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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor mar 826 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - transistor MAR 826

Abstract: BLF1047 BP317
Text: . 2001 Mar 22 6 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , Mar 22 7 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Mar 22 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES · High power gain PIN DESCRIPTION · Easy power


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PDF M3D390 BLF1047 OT541A 603516/04/pp11 transistor MAR 826 BLF1047 BP317
1997 - MAR 948 transistor

Abstract: transistor MAR 826 SMD TRANSISTOR MARKING 99r S949T S949TR
Text: transistor (inside of PLL), insert 10 kW collector resistor. 2 (8) TELEFUNKEN Semiconductors Rev. A2, 26- Mar , x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 1 (8) S949T , TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 S21 ANG deg ­4.7 ­9.5 ­14.0 ­18.4 ­23.1 ­27.4 ­31.9 ­35.9 ­39.9 ­44.0 ­47.9 ­51.6 ­55.3 ­59.0 ­62.5 ­66.0 ­69.4 ­72.7 ­76.0 ­79.4 ­ 82.6 ­85.6 , 101.6 96.9 92.1 87.6 82.6 78.0 74.0 69.7 65.0 60.5 56.3 51.9 47.1 LOG MAG dB ­62.24


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PDF S949T/S949TR S949T 927the D-74025 26-Mar-97 MAR 948 transistor transistor MAR 826 SMD TRANSISTOR MARKING 99r S949TR
smd transistor marking A6

Abstract: smd transistor TO4 transistor SMD t04 sot transistor SMD t04 smd transistor marking j9 MAR 948 transistor A19 SMD transistor fci dh 22 smd transistor marking HA SMD TRANSISTOR MARKING 99r
Text: Semiconductors Rev. A2, 26- Mar -97 1(8) This Material Copyrighted By Its Respective Manufacturer s949t/s949tr , feasible. Using open collector switching transistor (inside of PLL), insert 10 kfì collector resistor. 2 (8) TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 This Material Copyrighted By Its Respective , ^7.48 92.3 -0.65 -26.4 850 -1.98 -69.4 6.71 87.6 -41.39 103.5 -0.67 -28.0 900 -2.08 -72.7 6.52 82.6 , -44.01 129.4 -0.68 -33.0 1050 -2.47 - 82.6 6.02 69.7 -43.32 134.1 -0.70 -34.6 1100 -2.62 -85.6 5.80 65.0


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PDF s949t/s949tr S949T S949TR 26-Mar-97 smd transistor marking A6 smd transistor TO4 transistor SMD t04 sot transistor SMD t04 smd transistor marking j9 MAR 948 transistor A19 SMD transistor fci dh 22 smd transistor marking HA SMD TRANSISTOR MARKING 99r
2007 - 30521

Abstract: step motor driver nxt transistor mar 826 equivalent SMS BASED DC MOTOR SPEED CONTROLLER NQFP-32 AMIS-30521 smd 103 stepper motor driver stepper motor sla nqfp mcu microstepping
Text: . Secondly, when excessive voltage is sensed across the transistor , the transistor is switched-off. In , switches. The output slope is defined by the gate-drain capacitance of output transistor and the (limited , current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor . Depending on the


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PDF AMIS-30521 I2T100 M-20683-001 30521 step motor driver nxt transistor mar 826 equivalent SMS BASED DC MOTOR SPEED CONTROLLER NQFP-32 smd 103 stepper motor driver stepper motor sla nqfp mcu microstepping
2007 - nqfp

Abstract: AMIS-30522 NQFP-32 stepper motor sla step motor driver nxt 30522
Text: limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched off , output switches. The output slope is defined by the gate-drain capacitance of output transistor and the , ": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain-bulk diode of the transistor


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PDF AMIS-30522 M-20684-001 nqfp NQFP-32 stepper motor sla step motor driver nxt 30522
2007 - step motor driver nxt

Abstract: 30521 mcu microstepping nqfp m2068 mcu microstep stepper motor sla
Text: current in the driver is limited. Secondly, when excessive voltage is sensed across the transistor , the transistor is switched-off. In order to reduce the radiated/conducted emission, voltage slope control is , transistor and the (limited) current that drives the gate. There are two trimming bits for slope control , "active diodes": when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through


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PDF AMIS-30521 I2T100 M-20683-001 step motor driver nxt 30521 mcu microstepping nqfp m2068 mcu microstep stepper motor sla
2001 - 22 pf TEKELEC

