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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor marking code wgs Datasheets Context Search

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2007 - transistor marking code wgs

Abstract:
Text: B1 3 C2 EHA07174 Type BCR116 BCR116F BCR116S BCR116W Marking WGs WGs WGs WGs 1=B 1=B 1 , 0.5 0.5 Marking Layout (Example) 1.15 2005, December Date code Pin 1 BCR108T Type code , . Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 , , June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing , Marking Layout (Example) Manufacturer 1.05 Pin 1 BCR847BF Type code Standard Packing Reel


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PDF BCR116. BCR116S: BCR116/F BCR116W BCR116S EHA07184 EHA07174 BCR116 BCR116F transistor marking code wgs wgs SOT-23
2009 - Not Available

Abstract:
Text: 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 , 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code , Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking , BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit , R1 R2 1 B 2 1 2 3 E E1 B1 C2 EHA07184 EHA07174 Type Marking


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PDF BCR116. BCR116S: BCR116 BCR116W BCR116S EHA07184 EHA07174
2005 - marking WGs sot23

Abstract:
Text: BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W Marking WGs WGs WG WGs WGs WGs 1=B 1=B 1=B 1=B 1 , Marking Layout Manufacturer Pin 1 Type code 0.9 BCR847BF Example Packing Code E6327 , 0.17 Stencil apertures Marking Layout Type code Laser marking Packing Code E6327: Reel , BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , 0.15 ±0.1 0.5 M 0.20 M A Foot Print 0.4 0.65 0.65 0.4 0.5 0.5 Marking Layout


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PDF BCR116. BCR116S: BCR116/F/L3 BCR116T/W BCR116S EHA07184 EHA07174 BCR116 BCR116F BCR116L3 marking WGs sot23 transistor marking code wgs
2007 - infineon marking code B2 SOT23

Abstract:
Text: Marking Layout (Example) 2005, December Date code BCR108T Type code Pin 1 Standard Packing , 0.45 Pin 1 1.75 0.9 8 2007-07-24 BCR116. Date Code marking for discrete packages , 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM , . Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code , BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit


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PDF BCR116. BCR116S: BCR116/F BCR116W BCR116S EHA07184 EHA07174 BCR116 BCR116F infineon marking code B2 SOT23 marking WGs sot23 transistor marking code wgs BCR116S BCR116W BCR116F marking code R2 sot23 BCR116 SC75 SOt323 marking code 6X
2006 - BCR116

Abstract:
Text: Type Marking Pin Configuration BCR116 WGs 1=B 2=E 3=C - - - SOT23 , 0.65 0.4 0.4 0.5 0.5 Marking Layout (Example) 2005, December Date code BCR108T Type , . Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 , 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code , Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking


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PDF BCR116. BCR116S: BCR116/F/L3 BCR116T/W BCR116S EHA07184 EHA07174 BCR116 BCR116F BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W
2009 - marking WGs sot23

Abstract:
Text: C2 EHA07174 Type BCR116 BCR116S BCR116W Marking WGs WGs WGs 1=B 1=B Pin Configuration 2=E 2 , Marking Layout (Example) Small variations in positioning of Date code , Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking , BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example


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PDF BCR116. BCR116S: BCR116 BCR116W BCR116S EHA07184 EHA07174 BCR116S marking WGs sot23 transistor marking code wgs infineon marking code B1 SOT23
2004 - Not Available

Abstract:
Text: BCR116./SEMH13 NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=4.7k, R2=47k) · For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR116/F/L3 BCR116T/W C 3 BCR116S SEMH13 C1 , EHA07174 Type Marking Pin Configuration Package BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W SEMH13 WGs WGs WG WGs WGs WGs WG 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3


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PDF BCR116. /SEMH13 BCR116/F/L3 BCR116T/W BCR116S SEMH13 EHA07184 EHA07174 BCR116 BCR116F
ss98 transistor

Abstract:
Text: SIEMENS SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · ^GS(th) = 0.8.1.6 V BSS 98 Type BSS 98 Type BSS 98 BSS 98 BSS 98 Vds 50 V b 0.3 A %S(on) 3.5 £ 2 Package TO-92 Marking SS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 Tape and Reel Inform ation E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Rgs = 20 kQ , mA T, Typ. capacitances C= J ( V D S) parameter: Wgs =0v >f= 1 M^z Forward


