text: Corporation 17313bS 0057211 S72 Cable: BBRCORP • • Tucson, AZ 85734 Telex: 066-6491 , noise to the circuit. A diode formed with a 2N4117A transistor as shown in Figure 5 assures low


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PDF INA111 INA111 106dB ZZ211
2003 - D226 diode

Abstract: d206 diode transistor D227 d227 diode d228 diode d235 transistor D225 Diode D223 DIODE D226 A DIODE transistor s68
Text: . 6266-4/37 LC75804E, LC75804W KS1/S75 COM1 COM2 COM3 COM4/S74 S73 S72 S71 S70 S69 S68 , /S74 S73 S72 S71 S70 S69 S68 S67 S66 S65 S64 S63 S62 S61 S60 S59 S58 S57 S56 S55 , prevent shorts, since these outputs are unbalanced CMOS transistor outputs, these outputs will not be , S46 D136 D137 D138 S72 D214 D215 D216 S21 D61 D62 D63 S47 D139 , D283 D284 S34 D133 D134 D135 D136 S72 D285 D286 D287 D288 S35


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PDF ENN6266A LC75804E, LC75804W LC75804E LC75804W 151A-QFP100E LC75804E] QFP100E QIP100E) 3181C-SQFP100 D226 diode d206 diode transistor D227 d227 diode d228 diode d235 transistor D225 Diode D223 DIODE D226 A DIODE transistor s68
1999 - D226 diode

Abstract: transistor D227 d2599 transistor d228 D226 A DIODE d227 diode transistor d288 transistor D291 Diode D188 diode d226
Text: COM3 COM4/S74 S73 S72 S71 S70 S69 S68 S67 S66 S65 S64 S63 S62 S61 S60 S59 S58 S57 , (QFP100E) 100 31 30 (Top view) COM3 COM4/S74 S73 S72 S71 S70 S69 S68 S67 S66 S65 S64 , CMOS transistor outputs, these outputs will not be damaged by shorting when these outputs are used to , D138 S72 D214 D215 D216 S21 D61 D62 D63 S47 D139 D140 D141 S73 , S34 D133 D134 D135 D136 S72 D285 D286 D287 D288 S35 D137 D138


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PDF ENN6266 LC75804E, LC75804W LC75804E LC75804W 3151-QFP100E LC75804E] QFP100E QIP100E) 3181B-SQFP100 D226 diode transistor D227 d2599 transistor d228 D226 A DIODE d227 diode transistor d288 transistor D291 Diode D188 diode d226
Not Available

Abstract: No abstract text available
Text: the high voltage bi-polar power transistor line drivers. This allows for simplier, less elaborate , 000W S S72 2-213


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PDF MH88628 MH88632, MH88620 10ki2 24ki2 250VAC, TISP2300L, P2703AB
transistor d234

Abstract: D234 transistor d188 transistor
Text: are unbalanced CMOS transistor outputs, these outputs will not be damaged by shorting when these , S69 S70 S71 S72 S73 COM4/S74 KS1/S75 KS2/S76 COM1 COM2 COM3 D157 D160 D163 D166 , S66 S67 S68 S69 S70 S71 S72 S73 KS1/S75 KS2/S76 COM4 D4 D8 D12 D16 D20 D24 D28 D32


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PDF PT6530 PT6530 MS-026BED transistor d234 D234 transistor d188 transistor
3-pin D128 transistor

Abstract: transistor d288 D234 transistor D223 DIODE transistor D291 PT6530-LQ d226 diode transistor D227 transistor D195 transistor d228
Text: inserted in the timing lines to prevent shorts, since these outputs are unbalanced CMOS transistor outputs , S67 S68 S69 S70 S71 S72 S73 COM4/S74 KS1/S75 KS2/S76 COM1 COM2 COM3 D157 D160 , S62 S63 S64 S65 S66 S67 S68 S69 S70 S71 S72 S73 KS1/S75 KS2/S76 COM4 D4 D8 D12 D16


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PDF PT6530 PT6530 MS-026BED 3-pin D128 transistor transistor d288 D234 transistor D223 DIODE transistor D291 PT6530-LQ d226 diode transistor D227 transistor D195 transistor d228
sanyo ccb

Abstract: transistor d231 diode d229
Text: 1.2max (1.0) (1.0) SANYO : TQFP100(14X14) COM3 COM4/S74 S73 S72 S71 S70 S69 S68 S67 , lines to prevent shorts, since these outputs are unbalanced CMOS transistor outputs, these outputs will , S59 D233 D234 D235 D236 S72 D285 D286 D287 D288 S60 D237 D238 , D94 D95 D96 S71 D211 D212 D213 S33 D97 D98 D99 S72 D214 D215


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PDF ENA1425 LC75806PT LC75806PT A1425-35/35 sanyo ccb transistor d231 diode d229
SN8PC20SG

Abstract: P17W SN8PC01 DIODE S59 marking DIODE S61 marking SN8PC20 IRD2 SSOP20 IRC5 transistor marking s72
Text: : .82 MARKING DEFINITION , .83 MARKING INDETIFICATION SYSTEM .83 MARKING EXAMPLE


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PDF SN8PC20 10F-1, 15F-2, SN8PC20SG P17W SN8PC01 DIODE S59 marking DIODE S61 marking SN8PC20 IRD2 SSOP20 IRC5 transistor marking s72
2011 - Not Available

Abstract: No abstract text available
Text: Conditions Min. Typ. Max. Unit Circuit - Average value Nch open drain output product Output transistor Nch, IOUT = 2 mA Output transistor Nch, IOUT = 2 mA CMOS output product Output transistor Pch, IOUT = -2 mA Nch open drain output product Output transistor Nch, VOUT = 5.5 V - - tAW + tSL 2.7 - - - VDD - 0.4 - , . Unit Circuit - Average value Nch open drain output product Output transistor Nch, IOUT = 2 mA Output transistor Nch, IOUT = 2 mA CMOS output product Output transistor Pch, IOUT = -2 mA Nch open drain output


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PDF S-5715 OT-23-3
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