Abstract: BLF647 transistor 2001 H1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , 2001 Mar 27 4 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , Mar 27 +Vdrain C20 Philips Semiconductors UHF power LDMOS transistor C7 R2 L15 3mm L9 L1 L11 , Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic


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PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 22 pf TEKELEC transistor 2001 H1
2008 - 3 phase MOTOR CONTROL ic

Abstract: AMIS-30521
Text: voltage is sensed across the transistor , the transistor is switched-off. In order to reduce the radiated , by the gate-drain capacitance of output transistor and the (limited) current that drives the gate , transistors are equipped with so-called "active diodes" : when a current is forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the


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PDF AMIS-30521 AMIS-30521 3 phase MOTOR CONTROL ic
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Text: . Fig.1-12 Simple equivalent circuit of a bipolar RF transmitting transistor . 1998 Mar 23 , current. 1998 Mar 23 4 Philips Semiconductors RF transmitting transistor and power amplifier , .1-7 1998 Mar 23 MGM005 Cross-section of a vertical DMOS transmitting transistor . The length of the , .1-9 1998 Mar 23 Interdigitated source and gate arrangement of a typical MOS transmitting transistor die , characteristics of MOS devices. 1998 Mar 23 7 Philips Semiconductors RF transmitting transistor and


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
1997 - transistor MAR 826

Abstract: 94R mosmic S594T S594TR
Text: 20 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 1 (8 , collector switching transistor (inside of PLL), insert 10 kW collector resistor. 2 (8) TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 S594T/S594TR Common Source S-Parameters VDS = 5 V; VG2S = 4 V S11 f , ­2.43 ­2.57 ­2.74 ­2.81 ­2.93 ­3.06 ­3.16 TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 S12 , 113.4 109.3 104.4 100.0 95.5 91.2 86.8 82.6 78.4 73.8 69.9 65.7 62.0 57.8 53.4 ­63.74


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PDF S594T/S594TR S594T 927the D-74025 26-Mar-97 transistor MAR 826 94R mosmic S594TR
1997 - BFQ65

Abstract: BFQ 540 application LINEAR/525/OS/LM01A/MAR 527 transistor
Text: BFQ65 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for , (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A2, 21- Mar -97 1 (7 , TELEFUNKEN Semiconductors Rev. A2, 21- Mar -97 BFQ65 Common Emitter S-Parameters S11 VCE/V IC/mA , 0.147 0.142 0.139 0.136 0.136 0.132 TELEFUNKEN Semiconductors Rev. A2, 21- Mar -97 ­27.4 , 98.3 84.7 77.9 72.1 64.5 57.1 52.8 142.0 108.4 94.9 82.6 76.4 71.1 63.9 56.8 52.7 137.7


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PDF BFQ65 D-74025 21-Mar-97 BFQ65 BFQ 540 application LINEAR/525/OS/LM01A/MAR 527 transistor
2004 - free transistor and ic equivalent data

Abstract: 12434 MARKING ZT SOT23 TRANSISTOR pbss4140t PBSS5140T
Text: function of collector current; typical values. 2004 Mar 16 5 Equivalent on-resistance as a , DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2001 Jul 13 2004 Mar 16 Philips Semiconductors Product specification 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T QUICK REFERENCE DATA FEATURES · , collector-emitter voltage ICM · Improved device reliability due to reduced heat generation. equivalent


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PDF PBSS4140T SCA76 R75/03/pp9 free transistor and ic equivalent data 12434 MARKING ZT SOT23 TRANSISTOR pbss4140t PBSS5140T
transistor MAR 543

Abstract: telefunken ha 880 ha 1452 smd transistor marking 327 sot 363 marking J9 TRANSISTOR SMD MARKING 2 HA CI 7404 transistor MAR 826 MAR 747 5304 smd 8 pin
Text: Semiconductors Rev. A2, 26- Mar -97 1(8) This Material Copyrighted By Its Respective Manufacturer s594t/s594tr , feasible. Using open collector switching transistor (inside of PLL), insert 10 kfì collector resistor. 2 (8) TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 This Material Copyrighted By Its Respective , -0.86 -28.7 950 -2.28 -63.8 4.53 82.6 -45.77 110.0 -0.93 -30.0 1000 -2.43 -66.6 4.29 78.4 ^5.10 114.9 , 146.5 -1.39 -40.1 TELEFUNKEN Semiconductors Rev. A2, 26- Mar -97 This Material Copyrighted By Its