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PDF Q62702-S053 Q62702-S517 Q62702-S635 E6288 E6296 E6325 BSS98 ss98 transistor transistor marking code wgs
2SK830

Abstract:
Text: SEC ELECTRON DEVICE N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK830 DESCRIPTION The 2SK830 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEATURES • Suitable for switching power supplies, actuater controls, and pulse circuits • Low R DS(on) • No second breakdown • Isolated mold package ABSOLUTE MAXIMUM RATINGS Maximum , Clamped p.G.@/vGS(on)=20v WGS (off)=-20V 777" 100 200 300 400 500 600 VDs-Drain t0 Source


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PDF 2SK830 2SK830 -V-90 1987M 2SK83
BUK454

Abstract:
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor 2SE D ^53131 ODSOMbO S BUK454-400A BUK454-400B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is , Components N AMER PHILIPS/DISCRETE 2SE D ■fab53131 OQSOMbl 4 m Power M OS transistor BUK454-400A BUK454 , Components N AMER PHILIPS/DISCRETE PowerMOS transistor ESE D bt.S3T31 C)0204ba k BUK454-400A BUK454 , Philips Components N AMER PHILIPS/DISCRETE 5SE D ■bbS3=i31 00S0Mb3 fi ■PowerMOS transistor BUK454


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PDF BUK454-400A BUK454-400B BUK454 -400A -400B T0220AB; T0220AB
2SK828

Abstract:
Text: NEC ELECTRON DEVICE N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR DESCRIPTION The 2SK828 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEATURES • Suitable for switching power supplies, actuater controls, and pulse circuits. • LOW R DS(on) • No second breakdown • Isolated mold package ABSOLUTE MAXIMUM RATINGS Maximum Temperatures , =100 n VGS(on) = 20V VGS(off) = -20V Clamped P.G. L=100WH >vGS(on)=20V WGS (off)=-20V 7IT


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PDF 2SK828 2SK828 1987M RQ100 2sk82 transistor 3884
BUK416-100AE

Abstract:
Text: Specification PowerMOS transistor BUK416-1OOAE/BE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power , PowerMOS transistor BUK416-1OOAE/BE STATIC CHARACTERISTICS "I", = 25 "C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V, (br)dss wgs (to) 'dss "gss Rds(on , transistor BUK416-100AE/BE 120 ID'/ or m alist xlC ur, mtl lera ling 110 ■too


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PDF G03D440 BUK416-1OOAE/BE OT227B BUK416 bb53R31 BUK416-1OO0E BUK416-100AE YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
BUX16

Abstract:
Text: STATE "Ôï 3fi7SDfil 0017bDM 3 387 5081 G E SOLID STATE "" " 17604 D , . /jr- /3 _ Pro Electron Power Transistors File Number'800 BUX16, BUX16A, BUX16B, BUX16C High-Voltage, High-Power « Silicon N-P-N Power Transistor For Switching and Linear Applications in Industrial, and Commercial , , inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. WGS -27S16 JEDEC , . Ic CONTINUOUS BASE CURRENT . IB TRANSISTOR DISSIPATION: At case


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PDF 0017bDM BUX16, BUX16A, BUX16B, BUX16C RCA-BUX16-serles 92LS-I9C9AI 92LS-IÃ BUX16 BUX168 BUX16A BUX16B BUX16C BUX18C equivalent of SL 100 NPN Transistor
BUK637-400A

Abstract:
Text: N AflER PHILIPS/DISCRETE ESE D PowerMOS transistor Fast Recovery Diode FET ¡3^53^31 GOEObTD 2 , field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly , Respective Manufacturer Philips Components N AMER PHILIPS/DISCRETE 2SE D PowerMOS transistor Fast , transistor BUK637-400A Fast Recovery Diode FET BUK637-400B REVERSE DIODE RATINGS AND CHARACTERISTICS T^ = , N AUER PHILIPS/DISCRETE BSE D ■fc,fc.53«131 0020b73 A ■PowerMOS transistor BUK637-400A Fast