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PDF s594t/s594tr S594T S594TR 26-Mar-97 transistor MAR 543 telefunken ha 880 ha 1452 smd transistor marking 327 sot 363 marking J9 TRANSISTOR SMD MARKING 2 HA CI 7404 transistor MAR 826 MAR 747 5304 smd 8 pin
CK100 transistor DIAGRAM

Abstract: CK100 transistor Temperature sensor using plc zener wafer on/smd transistor l42 DC-13 CK-100 EN50082-2 M-825 SH-72
Text: the ON/OFF of the test input signal, the sensor operation is normal. Model No. M-825 M- 826 M , . M-825 26 pieces 6.35mm M- 826 M-625 4.76mm SPECIFICATIONS Model No. M , consumption 200mA or less NPN open-collector transistor · Maximum sink current: 20mA · Applied voltage , ) Sensing output Utilization category Output operation 25 pieces M- 826 Wafer pitch Number , flat cable, 500mm long with clamp connector Extension up to total 50m is possible with an equivalent


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PDF SH-72 FD-L41/L42 M-825 M-826 M-625 HIF3BA-30D-2 CK100 transistor DIAGRAM CK100 transistor Temperature sensor using plc zener wafer on/smd transistor l42 DC-13 CK-100 EN50082-2 M-825 SH-72
1998 - transistor MAR 826

Abstract: Wideband hybrid coupled amplifier A Wideband hybrid coupled amplifier 470 - 860 MHz Philips 2222 capacitor philips NCO8101 Philips 2222 344 capacitors BLV57 philips ph 116 capacitors 111J
Text: REFERENCES 1998 Mar 23 2 Application Note NCO8101 Philips Semiconductors A Wideband hybrid , designed with two transistors BLV57 in class-A. The BLV57 is a balanced transistor (two identical chips) in , The schematic line-up of the complete amplifier is given in Fig.1. 1998 Mar 23 3 Philips , . 3.2 Bias circuit Each transistor has its own bias unit to obtain a stable DC-setting (see Fig , , input and load impedance of a half BLV57 (one chip) are given in Table 2. 1998 Mar 23 4


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PDF BLV57 NCO8101 SCA57 transistor MAR 826 Wideband hybrid coupled amplifier A Wideband hybrid coupled amplifier 470 - 860 MHz Philips 2222 capacitor philips NCO8101 Philips 2222 344 capacitors BLV57 philips ph 116 capacitors 111J
2009 - PBSS4320T

Abstract: PBSS5320T transistor marking zg
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA · Low , gain collector-emitter voltage IC · High collector current capability equivalent , DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. handbook


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PDF PBSS4320T R75/02/pp10 PBSS4320T PBSS5320T transistor marking zg
2001 - transistor s parameters noise

Abstract: BF 145 transistor
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 , point to the pcb S 1 Mar -07-2001 SIEGET 25 BFP 450 Electrical Characteristics at TA , - pF dB dBm 1G 2 1/2 ma = |S21 / S12 | (k-(k -1) ) 2 Mar -07-2001 SIEGET , Application Notes CD-ROM or see Internet: 3 Mar -07-2001 SIEGET 25 BFP 450 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor


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PDF VPS05605 OT-343 50Ohm -j100 Mar-07-2001 transistor s parameters noise BF 145 transistor
transistor equivalent table

Abstract: IC FP103 sot-26 pwm controller Transistor AND DIODE Equivalent list FP103 Device Name 23 330 LDO 3.3V RSX101M-30 MMBT589LT1 ccd camera module ta701
Text: components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , C1 * This specifications are subject to be changed without notice Mar . 12. 2009 / Rev. 0.1 1 , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper


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PDF 350mA) ADT7220 ADT7220 350mA 500kHz 300mA transistor equivalent table IC FP103 sot-26 pwm controller Transistor AND DIODE Equivalent list FP103 Device Name 23 330 LDO 3.3V RSX101M-30 MMBT589LT1 ccd camera module ta701
2004 - transistor marking zg

Abstract: PBSS4320T PBSS5320T
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES · Low , gain collector-emitter voltage IC · High collector current capability equivalent , DESCRIPTION handbook, halfpage NPN low VCEsat transistor in a SOT23 plastic package. PNP complement