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PDF BUK637-400A BUK637-400B BUK637 -400A -400B BUK637-400B P02S
TP8P10

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C • Designer's Data â , Drain-Source Breakdown Voltage Wgs = 'D = 025 mA> V(BR)DSS 100 — Vdc Zero Gate Voltage Drain Current (VD$ =


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PDF MTP8P10 tp8p10 AN569 bbc ds 17 MTP8P10 si08
MOTOROLA ONCORE UT plus

Abstract:
Text: antenna and operates off the coarse/acquisition (C/A) code tracking. The code tracking is carrier aided , eight channel code and carrier correlator section of the Oncore receiver PCB where a single, high speed , code and carrier correlator section) where the signal is split into eight parallel channels for signal detection, code correlation, carrier tracking, and filtering. The processed signals are synchronously , amplifiers, a pass transistor and a voltage divider to set the upper and lower limits of the under current


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1998 - RTCM-SC104 data format version 3.1

Abstract:
Text: used for position computations. The default is WGS -84. Differential GPS. Dilution Of Precision, ie , UTC VCC VDOP VSWR WGS -84 User's Manual (Version 1.2) SNA/UM98008 Angle above the horizon , spreading code used per satellite). Random Access Memory. Radio Frequency. The minimum signal level , . 2.1 Navigation Specifications · L1 frequency (1575.42 MHz) C/A code Receiver. · Number of , code execution. The following points should be noted: 1) 2) The action of the hardware reset is


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PDF SNA/UM98008 WGS-84 RTCM-SC104 data format version 3.1 RTCM-SC104 data format schematic diagram receiver satellite RTCM-SC104 V101 varicap diode nmea 0183 amplifier schematics power supply satellite receiver transistor c331 rtcm SC-104 specification version 2.1 message type 3 transistor 1971 mitsubishi
2007 - data circuit schematics satellite connector

Abstract:
Text: providing for the marking , collection, recycling and/or disposal of electrical and electronic equipment , Source Code Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 Compiling , . . . . . Dynamics Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , Precision LLA Position Fix . . . . . . . . . . . . . . . . . . 128 Report Packet 0x4B - Machine/ Code ID and , (1575.42 MHz) frequency, C/A code , 12-channel, continuous tracking receiver Update Rate TSIP 1 Hz


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CSG3001-18A04

Abstract:
Text: (5.12 kN) Code : 3AFE 5716 8480 Type marking S6475R F (kN) 5 d * h(mm) 45 * 20 3AFE 1000 , SLZF 117 (11.25 kN) Code 3AFE 5741 9709 Type marking S6426R S6594R FG1000AL-26-1430 WG14013 , SLZF 89A (7.20 kN) Code 3AFE 5716 8463 Old code Manufacturer Type marking F (kN) d , Mitsubishi Westcode Clamp SLZF 117 (11.25 kN) Code 3AFE 5741 9709 Type marking S6426W S6594W , ) Code 3AFE 5741 9709 Type marking S6426W S6594W FG1000AL-34-1440 WG14017B8D G14J17YNH


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PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
SOT89 transistor marking

Abstract:
Text: Lead Code : 1) BASE 2) EMITTER 3) COLLECTOR Marking Code : 55C (CMUT5551) Marking Code : 1FF (CMPT5551) 54C (CMUT5401) Marking Code : 5C5 (CMLT5551) C2L (CMPT5401) SOT-223 SOT-89 SOT-228 Bottom View Lead Code : 1) EMITTER 2) COLLECTOR 3) BASE Marking Code : Full Part Numbers Lead Code : 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR Marking Code : Full Part Numbers Lead Code , ) BASE Q1 Q1 Q1 Q2 Q2 Marking Code : Full Part Numbers For further information contact


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PDF OT-563 OT-523 OT-23 OT-89 OT-223 OT-228 600mA 500mA CMLT5551HC OT-563) SOT89 transistor marking SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 PNP TRANSISTOR SOT89 "PNP Transistor" sot89 "NPN TRANSISTOR" PNP Epitaxial Silicon Transistor sot223 10 marking code dual transistor
FZJ 131