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PDF PBSS4320T SCA76 R75/02/pp10 transistor marking zg PBSS4320T PBSS5320T
2009 - Not Available

Abstract: No abstract text available
Text: ‰¤ 0.25. 2004 Mar 18 3 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor , DISCRETE SEMICONDUCTORS DAT PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation , voltage IC • High collector current capability equivalent on-resistance 105 mÎ


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PDF PBSS4320T R75/02/pp10
transistor equivalent table

Abstract: sot-26 pwm controller SOT-26 301 PWM controller sot-26 Transistor Equivalent list RSX101M-30 MMBT589LT1 FP103 ADT7221 Transistor AND DIODE Equivalent list
Text: components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , C1 * This specifications are subject to be changed without notice Mar . 12. 2009 / Rev. 0.1 1 , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode. In this case, you make use the discrete components with proper


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PDF 350mA) ADT7221 ADT7221 350mA 500kHz 300mA transistor equivalent table sot-26 pwm controller SOT-26 301 PWM controller sot-26 Transistor Equivalent list RSX101M-30 MMBT589LT1 FP103 Transistor AND DIODE Equivalent list
1998 - Philips Application Note ECO6907

Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier HF power amplifier blf177 BLF278 mosfet HF amplifier
Text: `reversible'. 1998 Mar 23 10 Philips Semiconductors RF transmitting transistor and power amplifier , 1998 Mar 23 13 Philips Semiconductors RF transmitting transistor and power amplifier , .3-22 Compensation of an RF choke. 1998 Mar 23 16 Philips Semiconductors RF transmitting transistor and , Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power , 3p - 2q The transistor power gain in a class-A amplifier is about 3 to 4 dB higher than that of


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PDF
2009 - NQFP-32

Abstract: 30521 AMIS-30521 stepper motor sla A114 JESD22 T100 step motor driver nxt AMIS 521
Text: . . . 4 Equivalent Schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package , GND 1 Ground Description Supply Type Equivalent Schematic DI 2 SPI Data In , Junction-to-Exposed Pad 1S0P Board 2S2P Board Unit NQFP-32 0.95 60 30 K/W EQUIVALENT SCHEMATICS The following figure gives the equivalent schematics of the user relevant inputs and outputs. The , Figure 2. In- and Output Equivalent Diagrams http://onsemi.com 4 AMIS-30521, NCV70521 PACKAGE


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PDF AMIS-30521, NCV70521 AMIS-30521/D NQFP-32 30521 AMIS-30521 stepper motor sla A114 JESD22 T100 step motor driver nxt AMIS 521
2002 - TDA8842 s1

Abstract: ALP018TT BLV1819-30 TDA8842 S1 tda8842 s1 datasheet TDA8842 S1 TDA4859ps OH191 blv1819-4a blv1819 BAX12 equivalent
Text: 3 31- Mar -03 30-Jun-03 BAV70 Replacement type is nearest equivalent 14 BAW56/HP , is nearest equivalent 15 BAW56/HP High-speed double diode 934040690215 T S 3 31- Mar , 933012770113 T S 3 31- Mar -03 30-Jun-03 BAS29 Replacement type is nearest equivalent in , 933012770143 T S 3 31- Mar -03 30-Jun-03 BAS29 Replacement type is nearest equivalent in , S 3 31- Mar -03 30-Jun-03 BAS29 Replacement type is nearest equivalent in SMD plastic


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PDF SoY22187A3 31-Mar-03 30-Jun-03 vy22187b3 VY22254-4 VY22254-4 vy22402a2 TDA8842 s1 ALP018TT BLV1819-30 TDA8842 S1 tda8842 s1 datasheet TDA8842 S1 TDA4859ps OH191 blv1819-4a blv1819 BAX12 equivalent
2002 - PBSS5140V

Abstract: PBSS4140V
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Oct 19 2002 Mar 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA · 300 mW , -2 A RCEsat equivalent on-resistance <340 · Improved thermal behaviour due to flat leads , transistor in a SOT666 plastic package. NPN complement: PBSS4140V. handbook, halfpage 6 5 4 1


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PDF M3D744 PBSS5140V SCA74 613514/02/pp8 PBSS5140V PBSS4140V
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