Abstract:
Text: polysilicon CMOS, • Standard 16 lead plastic DIP/18 lead PLCC 1- transistor memory cell • 262,144 words by , ^r.mm/A 0|N V|H-r "II - ' wgs 'OS 'rp 'has 'chr S r 'wch 'WP W/m//////!//////imnL \mmmmnnmzm


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PDF MSM51C256RS/JS MSM51C256 DIP/18 MSM51C256-8 MSM51C256-10 MSM51C256-12 FZJ 131 dynamic ram binary cell MSM51C256RS
MARKING 67 SOT89

Abstract:
Text: ) BASE 4) EMITTER 5) COLLECTOR 6) COLLECTOR LEAD CODE : 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE : 1FHC MARKING CODE : C51 SOT-223 SOT-89 SOT-228 Bottom View LEAD CODE : 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE : CXT5551HC LEAD CODE : 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE : CZT5551HC LEAD CODE : 1) COLLECTOR 2) COLLECTOR 3) COLLECTOR 4) COLLECTOR 5) EMITTER Q2 6) BASE Q2 7) EMITTER Q1 8) BASE Q1 Q1 Q1 Q2 Q2 MARKING CODE


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PDF OT-228 OT-223 OT-89 OT-23 OT-563 600mA) 5551HC 600mA MARKING 67 SOT89 transistor 5551 sot-89 marking code transistor sot code transistor sot amplifier marking code a amplifier marking code D sot-223 code marking NPN Transistor 5551 datasheet
TRANSISTOR SMD MARKING CODE

Abstract:
Text: -23 Marking Code : C1AE CMPT3906E PNP Transistor 40V, 200mA VCE(SAT) = 0.2V hFE = 100 min./300 max. SOT-23 Marking Code : C2AE CMPT2222AE NPN Transistor 45V, 600mA hFE = 100 min./300 max. CMPDM7002A , SOD-323 Marking Code : S1 CMDSH2-4L Schottky Diode 40V, 200mA VF = 0.5V CMDSH05-4 Schottky Diode 40V, 500mA VF = 0.47V SOD-323 Marking Code : S2 CMDSH-4E Schottky Diode 40V, 200mA VF = 1.0V trr = 5.0ns SOD-323 Marking Code : S1E SOD-323 Marking Code : S2L SOD-323 Marking Code


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PDF 100mA 200mA OD-323 CMDSH05-4 500mA OT-23 TRANSISTOR SMD MARKING CODE 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode on semiconductor marking code sot MOSFET marking smd MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
2011 - S-5715ENDL1-M3T1U

Abstract:
Text: x x x 1 - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free , PF004-A-P-SD Package Drawing Code Tape MP003-C-C-SD PF004-A-C-SD Seiko Instruments Inc. Reel , product Output transistor Nch, IOUT = 2 mA Output transistor Nch, IOUT = 2 mA CMOS output product Output transistor Pch, IOUT = -2 mA Nch open drain output product Output transistor Nch, VOUT = 5.5 V , VOUT - Average value Nch open drain output product Output transistor Nch, IOUT = 2 mA Output


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PDF S-5715 OT-23-3 S-5715ENDL1-M3T1U marking TAW S-5715DCSL1-M3T1U POLE S-5715CCSL1-I4T1U S-5715DCDL1-M3T1U S-5715DNDL1-M3T1U
2011 - Not Available

Abstract:
Text: Structure 1. Product name S-5715 x x x x 1 - xxxx U Environmental code U: Lead-free (Sn 100 , Package Drawing Code Tape MP003-C-C-SD PF004-A-C-SD Reel MP003-Z-R-SD PF004-A-R-SD Land - PF004-A-L-SD , value Nch open drain output product Output transistor Nch, IOUT = 2 mA Output transistor Nch, IOUT = 2 mA CMOS output product Output transistor Pch, IOUT = -2 mA Nch open drain output product Output transistor Nch, VOUT = 5.5 V - - tAW + tSL 2.7 - - - VDD - 0.4 - - - - 5.0 26.0 - - - - 0.10 5.60 5.70 5.5


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PDF S-5715 OT-23-3
Supplyframe Tracking Pixel